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ELVP22100 Amphenol PCD CONN TERM BLK PLUG 22POS 3.81MM visit Digikey Buy

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Part : ELVP22100 Supplier : Amphenol Manufacturer : Avnet Stock : - Best Price : $6.6923 Price Each : $8.5973
Part : ELVP22100E Supplier : Amphenol Manufacturer : Avnet Stock : - Best Price : $7.2436 Price Each : $9.3364
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VP2210

Catalog Datasheet MFG & Type PDF Document Tags

VP2210

Abstract: VP2206N2 VP2206N2 VP2206N3 VP2206ND -100V RDS(ON) (max) 0.9 -4A VP2210N2 VP2210N3 VP2210ND MIL visual screening available Advanced DMOS Technology High Reliability Devices See , VP2206 VP2210 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order , . * Distance of 1.6 mm from case for 10 seconds. 9-45 9 VP2206/VP2210 Thermal Characteristics , Breakdown Voltage VP2206 VP2210 VGS(th) Gate Threshold Voltage V GS(th) Change in VGS(th
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To-92 60w 2a VP2206/VP2210

VP2210

Abstract: VP2206N3 VP2206ND -100V 0.9Q -4A VP2210N2 VP2210N3 VP2210ND If BVoss / BV bqs , VP2206 VP2210 Supertex inc. P-Channel Enhancement-Mode Vertical DMOS FETs Ordering , VP2206/VP2210 Thermal Characteristics Package l0 (continuous)* l0 (pulsed) Power Dissipation , BVdss Parameter Min Drain-to-Source Breakdown Voltage VP2206 VP2210 Typ Max Unit , VP2206/VP2210 Typical Performance Curves lD (amperes) Output Characteristics © E Q. 0
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OCR Scan
7732R5 GGQ43

TN0604N3

Abstract: HV5808 VP2210 N2 VP2206N2 - obs VP2210 N3 VP2206N3 - obs VQ1000 N6
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VP0109N3 VN3205N6 TN0604N3 HV5808 TP0606N3 HV5708 HV50530 VQ1001 replacement 2N6659 VN2210N2 TN0104N3 2N7007 TN5325N3 AN0332

VP2210

Abstract: VP2204N3 G ì Super te x inc. P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices VP 22A If b v dss ·' b v dgs Order Num ber / Package TO-92 VP2204N3 VP2206N3 VP2210N3 DICEt VP2204ND VP2206ND VP2210ND ^DS(O N) (max) 0.9Q 0.9Q 0.9Î2 j 40V 60V -100V -4A -4A -4A M IL v is u a l s c re e n in g a v a ila b le High Reliability Devices See pages 5-4 , Drain-to-Source Breakdown Voltage VP2204 VP2206 VP2210 ^G S m A V GS(th> 'gss Id s s unless otherwise
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OCR Scan

VP2210ND

Abstract: VP2210N2 VP2206 = j 1 1L j= L r «HHHMr | r ' : L J - ' 7r ( C, ft vp22io P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ ^DS(ON) BVdgs -60V -100V (max) 0.9Q 0.9Q If Order Number / Package TO-39 VP2206N2 VP2210N2 TO-92 VP2206N3 VP2210N3 DICEt VP2206ND VP2210ND -4A -4A t MIL visual screening available High Reliability Devices See pages 5-4 , Gate Voltage Drain Current VP2206 VP2210 Conditions VG S = 0V ; lD = -10mA ^G S -60 -100 -1.0
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OCR Scan
VP2206/V P2210
Abstract: VP2206N3 VP2206ND -100V 0.9Q -4A VP2210N2 VP2210N3 VP2210ND * MIL visual screening , -60 Conditions -40 VP2210 BVdss -100 V o v - lD = -10mA Gate Threshold Voltage -
OCR Scan
VP22A VP2204N2

vp22a

Abstract: VP2210N2 inc . TO-92 VP2204N3 VP2206N3 VP2210N3 DICE* VP2204ND VP2206ND VP2210ND V P 2 2A P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices BVdss/ BV dgs -40V -60V -100V R d S{ON) If -4A -4A -4A Order Num ber / Package TO-39 VP2204N2 VP2206N2 VP2210N2 (max) 0.9£i 0.9Q 0.9Q * M IL Visual screening availab le High Reliability Devices See , 5 °c Symbol BV dss Parameter Drain-to-Source Breakdown Voltage VP2204 VP2206 VP2210 V GS(th) A ^G
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OCR Scan

pj 89 diode

Abstract: HV7708PG VP1106 VP1110 VP1204 VP1206 VP1210 VP1304 VP1306 VP1310 VP2110 VP2206 VP2210 VP3203 b v dss m in (V
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OCR Scan
TN2540 pj 89 diode HV7708PG HV7808 pj 44 diode VQ10003 pj 56 diode TN2101K1 TN2106K1 TN2124K1 TP2106K1 VN2110K1 VP2110K1

pj 89 diode

Abstract: LR645 equivalent '¢ VP2206 -60 0.9 -4.0 325 â'¢ VP2210 -100 0.9 -4.0 325 â'¢ â'¢ VP3203 -30 0.6 â'" 220
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LR645 equivalent FED-STD-209 pj 54 diode TN0110 equivalent CCW SOT23 pj 57 diode MIL-STD-883

SEMICON INDEXES

Abstract: Ericsson SPO 1410 VP0808B VP1008B VP1008L VP1304N2 VP1304N3 VP1306N2 VP1306N3 VP1310N2 VP1310N3 VP2110N3 VP2210N2 VP2210N3 VP5225K4-G VQ1000N6 VQ1000N7 VQ1001P VQ1004J VQ1004P VQ2001P VQ2006P VQ3001N6 VQ3001N7
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SEMICON INDEXES Ericsson SPO 1410 tr/NEC Tokin 0d 108 irfp240f LT5202 diode appian adi/2 VV276

HV50530PG

Abstract: VN2460N8-G ZVP3306A ZVP3306B VP0120N3 VP2210N2 TP0620N5 VP2106N3 VP0109N2 ZVN1309A ZVN1309B ZVN1310A
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HV50530PG VN2460N8-G hv9910p-g HV5808PJ HV801 HV-801 AN0332CG AP0332CG BSS123 DN2535N2 DN2540N2 DN2620N3

mosfet cross reference

Abstract: pj 929 diode -60 Conditions -40 VP2210 BVdss -100 V o v - lD = -10mA Gate Threshold Voltage
Supertex
Original
mosfet cross reference pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode T0-92 TN2101 TN2501 TN0602 TN0702 TN0102

p1240

Abstract: STANAG-3910 VP1106 VP1110 VP1204 VP1206 VP1210 VP1304 VP1306 VP1310 VP2110 VP2206 VP2210 VP3203 b v dss m in (V
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p1240 STANAG-3910 BS9000 BS9720 PSELS00132 P1200 IL-T-21038 P1264