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VN2210ND Datasheet

Part Manufacturer Description PDF Type
VN2210ND Supertex N-Channel Enhancement-Mode Vertical DMOS FETs Original
VN2210ND Supertex N-Channel Enhancement-Mode Vertical DMOS FETs Scan
VN2210ND-G Supertex Transistor Mosfet N-CH 100V DIE Original

VN2210ND

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: ^ Supertex Ordering Information B V dss / b v dgs R DS(ON) in c . VN22A N-Channel Enhancement-Mode Vertical DMOS FETs Order Number / Package TO-92 VN2204N3 VN2206N3 VN2210N3 Dice* VN2204ND VN2206ND VN2210ND (max) 0.35Q 0.350 0.35H 40V 60V 100 V t MIL visual screening available If 8A 8A 8A Features Z P Z Free from secondary breakdown Low power drive requirement Ease of paralleling Low C|SS and fast switching speeds Excellent thermal stability Integral Source-Drain diode High -
OCR Scan
VN2204 VN2206 VN2210
Abstract: Supertex inc. VN2210 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ ^DS(ON) ^D(ON) b v dgs (max) (min) TO-39 TO-92 Diet 100V 0.35Ã2 8A VN2210N2 VN2210N3 VN2210ND a t M IL visua l screening availa ble Features Advanced DMOS Technology â¡ Free from secondary breakdown â¡ Low power drive requirement â¡ Ease of paralleling â¡ Low C|SS and fast switching speeds â -
OCR Scan

VN2206N2

Abstract: VN2206 VN2210 Supertexinc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information II Order Number / Package BV0SS/ BV dgs (max) TO-39 TO-92 Dicet 60V 0.35a 8A VN2206N2 VN2206N3 VN2206ND 100V t ^ D S (O N ) 0.35Q 8A VN2210N2 VN2210N3 VN2210ND M IL visual screening ava ila b le Features Advanced DMOS Technology G Free from secondary breakdown These enhancement-mode (normally-off) transistors utilize a vertical
-
OCR Scan
VN2206A/N2210 DG0431S VN2206/VN2210

VN2206

Abstract: 035Q Supertex inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information ^DS(O N) 'O(ON) VN2206 VN2210 Order Num ber / Package TO-39 VN2206N2 VN2210N2 TO-92 VN2206N3 VN2210N3 D iet VN2206ND VN2210ND bC s (m ax) 0.35Î2 0.35Q (min) 8A 8A 60V 100 V 1 M IL visual screening available Features H Free from secondary breakdown Low power drive requirement Ease of paralleling Low C|SS and fast switching speeds Excellent thermal stability Integral Source-Drain diode High input impedance and
-
OCR Scan
035Q
Abstract: J T _ /j _ VN2206 VN2210 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ R d S(ON) I d (ON) Order Number / Package TO-39 VN2206N2 VN2210N2 TO-92 VN2206N3 VN2210N3 Dicet VN2206ND VN2210ND BVdgs 60V 100V t M IL visual screening available (max) 0.35Q 0.35Q (min) 8A 8A Features Free from secondary breakdown Low power drive requirement Ease of paralleling Low C|SS and fast switching speeds Excellent thermal stability Integral Source-Drain diode High -
OCR Scan

VN2210

Abstract: VN2206N2 VN2206 VN2210 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS ID(ON) (min) TO-39 TO-92 Die 60V 0.35 8A VN2206N2 VN2206N3 VN2206ND 100V RDS(ON) (max) 0.35 8A VN2210N2 VN2210N3 VN2210ND MIL visual screening available Features Advanced DMOS Technology s Free from secondary breakdown These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex
Supertex
Original

VN22A

Abstract: O i S u p e rte x inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVdss/ BVdgs 60V 100 V * MIL visual screening available ^DS(O N) VN22A Order Number / Package TO-92 VN2206N3 VN2210N3 JÎ (max) 0.3512 0 .3 5 0 Dicet VN2206ND VN2210ND 8A 8A Features I Free from secondary breakdown Low power drive requirement Ease of paralleling Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical D MOS stru ctu re and S u p
-
OCR Scan
Abstract: SUPERTEX INC 35E ® 1 ) â  ÃTTa STS QDQS5c iO 5 M S TX N-Channel Enhancement-Mode Vertical DMOS FETs ~T-35-25 Ordering Information BVoss / Order Number / Package f*DS(ON) ' d (ON) qqs (max) (min) TO-92 Dice* 40V 0.35Q 8A VN2204N3 VN2204ND 60V 0.35Ãà 8A VN2206N3 VN2206ND 100V 0.35Q 8A VN2210N3 VN2210ND BV MIL visual screening available Features Advanced DMOS Technology â¡ Free from -
OCR Scan

VN2204N3

Abstract: VN2204ND SUPERTEX INC 3SE D â  0773213 0002210 2 «STX N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BV0SS/ BVdqs f DS(ON) (max) 'D(ON) (min) Order Number / Package TO-92 Dice* 40V 0.35Q 8A VN2204N3 VN2204ND 60 V 0.35Ãà 8A VN2206N3 VN2206ND 100 V 0.35Q 8A VN2210N3 VN2210ND t MIL visual screening available Features Q Free from secondary breakdown â¡ Low power drive requirement â¡ Ease of paralleling â¡ Low C|SS and fast switching speeds â¡ Excellent thermal stability â
-
OCR Scan

VN2210N3

Abstract: VN2210ND VN2210 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS ID(ON) (min) TO-39 TO-92 Die 100V RDS(ON) (max) 0.35 8A VN2210N2 VN2210N3 VN2210ND MIL visual screening available 7 Features Advanced DMOS Technology s Free from secondary breakdown These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This
Supertex
Original

mosfet cross reference

Abstract: pj 929 diode SD3300BD SD3300CHP TP0610N2 VP0540N3 VP0540ND VN2210N3 VN2210ND VN606M VN0610LL VN0808L , SP0610L TN0610N2 TN0604N3 VN2210ND 2N7000 VP0106N3 VN10KM VN10KMA VN10KN3 VN10LE VN10LM
Supertex
Original
mosfet cross reference pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode T0-92 TN2101 TN2501 TN0602 TN0702 TN0102

SW7 357

Abstract: ausi die attach VF06 VF06 VF21 VN2106ND VN2110ND VN2206ND VN2210ND VN2222ND VF21 VF21 VF22 VF22 VF22
Supertex
Original
HV208 SW7 357 ausi die attach HV803 CSI 2702 VP0109ND VN0545ND VF01/VF06/VF21/VF25 VF22/LND1/LP07 VF05/VF13/VF26/TN07 VF32/LNE1/LP08 HV15/HV16/HV18 HV202