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VISHAY TSSOP-6

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: ?70181. www.vishay.com 6 Document Number: 70181 S-81056-Rev. D, 12-May-08 Package Information Vishay Siliconix , Si6543DQ Vishay Siliconix Dual N- and P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT , TSSOP-8 D1 S1 2 S1 7 S2 S2 5 4 Si6543DQ G2 D2 6 3 G1 8 1 , Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test , N-Ch 6 18 P-Ch 9 18 N-Ch 18 27 P-Ch 14 27 N-Ch 6 15 P-Ch Vishay Intertechnology
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6543DQ 6543DQ-T1 6543DQ-T1-GE3 2011/65/EU 2002/95/EC JS709A
Abstract: -May-08 Si6543DQ Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 20 VGS = 10 thru 6 V 5V 16 I D - Drain , Si6543DQ Vishay Siliconix Dual N- and P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V , G2 G1 G2 Si6543DQ 7 6 5 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted , -May-08 www.vishay.com 1 Si6543DQ Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter , , RG = 6 P-Channel VDD = - 10 V, RL = 10 ID - 1 A, VGEN = - 10 V, RG = 6 IF = 1.25 A, dI/dt = 100 A Vishay Siliconix
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S-81056-R
Abstract: ?70720. www.vishay.com 6 Document Number: 70720 S-81056-Rev. C, 12-May-08 Package Information Vishay Siliconix , Si6562DQ Vishay Siliconix N- and P-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY , S2 S1 3 6 G1 4 5 G1 S2 G2 Top View S1 D2 N-Channel MOSFET , -May-08 www.vishay.com 1 Si6562DQ Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter , VDD = 10 V, RL = 10 Ω ID ≠1 A, VGEN = 10 V, RG = 6 Ω P-Channel VDD = - 10 V, RL = 10 Ω ID â Vishay Siliconix
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6562DQ 6562DQ-T1 6562DQ-T1-GE3
Abstract: Si6562DQ Vishay Siliconix N- and P-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V , Halogen-free) S1 N-Channel MOSFET D2 P-Channel MOSFET 8 D2 S2 S2 G2 G1 G2 Si6562DQ 7 6 5 ABSOLUTE , may apply. Document Number: 70720 S-81056-Rev. C, 12-May-08 www.vishay.com 1 Si6562DQ Vishay , , ID = 4.5 A P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch N-Channel VDD = 10 V, RL = 10 ID 1 A, VGEN = 10 V, RG = 6 P-Channel VDD = - 10 V, RL = 10 ID - 1 A, VGEN = - 10 V, RG = 6 IF = 1.25 A, dI/dt = 100 A/µs IF = - 1.25 Vishay Siliconix
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tssop 38 footprint

Abstract: Si6969DQ Vishay Siliconix Dual P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) - 12 , Halogen-free) D1 D2 8 D2 7 S2 6 S2 5 G2 G1 G2 Si6969DQ ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless , Document Number: 70828 S-81221-Rev. B, 02-Jun-08 www.vishay.com 1 Si6969DQ Vishay Siliconix , ) tr td(off) tf trr IF = - 1.25 A, dI/dt = 100 A/µs VDD = - 6 V, RL = 6 ID - 1 A, VGEN = - 4.5 V, RG = 6 VDS = - 6 V, VGS = - 4.5 V, ID = - 4.6 A 21 4.5 3.5 25 35 80 40 50 50 60 150 80 100 ns 40 nC
Vishay Siliconix
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tssop 38 footprint 6969DQ 6969DQ-T1-GE3 S-81221-R
Abstract: Si6467BDQ Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V , * Source Pins 2, 3, 6 and 7 must be tied common. 6 S 5 D Top View D Ordering Information , -Mar-08 www.vishay.com 1 Si6467BDQ Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter , td(on) VDS = - 6 V, VGS = - 4.5 V, ID = - 8.0 A 45 Fall Time 235 140 IF = - 1.5 A , 70 85 VDD = - 6 V, RL = 6 Ω ID ≠- 1 A, VGEN = - 4.5 V, Rg = 6 Ω td(off) Turn-Off Vishay Siliconix
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6467BDQ 6467BDQ-T1 6467BDQ-T1-GE3
Abstract: Si6433BDQ Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) - 12 RDS(on , and Halogen-free) 8 D 7 S 6 S 5 D D P-Channel MOSFET G * Source Pins 2, 3, 6 and 7 must be tied common , Si6433BDQ Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Gate , - 6 V, RL = 6 ID - 1 A, VGEN = - 4.5 V, Rg = 6 f = 1 MHz VDS = - 6 V, VGS = - 4.5 V, ID = - 4.8 A , Number: 72511 S-80682-Rev. C, 31-Mar-08 Si6433BDQ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C Vishay Siliconix
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6433BDQ 6433BDQ-T1-GE3 S-80682-R

AN1001 equivalent

Abstract: Si6981DQ Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS , : Si6981DQ-T1-GE3 (Lead (Pb)-free and Halogen-free) 8 D2 7 S2 6 S2 5 G2 G1 G2 D1 P-Channel MOSFET D2 , -Jun-08 www.vishay.com 1 Si6981DQ Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter , = 10 ID - 1 A, VGEN = - 4.5 V, RG = 6 VDS = - 10 V, VGS = - 4.5 V, ID = - 4.8 A 15 2.4 3.8 35 55 , 12 6 1.5 V 6 0 0 1 2 3 4 5 0 0.0 0.5 1.0 1.5 2.0 2.5 VDS -
Vishay Siliconix
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AN1001 equivalent 6981DQ 6981DQ-T1-GE3
Abstract: Si6993DQ Vishay Siliconix Dual P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 30 RDS , Halogen-free) 8 D2 7 S2 6 S2 5 G2 G1 G2 D1 P-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM , Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Gate Threshold , , RL = 15 ID - 1 A, VGEN = - 10 V, RG = 6 f = 1.0 MHz VDS = - 15 V, VGS = - 4.5 V, ID = - 4.7 A 13 3 , 25 °C I D - Drain Current (A) 18 12 12 6 3V 0 0 1 2 3 4 5 6 0 0.0 0.5 1.0 Vishay Siliconix
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6993DQ 6993DQ-T1-GE3
Abstract: Si6913DQ Vishay Siliconix Dual P-Channel 12 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V , Switch TSSOP-8 D1 2 S1 3 G1 S2 8 D2 7 S2 1 S1 S1 4 6 S2 5 G2 G1 , DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si6913DQ Vishay , Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = - 6 V, VGS = - 4.5 V, ID = - 5.8 A f = 1 MHz , 200 120 65 tf 120 80 td(off) Turn-Off Delay Time 70 80 VDD = - 6 V, RL = 6 Vishay Siliconix
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6913DQ 6913DQ-T1-E3 6913DQ-T1-GE3
Abstract: Si6404DQ Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on , (Lead (Pb)-free and Halogen-free) 8 D 7 S 6 S 5 D S* N-Channel MOSFET G * Source Pins 2, 3, 6 and 7 , -Mar-08 www.vishay.com 1 Si6404DQ Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter , A/µs VDD = 15 V, RL = 15 ID 1 A, VGEN = 4.5 V, RG = 6 VDS = 15 V, VGS = 4.5 V, ID = 11 A 32 8.1 , °C 6 25 °C - 55 °C 1.5 2.0 2.5 6 0 0 2 4 6 8 10 0 0.0 0.5 1.0 VDS - Drain-to-Source Vishay Siliconix
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6404DQ 6404DQ-T1-GE3
Abstract: Si6467BDQ Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on , Halogen-free) P-Channel MOSFET 8 D 7 S 6 S 5 D G * Source Pins 2, 3, 6 and 7 must be tied common. Si6467BDQ , RthJA RthJF Typical 65 100 43 Maximum 83 120 52 °C/W Unit Si6467BDQ Vishay Siliconix , ) tr td(off) tf trr IF = - 1.5 A, di/dt = 100 A/µs VDD = - 6 V, RL = 6 ID - 1 A, VGEN = - 4.5 V, Rg = 6 VDS = - 6 V, VGS = - 4.5 V, ID = - 8.0 A 46 5 15.5 45 85 220 155 140 70 130 400 235 210 ns 70 nC Vishay Siliconix
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70720

Abstract: Si6562DQ Vishay Siliconix N- and P-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V , Halogen-free) S1 N-Channel MOSFET D2 P-Channel MOSFET 8 D2 S2 S2 G2 G1 G2 Si6562DQ 7 6 5 ABSOLUTE , may apply. Document Number: 70720 S-81056-Rev. C, 12-May-08 www.vishay.com 1 Si6562DQ Vishay , , ID = 4.5 A P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch N-Channel VDD = 10 V, RL = 10 ID 1 A, VGEN = 10 V, RG = 6 P-Channel VDD = - 10 V, RL = 10 ID - 1 A, VGEN = - 10 V, RG = 6 IF = 1.25 A, dI/dt = 100 A/µs IF = - 1.25
Vishay Siliconix
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70720

SI6925AD

Abstract: pc based electronic notice board Si6925ADQ Vishay Siliconix Dual N-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) 20 RDS , Information: Si6925ADQ-T1-GE3 (Lead (Pb)-free and Halogen-free) 8 D2 7 S2 6 S2 5 G2 S1 N-Channel MOSFET S2 , -May-08 www.vishay.com 1 Si6925ADQ Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter , A/µs VDD = 6 V, RL = 6 ID 1 A, VGEN = 4.5 V, Rg = 6 VDS = 6 V, VGS = 4.5 V, ID = 3.9 A 4.0 0.9 1.0 1.9 40 50 20 10 20 60 75 30 20 40 ns 6 nC b b Symbol VGS(th) IGSS IDSS ID(on) RDS(on) gfs VSD
Vishay Siliconix
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SI6925AD pc based electronic notice board 6925ADQ 6925ADQ-T1-GE3
Abstract: Si6465DQ Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V , COMPLIANT S* TSSOP-8 G D S 2 S 7 S S 5 4 Si6465DQ * Source Pins 2, 3, 6 and 7 must be tied common D 6 3 G 8 1 D Top View D P-Channel MOSFET , Si6465DQ Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test , V - 0.65 - 1.1 50 80 VDS = - 6 V, VGS = - 4.5 V, ID = - 8.8 A 10 Ω S V Vishay Siliconix
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6465DQ 6465DQ-T1-GE3
Abstract: Si6467BDQ Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V , * Source Pins 2, 3, 6 and 7 must be tied common. 6 S 5 D Top View D Ordering Information , -Mar-08 www.vishay.com 1 Si6467BDQ Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter , td(on) VDS = - 6 V, VGS = - 4.5 V, ID = - 8.0 A 15.5 45 Fall Time 220 400 155 , /µs td(off) Turn-Off Delay Time 70 85 VDD = - 6 V, RL = 6 Ω ID ≠- 1 A, VGEN = - Vishay Siliconix
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Abstract: Si6435ADQ Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V , D S 2 7 S S 3 6 S G 4 5 * Source Pins 2, 3, 6 and 7 must be , Si6435ADQ Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test , - 15 V, RL = 15 Ω ID ≠- 1 A, VGEN = - 10 V, RG = 6 Ω tr Rise Time nC 80 ns , 5 V 24 I D - Drain Current (A) I D - Drain Current (A) 24 4V 18 12 6 2V 18 Vishay Siliconix
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6435ADQ 6435ADQ-T1-GE3
Abstract: Si6933DQ Vishay Siliconix Dual P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 30 RDS , Information: Si6933DQ-T1-GE3 (Lead (Pb)-free and Halogen-free) 8 D2 S2 S2 G2 G1 G2 Si6933DQ 7 6 5 , -May-08 www.vishay.com 1 Si6933DQ Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter , = 15 ID - 1 A, VGEN = - 10 V, RG = 6 VDS = - 15 V, VGS = - 10 V, ID = - 3.5 A 17 4.4 3.1 13 10 33 , Number: 70640 S-81056-Rev. D, 12-May-08 Si6933DQ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C Vishay Siliconix
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6933DQ 6933DQ-T1-GE3

MOSFET TSSOP-8 dual n-channel

Abstract: Si6928DQ Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS , N-Channel MOSFET 8 D2 S2 S2 G2 G1 G2 Si6928DQ 7 6 5 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless , . Document Number: 70663 S-81056-Rev. D, 12-May-08 www.vishay.com 1 Si6928DQ Vishay Siliconix , Qgd td(on) tr td(off) tf trr IF = 1.25 A, dI/dt = 100 A/µs VDD = 15 V, RL = 6 ID 1 A, VGEN = 10 V, RG = 6 VDS = 15 V, VGS = 10 V, ID = 4.0 A VDS = 15 V, VGS = 5 V, ID = 4.0 A 9 17.5 4.0 2.5 12 9 25
Vishay Siliconix
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MOSFET TSSOP-8 dual n-channel 6928DQ 6928DQ-T1 6928DQ-T1-GE3
Abstract: ?72215. www.vishay.com 6 Document Number: 72215 S-81056-Rev. B, 12-May-08 Package Information Vishay Siliconix , Si6924AEDQ Vishay Siliconix N-Channel 2.5-V (G-S) Battery Switch, ESD Protection PRODUCT , : 72215 S-81056-Rev. B, 12-May-08 www.vishay.com 1 Si6924AEDQ Vishay Siliconix FUNCTIONAL BLOCK , : Si6924AEDQ-T1-GE3 (Lead (Pb)-free and Halogen-free) 8 D 7 S2 6 S2 5 G2 3.3 k G2 3.3 k Si6924AEDQ S1 , : 72215 S-81056-Rev. B, 12-May-08 Si6924AEDQ Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless Vishay Siliconix
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6924AEDQ
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