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CSD17501Q5A Texas Instruments 30V, N-Channel NexFET™ Power MOSFET with 20 Volt Vgs 8-VSONP -55 to 150 visit Texas Instruments
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VGS-10V

Catalog Datasheet MFG & Type PDF Document Tags

5a6 zener diode

Abstract: 5A6 smd sot23 =10.5 mâ"¦@ ID=-12.6A, VGS=-10V Package Q-Level SMD SO-8 page 4 Subscriber Linecard , Features Package RDSon=41mOhm@ ID=6.5A, VGS=10V SMD SO-8 N-Channel 60-V (D-S) MOSFET Si7370DP Dual N-Channel 60-V (D-S) 175ºC MOSFET RDSon=11mOhm@ ID=15.8A, VGS=10V Q-Level SMD PowerPAK® SO-8 Si7430DP NEW N-Channel 150-V (D-S) WFET RDSon=45mOhm@ ID=26A, VGS=10V SMD PowerPAK® SO-8 Si7866ADP NEW N-Channel 20-V (D-S) MOSFET RDSon=2.4mOhm@ ID=40A, VGS=10V
Vishay Intertechnology
Original
5a6 zener diode 5A6 smd sot23 diode zener 6.2v 1w dual mosfet dip 10v ZENER DIODE MMBZ5240B-V IL207AT 4000V SFH615 5300V SFH6916

fet to92

Abstract: 2SK1828 © @V_GS=4V USM Y 3 Small-signal MOS FET ±20 3.3Ω @V_GS=10V 4.5Ω @V_GS=10V USM Y 3 Small-signal , FET 20Ω @V_GS=4V 50Ω @V_GS=4V S-MINI Y 3 Small-signal MOS FET 0.6Ω @V_GS=10V 1Ω @V_GS=10V , 1.3Ω @V_GS=-10V 2Ω @V_GS=-10V S-MINI Y 3 Small-signal MOS FET 20Ω @V_GS=4V 50Ω @V_GS=4V MINI N 3 Small-signal MOS FET 0.6Ω @V_GS=10V 1Ω @V_GS=10V MINI N 3 Small-signal MOS FET 20Ω @V_GS=-4V 50Ω @V_GS=-4V MINI N 3 Small-signal MOS FET 1.3Ω @V_GS=-10V 2Ω @V_GS=-10V MINI N 3
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SSM3K03TE SSM3K16TE SSM3K15TE SSM3J16TE SSM3J15TE SSM3K03FE fet to92 2SK1828 SSM3K15FU Pch MOS FET SSM3J13T SSM3J16FU

4501ss

Abstract: rd15 Coss - 150 - pF Crss - 95 - Turn-on Delay Time2 VDS=15V, VGS=10V, ID=1A, RG=3.3, RD=15 td(on) - 6 - Rise Time VDS=15V, VGS=10V, ID=1A, RG=3.3, RD=15 tr - 5.2 , Characteristics Gate-Source Threshold Voltage VDS=VGS, ID=250A Drain-Source On-Resistance VGS=10V,ID=7A VGS , =0V, VDS=20V, f=1.0MHz - Switching Characteristics Turn-off Delay Time VDS=15V, VGS=10V, ID=1A, RG=3.3, RD=15 Fall Time VDS=15V, VGS=10V, ID=1A, RG=3.3, RD=15 Total Gate Charge2 VDS=24V,VGS
Weitron
Original
WTK4501 4501ss rd15 4501s RD 15 4501SS
Abstract: FEATURES ·N-Channel : VDSS=30V, ID=7A. : RDS(ON)=23.5m(Max.) @ VGS=10V : RDS(ON)=39m(Max.) @ VGS=4.5V ·P-Channel : VDSS=-30V, ID=-5A. : RDS(ON)=45.5m(Max.) @ VGS=-10V : RDS(ON)=80m(Max.) @ VGS=-4.5V ·Super High , =24V VGS=0V, VDS=-24V VGS=±20V, VDS=0V VDS=VGS, ID=250 A VDS=VGS, ID=-250 A VGS=10V, ID=7A Drain-Source ON Resistance RDS(ON)* VGS=-10V, ID=-5A VGS=4.5V, ID=6A VGS=-4.5V, ID=-4A ON State Drain Current ID(ON)* VGS=4.5V, VDS=5V VGS=-10V, VDS=-5V VDS=5V, ID=6.6A VDS=-5V, ID=-5A IS=1.7A, VGS=0V IS=-1.7A, VGS=0V N-Ch P-Ch KEC
Original
KMB7D0NP30QA
Abstract: ‰¹ ・ Vds=30V æ'§ã''å'™ããå¤§é›»æµ MOSFET ですã'' ・ Id=6.9A(Vgs=10V) Id=-6A(Vgs=-10V) ・ Rds(on) < 28mΩ(Vgs=10V) Rds(on) < 35mΩ(Vgs=-10V) Vds=-30V ・ Rds(on) < 42mΩ(Vgs , ã'ªãƒ³ç¶æ'ドレã'¤ãƒ³é›»æµ Id(on) Vgs=4.5V, Vds=5V 20 ドレã'¤ãƒ³ - ã'½ãƒ¼ã'¹ã'ªãƒ³ç¶æ'æµæ— Rds(on) Vgs=10V , Vgs=10V, Vds=15V, Id=6.9A 13.84 16.60 nC 6.74 8.10 nC 1.82 nC Qgd td(on) 3.20 4.6 7.0 nC ns tr Vgs=10V, Vds=15V td(off) RL=2.2Ω, Rgen=3Ω tf 4.1 20.6 5.2 6.0 30.0 8.0 ELM Technology
Original
ELM14606AA-N AO4606
Abstract: ‰¹ ・ Vds=30V Vds=-30V æ'§ã''å'™ããå¤§é›»æµ MOSFET ですã'' ・ Id=6.9A(Vgs=10V) ・ Rds(on) < 28mΩ(Vgs=10V) Id=-5A(Vgs=-10V) Rds(on) < 52mΩ(Vgs=-10V) ・ Rds(on) < 42mΩ(Vgs , =5V 20 ドレã'¤ãƒ³ - ã'½ãƒ¼ã'¹ã'ªãƒ³ç¶æ'æµæ— Rds(on) Vgs=10V, Id=6.9A Gfs Vsd , å¯"ç"ãƒ'ã'¤ã'ªãƒ¼ãƒ‰é'回復電è·é‡ Qg Qg Qgs Vgs=10V, Vds=15V, Id=6.9A 13.84 17.00 nC 6.74 8.10 nC 1.82 nC Qgd td(on) 3.20 4.6 nC ns tr Vgs=10V, Vds=15V td(off) RL=2.2Ω, Rgen=3Ω tf 4.1 ELM Technology
Original
ELM14604AA-N AO4604

复合

Abstract: ELM14604AA =-30V 同时åè—æ‰ N æ²é"å'Œ P æ²é"çš"å¤åäº§å"ã'' ·Id=6.9A(Vgs=10V) ·Id=-5A(Vgs=-10V) ·Rds(on) < 28mΩ(Vgs=10V) ·Rds(on) < 52mΩ(Vgs=-10V) ·Rds(on) < 42mΩ(Vgs=4.5V) ·Rds(on) < 87mΩ(Vgs , V 3 Is Ciss Coss μA 100 Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=4.5V, Vds=5V Vgs=10V , =1MHz 77 3.0 3.6 pF Ω 13.84 6.74 17.00 8.10 nC nC Vgs=10V, Vds=15V, Id=6.9A æ æ , —´ å³é—­ä¸'é™æ—¶é—´ tr Vgs=10V, Vds=15V td(off) RL=2.2Ω, Rgen=3Ω tf 1.82 3.20 4.6 nC nC ns
ELM Technology
Original
ELM14604AA

P2503ND5G

Abstract: '¢ â'¢ P-channel Vds=30V Id=8A Rds(on) < 25mΩ(Vgs=10V) Rds(on) < 37mΩ(Vgs=4.5V) Vds=-30V Id=-6A Rds(on) < 45mΩ(Vgs=-10V) Rds(on) < 80mΩ(Vgs=-4.5V) â Maximum Absolute Ratings , (on) Vgs=10V, Vds=5V Vgs=10V, Id=8A Rds(on) Vgs=4.5V, Id=7A Forward transconductance Diode , Crss 65 pF Total gate charge Gate-source charge Gate-drain charge Qg Qgs Qgd Vgs=10V, Vds=15V, Id=8A 16.0 2.5 2.1 nC nC nC 2 2 2 td(on) tr Vgs=10V, Vds=10V, Idâ‰1A td
ELM Technology
Original
P2503ND5G ELM35602KA-S
Abstract: ) < 58mΩ(Vgs=10V) Rds(on) < 90mΩ(Vgs=-10V) ですã'' Vds=-60V ・ Rds(on) < 85mΩ(Vgs=4.5V) Rds , ƒ» ã'¹ãƒ¬ãƒƒã'·ãƒ¥ãƒ›ãƒ¼ãƒ«ãƒ‰é›»å§ Vgs(th) Vds=Vgs, Id=250μA 1.0 ã'ªãƒ³ç¶æ'ドレã'¤ãƒ³é›»æµ Id(on) Vgs=10V, Vds=5V Vgs=10V, Id=4.5A Rds(on) Vgs=4.5V, Id=4A Gfs Vds=10V, Id=4.5A Vsd If=Is=1.3A, Vgs=0V 20 , Vgs=10V, Vds=30V Id=4.5A td(on) tr Vgs=10V, Vds=30V td(off) Id=1A, Rgen=6Ω mΩ 1 1 , ã'ªãƒ³ç¶æ'ドレã'¤ãƒ³é›»æµ Id(on) Vgs=-10V, Vds=-5V Vgs=-10V, Id=-3.5A Rds(on) Vgs=-4.5V, Id=-3A Gfs Vds=-5V, Id ELM Technology
Original
ELM34608AA-N ELM34608AA P5806NVG

diode 98A

Abstract: Vds=30V Id=8.5A(Vgs=10V) Rds(on) < 17mΩ(Vgs=10V) Rds(on) < 27mΩ(Vgs=4.5V) Q2 â'¢ Vds=30V â'¢ Id=9.8A(Vgs=10V) â'¢ Rds(on) < 13mΩ(Vgs=10V) â'¢ Rds(on) < 15mΩ(Vgs=4.5V) â Maximum absolute , drain-source on-resistance Tj=55°C Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=10V, Vds=5V Rds(on , ) Gate-source charge Qg Qg Qgs Ta=25°C Max. Unit Vgs=10V, Id=8.5A 1.0 30 Tj=125°C Vgs=10V , charge Turn-on delay time Turn-on rise time Qgd td(on) tr Vgs=10V, Vds=15V 4.20 5.2 4.4
ELM Technology
Original
diode 98A ELM14824AA-N AO4824

复合

Abstract: ELM14614AA =-40V 同时åè—æ‰ N æ²é"å'Œ P æ²é"çš"å¤åäº§å"ã'' ·Id=6A(Vgs=10V) ·Id=-5A(Vgs=-10V) ·Rds(on) < 31mΩ(Vgs=10V) ·Rds(on) < 45mΩ(Vgs=-10V) ·Rds(on) < 45mΩ(Vgs=4.5V) ·Rds(on) < 63mΩ(Vgs , =250μA 1.5 导é'šæ—¶æ¼æžç"µæµ Id(on) Vgs=10V, Vds=5V 20 漏极 - 源极导é'šç"µé˜» Rds(on , ns ns ns 4.0 27.0 ns ns 19.0 nC Vgs=10V, Id=6A Ta=125â"ƒ Crss æ æžç"µé , μA Vgs=0V, Vds=20V, f=1MHz Vgs=0V, Vds=0V, f=1MHz Qg Vgs=10V, Vds=20V, Id=6A td(on) tr
ELM Technology
Original
ELM14614AA ELM14614AA-N AO4614

P2804ND5G

Abstract: '¢ â'¢ P-channel Vds=40V Id=7A Rds(on) < 28mΩ(Vgs=10V) Rds(on) < 49mΩ(Vgs=5V) Vds=-40V Id=-5.5A Rds(on) < 48mΩ(Vgs=-10V) Rds(on) < 85mΩ(Vgs=-5V) â Maximum Absolute Ratings , =0V, Vgs=±20V Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=10V, Vds=5V Static drain-source on-resistance , 1.2 2.0 μA S V 1 1 Vgs=10V, Id=7A 24 28 Vgs=5V, Id=6A Vds=10V, Id=7A If , 66 pF Qg Qgs Qgd Vgs=10V, Vds=20V, Id=7A 12.8 2.0 1.7 td(on) tr Vgs=10V, Vds
ELM Technology
Original
P2804ND5G ELM35601KA-S SEP-16-2005
Abstract: '¢ â'¢ P-channel Vds=30V Id=7A Rds(on) < 27.5mΩ(Vgs=10V) Rds(on) < 40mΩ(Vgs=4.5V) Vds=-30V Id=-6A Rds(on) < 34mΩ(Vgs=-10V) Rds(on) < 56mΩ(Vgs=-4.5V) â Maximum Absolute Ratings , ±20V Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=10V, Vds=5V Typ. Vds=24V, Vgs=0V Vds=20V, Vgs=0V, Tj , 1.0 20 μA A A 3 Vgs=10V, Id=7A 20.5 27.5 30.0 16 40.0 Forward , Gate-source charge Gate-drain charge Turn-on delay time Qgs Vgs=10V, Vds=15V, Id=7A Qgd td(on) 1.9 ELM Technology
Original
ELM34603AA-N P2803NVG JUL-25-2005

transistor 123 DL

Abstract: '¢ â'¢ P-channel Vds=40V Id=7A Rds(on) < 28mΩ(Vgs=10V) Rds(on) < 49mΩ(Vgs=5V) Vds=-40V Id=-5.5A Rds(on) < 48mΩ(Vgs=-10V) Rds(on) < 85mΩ(Vgs=-5V) â Maximum Absolute Ratings , (on) Vgs=10V, Vds=5V Vgs=10V, Id=7A Rds(on) Vgs=5V, Id=6A 1 10 ±100 1.2 50 24 38 , Qg Qgs Qgd Vgs=10V, Vds=20V, Id=7A 12.8 2.0 1.7 td(on) tr Vgs=10V, Vds=20V, Idâ , Body diode reverse recovery charge Vgs=-10V, Vds=-20V Id=-5.5A td(on) tr Vgs=-10V, Vds
ELM Technology
Original
transistor 123 DL
Abstract: '¢ â'¢ P-channel Vds=60V Id=4.5A Rds(on) < 58mΩ(Vgs=10V) Rds(on) < 85mΩ(Vgs=4.5V) Vds=-60V Id=-3.5A Rds(on) < 90mΩ(Vgs=-10V) Rds(on) < 135mΩ(Vgs=-4.5V) â Maximum Absolute Ratings , Igss Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=10V, Vds=5V Static drain-source on-resistance Rds , Vds=0V, Vgs=±20V μA 1.0 20 1.5 Vgs=10V, Id=4.5A 42 58 Vgs=4.5V, Id=4A 55 , =1MHz Crss 80 35 3 pF pF Qg Qgs Vgs=10V, Vds=30V, Id=4.5A Qgd td(on) tr 12.0 2.4 ELM Technology
Original

P5003QVG

Abstract: ©(Vgs=10V) Rds(on) < 45mΩ(Vgs=-10V) Vds=-30V ・ Rds(on) < 40.0mΩ(Vgs=4.5V) Rds(on) < 80mΩ(Vgs , § Vgs(th) Vds=Vgs, Id=250μA 1.0 ã'ªãƒ³ç¶æ'ドレã'¤ãƒ³é›»æµ Id(on) Vgs=10V, Vds=5V Vgs=10V , 1 1.3 2.6 Vgs=0V, Vds=15V f=1MHz Vgs=10V, Vds=15V Id=7A td(on) tr Vgs=10V, Vds , ã'ªãƒ³ç¶æ'ドレã'¤ãƒ³é›»æµ Id(on) Vgs=-10V, Vds=-5V Vgs=-10V, Id=-5A Rds(on) Vgs=-4.5V, Id=-4A Gfs Vds=-5V, Id , =0V, Vds=-15V f=1MHz Vgs=-10V, Vds=-15V Id=-5A td(on) tr Vgs=-10V, Vds=-10V td(off) Id=-1A, Rgen
ELM Technology
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P5003QVG ELM34600AA-N DEC-19-2005

2SK1796

Abstract: 2SK1804 (A) 85 20 0 10 0. 6 10 0.5 ton=35ns, toff=70nstyp 1D=0.5A,VGS=10V 295 GDS 2SK1772 1700 315 0 10 2 10 3 ton=135ns. toff=345nstyp ID=3A, VGS=10V 149 GDS 2SK1773 1830 730 0 10 1.5 10 4 ton=250ns, toff=440nstyp 1D=4A, VGS=10V 293 GDS 2SK1774 1730 310 0 10 1.6 10 4 ton=160ns, toff=315nstyp ID=4A, VGS=10V 293 GDS 2SK1775 1330 200 0 10 0. 6 10 6 ton=70ns, toff=115nstyp ID , 250typ 0 IDSS 127 GDS 2SK1806 740 150 0 10 4 10 2 ton=75ns,toff=180nstyp 1D=2A. VGS=10V 116B GDS
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2SK1784 2SK1785 2SK1792 2SK1793 2SK1794 2SK1795 2SK1796 2SK1804 2SK1713 LM714
Abstract: P-Channel -30V ID= 3.5A (VGS=10V) -2.7A (VGS=-10V) RDS(ON) RDS(ON) < 50m1 (VGS=10V) < 100m1 (VGS=-10V) < 70m1 (VGS=4.5V) < 170m1 (VGS=-4.5V) D1 D2 TSOP6 Top View Top View , Voltage VDS=VGS ID=250µA 1.5 ID(ON) On state drain current VGS=10V, VDS=5V RDS(ON) Static Drain-Source On-Resistance µA 20 C TJ=55° 5 ±100 VGS=10V, ID=3.5A Forward , Gate Source Charge Qgd VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=3.5A Gate Drain Charge Alpha & Omega Semiconductor
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AO6602
Abstract: ID= 6A (VGS=10V) -6.5A (VGS=-10V) RDS(ON) RDS(ON) < 30mâ"¦ (VGS=10V) < 28mâ"¦ (VGS=-10V , Voltage VDS=VGS ID=250µA 1.2 ID(ON) On state drain current VGS=10V, VDS=5V mA 30 ±100 2.4 V 25 30 40 48 33.5 VGS=10V, ID=6A nA 1.8 42 mâ"¦ 0.5 , nC Qg(4.5V) Total Gate Charge 2 2.55 3 nC VGS=10V, VDS=15V, ID=6A Qgs Gate , 2.2 3 nC 1.3 nC 4.5 VGS=10V, VDS=15V, RL=2.5â"¦, RGEN=3â"¦ 0.85 ns 2.5 ns Alpha & Omega Semiconductor
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AO4607
Abstract: efficiency further. FET1(N-Channel) VDS= 30V FET2(N-Channel) 30V ID= 8.8A (VGS=10V) 8A (VGS=10V) RDS(ON) TM RDS(ON) < 16m (VGS=10V) < 19m (VGS=10V) < 22m (VGS=4.5V) < 28m , ±20V VGS(th) Gate Threshold Voltage On state drain current VDS=VGS ID=250µA 1.1 VGS=10V, VDS=5V 60 ID(ON) TJ=125° C 20 100 nA 1.65 2.2 V 13.3 VGS=10V, ID=8.8A 16 , Gate Charge 21 30 Qg(4.5V) Total Gate Charge 10.4 nC VGS=10V, VDS=15V, ID=8.8A nC Alpha & Omega Semiconductor
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AO4930

CEP83A3 equivalent

Abstract: CEP50N06 Vgs@10V Vgs@4.5V Vgs@2.5V Vgs@1.8V Pd (W) 2.5 Qg(nC) Ids (A) 11 Vgs=10V Vgs=4.5V 31 , ) (V) Vgs@10V Vgs@4.5V Vgs@2.5V Vgs@1.8V (A) (W) Vgs=10V Vgs=4.5V (V) 20 48 48 , ) VGS(th) (V) Vgs@10V Vgs@4.5V Vgs@2.5V Vgs@1.8V (A) (W) Vgs=10V Vgs=4.5V (V) 20 , ) Vgs@10V Vgs@4.5V Vgs@2.5V Vgs@1.8V (A) (W) Vgs=10V Vgs=4.5V (V) 10 167 30 5500 , Pd Qg(nC) VGS(th) (V) Vgs@10V Vgs@4.5V Vgs@2.5V Vgs@1.8V (A) (W) Vgs=10V Vgs
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CEM3040 CEP83A3 equivalent CEP50N06 cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent 2928-8J CEM2082 CEM2108 CEM8206 CEM8207 CEM8208
Abstract: '¢ â'¢ P-channel Vds=60V Id=4.5A(Vgs=10V) Rds(on) < 56mΩ(Vgs=10V) Rds(on) < 77mΩ(Vgs=4.5V) Vds=-60V Id=-3.2A(Vgs=-10V) Rds(on) < 105mΩ(Vgs=-10V) Rds(on) < 135mΩ(Vgs=-4.5V) â Maximum , ) Vgs=10V, Vds=5V 20 2.1 100 3.0 μA nA V A Vgs=4.5V, Id=3A Static drain-source , Vgs=10V, Id=4.5A Tj=125°C Vgs=10V, Vds=30V, Id=4.5A Vgs=10V, Vds=30V td(off) Rl , Characteristics 100 Vgs=4.5V 70 60 50 Vgs=10V 40 30 20 0 5 10 15 Vgs=10V Id ELM Technology
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ELM14612AA-N 0E-06 AO4612

AO4612

Abstract: AO4612L n-channel VDS (V) = 60V ID = 4.5A (VGS=10V) RDS(ON) < 56m (VGS=10V) < 77m (VGS=4.5V) The AO4612 uses , IGSS VGS(th) Gate-Body leakage current Gate Threshold Voltage On state drain current VGS=10V, VDS=5V VGS=10V, ID=4.5A RDS(ON) gFS VSD IS SWITCHING PARAMETERS Qg(10V) Total Gate Charge , =250µA ID(ON) Typ A 11 0.74 m VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=30V, ID=4.5A VGS=10V , VGS=10V 40 30 20 VGS=10V ID=4.5A 1.8 1.6 VGS=4.5V ID=3.0A 1.4 1.2 1 0.8 0
Alpha & Omega Semiconductor
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AO4612L 0E-05

AOP606

Abstract: AOP606L (VGS=10V) -6.1A RDS(ON) RDS(ON) < 25m (VGS=10V) < 42m (VGS = -10V) < 30m (VGS=4.5V) < 52m (VGS = , ) Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=10V, VDS , Rg 2.1 17.8 TJ=125°C gFS µA 100 VGS=10V, ID=7.9A VSD Units pF 116 VGS=10V, VDS=30V, ID=7.9A pF 6 nC Gate Drain Charge 14.4 nC Turn-On DelayTime 7.4 ns 5.1 ns VGS=10V, VDS=30V, RL=3.9, RGEN=3 tD(off) Turn-Off DelayTime tf
Alpha & Omega Semiconductor
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AOP606 AOP606L

AO4611

Abstract: n-channel VDS (V) = 60V ID = 6.3A (VGS=10V) RDS(ON) < 25m (VGS=10V) < 30m (VGS=4.5V) p-channel -60V , Voltage VDS=VGS ID=250µA 1.5 ID(ON) On state drain current VGS=10V, VDS=5V 40 RDS(ON , Capacitance Rg 2.1 20 TJ=125°C gFS µA 100 VGS=10V, ID=6.3A VSD Units pF 116 VGS=10V, VDS=30V, ID=6.3A Qgs Gate Source Charge Qgd tD(on) tr Turn-On Rise Time tD , 14.4 nC Turn-On DelayTime 7.6 ns 5 ns VGS=10V, VDS=30V, RL=4.7, RGEN=3 ns
Alpha & Omega Semiconductor
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AO4611
Abstract: = 4.7A (VGS=10V) -3.4A (VGS=-10V) RDS(ON) RDS(ON) < 56mâ"¦ (VGS=10V) < 105mâ"¦ (VGS =-10V , ID(ON) On state drain current VGS=10V, VDS=5V 20 RDS(ON) Static Drain-Source , Transfer Capacitance Rg 2.3 42 TJ=125°C VSD 5 100 VGS=10V, ID=4.7A gFS Units pF 25 VGS=10V, VDS=30V, ID=4.7A pF 1.6 nC Qgd Gate Drain Charge 2.2 nC , ns VGS=10V, VDS=30V, RL=6â"¦, RGEN=3â"¦ tD(off) Turn-Off DelayTime tf Turn-Off Fall Alpha & Omega Semiconductor
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AOP607 AOP607L

AOP609

Abstract: are electrically identical. Features n-channel p-channel -60V VDS (V) = 60V ID = 4.7A (VGS=10V) -3.5A (VGS=-10V) RDS(ON) RDS(ON) < 60m (VGS=10V) < 115m (VGS =-10V) < 75m (VGS=4.5V) < 140m (VGS , =48V, VGS=0V TJ=55°C VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=4.7A TJ=125°C 1.5 20 2.4 , 2.5 1 1.4 5.4 5.5 17.2 2.9 25.4 29.4 2 7 3 VGS=10V, VDS=30V, ID=4.7A VGS=10V, VDS=30V, RL , ) Figure 4: On-Resistance vs. Junction Temperature VGS=10V ID=4.7A ID(A) 5.0V 4.5V 10 VDS=5V 125°C 15 25
Alpha & Omega Semiconductor
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AOP609 AOP609L 0E-01 0E-02 0E-03 0E-04
Abstract: Ratings N-channel â'¢ â'¢ â'¢ â'¢ P-channel Vds=40V Id=6A(Vgs=10V) Rds(on) < 31mΩ(Vgs=10V) Rds(on) < 45mΩ(Vgs=4.5V) Vds=-40V Id=-5A(Vgs=-10V) Rds(on) < 45mΩ(Vgs=-10V) Rds(on) < 63mÎ , =250μA Id(on) Vgs=10V, Vds=5V Vgs=10V Rds(on) Id=6A Tj=125°C Vgs=4.5V, Id=5A Vds=5V, Id=6A Is=1A, Vgs , PARAMETERS Crss Rg Total gate charge (10V) Total gate charge (4.5V) Qg Qg Vgs=10V, Vds , =6A 1.3 2.0 nC Qgd td(on) tr Vgs=10V, Vds=20V 2.3 4.2 3.3 3.0 5.5 4.5 nC ns ns ELM Technology
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AOP609

Abstract: 115m diode 60V ID = 4.7A (VGS=10V) -3.5A (VGS=-10V) RDS(ON) RDS(ON) < 60m (VGS=10V) < 115m (VGS =-10V , =250µA 1.5 ID(ON) On state drain current VGS=10V, VDS=5V 20 RDS(ON) Static Drain-Source , 2.5 3 nC Reverse Transfer Capacitance Rg 2.4 49 TJ=125°C gFS 5 250 VGS=10V, ID=4.7A VSD Units pF 30 VGS=10V, VDS=30V, ID=4.7A pF 1 nC Gate Drain Charge 1.4 nC Turn-On DelayTime 5.4 ns 5.5 ns VGS=10V, VDS=30V, RL=6, RGEN
Alpha & Omega Semiconductor
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115m diode

AO4616

Abstract: 20V P-Channel Power MOSFET 500A P-Channel -30V ID= 8A (VGS=10V) -7A (VGS=-10V) RDS(ON) RDS(ON) < 20m (VGS=10V) < 22m (VGS=-10V) < 28m (VGS=4.5V) < 40m (VGS=-4.5V) 100% UIS Tested 100% Rg Tested ESD , VGS=10V, VDS=5V 20 28 28 m 1 V 2.5 ID(ON) V 19.5 1.2 µA A VDS , 16.5 IGSS VGS(th) 40 VGS=10V, ID=8A RDS(ON) Static Drain-Source On-Resistance C TJ , ) Total Gate Charge 12 15 18 nC Qg(4.5V) Total Gate Charge 6 7.5 9 nC VGS=10V
Alpha & Omega Semiconductor
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AO4616 20V P-Channel Power MOSFET 500A

AOD603A

Abstract: -60V ID= 13A (VGS=10V) -13A (VGS=-10V) RDS(ON) RDS(ON) < 60m (VGS=10V) < 115m (VGS=-10V) < 85m (VGS=4.5V) < 150m (VGS=-4.5V) 100% UIS Tested 100% UIS Tested 100 , VGS=10V, VDS=5V Units 30 TJ=55° C 5 VDS=0V, VGS= ±20V µA ±100 2.4 3 V 47 60 90 110 85 mâ"¦ 1 V 12 VGS=10V, ID=12A nA A A RDS(ON , =1MHz Qgs Gate Source Charge VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=30V, ID=12A 1.2 nC Qgd
Alpha & Omega Semiconductor
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AOD603A

AO6602

Abstract: uis test inverter, suitable for a multitude of applications. Product Summary N-Channel VDS= 30V ID= 3.5A (VGS=10V) RDS(ON) < 50m (VGS=10V) < 70m (VGS=4.5V) P-Channel -30V -2.7A (VGS=-10V) RDS(ON) < 100m (VGS=-10V , TJ=55° VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=3.5A RDS(ON) gFS VSD IS Static , 35 23 3.5 4.05 VGS=10V, VDS=15V, ID=3.5A 2 0.55 1 4.5 VGS=10V, VDS=15V, RL=4.2, RGEN=3 IF=3.5A, dI/dt , Characteristics (Note E) 1.8 Normalized On-Resistance 1.6 1.4 1.2 1 VGS=4.5V ID=2A VGS=10V ID=3.5A 70 60 RDS
Alpha & Omega Semiconductor
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uis test
Abstract: '¢ â'¢ P-channel Vds=30V Id=6.9A(Vgs=10V) Rds(on) < 28mΩ(Vgs=10V) Rds(on) < 42mΩ(Vgs=4.5V) Vds=-30V Id=-5A(Vgs=-10V) Rds(on) < 52mΩ(Vgs=-10V) Rds(on) < 87mΩ(Vgs=-4.5V) â Maximum , drain-source on-resistance Rds(on) Vgs=10V, Id=6.9A Ta=125°C Gfs Vsd Is Input capacitance , =1MHz 77 3.0 3.6 pF Ω 13.84 17.00 nC 6.74 1.82 3.20 8.10 nC nC nC Qg Vgs=10V, Vds=15V, Id=6.9A td(on) tr Vgs=10V, Vds=15V td(off) RL=2.2Ω, Rgen=3Ω 820 mΩ pF pF ELM Technology
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