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VF59415046.72M Datasheet

Part Manufacturer Description PDF Type Ordering
VF59415046.72M ECM Electronics Wide Frequency Range, Very Low Phase Jitter, Wide Pullability, Standard Footprint, Wide Operating Temperature, EMI Shielded
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1 pages,
74.93 Kb

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VF59415046.72M

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Migration QDRTM II SRAM / QDRTM II+ SRAM 4 5 72M 5 36M 7 18M 8 DDR II SRAM / DDR II+ SRAM 9 72M 9 36M 11 18M 12 Low Latency DRAM 13 288M 13 QDR RAMs , Generation 150nm 2nd Generation 100nm 3rd Generation 450MHz 1.8Gbps 72M Density Up , 2009.9 QDR II SRAM / QDR II+ SRAM QDR II 72M bit 2: TA = 070 °C (×) PD44645092A PD44645092A 8M x 9 , -pin BGA (15 x 17mm) I/O QDR II 72M bit 4: TA = 070 °C (×) PD44645094A PD44645094A 8M x 9 ... NEC
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16 pages,
1158.26 Kb

samsung ddr quad data rate SRAM idt 150-NM TEXT
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Abstract: SSG4575 SSG4575 N Channel 6A, 60V,R DS(ON) 36m P Channel -4.2A, - 60V,R DS(ON) 72m Elektronische , SSG4575 SSG4575 N Channel 6A, 60V,R DS(ON) 36m P Channel -4.2A, - 60V,R DS(ON) 72m Elektronische Bauelemente , individual Page 2 of 7 SSG4575 SSG4575 N Channel 6A, 60V,R DS(ON) 36m P Channel -4.2A, - 60V,R DS(ON) 72m , Bauelemente N Channel 6A, 60V,R DS(ON) 36m P Channel -4.2A, - 60V,R DS(ON) 72m Enhancement Mode Power , 6A, 60V,R DS(ON) 36m P Channel -4.2A, - 60V,R DS(ON) 72m Enhancement Mode Power Mos.FET ... SeCoS
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7 pages,
615.77 Kb

P Channel Low Gate Charge 100A N channel MOS FET 60v 6a diode 30v N channel MOS FET n fet 60v 3a SSG4575 TEXT
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Abstract: voltage BCP 72M Type BCP 72M Marking PAs Ordering Code Q62702-C2517 Q62702-C2517 Pin Configuration O II , Collector-base capacitance VCB = 10 V, f= 1 MHz 1) Pulse test: t < 300ns; D < 2% BCP 72M Values typ. max , 1998-11-01 SIEMENS Total power dissipation Ptot = f ( T A*; Tg) * Package mounted on epoxy BCP 72M , = ^(^CEsat)- hFE = 10 BCP 72M Collector-emitter saturation voltage - ^CEsat ... OCR Scan
datasheet

4 pages,
261.21 Kb

marking PAs 72m transistor transistor marking 72m TEXT
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Abstract: replace two 72M density SRAMs or four 36M density SRAMs mounted on the board thereby reducing board space occupied by the SRAMs (see Figures 1 and 2). Figure 1: Two 72M density SRAMs replaced by a single 144M , core power supply and Idd is the operating current Bear in mind that two 72M SRAMs could be replaced with a single 144M SRAM. Core power dissipated by two 72M SRAMs = 1.8 * 2=3.6W Core Power dissipated , by the SRAM (Single 144M SRAM versus a single 72M SRAM) Core Pow er dissipated by the SRAMs (Tw ... Cypress Semiconductor
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5 pages,
64.73 Kb

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Abstract: SIEMENS BCP 72M PNP Silicon AF Power Transistor Preliminary data • Drain switch for RF , collector-emitter saturation voltage o II LD Q62702-C2517 Q62702-C2517 II PAs Package CÛ BCP 72M Pin , :-C u K/W SIEMENS BCP 72M Electrical Characteristics at TA = 25°C , unless otherwise , VCb = 10 V, f = 1 MHz 1) Pulse test: t < 300|as; D < 2% 100 MHz SIEMENS BCP 72M Total , SIEMENS BCP 72M DC current gain h FE = f U Ô Collector-emitter saturation voltage VQE = 2V ... OCR Scan
datasheet

4 pages,
50.72 Kb

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Abstract: BCP 72M PNP Silicon AF Power Transistor Preliminary data 4 · Drain switch for RF power , 72M PAs Q62702-C2517 Q62702-C2517 Package 1 = E 2 = C 3 = E 4 = B 5 = C SCT-595 SCT-595 Maximum Ratings , Cu Semiconductor Group Semiconductor Group 11 Jun-05-1998 1998-11-01 BCP 72M , < 300us; D < 2% Semiconductor Group Semiconductor Group 22 Jun-05-1998 1998-11-01 BCP 72M , -05-1998 1998-11-01 BCP 72M DC current gain h FE = f (I C) Collector-emitter saturation voltage VCE = 2V ... Siemens
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4 pages,
32.74 Kb

SCT-595 Q62702-C2517 marking PAs SCT-595 C2517 transistor marking 72m 72m transistor TEXT
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Abstract: Supplier RDRAM Component Testng Summary Table Device Part Number_Date Code Comment Hyundai 72M - 4Mx18 RD72E840 RD72E840_912 LG NEC 72M - 4Mx18 72M - 4Mx18 R72AE-840 R72AE-840_9917 UPD488385FB-C80 UPD488385FB-C80 , parameters tested except tH, tQmax, Iol, Ci Samsung 72M - 4Mx18 KM418RD4C-K80 KM418RD4C-K80_904 Pass all ... Intel
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2 pages,
7.17 Kb

45bf Hyundai Semiconductor UPD488385FB-C80-45-BF1 UPD488385FB-C80-45BF1 KM418RD8C-RK80 NEC RDRAM 4Mx1 SAMSUNG RLC testing of diode Kingston Technology HP8753E HP83000 TEXT
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Abstract: Page II+ SRAM TM TM TM TM Lineup and Migration 4 5 72M 5 36M 7 18M 8 DDR II SRAM / DDR II+ SRAM 9 72M 9 36M 11 18M 12 Low Latency DRAM 13 , 2nd Generation 100nm 3rd Generation 450MHz 1.8Gbps 72M Density Up Performance Up , 2009.9 QDR II SRAM / QDR II+ SRAM QDR II 72M bit 2-word Burst Operation (Temperature range TA = 0 to 70 , must not exceed VDD. QDR II 72M bit 4-word Burst Operation (Temperature range TA = 0 to 70 °C) Part ... NEC
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16 pages,
679.32 Kb

samsung ddr EF25 72M-Bit 1M x 72 TEXT
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Abstract: BCP 72M PNP Silicon AF Power Transistor 4 Drain switch for RF power amplifier stages For AF , 1 VPW05980 VPW05980 Type Marking BCP 72M PAs Pin Configuration Package 1 = E1 2 = C 3 = , -20-1999 BCP 72M Electrical Characteristics at TA = 25°C, unless otherwise specified and E1 and E2 , test: t < 300 s; D < 2% 2 Oct-20-1999 BCP 72M Total power dissipation Ptot = f (TA , 10 0 tp 3 Oct-20-1999 BCP 72M DC current gain hFE = f (IC ) Collector-emitter ... Infineon Technologies
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datasheet

4 pages,
93.28 Kb

transistor marking 72m SCT-595 marking PAs SCT-595 marking E1 SCT-595 72m transistor TEXT
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Abstract: Resistance 190m Ω±20% 160±30% 50x50x3.5mm 72m Ω±20% 72±30% 50x50x3.5mm 19m Ω , , 72m Ω±20% AWCCA50N50H40-C02-B AWCCA50N50H40-C02-B Transmitter or Receiver, 1 Coil 1 Layer, 6.3uH, 72±30 , , 165±30% 50x50x4.0mm 72m ±20% 75±30% 50x50x5.0mm 19m Ω±20% The second table continues , DC Resistance 170±30% 53x53x5.0mm 72m ±20% 66±30% 53x53x5.0mm 19mΩ±20% 80±30 , , 50x50x3.5mm 160±30% 72m Ω±20% AWCCA-50N50H35-C02-B AWCCA-50N50H35-C02-B Tx or Rx, Coil 6.3uH, 50x50x3.5mm 72±30 ... Abracon
Original
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22 pages,
783.1 Kb

TEXT
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Archived Files

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No abstract text available
/download/53748667-169538ZC/led7seg.zip ()
Infineon 19/02/2000 30.26 Kb ZIP led7seg.zip
IIEE 126 102 1E-3 IINV 130 105 0 IIVOS 124 105 60U LLCN1A 105 106 7.2M LLCN1B 105 107 7.2M LLNV1 IINV 135 105 0 IIVOS 129 105 -53U LI_15 105 109 7.2M LI_31 105 106 7.2M LLI0 105 108 55.43N LLI1
/datasheets/files/linear/documents/d11802/lt1568.txt
Linear 09/02/2007 6.59 Kb TXT lt1568.txt
IIEE 126 102 1E-3 IINV 130 105 0 IIVOS 124 105 60U LLCN1A 105 106 7.2M LLCN1B 105 107 7.2M LLNV1 IINV 135 105 0 IIVOS 129 105 -53U LI_15 105 109 7.2M LI_31 105 106 7.2M LLI0 105 108 55.43N LLI1
/datasheets/files/linear/docs/software and simulation/lt1568.txt
Linear 28/02/2008 6.59 Kb TXT lt1568.txt
BCP 72M  PNP Silicon AF Power Transistor for RF power BCP 72M   bcp72m.pdf  10-1999  89
/datasheets/files/infineon/wwwinf~1.com/produc~1/pro~2430.htm
Infineon 26/10/2000 32.8 Kb HTM pro~2430.htm
No abstract text available
/datasheets/files/spicemodels/misc/modelos/spice_complete/powmos4.lib
Spice Models 18/04/2010 182.6 Kb LIB powmos4.lib
hosts in close proximity (72m) to one another. The TSB14C01A TSB14C01A provides a way to add 1394
/datasheets/files/texas-instruments/data/sc/docs/msp/1394/14c01.htm
Texas Instruments 08/02/1999 4.95 Kb HTM 14c01.htm
close proximity (72m) to one another. The TSB14C01A TSB14C01A provides a way to add 1394 connections to
/datasheets/files/texas-instruments/data/wwwti~1.com/sc/docs/products/msp/intrface/serdes/1394/14c01a.htm
Texas Instruments 28/01/2000 9.2 Kb HTM 14c01a.htm
close proximity (72m) to one another. The TSB14C01A TSB14C01A provides a way to add 1394 connections to
/datasheets/files/texas-instruments/data/www.ti.com/sc/docs/products/msp/intrface/serdes/1394/14c01a.htm
Texas Instruments 29/01/2000 9.2 Kb HTM 14c01a.htm
* IGBT Electrical Parameters * * Product: FGH60N60UFD FGH60N60UFD * 600V, 60A Field Stop IGBT * Model Format: SPICE2G6 *- .SUBCKT FGH60N60UFD FGH60N60UFD C G E LE 74 E 1.67n RE 83 74 1.67m RC 85 C 7.2m RG G 82 1.58 CGC 82 C 1p CGD 92 93 6.8n CGE E 82 2.0n M1 81 82 83 83 MOS W=1u L=1u Q1 83 81 85 VPNP R1 92 0 1 R2 91 94 1 RLV 95 0 1 DBE 85 81 DE DSD 83 81 DO DHV 94 93 DR
/datasheets/files/fairchild/simulation-models/fgh60n60ufd.lib
Fairchild 22/10/2012 1.97 Kb LIB fgh60n60ufd.lib
;Gen. Purpose;30V 50mA .MODEL SD211DE SD211DE NMOS (LEVEL=1 VTO=1.1 KP=7.2M GAMMA=.992 + PHI=.75 LAMBDA=22.5M * *SRC=SD213DE SD213DE;SD213DE SD213DE;MOSFETs N;Gen. Purpose;10V 50mA .MODEL SD213DE SD213DE NMOS (LEVEL=1 VTO=1.1 KP=7.2M GAMMA=.992 NMOS (LEVEL=1 VTO=1.1 KP=7.2M GAMMA=.992 + PHI=.75 LAMBDA=22.5M RD=11 RS=13 IS=3.25E-13 25E-13 PB=.8 MJ=.46
/datasheets/files/spicemodels/misc/modelos/spice_complete/mosfet.lib
Spice Models 18/04/2010 19.02 Kb LIB mosfet.lib