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VF59415046.72M Datasheet

Part Manufacturer Description PDF Type
VF59415046.72M ECM Electronics Wide Frequency Range, Very Low Phase Jitter, Wide Pullability, Standard Footprint, Wide Operating Temperature, EMI Shielded Original

VF59415046.72M

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Migration QDRTM II SRAM / QDRTM II+ SRAM 4 5 72M 5 36M 7 18M 8 DDR II SRAM / DDR II+ SRAM 9 72M 9 36M 11 18M 12 Low Latency DRAM 13 288M 13 QDR RAMs , Generation 150nm 2nd Generation 100nm 3rd Generation 450MHz 1.8Gbps 72M Density Up , 2009.9 QDR II SRAM / QDR II+ SRAM QDR II 72M bit 2: TA = 070 °C (×) PD44645092A 8M x 9 , -pin BGA (15 x 17mm) I/O QDR II 72M bit 4: TA = 070 °C (×) PD44645094A 8M x 9 NEC
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BGA15 150-NM 72M-BIT quad data rate SRAM idt samsung ddr M16000JJHV0SG 450MH 300MH 270MH PD44164095B PD44164185B
Abstract: SSG4575 N Channel 6A, 60V,R DS(ON) 36m P Channel -4.2A, - 60V,R DS(ON) 72m Elektronische , SSG4575 N Channel 6A, 60V,R DS(ON) 36m P Channel -4.2A, - 60V,R DS(ON) 72m Elektronische Bauelemente , individual Page 2 of 7 SSG4575 N Channel 6A, 60V,R DS(ON) 36m P Channel -4.2A, - 60V,R DS(ON) 72m , Bauelemente N Channel 6A, 60V,R DS(ON) 36m P Channel -4.2A, - 60V,R DS(ON) 72m Enhancement Mode Power , 6A, 60V,R DS(ON) 36m P Channel -4.2A, - 60V,R DS(ON) 72m Enhancement Mode Power Mos.FET SeCoS
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n fet 60v 3a 30v N channel MOS FET 60v 6a diode N channel MOS FET P Channel Low Gate Charge 100A 4575SS
Abstract: voltage BCP 72M Type BCP 72M Marking PAs Ordering Code Q62702-C2517 Pin Configuration O II , Collector-base capacitance VCB = 10 V, f= 1 MHz 1) Pulse test: t < 300ns; D < 2% BCP 72M Values typ. max , 1998-11-01 SIEMENS Total power dissipation Ptot = f ( T A*; Tg) * Package mounted on epoxy BCP 72M , = ^(^CEsat)- hFE = 10 BCP 72M Collector-emitter saturation voltage - ^CEsat -
OCR Scan
transistor marking 72m 72m transistor marking PAs SCT-595
Abstract: replace two 72M density SRAMs or four 36M density SRAMs mounted on the board thereby reducing board space occupied by the SRAMs (see Figures 1 and 2). Figure 1: Two 72M density SRAMs replaced by a single 144M , core power supply and Idd is the operating current Bear in mind that two 72M SRAMs could be replaced with a single 144M SRAM. Core power dissipated by two 72M SRAMs = 1.8 * 2=3.6W Core Power dissipated , by the SRAM (Single 144M SRAM versus a single 72M SRAM) Core Pow er dissipated by the SRAMs (Tw Cypress Semiconductor
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Abstract: SIEMENS BCP 72M PNP Silicon AF Power Transistor Preliminary data â'¢ Drain switch for RF , collector-emitter saturation voltage o II LD Q62702-C2517 II PAs Package CÛ BCP 72M Pin , :-C u K/W SIEMENS BCP 72M Electrical Characteristics at TA = 25°C , unless otherwise , VCb = 10 V, f = 1 MHz 1) Pulse test: t < 300|as; D < 2% 100 MHz SIEMENS BCP 72M Total , SIEMENS BCP 72M DC current gain h FE = f U Ã" Collector-emitter saturation voltage VQE = 2V -
OCR Scan
Abstract: BCP 72M PNP Silicon AF Power Transistor Preliminary data 4 · Drain switch for RF power , 72M PAs Q62702-C2517 Package 1 = E 2 = C 3 = E 4 = B 5 = C SCT-595 Maximum Ratings , Cu Semiconductor Group Semiconductor Group 11 Jun-05-1998 1998-11-01 BCP 72M , < 300us; D < 2% Semiconductor Group Semiconductor Group 22 Jun-05-1998 1998-11-01 BCP 72M , -05-1998 1998-11-01 BCP 72M DC current gain h FE = f (I C) Collector-emitter saturation voltage VCE = 2V Siemens
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C2517 marking PAs SCT-595 VPW05980
Abstract: Supplier RDRAM Component Testng Summary Table Device Part Number_Date Code Comment Hyundai 72M - 4Mx18 RD72E840_912 LG NEC 72M - 4Mx18 72M - 4Mx18 R72AE-840_9917 UPD488385FB-C80 , parameters tested except tH, tQmax, Iol, Ci Samsung 72M - 4Mx18 KM418RD4C-K80_904 Pass all Intel
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HP83000 HP8753E KM418RD8C-RK80 testing of diode Kingston Technology SAMSUNG RLC 45bf KM416RD8C-RK80
Abstract: Page II+ SRAM TM TM TM TM Lineup and Migration 4 5 72M 5 36M 7 18M 8 DDR II SRAM / DDR II+ SRAM 9 72M 9 36M 11 18M 12 Low Latency DRAM 13 , 2nd Generation 100nm 3rd Generation 450MHz 1.8Gbps 72M Density Up Performance Up , 2009.9 QDR II SRAM / QDR II+ SRAM QDR II 72M bit 2-word Burst Operation (Temperature range TA = 0 to 70 , must not exceed VDD. QDR II 72M bit 4-word Burst Operation (Temperature range TA = 0 to 70 °C) Part NEC
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72M-Bit 1M x 72 EF25 G0706 M16000EJHV0SG00
Abstract: BCP 72M PNP Silicon AF Power Transistor 4 Drain switch for RF power amplifier stages For AF , 1 VPW05980 Type Marking BCP 72M PAs Pin Configuration Package 1 = E1 2 = C 3 = , -20-1999 BCP 72M Electrical Characteristics at TA = 25°C, unless otherwise specified and E1 and E2 , test: t < 300 s; D < 2% 2 Oct-20-1999 BCP 72M Total power dissipation Ptot = f (TA , 10 0 tp 3 Oct-20-1999 BCP 72M DC current gain hFE = f (IC ) Collector-emitter Infineon Technologies
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kw33 marking E1 SCT-595
Abstract: Resistance 190m Ω±20% 160±30% 50x50x3.5mm 72m Ω±20% 72±30% 50x50x3.5mm 19m Ω , , 72m Ω±20% AWCCA50N50H40-C02-B Transmitter or Receiver, 1 Coil 1 Layer, 6.3uH, 72±30 , , 165±30% 50x50x4.0mm 72m ±20% 75±30% 50x50x5.0mm 19m Ω±20% The second table continues , DC Resistance 170±30% 53x53x5.0mm 72m ±20% 66±30% 53x53x5.0mm 19mΩ±20% 80±30 , , 50x50x3.5mm 160±30% 72m Ω±20% AWCCA-50N50H35-C02-B Tx or Rx, Coil 6.3uH, 50x50x3.5mm 72±30 Abracon
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WT-50506010K2-A11-G AWCCA-50N50H50-C01-B WT-52522520K2-A1-G AWCCA-50N50H50-C02-B AWCCA-53N53H50-C01-B AWCCA-53N53H50-C02-B
Abstract: 100M 1.0M 1.0M 1.0M 100M 10.M 7.2M 7.2M 7.2M 10M 70p 70p 90p 90p 90p 14p 50n 50n 50n 50n 50n 1.0n , 150 S 150 S TO·5 TO·5 TO·5 TO·5 TO·5 TO·46 TO·5 TO·5 TO·5 TO·5 ~g~ 25M 25M 25M 7.2M 7.2M 100M 100M 6.0M 6.0M 7.2M 10.M 20M 2.5M 2.5M 1.0M 3.2M 3.2M 10M 24M 10.M 15M 140M 15M 140M 140M 140M 12p 45p General Transistor
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2N2002 2N2424 2N2425 OC202 CS9020 MPS9680 transistor 2N4258 BCY24 2N2165 2N2166 2N2162 2N2163 2N2167 2N2164
Abstract: Rambus DRAM Socket Series NP362, NP367 and NP291 Specifications Series NP362 and NP367 1,000M min. at 100V DC Insulation Resistance: Dielectric Withstanding Voltage: 100V AC for 1 minute Contact Resistance: 100m max. at 10mA/20mV max. Operating Temperature Range: ­40°C to +150°C Contact Force: 10g to 12g/pin 2.0 kg max. Operation Force: 72M, 128M and 144M Materials and Finish , Copper (BeCu) Plating: Gold over Nickel Series NP291 72M Features u Tweezer style contacts for Yamaichi Electronics
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IC-595-1 yamaichi IC Test Socket
Abstract: - S.O.DIMM Connectors SERIES ^^QJ 72m SMT 72P Right-Angle SMT 59 . 69±o. 13 8.255±0 1 .27X (36-1 , (CONNECTOR MOUNTING SIDE) S.O.DIMM Connectors SERIES 6401 72m smt 72P Right-Angle SMT 32X (1 0-1 , SERIES 6401 72m smt 72P Right-Angle SMT 12.5 SECT. C-C 309-Ï.D 305±0.3 '1 (64) tP/N -
OCR Scan
di 856 jt 6401 sect 1301/TRAY 30/TRAY 20/TRAY U-JHIM63
Abstract: low- D irect RDRAM TM 64/72-M bit (256K xl6/18xl6d) Datasheet Page 1 D irect R D R A M TM 64/72-M bit (25 6 K xl6/18xl6d) D atasheet P in O U tS a n d D e fin itio n s Edge-Bonded , D irect RDRAM TM 64/72-M bit (2 5 6 K x l6 /l8 x l6 d ) Datasheet Table 3: Pin Description , 'S % * 1 D irect RDRAM TM 64/72-M bit (2 5 6 K x l6 /l8 x l6 d ) General Description , fields which PRELIM INARY Page 5 D irect RDRAM TM 64/72-M bit (256K xl6/18xl6d) D atasheet -
OCR Scan
IDA45 RDRAM Clock 64/72-M 600MH 800MH DL0035-00
Abstract: 100M 1.0M 1.0M 1.0M 100M 10.M 7.2M 7.2M 7.2M 10M 70p 70p 90p 90p 90p 14p 50n 50n 50n 50n 50n 1.0n , 150 S 150 S TO·5 TO·5 TO·5 TO·5 TO·5 TO·46 TO·5 TO·5 TO·5 TO·5 ~g~ 25M 25M 25M 7.2M 7.2M 100M 100M 6.0M 6.0M 7.2M 10.M 20M 2.5M 2.5M 1.0M 3.2M 3.2M 10M 24M 10.M 15M 140M 15M 140M 140M 140M 12p 45p Short Form Catalog
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2N1005 2N1006 2N907 PNP Emihus LOW-POWER SILICON PNP mullard germanium raytheon catalog Raytheon germanium diode 2N1676 2N1677 2N2003 2N3764A BC201 2N3319
Abstract: Unloaded Q (Qu? Hz Ãà ut H i Toko's Specifications 72K Hz ¿b * ±6 %ZX 72M Hz pFi #(int)-t- pF(eXt) ± Kit j Hz tfat He pF ± %{int)+ pFlext) ± f¿Ht 1ÌT 80 SO^'Bt 72M Hi Stamp 4 Stamping aide Number of -
OCR Scan
72M Capacitor MAR-10-2000
Abstract: % 54m(42m 04 CDRCH12D78BHF-150MC 150 15±20% 72m(58m 05 CDRCH12D78BHF-220MC 220 , -6R8NC 6R8 27.2±30% 92m(72m) 6.0(7.1) 2.6(3.0) 03 CDRCH12D78BHF-100MC 100 40±20 , 3.3(3.7) 06 CDRCH12D78BHF-330MC 330 33±20% 72m(60m) 5.5(6.5) 2.7(3.0) 07 Sumida
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6r8 COIL 372M smd 72m 468m CDRCH12D78B CDRCH12D78BHF-4R7NC CDRCH12D78BHF-6R8NC CDRCH12D78BHF CDRCH12D78BHF-470MC CDRCH12D78BHF-680MC
Abstract: 300 300 300 300 300 300 300 300 300 5.0m 7.2m 7.2m 7.2m 1.8m 1.8m 5.0m 150 150 150 150 150 150 Interconnect Devices
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2SC1861 PE155A BF417 LOW-POWER SILICON NPN mpsa42q sm 6aa PN3440 BFN22 BF622 BF422S PE422 S922TS
Abstract: TIPS 0.15 [.006]© T TYP AT HOLD DOWN TIPS 88m m 72m m 72m m 0.73+0.02 [.029 + .001 , SPACES AT 24m m 88m m _ 65.33 _2.572] 72m m [ .28 6] 4.08 [.572] 8.1 8 [.322 , ] DETAIL P 72m m B A S IC D I M E N S I O N S FOR ODD NUMBER OF SPACES 56m m [.1611 -
OCR Scan
02DEC04 28JAN00 31MAR2000
Abstract: SERIES SPD73 SPD73-122M SPD73-2A2M SP073-352M SPD73-Ì72M SPD7'M32M SP073-1Q3M SPD73-123M SPD73-153M SP073-133M SPD73-223M SPD73-273M SPD73-333M SPD73-393M SPD7^i73M SPD73-563M SPD73-633M SPD73-323M SPD73-1Q4M SPD73-124M SPD73-154M SPD73-1&4M SPD73-224M SPD73-274M SPD73-334M SPD73-3WM SPD7^i74M SP073-564M SPD73-6&4M SPD73-324M SPD73-105M SERIES SPD74 Series SPD73 & SPD74 Shielded Surface Mount Inductors , 0.0*9 zim 0.081 0 091 TSTT 0.15 0.17 T23~~ 026 0.35 SP07A-122M SPD7A-242M SPD74-352M SPD7«72M -
OCR Scan
SPD74-153M 352M 5S4M 242M sp074 2A2M SP074-6B2M SPD74-1Q3M 5PD74-123M
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