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Part : DS-VDS-ST-U1 Supplier : Lattice Semiconductor Manufacturer : Symmetry Electronics Stock : - Best Price : $1,018.8200 Price Each : $1,018.8200
Part : DS-VDS-ST-UR1 Supplier : Lattice Semiconductor Manufacturer : Symmetry Electronics Stock : - Best Price : $526.1000 Price Each : $526.1000
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VDS47

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 4.4+0/-0.3 2MIN ï'· High voltage operation VDS=47V ï'· High output power Po=40.5dBm(TYP , =25ï'°C Electrical characteristics Symbol 1.9±0.4 ï'· Vds=47V 1.â' 5 RECOMMENDED BIAS CONDITIONS (Ta , cut-off voltage VDS=47V,ID=3mA 3dB gain compression power VDS=47V,ID(RF off)=90mA P1dB 1dB , . (Ta 80ï'°C) ï'· Bias conditions Vds=47V , Ids=90mA ï'· Time 10hrs 1 < High-power GaN HEMT , C BAND / 10W non - matched MGF0840G S-parameters( Ta=25deg.C , VDS=47(V),IDS=90(mA) ) S Mitsubishi
Original
Abstract: 4.4+0/-0.3 2MIN ï'· High voltage operation VDS=47V ï'· High output power Po=43.5dBm(TYP , =25ï'°C Electrical characteristics Symbol 1.9±0.4 ï'· Vds=47V 1.â' 5 RECOMMENDED BIAS CONDITIONS (Ta , cut-off voltage VDS=47V,ID=6mA 3dB gain compression power VDS=47V,ID(RF off)=170mA P1dB 1dB , . (Ta 80ï'°C) ï'· Bias conditions Vds=47V , Ids=170mA ï'· Time 10hrs 1 < High-power GaN HEMT , / 20W non - matched MGF0843G S-parameters( Ta=25deg.C , VDS=47(V),IDS=180(mA) ) S Parameters(Typ Mitsubishi
Original
Abstract: operation VDS=47V High output power Po=43.5dBm(TYP.) @f=2.6GHz,P3dB High efficiency d=60%(TYP.) @f=2.6GHz , /UMTS/WiMAX QUALITY GG Packaging 1.65 RECOMMENDED BIAS CONDITIONS Vds=47V Ids=170mA Rg , efficiency Linear power gain Thermal resistance Test conditions Min. VDS=47V,ID=6mA VDS=47V,ID(RF off , to stabilize a characteristics of GaN-HEMT. (Ta80C) Bias conditions Vds=47V , Ids=170mA Time 10hrs , matched PRELIMINARY MGF0843G S-parameters( Ta=25deg.C , VDS=47(V),IDS=180(mA) ) f (GHz) 0.6 1.0 Mitsubishi
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Abstract: operation VDS=47V High output power Po=46.5dBm(TYP.) @f=2.6GHz,P3dB High efficiency d=60%(TYP.) @f=2.6GHz , /UMTS/WiMAX QUALITY GG Packaging 1.65 RECOMMENDED BIAS CONDITIONS Vds=47V Ids=340mA Rg , resistance Test conditions Min. VDS=47V,ID=12mA VDS=47V,ID(RF off)=340mA f=2.6GHz *2 : Pin , conditions Vds=47V , Ids=340mA Time 10hrs Note Publication Date : May., 2011 1 1.9±0.4 9.0±0.2 , =25deg.C , VDS=47(V),IDS=350(mA) ) f (GHz) 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 4.2 4.6 5.0 5.4 5.8 6.2 6.6 7.0 Mitsubishi
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MGF0846G
Abstract: operation VDS=47V High output power Po=46.5dBm(TYP.) @f=2.6GHz,P3dB High efficiency d=60%(TYP.) @f=2.6GHz , /UMTS/WiMAX QUALITY GG Packaging 1.65 RECOMMENDED BIAS CONDITIONS Vds=47V Ids=340mA Rg , efficiency Linear power gain Thermal resistance Test conditions Min. VDS=47V,ID=12mA VDS=47V,ID(RF off , to stabilize a characteristics of GaN-HEMT. (Ta80C) Bias conditions Vds=47V , Ids=340mA Time 10hrs , matched PRELIMINARY MGF0846G S-parameters( Ta=25deg.C , VDS=47(V),IDS=350(mA) ) f (GHz) 0.6 1.0 Mitsubishi
Original
Abstract: operation VDS=47V High output power Po=43.5dBm(TYP.) @f=2.6GHz,P3dB High efficiency d=60%(TYP.) @f=2.6GHz , /UMTS/WiMAX QUALITY GG Packaging 1.65 RECOMMENDED BIAS CONDITIONS Vds=47V Ids=170mA Rg , resistance Test conditions Min. VDS=47V,ID=6mA VDS=47V,ID(RF off)=170mA f=2.6GHz *2 : Pin , conditions Vds=47V , Ids=170mA Time 10hrs Note Publication Date : May., 2011 1 1.9±0.4 9.0±0.2 , ) > MGF0843G L to C BAND / 20W non - matched PRELIMINARY MGF0843G S-parameters( Ta=25deg.C , VDS=47(V Mitsubishi
Original
Abstract: operation VDS=47V High output power Po=40.5dBm(TYP.) @f=2.6GHz,P3dB High efficiency d=60%(TYP.) @f=2.6GHz , /UMTS/WiMAX QUALITY GG Packaging 1.65 RECOMMENDED BIAS CONDITIONS Vds=47V Ids=90mA Rg , efficiency Linear power gain Thermal resistance Test conditions Min. VDS=47V,ID=3mA VDS=47V,ID(RF off , to stabilize a characteristics of GaN-HEMT. (Ta80C) Bias conditions Vds=47V , Ids=90mA Time 10hrs , matched PRELIMINARY MGF0840G S-parameters( Ta=25deg.C , VDS=47(V),IDS=90(mA) ) f (GHz) 0.6 1.0 Mitsubishi
Original
Abstract: 4.4+0/-0.3 2MIN ï'· High voltage operation VDS=47V ï'· High output power Po=46.5dBm(TYP , =25ï'°C Electrical characteristics Symbol 1.9±0.4 ï'· Vds=47V 1.â' 5 RECOMMENDED BIAS CONDITIONS (Ta , cut-off voltage VDS=47V,ID=12mA 3dB gain compression power VDS=47V,ID(RF off)=340mA P1dB , GaN-HEMT. (Ta 80ï'°C) ï'· Bias conditions Vds=47V , Ids=340mA ï'· Time 10hrs 1 < High-power GaN , C BAND / 40W non - matched MGF0846G S-parameters( Ta=25deg.C , VDS=47(V),IDS=350(mA) ) S Mitsubishi
Original

s band gan 10W

Abstract: operation VDS=47V High output power Po=40.5dBm(TYP.) @f=2.6GHz,P3dB High efficiency d=60%(TYP.) @f=2.6GHz , /UMTS/WiMAX QUALITY GG Packaging 1.65 RECOMMENDED BIAS CONDITIONS Vds=47V Ids=90mA Rg , Thermal resistance Test conditions Min. VDS=47V,ID=3mA VDS=47V,ID(RF off)=90mA f=2.6GHz *2 : Pin , conditions Vds=47V , Ids=90mA Time 10hrs Note Publication Date : May., 2011 1 1.9±0.4 9.0±0.2 , =25deg.C , VDS=47(V),IDS=90(mA) ) f (GHz) 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 4.2 4.6 5.0 5.4 5.8 6.2 6.6 7.0
Mitsubishi
Original
s band gan 10W
Abstract: C BAND / 10W non - matched MGF0840G S-parameters( Ta=25deg.C , VDS=47(V),IDS=90(mA) ) S -
OCR Scan
0045S00 I55G4