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Part Manufacturer Description Datasheet BUY
ISL99135BDRZ-T Intersil Corporation 35A DrMOS Module with Diode Emulation and PS4; 16; Temp Range: 0° to 70° visit Intersil
ISL99125BDRZ-T Intersil Corporation 25A DrMOS Module with Diode Emulation and PS4; 16; Temp Range: 0° to 70° visit Intersil
ISL58315CRTZ-T13 Intersil Corporation High Speed Triple Laser Diode Drivers; TQFN40; Temp Range: 0° to 70° visit Intersil Buy
ICM7218AIJIZ Intersil Corporation LED DRVR 64Segment 5V 28-Pin CDIP visit Intersil
ISL58315CRTZ-T7 Intersil Corporation High Speed Triple Laser Diode Drivers; TQFN40; Temp Range: 0° to 70° visit Intersil Buy
ICM7218DIJIZ Intersil Corporation LED DRVR 64Segment 5V 28-Pin CDIP visit Intersil

V10-40 diode

Catalog Datasheet MFG & Type PDF Document Tags

voltage divider rule

Abstract: 7404E-09 .21 Table of figures FIGURE 1: CALCULATION BASICS FROM LUMINANCE TO DIODE CURRENT , .8 FIGURE 3: CALCULATION BASICS FROM ILLUMINANCE TO DIODE CURRENT .9 FIGURE 4: CALCULATION BASICS FROM LUMINOUS INTENSITY TO DIODE CURRENT .13 FIGURE 5: CALCULATION BASICS FROM REMISSION TO DIODE CURRENT , luminance to diode current 2.1 Explanations for the calculation This Chapter explains the several areas
MAZeT
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IPA50R500CE

Abstract: DIODE V10-20 .13 Hard Commutation on Conducting Body Diode , benefits FEATURES Reduced energy stored in output capacitance (Eoss) High body diode ruggedness Reduced , . 2.2.2 BJT (Bipolar Junction Transistor)-Effect If the body diode conducts in forward direction, minority carriers remaining in the base region during diode recovery can cause a BJT action with , topology the forward current (ISD) is forced into the body diode to clamp the output at either the positive
Infineon Technologies
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Abstract: devices are made with Gallium Phosphide Green Light Emitting Diode. The Yellow source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Yellow Light Emitting Diode. Package , Viewing Angle [1] 21/2 60° Typ. 100 40 White Diffused 50 20 Electrical / Optical , mA V -40°C To +85°C 260°C For 3 Seconds 260°C For 5 Seconds SPEC NO: DSAA5863 APPROVED: WYNEC Kingbright
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L-59CB/1GYW NOV/11/2010

1n5819HW-7-F

Abstract: Schottky Barrier Diode SOD-123 Features: â'¢â'ƒ Extremely Low VF â'¢â'ƒ Low Stored Change , voltage DC reverse voltage VRRM VRWM VR 40 V VR(RMS) 28 V Io 1 A IFSM , www.newark.com Page 28/02/13 V1.0 Schottky Barrier Diode Electrical Characteristics: Ratings at , (BR) 40 - V IR=1mA Forward voltage VF - 06 0.9 V IF=1A IF=3A Reverse voltage leakage current IR - 1 mA VR=40V Diode capacitance CD - 120
Multicomp
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1n5819HW-7-F 1N5819HW-7-F
Abstract: Phosphide Green Light Emitting Diode. The Yellow source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Yellow Light Emitting Diode. Package Dimensions Notes: 1. All , 60° Typ. 50 40 WHITE DIFFUSED 18 18 Electrical / Optical Characteristics at TA , -40°C To +85°C 260°C For 3 Seconds 260°C For 5 Seconds SPEC NO: DSAB5132 APPROVED: WYNEC REV NO: V Kingbright
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L-59BL/1GYW APR/23/2010
Abstract: color devices are made with AlGaInP on GaAs substrate Light Emitting Diode. The Green source color devices are made with AlGaInP on GaAs substrate Light Emitting Diode. Package Dimensions Notes: 1 , 75 30 150 -40°C To +85°C -40°C To +85°C Units mW mA mA SPEC NO: DSAE5773 APPROVED: WYNEC REV Kingbright
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L-1387QMP/1SURKCGKW NOV/10/2010
Abstract: Surface Mount Schottky Barrier Diode BAS40TW-7-F Features: â'¢â'ƒ â'¢â'ƒ â'¢â'ƒ â'¢â , 40 V Forward continuous current IFM 200 mA Average rectified output current Io , Page 27/02/13 V1.0 Surface Mount Schottky Barrier Diode Electrical Characteristics , V(BR)R 40 - V IR=10µA Forward voltage VF - 0.38 1 V IF=1mA IF , www.farnell.com www.newark.com Page 27/02/13 V1.0 Surface Mount Schottky Barrier Diode Package Multicomp
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BAS40DW-04-7-F
Abstract: device is made with AlGaInP (on GaAs substrate) light emitting diode chip. The Green source color devices are made with AlGaInP on GaAs substrate Light Emitting Diode. Package Dimensions Notes: 1. All , 150 Units mW mA mA V -40°C To +85°C -40°C To +85°C SPEC NO: DSAC0137 APPROVED: WYNEC REV Kingbright
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KPTB-1612SYKCGKC
Abstract: made with Gallium Aluminum Arsenide Red Light Emitting Diode. The Super Bright Green source color devices are made with Gallium Phosphide Green Light Emitting Diode. Package Dimensions Notes: 1. All , . Super Bright Red 75 30 155 5 Super Bright Green 62.5 25 140 Units mW mA mA V -40°C To +85°C 260 Kingbright
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L-119SRSGWT-CC DSAA4625 APR/17/2010
Abstract: . Light Emitting Diode. Long life - solid state reliability. The Green source color devices are made with Gallium RoHS compliant. Phosphide Green Light Emitting Diode. Package Dimensions Notes , Lens Type Viewing Angle [1] Min. 40 80 15 High Efficiency Red (GaAsP/GaP) L Kingbright
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L-819EGW DSAB4014 NOV/23/2010

TBA12-11EGWA

Abstract: operation. Light Emitting Diode. High contrast and light output. The Green source color devices are made with Gallium Easy mounting on P.C. boards or sockets. Phosphide Green Light Emitting Diode , Operating/Storage Temperature -40°C To +85°C Lead Solder Temperature [2] V 260°C For 3-5 Seconds
Kingbright
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TBA12-11EGWA DSAD2433 JUL/22/2011

l115wegw

Abstract: L-115WEGW LEAD. Light Emitting Diode. I.C. COMPATIBLE. The Green source color devices are made with Gallium LONG LIFE - SOLID STATE RELIABILITY. Phosphide Green Light Emitting Diode. RoHS COMPLIANT , Guide Part No. Dice Iv (mcd) [2] @ 20mA Lens Type Viewing Angle [1] Min. 10 40 , Voltage 5 Operating / Storage Temperature V -40°C To +85°C Lead Solder Temperature [2
Kingbright
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L-115WEGW l115wegw DSAB9091 JUL/07/2007
Abstract: Phosphide on Gallium Phosphide Pure Orange Light Emitting Diode. The Super Bright Green source color devices are made with Gallium Phosphide Green Light Emitting Diode. Package Dimensions Notes: 1. All , Orange 62.5 25 145 5 Super Bright Green 62.5 25 140 Units mW mA mA V -40°C To +85°C -40°C To Kingbright
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KPB-3025NSGC DSAA5776 APR/26/2010
Abstract: with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode. The Super Bright Green source color devices are made with Gallium Phosphide Green Light Emitting Diode. Package , Red 75 30 160 5 Super Bright Green 62.5 25 140 Units mW mA mA V -40°C To +85°C -40°C To +85°C Kingbright
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KPBD-3224ESGC DSAC2535
Abstract: substrate Light Emitting Diode. The Green source color devices are made with AlGaInP on GaAs substrate Light Emitting Diode. Package Dimensions Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance , mW mA mA V -40°C To +85°C -40°C To +85°C SPEC NO: DSAD3553 APPROVED: WYNEC REV NO: V Kingbright
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KPBD-3224SURKCGKC
Abstract: made with AlGaInP (on GaAs substrate) light emitting diode chip. The Green source color devices are made with AlGaInP on GaAs substrate Light Emitting Diode. Package Dimensions Notes: 1. All , 150 Units mW mA mA V -40°C To +85°C -40°C To +85°C SPEC NO: DSAC0138 APPROVED: WYNEC REV Kingbright
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KPTB-1615SYKCGKC MAY/03/2010
Abstract: lead. Light Emitting Diode. Long life - solid state reliability. The Yellow source color , Emitting Diode. Package Dimensions Notes: 1. All dimensions are in millimeters (inches). 2 , Guide Part No. Dice Lens Type Iv (mcd) [2] @ 20mA Viewing Angle [1] Min. 15 40 Kingbright
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DSAB9905 DEC/22/2010
Abstract: T-1(3mm) BI-COLOR INDICATOR LAMP Part Number: L-3VGYW Green Yellow Features Description Uniform light output. The Green source color devices are made with Gallium Low power consumption. Phosphide Green Light Emitting Diode. 3 leads with one common lead. The Yellow source color devices , Phosphide Yellow Light RoHS compliant. Emitting Diode. Package Dimensions Notes: 1. All , Viewing Angle [1] Min. 15 40 10 Green (GaP) L-3VGYW Typ. 2 1/2 15 60° White Kingbright
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DSAB5702 DEC/01/2010

SOT23-6

Abstract: SSF3416 IDM 40 A PD 2.5 W TJ,TSTG -55 To 150 RJA 62.5 /W Drain , Qgd 3.8 nC Body Diode Reverse Recovery Time Trr 13 nS Body Diode Reverse Recovery Charge Qrr 7 nC VDS=15V,ID=9A,VGS=10V IF=9A, dI/dt=100A/µs DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) VSD VGS=0V,IS=3A 0.7 1.2 V NOTES: 1 , ©Silikron Semiconductor CO.,LTD. Figure 12 Source- Drain Diode Forward 4 http://www.silikron.com
Silikron Semiconductor
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SSF3416 SOT23-6 9A SOT23

SOP-8

Abstract: SSF3616 IDM 40 A PD 2.5 W TJ,TSTG -55 To 150 RJA 62.5 /W Drain , Qgd 3.8 nC Body Diode Reverse Recovery Time Trr 13 nS Body Diode Reverse Recovery Charge Qrr 7 nC VDS=15V,ID=9A,VGS=10V IF=9A, dI/dt=100A/µs DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) VSD VGS=0V,IS=3A 0.7 1.2 V NOTES: 1. Repetitive , ©Silikron Semiconductor CO.,LTD. Figure 12 Source- Drain Diode Forward 4 http://www.silikron.com
Silikron Semiconductor
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SSF3616 SOP-8 application PWM
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