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V10-40 diode

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: .21 Table of figures FIGURE 1: CALCULATION BASICS FROM LUMINANCE TO DIODE CURRENT , .8 FIGURE 3: CALCULATION BASICS FROM ILLUMINANCE TO DIODE CURRENT .9 FIGURE 4: CALCULATION BASICS FROM LUMINOUS INTENSITY TO DIODE CURRENT .13 FIGURE 5: CALCULATION BASICS FROM REMISSION TO DIODE CURRENT , luminance to diode current 2.1 Explanations for the calculation This Chapter explains the several areas ... MAZeT
Original
datasheet

21 pages,
481.94 Kb

3641 04 Analysis on the ADC basic geometrical formulae DIODE V10-20 optical sensor optical sensor with an amplifier photometrical resistor fix value 8242E 7404E-09 voltage divider rule TEXT
datasheet frame
Abstract: .13 Hard Commutation on Conducting Body Diode , benefits FEATURES Reduced energy stored in output capacitance (Eoss) High body diode ruggedness Reduced , . 2.2.2 BJT (Bipolar Junction Transistor)-Effect If the body diode conducts in forward direction, minority carriers remaining in the base region during diode recovery can cause a BJT action with , topology the forward current (ISD) is forced into the body diode to clamp the output at either the positive ... Infineon Technologies
Original
datasheet

20 pages,
842.13 Kb

SWITCHING bjt 500v smps resonant llc full bridge LLC resonant IPA50R280C 400W pwm smps schematic mosfet equivalent IPA50R280CE IPA50R500CE TEXT
datasheet frame
Abstract: devices are made with Gallium Phosphide Green Light Emitting Diode. The Yellow source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Yellow Light Emitting Diode. Package , Viewing Angle [1] 21/2 60° Typ. 100 40 White Diffused 50 20 Electrical / Optical , mA V -40°C To +85°C 260°C For 3 Seconds 260°C For 5 Seconds SPEC NO: DSAA5863 DSAA5863 APPROVED: WYNEC ... Kingbright
Original
datasheet

7 pages,
322.61 Kb

L-59CB/1GYW TEXT
datasheet frame
Abstract: Schottky Barrier Diode SOD-123 Features: •  Extremely Low VF •  Low Stored Change , voltage DC reverse voltage VRRM VRWM VR 40 V VR(RMS) 28 V Io 1 A IFSM , www.newark.com Page 28/02/13 V1.0 Schottky Barrier Diode Electrical Characteristics: Ratings at , (BR) 40 - V IR=1mA Forward voltage VF - 06 0.9 V IF=1A IF=3A Reverse voltage leakage current IR - 1 mA VR=40V Diode capacitance CD - 120 ... Multicomp
Original
datasheet

4 pages,
289.07 Kb

TEXT
datasheet frame
Abstract: Phosphide Green Light Emitting Diode. The Yellow source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Yellow Light Emitting Diode. Package Dimensions Notes: 1. All , 60° Typ. 50 40 WHITE DIFFUSED 18 18 Electrical / Optical Characteristics at TA , -40°C To +85°C 260°C For 3 Seconds 260°C For 5 Seconds SPEC NO: DSAB5132 DSAB5132 APPROVED: WYNEC REV NO: V ... Kingbright
Original
datasheet

7 pages,
278.45 Kb

L-59BL/1GYW TEXT
datasheet frame
Abstract: color devices are made with AlGaInP on GaAs substrate Light Emitting Diode. The Green source color devices are made with AlGaInP on GaAs substrate Light Emitting Diode. Package Dimensions Notes: 1 , 75 30 150 -40°C To +85°C -40°C To +85°C Units mW mA mA SPEC NO: DSAE5773 DSAE5773 APPROVED: WYNEC REV ... Kingbright
Original
datasheet

7 pages,
235.06 Kb

L-1387QMP/1SURKCGKW TEXT
datasheet frame
Abstract: Surface Mount Schottky Barrier Diode BAS40TW-7-F BAS40TW-7-F Features: •  •  •  •â , 40 V Forward continuous current IFM 200 mA Average rectified output current Io , Page 27/02/13 V1.0 Surface Mount Schottky Barrier Diode Electrical Characteristics , V(BR)R 40 - V IR=10ÂuA Forward voltage VF - 0.38 1 V IF=1mA IF , www.farnell.com www.newark.com Page 27/02/13 V1.0 Surface Mount Schottky Barrier Diode Package ... Multicomp
Original
datasheet

4 pages,
936.94 Kb

BAS40TW-7-F TEXT
datasheet frame
Abstract: device is made with AlGaInP (on GaAs substrate) light emitting diode chip. The Green source color devices are made with AlGaInP on GaAs substrate Light Emitting Diode. Package Dimensions Notes: 1. All , 150 Units mW mA mA V -40°C To +85°C -40°C To +85°C SPEC NO: DSAC0137 DSAC0137 APPROVED: WYNEC REV ... Kingbright
Original
datasheet

6 pages,
233.46 Kb

KPTB-1612SYKCGKC TEXT
datasheet frame
Abstract: made with Gallium Aluminum Arsenide Red Light Emitting Diode. The Super Bright Green source color devices are made with Gallium Phosphide Green Light Emitting Diode. Package Dimensions Notes: 1. All , . Super Bright Red 75 30 155 5 Super Bright Green 62.5 25 140 Units mW mA mA V -40°C To +85°C 260 ... Kingbright
Original
datasheet

7 pages,
275.58 Kb

L-119SRSGWT-CC TEXT
datasheet frame
Abstract: . Light Emitting Diode. Long life - solid state reliability. The Green source color devices are made with Gallium RoHS compliant. Phosphide Green Light Emitting Diode. Package Dimensions Notes , Lens Type Viewing Angle [1] Min. 40 80 15 High Efficiency Red (GaAsP/GaP) L ... Kingbright
Original
datasheet

7 pages,
498.42 Kb

L-819EGW TEXT
datasheet frame

Archived Files

Abstract Saved from Date Saved File Size Type Download
No abstract text available
/download/30089349-903408ZC/sbaa114.zip ()
Texas Instruments 10/03/2005 889.87 Kb ZIP sbaa114.zip
; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAT54A BAT54A D ;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAT54C BAT54C D ;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAT54S BAT54S D ;Diodes;Si; 30.0V 0.200A 2.00ns Diodes INC Schottky Diode .MODEL DI_PD3S0230 PD3S0230 D ( IS=400n RS=0.378 0.01 +BV = 40 TT = 6.02e-9 ) * .MODEL BAS40 BAS40_2 D ( +LEVEL = 1
/datasheets/files/diodes-inc/spice-model/spicemodels_all.txt
Diodes, Inc. 04/09/2012 1443.84 Kb TXT spicemodels_all.txt
) *SRC=BAS40 BAS40;DI_BAS40 BAS40;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode .MODEL DI_BAS40 BAS40 D Inc. Schottky diode, dual, one node of two .MODEL DI_BAT54A BAT54A D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAT54C BAT54C D ( IS=34.9u RS=0.210 BV=30.0 Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAT54S BAT54S D ( IS=34.9u RS=0.210 BV=30.0 2.00ns Diodes INC Schottky Diode .MODEL DI_PD3S0230 PD3S0230 D ( IS=400n RS=0.378 BV=30.0 IBV=2.00u +
/datasheets/files/diodes-inc/spice-model/all.txt
Diodes, Inc. 23/10/2012 1445.73 Kb TXT all.txt
OUTPUT RESISTANCE AND CAPACITANCE * 3 ACCURATE CATCH DIODE I V CHARACTERISTIC * 4 ACCURATE RON AND CAPACITANCE * 3 ACCURATE CATCH DIODE I V CHARACTERISTIC * 4 ACCURATE RON TEMPERATURE COEFFICIENT * 5 D5M Q2 70 54 4 Q1M R12 35 8 0.7 R18 37 9 0.7 R20 33 8 0.7 E3 40 4 50 76 1 E5 41 4 76 38 1 E7 43 4 41 4 -1 E8 44 4 40 4 -1 V2 38 4 7.45 V8 50 4 2.55 Q3 59 55 4 Q1M Q4 59 51 4 Q1M V14 27 73 S10 32 60 40 4 S5M S11 56 23 70 4 S11M S12 31 13 14 4 S5M S13 32 60 29 4 S5M R39 4 77 10E3 R47 78
/datasheets/files/spicemodels/misc/apex_pwm.lib
Spice Models 19/12/2001 83.87 Kb LIB apex_pwm.lib
and GND. Output current limiting is provided. Inputs are compatible with TTL and CMOS and are diode
/datasheets/files/texas-instruments/data/html/slls110b.htm
Texas Instruments 31/05/1997 1.3 Kb HTM slls110b.htm
) *SRC=BAS40 BAS40;DI_BAS40 BAS40;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode .MODEL DI_BAS40 BAS40 D Inc. Schottky diode, dual, one node of two .MODEL DI_BAT54A BAT54A D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAT54C BAT54C D ( IS=34.9u RS=0.210 BV=30.0 Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAT54S BAT54S D ( IS=34.9u RS=0.210 BV=30.0 2.00ns Diodes INC Schottky Diode .MODEL DI_PD3S0230 PD3S0230 D ( IS=400n RS=0.378 BV=30.0 IBV=2.00u +
/datasheets/files/diodes-inc/spice-model/diodes_schottky-diodes.txt
Diodes, Inc. 17/10/2012 27.56 Kb TXT diodes_schottky-diodes.txt
; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAT54A BAT54A D ;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAT54C BAT54C D ;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAT54S BAT54S D ;Diodes;Si; 30.0V 0.200A 2.00ns Diodes INC Schottky Diode .MODEL DI_PD3S0230 PD3S0230 D ( IS=400n RS=0.378 0.01 +BV = 40 TT = 6.02e-9 ) * .MODEL BAS40 BAS40_2 D ( +LEVEL = 1
/datasheets/files/diodes-inc/spice-model/spicemodels_diodes_schottky-diodes.txt
Diodes, Inc. 04/09/2012 27.56 Kb TXT spicemodels_diodes_schottky-diodes.txt
: - >>> This Subdirectory is still under construction. >>> Not all diode types listed in package equivalent circuits for SIEMENS diodes. Please see the diode data sheets for details. Under the subdirectory CHIPS you find SPICE 2G6 LIB for SIEMENS diode chips. Please refer to file shows all diode types and how the SPICE 2G6 chip data and package equivalent circuit text block have to be combined to get the desired diode type. DF8CA/README6.TXT V1.0 9.7.97
/datasheets/files/infineon/ehdata/nl_diode/readme6.txt
Infineon 09/06/1997 0.91 Kb TXT readme6.txt
package and reverse diode. - In the files BFP4XX-S.TXT you will find parameters in WITHOUT package and reverse diode. Package and reverse diode can be added according to
/datasheets/files/siemens/ehdata/nlsieget/content.txt
Siemens 04/08/1994 1.06 Kb TXT content.txt
compatible with TTL and CMOS and are diode protected against negative transients. This device operates from
/datasheets/files/texas-instruments/data/wwwti~1.com/sc/docs/products/analog/ua9636~1.htm
Texas Instruments 28/01/2000 15.5 Kb HTM ua9636~1.htm