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Part Manufacturer Description Datasheet BUY
TPD4E004DSFR Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD3E001DRY Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD2E001YFPR Texas Instruments DIODE UNIDIRECTIONAL, SILICON, TVS DIODE, LEAD FREE, DSBGA-4, Transient Suppressor visit Texas Instruments
UC1611J/883B Texas Instruments SILICON, RECTIFIER DIODE visit Texas Instruments
UC1610J/883B Texas Instruments SILICON, BRIDGE RECTIFIER DIODE visit Texas Instruments

V10-40 diode

Catalog Datasheet MFG & Type PDF Document Tags

voltage divider rule

Abstract: 7404E-09 .21 Table of figures FIGURE 1: CALCULATION BASICS FROM LUMINANCE TO DIODE CURRENT , .8 FIGURE 3: CALCULATION BASICS FROM ILLUMINANCE TO DIODE CURRENT .9 FIGURE 4: CALCULATION BASICS FROM LUMINOUS INTENSITY TO DIODE CURRENT .13 FIGURE 5: CALCULATION BASICS FROM REMISSION TO DIODE CURRENT , luminance to diode current 2.1 Explanations for the calculation This Chapter explains the several areas
MAZeT
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IPA50R500CE

Abstract: DIODE V10-20 .13 Hard Commutation on Conducting Body Diode , benefits FEATURES Reduced energy stored in output capacitance (Eoss) High body diode ruggedness Reduced , . 2.2.2 BJT (Bipolar Junction Transistor)-Effect If the body diode conducts in forward direction, minority carriers remaining in the base region during diode recovery can cause a BJT action with , topology the forward current (ISD) is forced into the body diode to clamp the output at either the positive
Infineon Technologies
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Abstract: devices are made with Gallium Phosphide Green Light Emitting Diode. The Yellow source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Yellow Light Emitting Diode. Package , Viewing Angle [1] 21/2 60° Typ. 100 40 White Diffused 50 20 Electrical / Optical , mA V -40°C To +85°C 260°C For 3 Seconds 260°C For 5 Seconds SPEC NO: DSAA5863 APPROVED: WYNEC Kingbright
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L-59CB/1GYW NOV/11/2010

1n5819HW-7-F

Abstract: Schottky Barrier Diode SOD-123 Features: â'¢â'ƒ Extremely Low VF â'¢â'ƒ Low Stored Change , voltage DC reverse voltage VRRM VRWM VR 40 V VR(RMS) 28 V Io 1 A IFSM , www.newark.com Page 28/02/13 V1.0 Schottky Barrier Diode Electrical Characteristics: Ratings at , (BR) 40 - V IR=1mA Forward voltage VF - 06 0.9 V IF=1A IF=3A Reverse voltage leakage current IR - 1 mA VR=40V Diode capacitance CD - 120
Multicomp
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1n5819HW-7-F 1N5819HW-7-F
Abstract: Phosphide Green Light Emitting Diode. The Yellow source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Yellow Light Emitting Diode. Package Dimensions Notes: 1. All , 60° Typ. 50 40 WHITE DIFFUSED 18 18 Electrical / Optical Characteristics at TA , -40°C To +85°C 260°C For 3 Seconds 260°C For 5 Seconds SPEC NO: DSAB5132 APPROVED: WYNEC REV NO: V Kingbright
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L-59BL/1GYW APR/23/2010
Abstract: color devices are made with AlGaInP on GaAs substrate Light Emitting Diode. The Green source color devices are made with AlGaInP on GaAs substrate Light Emitting Diode. Package Dimensions Notes: 1 , 75 30 150 -40°C To +85°C -40°C To +85°C Units mW mA mA SPEC NO: DSAE5773 APPROVED: WYNEC REV Kingbright
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L-1387QMP/1SURKCGKW NOV/10/2010
Abstract: Surface Mount Schottky Barrier Diode BAS40TW-7-F Features: â'¢â'ƒ â'¢â'ƒ â'¢â'ƒ â'¢â , 40 V Forward continuous current IFM 200 mA Average rectified output current Io , Page 27/02/13 V1.0 Surface Mount Schottky Barrier Diode Electrical Characteristics , V(BR)R 40 - V IR=10µA Forward voltage VF - 0.38 1 V IF=1mA IF , www.farnell.com www.newark.com Page 27/02/13 V1.0 Surface Mount Schottky Barrier Diode Package Multicomp
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BAS40DW-04-7-F
Abstract: device is made with AlGaInP (on GaAs substrate) light emitting diode chip. The Green source color devices are made with AlGaInP on GaAs substrate Light Emitting Diode. Package Dimensions Notes: 1. All , 150 Units mW mA mA V -40°C To +85°C -40°C To +85°C SPEC NO: DSAC0137 APPROVED: WYNEC REV Kingbright
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KPTB-1612SYKCGKC
Abstract: . Light Emitting Diode. Long life - solid state reliability. The Green source color devices are made with Gallium RoHS compliant. Phosphide Green Light Emitting Diode. Package Dimensions Notes , Lens Type Viewing Angle [1] Min. 40 80 15 High Efficiency Red (GaAsP/GaP) L Kingbright
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L-819EGW DSAB4014 NOV/23/2010

TBA12-11EGWA

Abstract: operation. Light Emitting Diode. High contrast and light output. The Green source color devices are made with Gallium Easy mounting on P.C. boards or sockets. Phosphide Green Light Emitting Diode , Operating/Storage Temperature -40°C To +85°C Lead Solder Temperature [2] V 260°C For 3-5 Seconds
Kingbright
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TBA12-11EGWA DSAD2433 JUL/22/2011
Abstract: made with Gallium Aluminum Arsenide Red Light Emitting Diode. The Super Bright Green source color devices are made with Gallium Phosphide Green Light Emitting Diode. Package Dimensions Notes: 1. All , . Super Bright Red 75 30 155 5 Super Bright Green 62.5 25 140 Units mW mA mA V -40°C To +85°C 260 Kingbright
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L-119SRSGWT-CC DSAA4625 APR/17/2010

l115wegw

Abstract: L-115WEGW LEAD. Light Emitting Diode. I.C. COMPATIBLE. The Green source color devices are made with Gallium LONG LIFE - SOLID STATE RELIABILITY. Phosphide Green Light Emitting Diode. RoHS COMPLIANT , Guide Part No. Dice Iv (mcd) [2] @ 20mA Lens Type Viewing Angle [1] Min. 10 40 , Voltage 5 Operating / Storage Temperature V -40°C To +85°C Lead Solder Temperature [2
Kingbright
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L-115WEGW l115wegw DSAB9091 JUL/07/2007
Abstract: Phosphide on Gallium Phosphide Pure Orange Light Emitting Diode. The Super Bright Green source color devices are made with Gallium Phosphide Green Light Emitting Diode. Package Dimensions Notes: 1. All , Orange 62.5 25 145 5 Super Bright Green 62.5 25 140 Units mW mA mA V -40°C To +85°C -40°C To Kingbright
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KPB-3025NSGC DSAA5776 APR/26/2010
Abstract: with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode. The Super Bright Green source color devices are made with Gallium Phosphide Green Light Emitting Diode. Package , Red 75 30 160 5 Super Bright Green 62.5 25 140 Units mW mA mA V -40°C To +85°C -40°C To +85°C Kingbright
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KPBD-3224ESGC DSAC2535
Abstract: substrate Light Emitting Diode. The Green source color devices are made with AlGaInP on GaAs substrate Light Emitting Diode. Package Dimensions Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance , mW mA mA V -40°C To +85°C -40°C To +85°C SPEC NO: DSAD3553 APPROVED: WYNEC REV NO: V Kingbright
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KPBD-3224SURKCGKC
Abstract: made with AlGaInP (on GaAs substrate) light emitting diode chip. The Green source color devices are made with AlGaInP on GaAs substrate Light Emitting Diode. Package Dimensions Notes: 1. All , 150 Units mW mA mA V -40°C To +85°C -40°C To +85°C SPEC NO: DSAC0138 APPROVED: WYNEC REV Kingbright
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KPTB-1615SYKCGKC MAY/03/2010
Abstract: lead. Light Emitting Diode. Long life - solid state reliability. The Yellow source color , Emitting Diode. Package Dimensions Notes: 1. All dimensions are in millimeters (inches). 2 , Guide Part No. Dice Lens Type Iv (mcd) [2] @ 20mA Viewing Angle [1] Min. 15 40 Kingbright
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DSAB9905 DEC/22/2010
Abstract: T-1(3mm) BI-COLOR INDICATOR LAMP Part Number: L-3VGYW Green Yellow Features Description Uniform light output. The Green source color devices are made with Gallium Low power consumption. Phosphide Green Light Emitting Diode. 3 leads with one common lead. The Yellow source color devices , Phosphide Yellow Light RoHS compliant. Emitting Diode. Package Dimensions Notes: 1. All , Viewing Angle [1] Min. 15 40 10 Green (GaP) L-3VGYW Typ. 2 1/2 15 60° White Kingbright
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DSAB5702 DEC/01/2010

SOT23-6

Abstract: SSF3416 IDM 40 A PD 2.5 W TJ,TSTG -55 To 150 RJA 62.5 /W Drain , Qgd 3.8 nC Body Diode Reverse Recovery Time Trr 13 nS Body Diode Reverse Recovery Charge Qrr 7 nC VDS=15V,ID=9A,VGS=10V IF=9A, dI/dt=100A/µs DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) VSD VGS=0V,IS=3A 0.7 1.2 V NOTES: 1 , ©Silikron Semiconductor CO.,LTD. Figure 12 Source- Drain Diode Forward 4 http://www.silikron.com
Silikron Semiconductor
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SSF3416 SOT23-6 9A SOT23

SOP-8

Abstract: SSF3616 IDM 40 A PD 2.5 W TJ,TSTG -55 To 150 RJA 62.5 /W Drain , Qgd 3.8 nC Body Diode Reverse Recovery Time Trr 13 nS Body Diode Reverse Recovery Charge Qrr 7 nC VDS=15V,ID=9A,VGS=10V IF=9A, dI/dt=100A/µs DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) VSD VGS=0V,IS=3A 0.7 1.2 V NOTES: 1. Repetitive , ©Silikron Semiconductor CO.,LTD. Figure 12 Source- Drain Diode Forward 4 http://www.silikron.com
Silikron Semiconductor
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SSF3616 SOP-8 application PWM
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