U/D2555NL - Datasheet Archive

 

S amHop Microelectronics C orp. MAR ,15 2005 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S

 

S T U/D2555NL U/D2555NL S amHop Microelectronics C orp. MAR ,15 2005 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS (ON) S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable. 43@ V G S = 10V 55V 19A TO-252 and TO-251 P ackage. 58@ V G S = 4.5V D D G D G S S TU S E R IE S TO-252AA(D-P AK) S G S TD S E R IE S TO-251(l-P AK) S AB S OL UTE MAXIMUM R ATINGS (T A =25 C unles s otherwis e noted) S ymbol Limit Unit Drain-S ource Voltage V DS 55 V Gate-S ource Voltage V GS 20 V 19 15 A A IDM 35 A IS 15 A P arameter 25 C a Drain C urrent-C ontinuous @ Ta -P ulsed 70 C b Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a ID Ta= 25 C Ta=70 C Operating Junction and S torage Temperature R ange PD T J , T S TG 42 28 -55 to 150 W C THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-C ase R JC 3 C /W Thermal R esistance, Junction-to-Ambient R JA 50 C /W S T U/D2555NL U/D2555NL N-Channel ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) Parameter 5 Min Typ C Max Unit S ymbol Condition Drain-S ource Breakdown Voltage BV DS S V GS = 0V, ID = 250uA Zero Gate Voltage Drain Current IDS S V DS = 44V, V GS = 0V 1 Gate-Body Leakage IGS S V GS = 20V, V DS = 0V 100 nA Gate Threshold Voltage V GS (th) V DS = V GS , ID = 250uA Drain-S ource On-S tate R esistance R DS (ON) On-S tate Drain Current ID(ON) gFS OFF CHAR ACTE R IS TICS 55 V uA ON CHAR ACTE R IS TICS b Forward Transconductance 1.8 2.5 V V GS =10V, ID = 8A 28 43 m ohm V GS =4.5V, ID= 4A 42 58 m ohm V DS = 5V, V GS = 10V V DS = 5V, ID = 8A 1.4 35 A 11 S DYNAMIC CHAR ACTE R IS TICS c Input Capacitance Output Capacitance C OS S R everse Transfer Capacitance CRSS Gate resistance Rg S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time V DS =30V, V GS = 0V f =1.0MH Z V GS =0V, V DS = 0V, f=1.0MH Z 928 1100 PF 99 113 PF 60 C IS S 70 PF 3 ohm c tD(ON) Turn-Off Delay Time tr tD(OFF) Fall Time Qg ns 18 26.9 21 ns 30.9 ns 11.2 13.1 ns V DS =15V, ID =8A,V GS =10V 16.6 19 nC 7.7 9.1 3.4 nC tf Total Gate Charge 9.5 V DS =15V, ID =8A,V GS =4.5V R ise Time 8 V DD = 30V ID = 1 A V GS = 10V R GE N = 6 ohm Gate-S ource Charge Q gs Gate-Drain Charge Q gd V DS =15V, ID = 8A V GS =10V 2 2.9 3.3 4.3 nC nC S T U/D2555NL U/D2555NL E LE CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted) Parameter Min Typ Max Unit Condition S ymbol DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS a Diode Forward Voltage 0.9 V GS = 0V, Is = 15A VSD 1.2 Notes a.Pulse Test:Pulse Width 300us, Duty Cycle 2%. b.Guaranteed by design, not subject to production testing. 20 20 V G S =5V V G S =4.5V V G S =10V 12 V G S =4V 8 4 0 15 I D , Drain C urrent (A) ID , Drain C urrent(A) 16 V G S =3V T j=125 C 10 25 C 0 0 0.5 1 1.5 2 3 2.5 0 V DS , Drain-to-S ource Voltage (V ) 1 2 4 3 6 5 V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics F igure 2. Trans fer C haracteris tics 1500 R DS (ON) , On-R es is tance Normalized 1.6 1250 C , C apacitance (pF ) -55 C 5 1000 C is s 750 500 250 1.4 V G S =10V I D =8A 1.2 1.0 0.8 0.6 C os s 0 C rs s 0 5 10 15 20 25 0.4 -55 30 -25 0 25 50 75 100 125 T j( C ) V DS , Drain-to S ource Voltage (V ) T j, J unction T emperature ( C ) F igure 3. C apacitance F igure 4. On-R es is tance Variation with Drain C urrent and Temperature 3 V B V DS S , Normalized Drain-S ource B reakdown V oltage 1.3 V DS =V G S I D =250uA 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 1.15 ID=250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature F igure 6. B reakdown V oltage V ariation with T emperature 20.0 18 15 Is , S ource-drain current (A) gF S , T rans conductance (S ) V DS =10V 12 9 6 3 10.0 1.0 0 0 5 10 15 0.4 20 0.6 0.8 1.0 1.2 1.4 I DS , Drain-S ource C urrent (A) V S D , B ody Diode F orward V oltage (V ) F igure 7. T rans conductance V ariation with Drain C urrent F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 60 10 V DS =15V I D =8A 8 I D , Drain C urrent (A) V G S , G ate to S ource V oltage (V ) 6 V th, Normalized G ate-S ource T hres hold V oltage S T U/D2555NL U/D2555NL 6 4 2 0 10 R 3 6 9 12 15 18 Qg, T otal G ate C harge (nC ) N) L im it 10m 10 0m 1s s s DC V G S =10V S ingle P ulse T A =25 C 0.1 0.1 21 24 (O 11 0.03 0 DS 1 10 50 60 V DS , Drain-S ource V oltage (V ) F igure 10. Maximum S afe O perating Area F igure 9. G ate C harge 4 S T U/D2555NL U/D2555NL V DD ton V IN D td(off) tf 90% 90% V OUT V OUT VG S R GE N toff tr td(on) RL 10% INVE R TE D 10% 6 G 90% S V IN 50% 50% 10% P ULS E WIDTH F igure 12. S witching Waveforms F igure 11. S witching T es t C ircuit Thermal Resistance Normalized Transient 10 1 0.5 0.2 P DM 0.1 0.1 0.05 t1 0.02 on 0.01 0.01 0.00001 1. 2. 3. 4. Single Pulse 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 5 10 t2 R thJ A (t)=r (t) * R thJ A R thJ A =S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 100 1000 S T U/D2555NL U/D2555NL 5 95 7 84 9 6.00 L2 35 05 85 0.94 4 3 0 9 36 2.29 9.70 1.425 0.650 0.600 BSC 1 1.625 0.850 REF. 0.090 82 56 6 0.024 6 9 7 30 3 3 41 3 3 5 1 4 BSC 398 0.064 33 REF. S T U/D2555NL U/D2555NL TO251 Tube/TO-252 Tape and Reel Data TO-251 Tube " A" TO-252 Carrier Tape UNIT: PACKAGE TO-252 (16 ) A0 6.80 ±0.1 B0 K0 10.3 ±0.1 2.50 ±0.1 D0 D1 E E1 E2 P0 P1 P2 T 2 1.5 + 0.1 - 0 16.0 0.3± 1.75 0.1± 7.5 ±0.15 8.0 ±0.1 4.0 ±0.1 2.0 ±0.15 0.3 ±0.05 TO-252 Reel S UNIT: TAPE SIZE 16 REEL SIZE M N W T H 330 330 ± 0.5 97 ± 1.0 17.0 + 1.5 - 0 2.2 13.0 + 0.5 - 0.2 7 K S 10.6 2.0 ±0.5 G R V