UPF21030 MRF21030 - Datasheet Archive

 

30W, 2.2 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Designed for DCS base station applications in the

 

UPF21030 UPF21030 30W, 2.2 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Designed for DCS base station applications in the frequency band 2.1 to 2.2 GHz. Rated with a minimum output power of 30W, it is ideal for W-CDMA, CDMA, TDMA, GSM, and Multi-Carrier Power Amplifiers in Class A or AB operation. · · · · · · · · Typical W-CDMA Performance: 2140 MHz, 28 Volts W - CDMA: 5MHz Offset @ 4.096 MHz BW, 15 DTCH Output Power ­ 3.0 W Drain Efficiency ­ 15 % Power Gain ­ 11.5 dB All GOLD metal system for highest reliability Industry standard package Suggested replacement for MRF21030 MRF21030 Package Type - Flange Internally matched for repeatable manufacturing High gain, high efficiency and high linearity 10:1 load mismatch tolerant, 30 Watts, 2.11 GHz, 28 Vdc Package Type - Pill Maximum Ratings Rating Symbol Drain to Source Voltage, gate connected to source Gate to Source Voltage Total Device Dissipation @ Tcase = 70oC Derate above 70oC Storage Temperature Range Operating Junction Temperature BVdss BVgss Pd Tstg Tj Value Unit 65 +/- 20 65 0.5 -65 to +150 200 Volts Volts Watts W/oC o C o C Thermal Characteristics Characteristics Symbol jc Thermal Resistance, Junction to Case Maximum Unit o 2.0 C/W Electrical DC Characteristics (Tc=25C unless otherwise specified) Rating Drain to Source Voltage, gate connected to source (Vgs=0, Ids=1mA) Drain to Source Leakage current (Vds=28V, Vgs=0) Gate to Source Leakage current (Vgs=20V, Vds=0) Threshold Voltage (Vds=10V, Ids=1mA) Gate Quiescent Voltage (Vds=26 V, Ids=270mA) Drain to Source On Voltage (Vgs=10V, Ids=1A Forward Transconductance (Vds=10V, Id=5A) Symbol Min Typ Max Unit BVdss 65 - - Volts Idss - - 2.0 mA Igss - - 2.0 µA Vth - 3.0 - Volts Vgs(on) 3.0 4.0 5.0 Volts Vds(on) - 0.14 0.25 Volts Gm 2.2 3.0 - S AC Characteristics (Tc=25C unless otherwise specified) Rating Output capacitance * (Vds= 26V, Vgs=0V, freq= 1MHz) Feedback capacitance * (Vds=26V, Vgs=0V, freq= 1MHz * for reference only Symbol Min Typ Max Unit Coss - 26 - pF Crss - 2.0 - pF RF and Functional Tests (Tc=25C unless otherwise specified, UltraRF Test Fixture) Rating Two-Tone Common Source Amplifier Power Gain VDD=26V, IDQ=270mA, Pout = 30 W PEP f =2110 MHz and 2170 MHz, Tone Spacing = 100kHz Two Tone Drain Efficiency VDD =26V, Pout = 30 W PEP, IDQ=270mA f =2110 MHz and 2170 MHz, Tone Spacing = 100kHz Pout, 1dB Compression Point VDD=26V, Pout = 30 W CW, f = 2170 MHz Input Return Loss VDD =26V, Pout = 30 W PEP, IDQ=270mA f =2110 MHz and 2170 MHz, Tone Spacing = 100kHz Load Mismatch Tolerance (Vds=26V, Idq=270mA, Pout=30W, f=2170 MHz) Symbol Min Typ Max Unit Gps 10 11.0 _ dB 31 34 _ % P1dB 30 IRL - -10 VSWR 10:1 _ dB _ CAUTION - MOS Devices are susceptible to damage from ElectroStatic Discharge (ESD). Appropriate precautions in handling, packaging and testing MOS devices must be observed.