2002/95/EC UP04387 UNR1119 UNR1213 SJJ00300AED

Composite Transistors UP04387 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For digital

This product complies with the RoHS Directive (EU 2002/95/EC 2002/95/EC). Composite Transistors UP04387 UP04387 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For digital circuits M Di ain sc te on na tin nc ue e/ d Collector current Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) V VCEO 50 V 100 mA VCBO -50 V VCEO -50 V IC 125 °C -55 to +125 °C 1.60±0.05 (0.20) Internal Connection (C1) 6 R1 1 k (B2) 5 Tr1 (E2) 4 R2 10 k R2 47 k 2 (B1) Tr2 R1 47 k 3 (C2) Pl ea co is /D ce M ai nt en an 4: Emitter (Tr2) 5: Base (Tr2) 6: Collector (Tr1) SSMini6-F1 Package Marking Symbol: IT 1 (E1) nt in Storage temperature mW 1: Emitter (Tr1) 2: Base (Tr1) 3: Collector (Tr2) JEDEC: SOD-723 mA 125 Tj Junction temperature -100 PT Tstg Collector current Total power dissipation 0.55±0.05 Unit 50 IC Collector-emitter voltage (Base open) Rating VCBO 0.10 max. Symbol Collector-base voltage (Emitter open) Publication date: August 2004 5° 0 to 0.02 Parameter Overall 2 3 (0.50)(0.50) 1.00±0.05 1.60±0.05 5° Absolute Maximum Ratings Ta = 25°C Tr2 1 Display at No.1 lead · UNR1119 UNR1119 + UNR1213 UNR1213 Tr1 4 (0.20) · Two elements incorporated into one package (Transistors with built-in resistor) · Reduction of the mounting area and assembly cost by one half Basic Part Number 0.10±0.02 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low tp in o co n an in :// g nt n ce c g pa U in tin t e fo na RL ue ue ype typ ur so a d t d e Pr od ty ni bo yp p c. u e e uc ne t l d tl ife t/s ate cy c/ st en in cl e fo st rm ag at e. io n. Features 5 1.20±0.05 6 Unit: mm 0.20+0.05 0.02 (0.30) SJJ00300AED SJJ00300AED 1 This product complies with the RoHS Directive (EU 2002/95/EC 2002/95/EC). UP04387 UP04387 Electrical Characteristics Ta = 25°C ± 3°C · Tr1 Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 50 Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, IE = 0 Collector-emitter cutoff current (Base open) ICEO VCE = 50 V, IB = 0 0.5 µA Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 0 0.1 mA hFE VCE = 10 V, IC = 5 mA Forward current transfer ratio Collector-emitter saturation voltage VCE(sat) Conditions Min Typ VOH VCC = 5 V, VB = 0.5 V, RL = 1 k Output voltage low-level VOL Unit V V 0.1 µA 80 IC = 10 mA, IB = 0.3 mA Output voltage high-level Max 0.25 VCC = 5 V, VB = 3.5 V, RL = 1 k 4.9 V V 0.2 V Input resistance R1 -30% 47 +30% k Resistance ratio R1 / R 2 0.8 1.0 1.2 Transition frequency fT VCB = 10 V, IE = -2 mA, f = 200 MHz 150 MHz Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. · Tr2 Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = -10 µA, IE = 0 -50 Collector-emitter voltage (Base open) VCEO IC = -2 mA, IB = 0 -50 Collector-base cutoff current (Emitter open) ICBO VCB = -50 V, IE = 0 - 0.1 Collector-emitter cutoff current (Base open) ICEO VCE = -50 V, IB = 0 - 0.5 µA Emitter-base cutoff current (Collector open) IEBO VEB = -6 V, IC = 0 -1.5 mA hFE VCE = -10 V, IC = -5 mA Forward current transfer ratio Collector-emitter saturation voltage VCE(sat) Conditions Min Typ VOH VCC = -5 V, VB = - 0.5 V, RL = 1 k Output voltage low-level VOL Unit V V µA 30 IC = -10 mA, IB = - 0.3 mA Output voltage high-level Max - 0.25 - 0.2 VCC = -5 V, VB = -2.5 V, RL = 1 k V V -4.9 V Input resistance R1 -30% 1 +30% k Resistance ratio R1 / R 2 0.08 0.10 0.12 Transition frequency fT VCB = -10 V, IE = 1 mA, f = 200 MHz 80 MHz Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Common characteristics chart PT Ta Total power dissipation PT (mW) 140 120 100 80 60 40 20 0 0 40 80 120 Ambient temperature Ta (°C) 2 SJJ00300AED SJJ00300AED This product complies with the RoHS Directive (EU 2002/95/EC 2002/95/EC). UP04387 UP04387 Characteristics charts of Tr1 0.9 mA 0.6 mA 0.5 mA 100 0.4 mA 80 0.3 mA 60 0.2 mA 40 0.1 mA 20 0 0 2 4 6 8 10 12 100 IC / IB = 10 10 1 Ta = 85°C 10-1 -25°C 10-2 25°C 10-3 0.1 1 1 20 200 -25°C 150 100 50 1 30 Collector-base voltage VCB (V) 40 1 0 2 4 6 8 Input voltage VIN (V) SJJ00300AED SJJ00300AED 10 100 VIN IO 100 VO = 5 V Ta = 25°C 10 0.1 10 25°C Collector current IC (mA) Input voltage VIN (V) f = 1 MHz Ta = 25°C 0 250 0 0.1 100 Ta = 85°C 300 IO VIN 100 Output current IO (mA) Collector output capacitance C (pF) (Common base, input open circuited) ob Cob VCB 0.1 10 VCE = 10 V Collector current IC (mA) Collector-emitter voltage VCE (V) 10 hFE IC 350 Forward current transfer ratio hFE IB = 1.0 mA Ta = 25°C 0.8 mA 0.7 mA 120 Collector current IC (mA) VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) IC VCE 140 10 VO = 0.2 V Ta = 25°C 10 1 0.1 1 10 100 Output current IO (mA) 3 This product complies with the RoHS Directive (EU 2002/95/EC 2002/95/EC). UP04387 UP04387 Characteristics charts of Tr2 Collector current IC (mA) -120 IB = -1.0 mA - 0.8 mA - 0.9 mA -100 - 0.7 mA - 0.6 mA -80 - 0.5 mA - 0.4 mA -60 - 0.3 mA -40 - 0.2 mA -20 - 0.1 mA 0 0 -2 -4 -6 -8 -10 -10 IC / IB = 10 -1 Ta = 85°C - 0.1 -25°C 25°C - 0.01 -1 -12 -10 1 -10 -20 -30 Collector-base voltage VCB (V) 4 -25°C 80 40 -1 -10 -40 -100 -10 -1 -1.0 -1.5 Input voltage VIN (V) SJJ00300AED SJJ00300AED -1 000 VIN IO -100 VO = -5 V Ta = 25°C - 0.1 - 0.5 -100 Collector current IC (mA) Input voltage VIN (V) f = 1 MHz Ta = 25°C 0 25°C 120 0 - 0.1 -100 Ta = 85°C 160 IO VIN -1 000 Output current IO (mA) Collector output capacitance C (pF) (Common base, input open circuited) ob Cob VCB 0.1 VCE = -10 V Collector current IC (mA) Collector-emitter voltage VCE (V) 10 hFE IC 200 Forward current transfer ratio hFE Ta = 25°C VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) IC VCE -140 -2.0 VO = - 0.2 V Ta = 25°C -10 -1 - 0.1 - 0.1 -1 -10 Output current IO (mA) -100 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. 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