2SA1037AK SC-88 SC-74 - Datasheet Archive

Transistors General Purpose Transistor (Isolated Dual Transistors) EMT1 / UMT1N / IMT1A External dimensions (Units : mm) Features

EMT1 / UMT1N / IMT1A Transistors General Purpose Transistor (Isolated Dual Transistors) EMT1 / UMT1N / IMT1A External dimensions (Units : mm) Features 1) Two 2SA1037AK 2SA1037AK chips in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. (3) (4) (5) (2) (1) 1.2 1.6 0.5 0.13 (6) 0.5 0.5 1.0 1.6 0.22 EMT1 Each lead has same dimensions Abbreviated symbol : T1 ROHM : EMT6 1.3 0.65 (1) 1.25 2.0 (3) (2) (4) (6) (5) 0.2 0.65 UMT1N Structure Epitaxial planar type PNP silicon transistor Each lead has same dimensions ROHM : UMT6 EIAJ : SC-88 SC-88 Tr1 Tr2 (5) (3) (6) (2) IMT1A (1) The following characteristics apply to both Tr1 and Tr2. (3) (4) (5) 0.3 (4) Abbreviated symbol : T1 1.6 0.3to0.6 Absolute maximum ratings (Ta = 25°C) Each lead has same dimensions Symbol Limits Unit Collector-base voltage VCBO -60 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -6 V -150 mA Parameter Collector current Collector EMT1, UMT1N power dissipation IMT1A IC PC 150 (TOTAL) mW 300 (TOTAL) Junction temperature Tj 150 °C Storage temperature Tstg -55~+150 °C 1 120mW per element must not be exceeded. 2 200mW per element must not be exceeded. 0to0.1 0.8 0.15 2.8 1.1 Tr1 (6) 0.95 0.95 1.9 2.9 (5) 0to0.1 0.1Min. (4) Tr2 0.7 0.15 IMT1A (1) (1) (2) (2) (3) (6) EMT1 / UMT1N 0.9 2.1 Equivalent circuit ROHM : SMT6 EIAJ : SC-74 SC-74 1 2 Abbreviated symbol : T1 EMT1 / UMT1N / IMT1A Transistors Electrical characteristics (Ta = 25°C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage BVCBO -60 - - V IC = -50µA Collector-emitter breakdown voltage BVCEO -50 - - V IC = -1mA Emitter-base breakdown voltage BVEBO -6 - - V IE = -50µA ICBO - - -0.1 µA VCB = -60V VEB = -7V Parameter Collector cutoff current Conditions IEBO Transition frequency Output capacitance - -0.1 µA - - -0.5 V IC/IB = -50mA/-5mA 120 - 560 - VCE = -6V, IC = -1mA fT DC current transfer ratio - - 140 - MHz Cob Collector-emitter saturation voltage VCE(sat) hFE Emitter cutoff current - 4 5 pF VCE = -12V, IE = 2mA, f = 100MHz VCB = -12V, IE = 0A, f = 1MHz Packaging specifications Package Taping Code TR T108 Basic ordering unit (pieces) 8000 3000 3000 - Type T2R - EMT1 UMT1N IMT1A - - - Electrical characteristic curves -5 -2 -1 -0.5 -0.2 -28.0 -24.5 -21.0 -6 -17.5 -14.0 -4 -10.5 -7.0 -2 -3.5µA Ta = 25°C -500 -450 -400 -350 -300 -80 -250 -60 -200 -150 -40 -100 -20 -50µA IB = 0 -0.4 -0.8 -1.2 -1.6 Ta = 100°C DC CURRENT GAIN : hFE 25°C 100 -40°C 200 100 50 50 VCE = -6V -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current ( ) -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 COLLECTOR CURRENT : IC (mA) Fig.5 DC current gain vs. collector current ( ) -1 -2 -3 -4 -5 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.3 Grounded emitter output characteristics ( ) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 500 200 0 Fig.2 Grounded emitter output characteristics ( ) VCE = -5V -3V -1V Ta = 25°C IB = 0 -2.0 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter propagation characteristics DC CURRENT GAIN : hFE -100 -31.5 -8 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 BASE TO EMITTER VOLTAGE : VBE (V) 500 -35.0 Ta = 25°C COLLECTOR CURRENT : IC (mA) -10 -0.1 -10 VCE = -6V Ta = 100°C 25°C -20 -40°C COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : Ic (mA) -50 -1 Ta = 25°C -0.5 -0.2 IC/IB = 50 20 -0.1 10 -0.05 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 COLLECTOR CURRENT : IC (mA) Fig.6 Collector-emitter saturation voltage vs. collector current ( ) EMT1 / UMT1N / IMT1A lC/lB = 10 -0.5 -0.2 Ta = 100°C 25°C -40°C -0.1 -0.05 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 COLLECTOR CURRENT : IC (mA) Fig.7 Collector-emitter saturation voltage vs. collector current ( ) Ta = 25°C VCE = -12V 500 200 100 50 0.5 1 2 5 10 20 50 EMITTER CURRENT : IE (mA) Fig.8 Gain bandwidth product vs. emitter current 100 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) 1000 -1 TRANSITION FREQUENCY : fT (MHz) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Transistors 20 Ta = 25°C f = 1MHz IE = 0A IC = 0A Cib 10 Co b 5 2 -0.5 -1 -2 -5 -10 -20 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.9 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage