EMN11/EMP11/FMN1/FMP1/IMN10/IMN11/IMP11 UMN1N/UMP1N/UMN11N/UMP11N EMN11 EMP11 - Datasheet Archive

 

EMN11/EMP11/FMN1/FMP1/IMN10/IMN11/IMP11 UMN1N/UMP1N/UMN11N/UMP11N Switching diode EMN11 / EMP11 / FMN1 / FMP1 / IMN10 / IMN11 /

 

Diodes EMN11/EMP11/FMN1/FMP1/IMN10/IMN11/IMP11 EMN11/EMP11/FMN1/FMP1/IMN10/IMN11/IMP11 UMN1N/UMP1N/UMN11N/UMP11N UMN1N/UMP1N/UMN11N/UMP11N Switching diode EMN11 EMN11 / EMP11 EMP11 / FMN1 / FMP1 / IMN10 IMN10 / IMN11 IMN11 / IMP11 IMP11 / UMN1N / UMP1N / UMN11N UMN11N / UMP11N UMP11N !External dimensions (Unit : mm) UMN1N / UMP1N 2.9±0.2 2.0±0.2 +0.1 0.2 -0.05 00.1 0.15±0.05 2.8±0.2 +0.2 0.8±0.1 0.95 0.95 0.1Min. 1.25±0.1 0.7 2.1±0.1 0.9±0.1 0.65 0.65 +0.2 -0.1 1.1 1.9±0.2 1.3±0.1 +0.1 00.1 0.15 0.3 -0.05 +0.1 -0.06 (All leads have the same dimensions.) 0.30.6 !Features 1) A wide variety of configurations are available. (EMD6, UMD5, UMD6, SMD5, SMD6) 2) Multiple diodes in one small surface mount package. 3) Diode characteristics are matched in the package. FMN1 / FMP1 1.6 -0.1 !Application Ultra high speed switching (All leads have the same dimensions.) Marking UMN1N : N1 UMP1N : P1 ROHM : UMD5 EIAJ : SC-88A SC-88A JEDEC : SOT-353 Marking FMN1 : N1 FMP1 : P1 ROHM : SMD5 EIAJ : SC-74A SC-74A JEDEC : - !Construction Silicon epitaxial planar UMN11N UMN11N / UMP11N UMP11N IMN10 IMN10 / IMN11 IMN11 / IMP11 IMP11 2.9±0.2 1.1 0.7 +0.1 0.2 -0.05 Marking EMN11 EMN11 : N11 EMP11 EMP11 : P11 0.15±0.05 (All leads have the same dimensions.) ROHM : UMD6 EIAJ : SC-88 SC-88 JEDEC : SOT-363 Marking UMN11N UMN11N : N11 UMP11N UMP11N : P11 +0.2 00.1 2.8±0.2 0.13±0.05 (All leads have the same dimensions.) ROHM : EMD6 EIAJ :- JEDEC :- 0.65 0.65 1.6 -0.1 00.1 +0.2 -0.1 0.8±0.1 0.95 0.95 0.1Min. (6) 0.22±0.05 0.5±0.05 1.25±0.1 (5) (1) 0.9±0.1 2.1±0.1 (4) (2) 1.6±0.1 0.50.5 (3) 0.2±0.1 1.2±0.1 0.2±0.1 1.9±0.2 1.6±0.1 1.0±0.1 2.0±0.2 1.3±0.1 +0.1 0.3 -0.05 00.1 0.15 +0.1 -0.06 (All leads have the same dimensions.) ROHM : SMD6 EIAJ : SC-74 SC-74 JEDEC : SOT-457 0.30.6 EMN11/ EMN11/ EMP11 EMP11 Marking IMN10 IMN10 : N10 IMN11 IMN11 : N11 IMP11 IMP11 : P11 1/3 EMN11/EMP11/FMN1/FMP1/IMN10/IMN11/IMP11 EMN11/EMP11/FMN1/FMP1/IMN10/IMN11/IMP11 UMN1N/UMP1N/UMN11N/UMP11N UMN1N/UMP1N/UMN11N/UMP11N Diodes !Circuits IMP11 IMP11 UMP11N UMP11N EMP11 EMP11 IMN11 IMN11 UHN11N UHN11N EMN11 EMN11 IMN10 IMN10 SMD5 / SMD6 Package FMP1 UMP1N FMN1 UMN1N !Absolute maximum ratings (Ta=25°C) Power Surge Storage Junction dissipation current temperature temperature (1µs) (TOTAL) Tstg (°C) Tj (°C) Isurge (A) Pd (mW) Type Peak reverse voltage VRM (V) DC reverse voltage VR (V) Peak forward current IFM (mA) Mean rectifying current IO (mA) FMN1 UMN1N 80 80 80 25 0.25 150/80 150 -55 to +150 FMP1 UMP1N 80 80 80 25 0.25 150/80 150 -55 to +150 IMN10 IMN10 80 80 300 100 4 300 1 150 -55 to +150 IMN11 IMN11 UMN11N UMN11N EMN11 EMN11 80 80 300 100 4 150 2 150 -55 to +150 IMP11 IMP11 UMP11N UMP11N EMP11 EMP11 80 80 300 100 4 150 2 150 -55 to +150 1 Not to exceed 200mW per element. 2 Not to exceed 120mW per element. !Electrical characteristics (Ta=25°C) Forward voltage Type Reverse current Cond. IF (mA) IR (µA) Max. Cond. VF (V) Max. Capacitance between terminals CT (pF) Max. Cond. Reverse recovery time trr (ns) Max. Cond. VR (V) f (MHz) 3.5 6 1 4 6 5 70 3.5 6 1 4 6 5 VR (V) FMN1 UMN1N 0.9 5 0.1 70 FMP1 UMP1N 0.9 5 0.1 VR (V) IF (mA) IMN10 IMN10 1.2 100 0.1 70 3.5 6 1 4 6 5 IMN11 IMN11 UMN11N UMN11N EMN11 EMN11 1.2 100 0.1 70 3.5 6 1 4 6 5 IMP11 IMP11 UMP11N UMP11N EMP11 EMP11 1.2 100 0.1 70 3.5 6 1 4 6 5 2/3 EMN11/EMP11/FMN1/FMP1/IMN10/IMN11/IMP11 EMN11/EMP11/FMN1/FMP1/IMN10/IMN11/IMP11 UMN1N/UMP1N/UMN11N/UMP11N UMN1N/UMP1N/UMN11N/UMP11N Diodes !Electrical characteristic curves (Ta=25°C) 50 1 000 Ta=100°C 75 50 25 10 5 2 1 0.5 Ta=25°C 0.2 0 0 25 50 75 100 125 0.1 0 150 REVERSE CURRENT : IR (nA) 100 20 85°C 50°C 0°C -30°C FORWARD CURRENT : IF (mA) POWER DISSIPATION : Pd / PdMax. (%) 125 75°C 100 50°C 10 25°C 0°C 1.0 -25°C 0.1 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 10 20 30 40 50 AMBIENT TEMPERATURE : Ta (°C) FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V) Fig.1 Power reduction curve Fig.2 Forward characteristics (P Type) Fig.3 Reverse characteristics (P Type) Ta=100°C REVERSE CURRENT : IR (nA) 10 5 2 1 0.5 Ta=25°C 85°C 50°C 0°C -30°C 0.2 0.1 0 50°C 10 25°C 1 0°C -25°C 0.1 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 75°C 100 10 20 30 40 60 70 P Type N Type 0 0 80 2 10 4 6 8 10 12 14 16 REVERSE VOLTAGE : VR (V) Fig.6 Capacitance between terminals characteristics Fig.5 Reverse characteristics (N Type) Fig.4 Forward characteristics (N Type) 0.01µF D.U.T. Ta=25°C VR=6V 9 2 REVERSE VOLTAGE : VR (V) FORWARD VOLTAGE : VF (V) 8 5k 7 PULSE GENERATOR OUTPUT 50 6 50 SAMPLING OSCILLOSCOPE 5 4 pe P Ty 3 INPUT 2 N Type 1 0 0 1 2 3 4 5 6 7 8 9 10 FORWARD CURRENT : IF (mA) 100ns Fig.7 Reverse recovery time OUTPUT trr 0 IR REVERSE RECOVERY TIME : trr (ns) 50 Ta=25°C f=1MHz 4 0.1IR FORWARD CURRENT : IF (mA) 1000 20 CAPACITANCE BETWEEN TERMINALS : CT (pF) 50 Fig.8 Reverse recovery time (trr) measurement circuit 3/3