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UMB11NTN ROHM Semiconductor Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, UMT6, SC-88, 6 PIN visit Digikey Buy

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Part : UMB11NTN Supplier : ROHM Manufacturer : Avnet Stock : - Best Price : $0.0359 Price Each : $0.0443
Part : UMB11NTN Supplier : ROHM Manufacturer : Avnet Stock : - Best Price : €0.0286 Price Each : €0.0571
Part : UMB11NFHATN Supplier : ROHM Manufacturer : Newark element14 Stock : 2,505 Best Price : $0.0590 Price Each : $0.1060
Part : UMB11NTN Supplier : ROHM Manufacturer : Future Electronics Stock : - Best Price : $0.0370 Price Each : $0.0390
Part : UMB11NTN Supplier : ROHM Manufacturer : Chip1Stop Stock : 2,975 Best Price : $0.0504 Price Each : $0.0504
Part : UMB11NTN Supplier : ROHM Manufacturer : Chip1Stop Stock : 2,800 Best Price : $0.33 Price Each : $0.33
Part : UMB11NFHATN Supplier : ROHM Manufacturer : element14 Asia-Pacific Stock : 2,505 Best Price : $0.07 Price Each : $0.2260
Part : UMB11NTN Supplier : ROHM Manufacturer : element14 Asia-Pacific Stock : 290 Best Price : $0.07 Price Each : $0.1950
Part : UMB11NFHATN Supplier : ROHM Manufacturer : Farnell element14 Stock : 5,260 Best Price : £0.1080 Price Each : £1.01
Part : UMB11NTN Supplier : ROHM Manufacturer : Farnell element14 Stock : 290 Best Price : £0.0653 Price Each : £0.2870
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UMB11N Datasheet

Part Manufacturer Description PDF Type
UMB11N ROHM General purpose (dual digital transistors) Original
UMB11N ROHM General purpose (dual digital transistors) Original
UMB11N ROHM General purpose (dual digital transistors) Original
UMB11NTN ROHM Transistors (BJT) - Arrays, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS DUAL PNP UMT6 Original
UMB11NTN ROHM TRANS DIGITAL BJT PNP 100MA 6UMT6 T/R Original
UMB11NTR ROHM General Purpose (Dual Digital Transistors) Original

UMB11N

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: EMB11FHA / UMB11NFHA / IMB11AFRA EMB11 / UMB11N / IMB11A PNP -100mA -50V Complex Digital , Resistors, R1 = R2 = 10kW. (6) (5) (2) (5) (4) (3) UMB11NFHA UMB11N SOT-353 (SC , code EMB11 EMB11FHA EMT6 1616 T2R 180 8 8,000 B11 UMB11N UMB11NFHA UMT6 , / UMB11NFHA / EMB11 / UMB11N / IMB11A IMB11AFRA Data Sheet lAbsolute maximum ratings (Ta = 25°C) , Collector current Power dissipation EMB11FHA UMB11NFHA EMB11 / /UMB11N PD IMB11A IMB11AFRA ROHM
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AEC-Q101 DTA114E SC-107C SC-88 SC-74 R1120A

DTA114E

Abstract: EMB11 EMB11 / UMB11N / IMB11A Transistors General purpose (dual digital transistors) EMB11 / UMB11N , (4) UMB11N 0.65 Abbreviated symbol : B11 Structure Epitaxial planar type PNP silicon , , UMB11N Power dissipation IMB11A Pd Junction temperature Tj 150 °C Storage temperature , EMB11 / UMB11N R2=10k Each lead has same dimensions ROHM : UMT6 EIAJ : SC-88 Equivalent , DTr1 and DTr2. 1 2 EMB11 / UMB11N / IMB11A Transistors Electrical characteristics (Ta = 25
ROHM
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T148 transistor b11 100MH

INVERTER 10kW

Abstract: EMB11 / UMB11N / IMB11A PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in , ) (1) UMB11N SOT-353 (SC-88) lFeatures 1) Built-In Biasing Resistors, R1 = R2 = 10kW. 2) Two , circuit EMB11 / UMB11N OUT (6) IN (5) GND (4) OUT (4) IMB11A IN (5) GND (6) lApplication Inverter , specifications Part No. EMB11 UMB11N IMB11A Package EMT6 UMT6 SMT6 Package size (mm) 1616 2021 2928 Taping code , Rev.B EMB11 / UMB11N / IMB11A lAbsolute maximum ratings (Ta = 25°C)
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INVERTER 10kW

transistor marking TN SC-95

Abstract: UMB11N IMB11A Features · · · available in UMT6 (UM6) and SMT6 (IMD, SC-74) package package marking: UMB11N and IMB11A; B11 package contains two independent PNP digital transistors (DTA114EKA), each with , used for both Transistor, digital, dual, PNP, w ith 2 resistors Dimensions (Units : mm) UMB11N , UMB11N, IMB11A Transistor, digital, dual, with resistors, 6-pin package Absolute maximum ratings (Ta = 25 , dissipation UMB11N IMB11A mA Do not exceed 120 mW per element Do not exceed 200 mW per element °C D C Pd
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transistor marking TN SC-95 SC-70 SC-59

DTA114E

Abstract: EMB11 EMB11 / UMB11N / IMB11A Transistors General purpose (dual digital transistors) EMB11 / UMB11N , (4) UMB11N 0.65 Abbreviated symbol : B11 Structure Epitaxial planar type PNP silicon , IMB11A IMB11A (3) (2) (1) R1 R2 (6) EMB11 / UMB11N Symbol Limits VCC -50 V , IO -50 IC (Max.) -100 150 (TOTAL) V mA EMB11, UMB11N Power dissipation IMB11A , be exceeded. Rev.A 1/2 EMB11 / UMB11N / IMB11A Transistors Electrical characteristics (Ta
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T110

TRANSISTOR D 1902

Abstract: 1902 transistor °C) Parameter Supply voltage Input voltage Symbol Voc VlN ·External dimensions (Units: mm) UMB11N 1MB11A , dissipation UMB11N IMB11A lo Ic O W m .) -50 -100 150 (TOTAL) 300 (TOTAL) 150 -55~150 mA *1 *2 , Type UMB11N IMB11A Basic ordering unit (pieces) TN 3000 Taping T110 3000 - O _ 'w' OUTPUT
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TRANSISTOR D 1902 1902 transistor a114* transistor 08P1 UMB rohm 96-454-A114E 11N/IMB11A
Abstract: EMB11 / UMB11N / IMB11A PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in , ) UMB11N SOT-353 (SC-88) (6) (1) IMB11A SOT-457 (SC-74) lInner circuit EMB11 / UMB11N , EMT6 1616 T2R 180 8 8,000 B11 UMB11N UMT6 2021 TR 180 8 3,000 , (pcs) Marking 2012.06 - Rev.B Data Sheet EMB11 / UMB11N / IMB11A lAbsolute maximum ratings , to +150 °C Collector current Power dissipation EMB11 / UMB11N PD IMB11A Junction ROHM
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Abstract: EMB11 / UMB11N / IMB11A PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in , -107C) UMB11N SOT-353 (SC-88) SMT6 (4) lFeatures 1) Built-In Biasing Resistors, R1 = R2 = 10kW. (5 , Compliant. (2) (1) IMB11A SOT-457 (SC-74) lInner circuit EMB11 / UMB11N IMB11A OUT (6 , 180 8 8,000 B11 UMB11N UMT6 2021 TR 180 8 3,000 B11 IMB11A SMT6 , Rev.B Data Sheet EMB11 / UMB11N / IMB11A lAbsolute maximum ratings (Ta = 25° C) ROHM
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Abstract: EMB11 / UMB11N / IMB11A Transistors General purpose (dual digital transistors) EMB11 / UMB11N , ) (4) 0.65 1.3 0.65 0.8 1.1 0.95 0.95 1.9 2.9 0.7 0.9 (3) UMB11N 0.2 0.5 0.5 0.5 1.0 , EMB11 / UMB11N (3) (2) (1) R1 R2 DTr1 R1=10k R2=10k DTr2 R2 R1 (4) (5) DTr2 R2 R1 (3) (2 , Limits -50 -40 10 Output current EMB11, UMB11N Power dissipation IMB11A Junction temperature Storage , must not be exceeded. (3) (2) (1) (1) (2) 1/2 EMB11 / UMB11N / IMB11A ROHM
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sMT6

Abstract: R210K EMB11 / UMB11N / IMB11A Transistors General purpose (dual digital transistors) EMB11 / UMB11N , (4) UMB11N 0.65 Abbreviated symbol : B11 Structure Epitaxial planar type PNP silicon , IMB11A IMB11A (3) (2) (1) R1 R2 (6) EMB11 / UMB11N Symbol Limits VCC -50 V , IO -50 IC (Max.) -100 150 (TOTAL) V mA EMB11, UMB11N Power dissipation IMB11A , exceeded. 1/2 EMB11 / UMB11N / IMB11A Transistors Electrical characteristics (Ta = 25
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sMT6 R210K
Abstract: EMB11 / UMB11N / IMB11A Transistors General purpose (dual digital transistors) EMB11 / UMB11N , ) 0.65 1.3 0.65 0.8 1.1 0.95 0.95 1.9 2.9 0.7 0.9 (3) UMB11N 0.2 0.5 0.5 0.5 1.0 1.6 2.0 , EMB11 / UMB11N (3) (2) (1) R1 R2 DTr1 R1=10k R2=10k DTr2 R2 R1 (4) (5) DTr2 R2 R1 (3) (2 , Limits -50 -40 10 Output current EMB11, UMB11N Power dissipation IMB11A Junction temperature Storage , must not be exceeded. (3) (2) (1) (1) (2) 1/2 EMB11 / UMB11N / IMB11A ROHM
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UMB11N

Abstract: SPICE PARAMETER UMB11N by ROHM TR Div. * UMB11N DIGITAL PNP BJT model * Date: 2007/01/06 * BJT with resistors *C B E .SUBCKT UMB11N 1 2 3 R1 2 Base Rb 10k R2 Base 3 Re 10K Q1 1 Base 3 QDTA1 .MODEL Rb RES + R=1 .MODEL Re RES + R=1 .MODEL QDTA1 PNP + IS=20.000E-15 + BF=187.64 + VAF=10 + IKF=.21074 + ISE=20.000E-15 + NE=1.5456 + BR=13.699 + VAR=100 + IKR=1.2543 + ISC , =1.5000 .ENDS UMB11N -
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145E-12 937E-12 613E-12 00E-12 00E-9

transistor 513

Abstract: DTA114ES Transistors General purpose (dual digital transistors) UMB11N / IMB11A FFeatures 1) Two DTA114Es in a UMT or SMT package. 2) Mounting possible with UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half. FExternal dimensions (Units: mm) FStructure Epitaxial planar type PNP silicon transistor (Built-in , = 25_C) (96-454-A114E) 512 Transistors UMB11N / IMB11A FElectrical characteristics
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transistor 513 DTA114ES A114E transistor a114e Transistors General

a144* transistor

Abstract: a124* transistor transistors) UMB11N / IMB11A FFeatures 1) Two DTA114Es in a UMT or SMT package. 2) Mounting possible with , FElectrical characteristics (Ta = 25_C) UMB11N / IMB11A FPackaging specifications FElectrical
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a144* transistor a124* transistor C144* transistor C124* transistor transistor a41 C124E 94S-389-A41 94S-398-C41 FMG13 94S-849-A143T 94S-877-C143T IMT17

X I TRANSISTOR 6 PIN

Abstract: sMT6 IMB10A IMB11A IMH1A D T '- > -P ^ D T r, ^4 1 1.'5 J '6 UMB9N UM B10N UMB11N - f 3 . " '2
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X I TRANSISTOR 6 PIN DTA124EKA DTA144EKA DTA114YKA DTA123JKA DTC124EKA DTC114YKA

potential divider

Abstract: DTC343T IMB9A EMB10 UMB10N IMB10A Input resistor type EMB11 UMB11N IMB11A IMB16 UMB5NdividerIMB5A type , UMA7N UMA8N UMA9N UMA10N UMA11N UMA3N UMA4N UMA6N UMB1N UMB2N UMB9N UMB10N UMB11N UMB5N
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SC-89 SC-75A EMD12 UMD12N IMD14 IMD10A potential divider DTC343T UMT6 SC-88 UMD2N FMG5
Abstract: UMB4N UMB9N UMB10N UMB11N UMC2N UMC3N UMC4N UMC5N UMD2N UMD3N UMD6N 676 679 682 685 688 691 639 643 647 -
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2SA1036K 2SA1037AK 2SA1514K 2SA1576A 2SA1577 2SA1579
Abstract: h7 / T ransistors T M V 1 / -T I # v 7 UMB11N IMB11A · « ft C 2 fi < t f 'A o n '5 . K 5 - K r / H X / I s o l a t e d M i n i M o l d D e v i c e 1 / -t i P N P v U 3 > h · ? > ' > ' * £( f i i a r t i IZ 'C f) E p i t a x a lP l a n a r P N P S i l i c o n T r a n s i s t o r ( I n c l u d e s R e s i s t o r s ) · f W 5- $ K ' 7 ' l ' / ^ / I n v e r t e r D r i v e r · TFÜH/Dimensions (Unit : mm) UM B 11N r 2.0:0.21.3 -
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S34JS

B647

Abstract: DTA144EK IMB8A PNP Type UMB10N IMB10A IMB16 UMB11N IMB11A UMB9N IMB9A UMB1N IMB1A UMB2N IMB2A PNP Type UMB5N
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B647 DTA144EK DI-74 transistor marking B9 DTA114EK IMB17A
Abstract: ) Complementary NPN Types: DTC114E series 6) Complex transistors: EMB11/ UMB11N/ IMB11A/ ã''UMA9N/ FMA9A ï¼PNP ROHM
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DTA114EM DTA114EEB SC-105AA UMB11N/ DTA114EE DTA114EUB

jd 1803

Abstract: otc114 ofsorocket UM6 \ UMB1N UMB2N UMB3N UMB4N UMB5N UMB6N UMB7N UMB8N UMB9N UMB10N UMB11N UMD2N UMD3N UMD6N , UMB7N UMB8N UMB9N UMB10N UMB11N UMD2N UMD3N UMD6N UMH1N UMH2N UMH3N UMH4N UMH5N UMH6N UMH7N UMH8N UMH9N
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2SC4619 2SC5072 DTA143YE 2SA1690 jd 1803 otc114 E2p 93 transistor B14A DTC143YKA MB8A 2SA1774 2SA1821 2SA1885 2SC4617 2SC4618

DTA114EX2

Abstract: DTC114EX2 IMB10A UMB11N IMB11A Bs Pin No I n n n UMB5N IMB5A 2 0 3 , Ü n n n UMB6N
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DTA114EX2 DTC114EX2 DTA114E DTC114E KIY transistors UMG10N UMG11N FMA10A FMA11A DTA124EX2 DTA144EX2
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