UGF19085 MRF19085 26VDC UGF19085F UGF19085P 18WAVG 48WAVG

85W, 1.9 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for PCS base station applications in the

UGF19085 UGF19085 85W, 1.9 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for PCS base station applications in the frequency band 1.93 to 1.99 GHz. Rated with a minimum output power of 85W. It is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier Power Amplifiers in Class AB operation. · · · · · · · ALL GOLD metal system for highest reliability · Integrated ESD Protection. · Industry standard package Suggested alternative to the MRF19085 MRF19085 Internally matched for repeatable manufacturing High gain, high efficiency and high linearity Maximum gain and insertion phase flatness. Output load VSWR tolerance 10:1 all phase angles at 26VDC 26VDC, 1930MHz, 85W (CW) output power. Package Type 440171 PN: UGF19085F UGF19085F Typical EDGE Performance VDD = 26V, IDQ = 850mA at 1960MHz · · · · · · Output Power 48 Watts Average Power Gain 12.5 dB Drain Efficiency 26% ACPR -61.5dBc (30kHz BW offset ± 400kHz normalized to total power in a 30kHz BW) ACPR -72.5dBc (30kHz BW offset ± 600kHz normalized to total power in a 30kHz BW) RMS EVM < 3.5% Package Type 440133 PN: UGF19085P UGF19085P Page 1 of 7 UGF19085 UGF19085 Rev. A Specifications subject to change without notice http://www.cree.com/ UGF19085 UGF19085 Maximum Ratings Rating Drain to Source Voltage, Gate connected to Source Gate to Source Voltage Total Device Dissipation @ Tcase = 25oC Derate above 25oC Storage Temperature Range Operating Junction Temperature Symbol VDSS VGSS PD Tstg TJ Value 65 +15 to 0.5 291 1.67 -65 to +150 200 Unit Volts Volts Watts W/oC o C o C Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol Typical 0.6 JC Unit C/W o Electrical DC Characteristics (TC =25°C unless otherwise specified) Rating Drain to Source Breakdown Voltage (VGS=0, ID=1mA) Drain to Source Leakage current (VDS=26V, VGS=0) Gate to Source Leakage current (VGS=15V, VDS=0) Threshold Voltage (VDS=10V, ID=1mA) Gate Quiescent Voltage (VDS=26 V, ID=900mA) Drain to Source On Voltage (VGS=10V, ID=2A) Forward Transconductance (VDS=10V, ID=1A) Symbol Min Typ Max Unit BVDSS 65 - - Volts IDSS - - 1.0 mA IGSS - - 1.0 µA VGS(th) - 3.4 - Volts VGS(Q) 3.0 4.0 6.0 Volts VDS(on) - - 0.11 Volts Gm 3.2 - - S Symbol Min Typ Max Unit CISS - - - pF COSS - - - pF CRSS - - - pF AC Characteristics (TC =25°C unless otherwise specified) Rating Input Capacitance * (VDS=26V, VGS=0V, f = 1MHz) Output capacitance * (VDS= 26V, VGS=0V, f = 1MHz) Feedback capacitance * (VDS=26V, VGS=0V, f = 1MHz) * Part is internally matched on input. Page 2 of 7 UGF19085 UGF19085 Rev. A Specifications subject to change without notice http://www.cree.com/ UGF19085 UGF19085 RF and Functional Tests (Tc=25°C unless otherwise specified, Cree Microwave Broadband Fixture) Rating CW Small Signal Gain, Pout=15W VDD=26V, IDQ=850mA CW Power Gain, Pout = 85 W VDD=26V, IDQ=850mA CW Drain Efficiency, Pout = 85 W, f=1960 MHz, VDD=26V, IDQ=850mA Two-Tone Common-Source Amplifier Power Gain VDD=26V, IDQ=850mA, Pout = 85 W PEP f1 =1960 MHz and f2=1960.1 MHz Two-Tone Intermodulation Distortion VDD=26V, IDQ=850mA, Pout = 85 W PEP f1 =1960 MHz and f2=1960.1 MHz Two-Tone Drain Efficiency VDD=26V, IDQ=850mA, Pout = 85 W PEP f1 =1960 MHz and f2=1960.1 MHz Input Return Loss VDD =26V, Pout = 85 W CW, IDQ=850mA f1 =1930 MHz and 1990 MHz Load Mismatch Tolerance VDS=26V, IDQ= 850 mA, Pout=85W, f=1930 MHz Symbol Min Typ Max Unit GL 11.5 12.5 - dB GP 11 11.5 - dB D - 47 - % GTT 11.5 12 - dB IMD - -27 - dBc D2 - 36 - % IRL - - -10 dB VSWR* 10:1 - - Note (unless otherwise specified): 1. Source and load impedance shall be 50 ohms. *No degradation in device performance after test. CAUTION - MOS Devices are susceptible to damage from Electrostatic Discharge (ESD). Appropriate precautions in handling, packaging and testing MOS devices must be observed. Page 3 of 7 UGF19085 UGF19085 Rev. A Specifications subject to change without notice http://www.cree.com/ UGF19085 UGF19085 UGF19085 UGF19085 Two Carriers, N-CDMA Performance Pk/Avg = 10.5dB @ 0.01% Probability, 1.23MHz Channel BW, 2.5MHz Spacing. Conditions: Freq = 1960MHz, VDD = 26V, ID = 2.7A, Eff = 25.5%, IDQ = 850mA, RL = -15dB, POUT = 42.55dBm (18WAVG 18WAVG), GP = 12.9dB. Page 4 of 7 UGF19085 UGF19085 Rev. A Specifications subject to change without notice http://www.cree.com/ UGF19085 UGF19085 UGF19085 UGF19085 GSM w/ EDGE Performance EDGE EVM (Error Vector Magnitude) at 1960MHz at the center of the frequency band. Conditions: Freq = 1960MHz, VDD = 26V, Eff = 36% ID = 5.13A, POUT = 46.8dBm (48WAVG 48WAVG), GP = 12.5dB, IDQ = 850mA. UGF19085 UGF19085 GSM w/ EDGE Performance EDGE Output RF Spectrum P-GSM at 881MHz at the center of the frequency band. Conditions: Freq = 1960MHz, VDD = 26V, ID = 5.13A, POUT = 46.8dBm (48WAVG 48WAVG) GP = 12.5dB, RL = -15dB, Eff = 36%, IDQ = 850mA. Page 5 of 7 UGF19085 UGF19085 Rev. A Specifications subject to change without notice http://www.cree.com/ UGF19085 UGF19085 Product Dimensions UGF19085F UGF19085F -Package Number 440171 UGF19085P UGF19085P -Package Number 440133 Page 6 of 7 UGF19085 UGF19085 Rev. A Specifications subject to change without notice http://www.cree.com/ UGF19085 UGF19085 Disclaimer: Specifications are subject to change without notice. Cree Microwave, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree Microwave for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree Microwave. Cree Microwave makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. "Typical" parameters are the average values expected by Cree Microwave in large quantities and are provided for information purposes only. These values can and do vary in different applications, and actual performance can vary over time. All operating parameters should be validated by customer's technical experts for each application. Cree Microwave products are not designed, intended, or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death, or in applications for planning, construction, maintenance or direct operation of a nuclear facility. Cree Microwave is a trademark and Cree and the Cree logo are registered trademarks of Cree, Inc. Contact Information: Cree Microwave, Inc. 160 Gibraltar Court Sunnyvale, CA 94089-1319 Sheryle Henson (Cree Microwave-Marketing Manager) 408-962-7783 Tom Dekker (Cree Microwave-Sales Director) 919-313-5639 Page 7 of 7 UGF19085 UGF19085 Rev. A Specifications subject to change without notice http://www.cree.com/