U6032B ISO/TR7637-1 88/540/EEC 91/690/EEC D-74025 - Datasheet Archive

 

Automotive TOGGLE Switch Description The bipolar integrated circuit, U 6032 B, is designed as a TOGGLE switch. It controls an

 

U6032B U6032B Automotive TOGGLE Switch Description The bipolar integrated circuit, U 6032 B, is designed as a TOGGLE switch. It controls an electrical load, for example, fog lamp, high/ low beam or heated windows for automotive applications. It has a defined power-on status. Features D D D D D D D D Debounce time: 0.3 ms to 6 s RC oscillator determines switching characteristics Relay driver with Z-diode Debounced input for toggle switch Two debounced inputs: ON and OFF Load-dump protection RF interference protected Protection according to ISO/TR7637-1 ISO/TR7637-1 (VDE 0839) Ordering Information Extended Type Number U6032B U6032B U6032B U6032B­FP Package DIP8 SO8 Remarks Block Diagram C2 OSC 47 mF R2 6 Oscillator Vstab 7 VS C1 8 Stabilization Power-on reset Load-dump detection R1 510 W VBatt 1 GND Frequency divider 3 ON 2 4 OFF Debouncing Relay control output 5 TOGGLE 94 8925 Figure 1. Block diagram with external circuit TELEFUNKEN Semiconductors Rev. A2: 06-Feb-97 1 (8) U6032B U6032B Pin Configuration Pin 1 2 3 4 5 6 7 8 Symbol GND RELAY ON OFF TOGGLE OSC Vstab VS Function Reference point, ground Relay control output Switch-on input Switch-off input Toggle input RC oscillator input Stabilized voltage Supply voltage GND 1 8 VS RELAY 2 7 Vstab ON 3 6 OSC OFF 4 5 TOGGLE 94 8844 Figure 2. Pinning Functional Description Power Supply, Pin 8 For reasons of interference protection and surge immunity, the supply voltage (Pin 8) must be provided with an RC circuit as shown in figure 3. The dropping resistor, R1, limits the current in case of overvoltage, whereas C1 smoothes the supply voltage at Pin 8. Recommended values are: R1 = 510 W, C1 = 47 mF. VBatt 510 W R1 C2 VS = 5 V R2 8 However, it is possible to operate the integrated circuit with a 5 V supply, but it should be free of interference voltages. In this case, Pin 7 is connected to Pin 8 as shown in figure 4, and the R1C1 circuit is omitted. C2 C1 47 mF/ 16 V The integrated Z-diode (14 V) protects the supply voltage, VS, therefore, the operation of the IC is possible between 6 V and 16 V, supplied by VBatt. 7 6 5 R2 8 7 6 VBatt U6032B U6032B 1 2 3 U6032B U6032B 1 4 2 3 13309 Figure 3. Basic circuit for 12-V supply and oscillator 2 (8) 5 4 13310 Figure 4. Basic circuit for VS = 5 V TELEFUNKEN Semiconductors Rev. A2: 06-Feb-97 U6032B U6032B Oscillator, Pin 6 The oscillator frequency, f, is determined mainly by the R2C2-circuit. The resistance, R2, determines the charge time, and the integrated resistance (2 kW) is responsible for discharge time. For the stability of the oscillator frequency, it is recommended that the selected R2 value has to be much greater than the internal resistance (2 kW), because the temperature response and the tolerances of the integrated resistance are considerably greater than the external resistance value. The oscillator frequency, f, is calculated as follows: f 1 +t )t 1 2 @ @ C2 a1 and a2 are constants as such a1 = 0.833 and a2 = 1.551 when C2 = 470 pF to 10 nF a1 = 0.746 and a2 = 1.284 when C2 = 10 nF to 4700 nF The debounce time, t3, and the delay time, td, depend on the oscillator frequency, f, as follows: td +6 1 f + 73728 Power-on Reset When the operating voltage is switched on, an internal power-on reset pulse (POR) is generated which sets the logic of the circuits to a defined initial condition. The relay output is disabled. Relay Control Output Behavior, Pin 2 Time functions (relay output) can be started or interrupted by the three inputs ON, OFF or TOGGLE (Pins 3, 4 and 5, input circuit of these pins see figure 6). where t1 = charge time = a1 R2 C2 t2 = discharge time = a2 2 kW t3 greater than 40 V in the case of load-dump. The output transistor is dimensioned so that it can withstand the current produced. 1 f Table 1 shows the relationship between t3, td, C2, R2 and frequencies from 1 Hz to 20 kHz. The relay becomes active if the time function is triggered, and the relay contact is interrupted after the elapse of delay time, td. There are two input possibilities. Toggle Input, Pin 5 When the push-button (TOGGLE) switch, S1, is pressed for the first time, the relay becomes active after the debounce time, t3, i.e., the relay output, Pin 2, is active. Renewed operation of S1 causes the interruption of the relay contact and the relay is disabled. Each operation of the toggle switch, S1, changes (alters) the condition of the relay output when the debounce time, td, is exceeded i.e., the TOGGLE function. If the relay output is not disabled by pressing the switch S1, the output is active. Relay Control Output The relay control output is an open-collector Darlington circuit with an integrated 23-V Z-diode for limitation the inductive cut-off pulse of the relay coil. The maximum static collector current must not exceed 300 mA and the saturation voltage is typically 1.1 V @ 200 mA. VBatt 510 W R1 C1 The relay control output is protected via the integrated 23-V Z-diode in the case of short interference peaks. It is switched to conductive condition for a battery voltage TELEFUNKEN Semiconductors Rev. A2: 06-Feb-97 20 kW R2 47 mF/ 16 V 8 Interference Voltages and Load-Dump The lC supply is protected by R1, C1, and an integrated Z-diode, while the inputs are protected by a series resistor, integrated Z-diode and RF capacitor (refer to figure 6). S1 C2 7 6 5 U 6032 B 1 2 3 4 94 8926 Figure 5. TOGGLE function 3 (8) U6032B U6032B ON, OFF Inputs, Pins 3 and 4 To avoid simultaneous operation of both inputs, Pin 3 (ON) and Pin 4 (OFF), the use of two-way contact with centre-off position with spring returns (also known as rocker-actuated switch) is recommended. S3 VBatt 510 W R1 Pressing the push-button switch (Pin 3 ON) leads to the activation of the relay after the debounce time, t3, whereas the switching of the Pin 4 switch correspondingly leads to the relay being de-energized. If the relay is not de-energized by the push-button switch, the output remains active. C1 C2 R2 47 mF/ 16 V 8 6 7 20 kW 20 kW 5 U 6032 B Combined operation, "TOGGLE and ON/OFF" is not possible due to the fact that there is only one debouncing circuit. Debouncing functions on both sides i.e., whenever S1 is ON or OFF. 1 Figure 6 shows the input circuit of U 6032 B. It has an integrated pull-down resistor (20 kW), RF capacitor (15 pF) and Z-diode (7 V). It reacts to voltages greater than 2 V. The external protective resistor has a value of 20 kW and the push-button switch, S, is connected to the battery as shown in the diagram. 2 3 4 94 8927 Figure 7. ON/OFF function Contact current, I, is calculated as follows: I V ­V + R(+ 20 kW) I + Batt Z (12­7) V 20 kW where V Batt + 12 V, VZ +7 V [ 0.25 mA It can be increased by connecting a 5.6 kW resistor from the push-button switch to ground as shown in figure 8. S R Pin 3,4,5 5.6 kW 8 7 6 2 3 2 mA 5.6 kW 5 20 kW U 6032 B 1 2V VBatt VBatt 20 kW 4 ­ + 20 kW 94 8928 7V 15 pF 20 kW 94 8756 Figure 8. Increasing the contact current by parallel resistors Figure 6. Input circuit 4 (8) TELEFUNKEN Semiconductors Rev. A2: 06-Feb-97 U6032B U6032B Absolute Maximum Ratings Parameters Operating voltage, static, 5 min Ambient temperature range Storage temperature range Junction temperature Symbol VBatt Tamb Tstg Tj Value 24 ­40 to +125 ­55 to +125 150 Unit V °C °C °C Symbol TthJA TthJA Maximum 110 160 Unit K/W K/W Thermal Resistance Parameters Junction ambient DIP8 SO8 Electrical Characteristics VBatt =13.5 V, Tamb = 25°C, reference point ground, figure 1, unless otherwise specified Parameters Operating voltage 5 V supply Stabilized voltage Undervoltage threshold Supply current Internal Z-diode Relay control output Saturation voltage Leakage current Output current Output pulse current Load-dump pulse Internal Z-diode Oscillator input Internal discharge resistance Switching voltage Test Conditions / Pin R1 510 W t < 5 min t < 60 min Without R1, C1 figure 2b Pins 7 and 8 VBatt = 12 V Pin 7 Power on reset All pushbuttons open, Pin 8 I8 = 10 mA Pin 8 Pin 2 I2 = 200 mA I2 = 300 mA V2 = 14 V w Symbol VBatt Min 6 V8, V7 4.3 V7 VS IS VZ 5.0 3.0 Typ 13.5 V2 5.2 1.3 14 2 v Lower Upper V6 = 0 V Input current Switching times Debounce time Inputs ON, OFF, TOGGLE Pins 3, 4 and 5 Switching threshold voltage Internal Z-diode I3, 4, 5 = 10 mA Pull-down resistance V3,4,5 = 5 V TELEFUNKEN Semiconductors Rev. A2: 06-Feb-97 Unit 5.4 4.2 2.0 16 V V mA V 1.2 Ilkg I2 t 300 ms I2 I2 = 10 mA VZ f = 0.001 to 40 kHz, see table 1 Pin 6 V6 = 5 V R6 Max 16 24 18 6.0 V V V 1.5 100 300 mA mA 20 22 1.5 24 A V 1.6 2.0 2.4 kW V6L V6H ­I 6 0.9 2.8 1.1 3.1 1.4 3.5 1 mA t3 5 7 cycles V3,4,5 V3,4,5 R3,4,5 1.6 6.5 13 2.4 8.0 50 V V kW 2.0 7.1 20 V 5 (8) U6032B U6032B Table 1. Values for C2 and R2 for a given oscillator frequency and debounce time Frequency f Hz 1 2 3 4 5 6 7 8 9 10 20 30 40 50 60 70 80 90 100 200 300 400 500 600 6 (8) Debounce time t3 ms 6000 3000 2000 1500 1200 1000 857 750 667 600 300 200 150 120 100 86 75 67 60 30 20 15 12 10 C2 R2 Frequency f nF 4700 1000 1000 1000 1000 1000 1000 1000 1000 1000 100 100 100 100 100 100 100 100 100 10 10 10 10 10 kW 280 650 440 330 260 220 190 160 140 130 650 440 330 260 220 190 160 140 130 600 400 300 240 200 Hz 700 800 900 1000 2000 3000 4000 5000 6000 7000 8000 9000 10000 11000 12000 13000 14000 15000 16000 17000 18000 19000 20000 Debounce time t3 ms 9.00 8.00 7.00 6.00 3.00 2.00 1.50 1.20 1.00 0.86 0.75 0.67 0.60 0.55 0.50 0.46 0.43 0.40 0.38 0.35 0.33 0.32 0.30 C2 R2 nF 10 10 10 10 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 kW 170 150 130 120 600 400 300 240 200 170 150 130 120 110 99 91 85 79 74 70 66 62 59 TELEFUNKEN Semiconductors Rev. A2: 06-Feb-97 U6032B U6032B Package Information Package DIP8 Dimensions in mm 7.77 7.47 9.8 9.5 1.64 1.44 4.8 max 6.4 max 0.5 min 0.58 0.48 3.3 0.36 max 9.8 8.2 2.54 7.62 8 5 technical drawings according to DIN specifications 13021 1 4 Package SO8 Dimensions in mm 5.2 4.8 5.00 4.85 3.7 1.4 0.25 0.10 0.4 1.27 6.15 5.85 3.81 8 0.2 3.8 5 technical drawings according to DIN specifications 13034 8 TELEFUNKEN Semiconductors Rev. A2: 06-Feb-97 5 7 (8) U6032B U6032B Ozone Depleting Substances Policy Statement It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA) in the USA 3. Council Decision 88/540/EEC 88/540/EEC and 91/690/EEC 91/690/EEC Annex A, B and C ( transitional substances ) respectively. TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 8 (8) TELEFUNKEN Semiconductors Rev. A2: 06-Feb-97