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Triode m2lz47

Catalog Datasheet MFG & Type PDF Document Tags

M2LZ47

Abstract: thyristor M2LZ47 SM2LZ47 TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM2LZ47 AC POWER CONTROL APPLICATIONS z Repetitive Peak Off-State Voltage: VDRM = 800V z R.M.S. On-State Current: IT (RMS) = 2A z High Commutation (dv / dt): (dv / dt) c = 5V / s (Min.) z Isolation Voltage: VISOL = 1500V AC Unit: mm ABSOLUTE MAXIMUM RATINGS CHARACTERISTIC Repetitive Peak Off-State Voltage R.M.S. On-State Current (Full Sine , 1.5 10 10 10 2.0 10 58 V V mA °C / W V / s V / s mA V UNIT A MARKING M2LZ47 Part No. (or
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13-10H1A thyristor M2LZ47 m2lz Triode m2lz47

m2lz47

Abstract: thyristor M2LZ47 SM2LZ47 TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM2LZ47 AC POWER CONTROL APPLICATIONS z Repetitive Peak Off-State Voltage: VDRM = 800V z R.M.S. On-State Current: IT (RMS) = 2A z High Commutation (dv / dt): (dv / dt) c = 5V / µs (Min.) z Isolation Voltage: VISOL = 1500V AC Unit: mm ABSOLUTE MAXIMUM RATINGS CHARACTERISTIC Repetitive Peak Off-State Voltage R.M.S. On-State Current (Full Sine , 1.5 10 10 10 2.0 10 58 V V mA °C / W V / µs V / µs mA V UNIT µA MARKING M2LZ47 Part No
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TOSHIBA THYRISTOR 13-10H

m2lz47

Abstract: m2lz TO SHIBA TOSHIBA BI-DIRECTIONAL TRIODE THYRISTO R SILICON PLANAR TYPE SM2LZ47 SM2LZ47 A C POWER CONTRO L APPLICATIONS 10.3 M A X. Unit in mm 03.2 + 0.2 · · · · Repetitive Peak Off-State Voltage R.M.S. On-State Current High Commutation (dv/dt) Isolation Voltage v d r m = 8oov (dv / dt) c = 5V / /us (Min.) VlSOL= 1500V AC i T(RMS) = 2A 1.1 0.75 + 0.15 1.1 MAXIMUM , MARK T TYPE SM2LZ47 M2LZ47 L at Number Example c t- Month ^Starting from^ 8A : January 1998 ÛT) · 17oV
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10//S 961001EAA1 LB182

M2LZ47

Abstract: thyristor M2LZ47 TOSHIBA TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM2LZ47 AC POWER CONTROL APPLICATIONS SM2LZ47 Unit in mm 10.3 MAX. 03.2 ±0.2 · · · · Repetitive Peak Off-State Voltage R.M.S. On-State Current High Commutation (dv/dt) Isolation Voltage v DRM = 8(W v ! t (RM S)= 2A (dv / dt) c = 5V / /¿s (Min.) VlSOL -1500V AC 1 .1 0.75 + 0.15 1.1 MAXIMUM RATINGS CHARACTERISTIC , Year 1 SM2LZ47 MARK r M2LZ47 Example 8A : January 1998 8B : February 1998 8L : December 1998 O
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M2LZ47

Abstract: thyristor M2LZ47 SM2LZ47 TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM2LZ47 AC POWER CONTROL APPLICATIONS Unit: mm l Repetitive Peak Off-State Voltage : VDRM = 800V l R.M.S. On-State Current : IT (RMS) = 2A l High Commutation (dv / dt) : (dv / dt) c = 5V / µs (Min.) l Isolation Voltage : VISOL = 1500V AC MAXIMUM RATINGS CHARACTERISTIC Repetitive Peak Off-State Voltage R.M.S , SM2LZ47 M2LZ47 Example 8A : January 1998 8B : February 1998 8L : December 1998 *3 2
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SM2LZ47 equivalent BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR

M2LZ47

Abstract: SM2LZ47 SM2LZ47 TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM2LZ47 AC POWER CONTROL APPLICATIONS Unit: mm Repetitive Peak Off-State Voltage : VDRM = 800V R.M.S. On-State Current : IT (RMS) = 2A High Commutation (dv / dt) : (dv / dt) c = 5V / µs (Min.) Isolation Voltage : VISOL = 1500V AC MAXIMUM RATINGS CHARACTERISTIC Repetitive Peak Off-State Voltage R.M.S. On-State , SM2LZ47 M2LZ47 Example 8A : January 1998 8B : February 1998 8L : December 1998 *3 2
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m2lz47

Abstract: thyristor M2LZ47 SM2LZ47 TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM2LZ47 AC POWER CONTROL APPLICATIONS Unit: mm Repetitive Peak Off-State Voltage: VDRM = 800V R.M.S. On-State Current: IT (RMS) = 2A High Commutation (dv / dt): (dv / dt) c = 5V / µs (Min.) Isolation Voltage: VISOL = 1500V AC MAXIMUM RATINGS CHARACTERISTIC Repetitive Peak Off-State Voltage R.M.S. On-State Current (Full Sine , V / µs MARKING M2LZ47 Characteristics indicator Part No. (or abbreviation code) Lot No
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thyristor M2LZ47

Abstract: M2LZ47 TO SH IBA TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM2LZ47 AC POWER CONTROL APPLICATIONS SM2LZ47 10.3 M AX. · · · · Repetitive Peak Off-State Voltage R.M.S. On-State Current High Commutation (dv/dt) Isolation Voltage v d r m = 8o o v !t (RMS)= 2A (dv / dt) c = 5V / /¿s (Min.) VlSOL -1500V AC Æ2 3 \ Unit in mm 03.2 ± 0 .2 1.1 0.75 + 0.15 1.1 , Current Year I MARK r M2LZ47 Example 8A : January 1998 8B : February 1998 8L : December 1998 2000
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961001EA

M2LZ47

Abstract: TOSHIBA SM2LZ47 TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM2LZ47 AC PO W ER CONTROL APPLICATIONS U nit in mm 10.3MAX. â'¢ Repetitive Peak Off-State Voltage V dR M â'¢ R.M.S. On-State C urrent i T(RMS) = â'¢ High Commutation (dv / dt) (dv / dt) c = 5V / /¿s (Min.) â'¢ Isolation Voltage VisOL = 1500V AC 3.210.2 = 800V 2A , .iv iY SM2LZ47 M2LZ47 L ot Number [ M3 ' â'" Month ^Starting from^ ^Alphabet
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