NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: CMPTH10 CMPTH10 SURFACE MOUNT NPN SILICON RF TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTH10 CMPTH10 type is an NPN silicon RF transistor manufactured by the , amplifier and high output oscillator applications. MARKING CODE: C3E SOT-23 CASE MAXIMUM RATINGS , ) CMPTH10 CMPTH10 SURFACE MOUNT NPN SILICON RF TRANSISTOR SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter 3) Collector MARKING CODE: C3E R5 (3-February 2010) w w w. c e n t r a l s e m i ... | Original |
2 pages, |
marking code R5 sot23 MARKING CODE C3E CMPTH10 RF TRANSISTOR Transistor C3E CMPTH10 abstract |
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| Abstract: Central CMPTH10 CMPTH10 TM Semiconductor Corp. NPN SILICON RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTH10 CMPTH10 type is an NPN silicon RF transistor manufactured by the epitaxial planar , output oscillator applications. MARKING CODE: C3E SOT-23 CASE MAXIMUM RATINGS: (TA=25°C) SYMBOL VCBO , TRANSISTOR SOT-23 CASE- MECHANICAL OUTLINE LEAD CODE: 1) BASE 2) EMITTER 3) COLLECTOR MARKING CODE: C3E R4 (26-September 2002) ... | Original |
2 pages, |
marking code RB marking C3E Low Noise uhf transistor CMPTH10 Transistor C3E CMPTH10 abstract |
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| Abstract: Central TM Semiconductor Corp. CMPTH10 CMPTH10 NPN SILICON RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTH10 CMPTH10 type is an NPN silicon RF transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low noise UHF/VHF amplifier and high output oscillator applications. Marking code is C3E. SOT-23 CASE MAXIMUM RATINGS (TA=25oC) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Power Dissipation Operating and Storage ... | Original |
2 pages, |
rf amplifier 10mhz CMPTH10 uhf vhf amplifier RF POWER TRANSISTOR 100MHz CMPTH10 abstract |
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| Abstract: CMPTH10 CMPTH10 Central Semiconductor corp. NPN SILICON RF TRANSISTOR % SOT-23 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTH10 CMPTH10 type is an NPN silicon RF transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low noise UHF/VHF amplifier and high output oscillator applications. Marking code is C3E. MAXIMUM RATINGS (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Power Dissipation Operating and Storage Junction Temperature Thermal ... | OCR Scan |
2 pages, |
Transistor C3E transistor b35 sot-23 npn marking code cr MARKING CODE C3E CMPTH10 bo 913 uhf vhf amplifier marking code b35 CMPTH10 abstract |
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| Abstract: C3C + C3D + D C3E + C20 N40 N50 10 C17 18 JU5 R35 VCH R10 3 , VOUT3 C3A + C16 C3B + C3C + C3D + D C3E + C20 N40 VCH N50 10 3 , ,Q6,Q7,Q8,Q9,Q10 Transistor J1,J2,J3,J4 Scope Probe Terminal JP1,JP2,JP5 JU1,JU2,JU4,JU5 Jumper , VOUT3 C3A + C16 C3B + C3C + C3D + D C3E + C20 N40 VCH N50 10 3 , Short Capacitor 1 Open Transistor 2 2-Pos terminal Scope Probe 4 Terminal 2 Jumper 4 ... | Original |
15 pages, |
C27A R27 transistor capacitor 47MF 100v CERAMIC CAP rt IRU3146 C27B IRDC3146EVAL C28F ECJ2VF1E104Z Transistor C4E 6TPB330M panasonic high voltage ceramic cap r32 fb2 C28D-F IRDC3146EVAL abstract |
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| Abstract: Marking C3E Supplying Form · Embossed tape 8 mm wide · 1, 2, 3 pins face the perforation side of the , GHz 19.0 @ f = 0.9 GHz 23.0 6-pin super minimold C3E +7.0 @ f = 1.9 GHz 21.0 @ f = , 4 C3E 1 3 VCC PIN EXPLANATION Pin No. 1 2 3 5 4 6 Pin Name INPUT , 1 3 2 5 Power supply pin, which biases the internal input transistor. This pin should , The internal output transistor of this IC consumes 20 mA, to output medium power. To supply current ... | Original |
18 pages, |
Transistor C3E PC2771T marking C3E datasheet abstract |
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| Abstract: Package 6-pin super minimold Marking C3E Supplying Form · Embossed tape 8 mm wide · 1, 2, 3 pins , 4.0 +8.0 @ f = 0.9 GHz 19.0 @ f = 0.9 GHz 23.0 6-pin super minimold C3E +7.0 @ f = , 4 C3E 1 3 VCC PIN EXPLANATION Pin No. 1 2 3 5 4 6 Pin Name INPUT , 1 3 2 5 Power supply pin, which biases the internal input transistor. This pin should , The internal output transistor of this IC consumes 20 mA, to output medium power. To supply current ... | Original |
16 pages, |
PC2771T PC8181TB PC8181TB abstract |
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| Abstract: minimold 6-pin minimold 6-pin super minimold 6-pin super minimold C3E C2H C2A C1Z ICC (mA) 30.0 Package , transistors. 6 VCC 2.7 to 3.3 Â Power supply pin, which biases the internal input transistor , higher 100 MHz or higher 2.0 GHz or higher INDUCTOR FOR THE OUTPUT PIN The internal output transistor of this IC consumes 20 mA, to output medium power. To supply current for output transistor, connect , transistor with minimum voltage drop to output enable high level. In terms of AC, the inductor makes ... | Original |
15 pages, |
PC8182TB PC8182TB abstract |
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| Abstract: £ • v - h Silicon Power Transistor 2SC4554 2SC4554 N PN x (f £ * v yj^M y'j-1 > h -7 > y X ^ 2SC4554 2SC4554 ii, n u ^ ^t&ME^^Îg; K ì£ft £ ftfc -/N°r7- • h 7 > ^X X\ ^rôt^X >f 7f > ^Î-fSÎM^Tif ^ £ to & m OhpE ^ < fSVCE(sat)T"to hFE^800 (VCe = 2 V, le = 5 A) VcE(sao^0.12 V (le = 5 A, Ib = 0.05 A) oc-e o mmm, y > • -y ^ - y x-10 WfélU : mm) 10.0±0.3 0 3.2 ± 0.2 m s 5E fë ¥ it 3 v 9 9 • * nu ] (• , /t -J- » = - 25 C fc=25 °C3E 40 °C ... | OCR Scan |
6 pages, |
D1560 Transistor C3E 2SC4554 2SC4554 abstract |
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| Abstract: SD57120 SD57120 RF POWER TRANSISTORS The LdmoSTFAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs . EXCELLENT THERMAL STABILITY . COMMON SOURCE CONFIGURATION, PUSH-PULL â- Pout = 120 W with 13 dB gain @ 960 MHz . BeO FREE PACKAGE . INTERNAL INPUT MATCHING DESCRIPTION The SD57120 SD57120 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and , , C£7, SOQQÛpf CHIP CAP C3E, C33 220(uf, 5DV ELECTROLYTIC CAPACITOR 034, C35 5,6pf CHIP CAP BALUN1 ... | OCR Scan |
6 pages, |
XSD57120 SD57120 M252 20AWG SD57120 abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
| Over 1.1 million files (1986-2013): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer. |
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| 10 11 ID=LG L=1e-009 RES 11 12 ID=RGATE R=0.75 CAP 10 30 ID=CG C=3e-013 CAP 12 17 ID=CRSS C=7.5e =RGATEA R=0.75 CAP 100 30 ID=CGA C=3e-013 CAP 120 170 ID=CRSSA C=7.5e-012 CAP 120 140 ID=CISSA C=1.45e =0 IMAX=1e+006 & COMPAT=1 TRS2=0 TGS=0 TGS2=0 CD=0 ! Push Pull Transistor DEF5P 10 20 100 200 30 LR www.datasheetarchive.com/files/polyfet/awr/lr501.net |
Polyfet | 09/04/2007 | 3.21 Kb | NET | lr501.net |
| =LD L=1.02e-010 CAP 20 30 ID=CD C=3e-012 RES 16 17 ID=R_RC R=5 CAP 14 16 ID=C_RC C=1.365e-010 RES 17 200 ID=LDA L=1.02e-010 CAP 200 30 ID=CDA C=3e-012 RES 160 170 ID=R_RCA R=5 CAP 140 160 ID=C_RCA C=1 ! Push Pull Transistor DEF5P 10 20 100 200 30 SR706 SR706 SR706 SR706 ! G1 D1 G2 D2 GND www.datasheetarchive.com/files/polyfet/awr/sr706.net |
Polyfet | 09/04/2007 | 3.24 Kb | NET | sr706.net |
| .75 CAP 10 30 ID=CG C=3e-013 CAP 12 17 ID=CRSS C=7.5e-012 CAP 12 14 ID=CISS C=1.45e-010 IND 14 30 ID =0 IND 100 110 ID=LGA L=1e-009 RES 110 120 ID=RGATEA R=0.75 CAP 100 30 ID=CGA C=3e-013 CAP 120 =0 ! Push Pull Transistor DEF5P 10 20 100 200 30 LB501 LB501 LB501 LB501 ! G1 D1 G2 D2 GND www.datasheetarchive.com/files/polyfet/awr/lb501.net |
Polyfet | 16/04/2007 | 3.27 Kb | NET | lb501.net |
| , contrassegnato dalla sigla HGTP15N120C3 è ideale per l'uso in applicazioni di controllo del motore, dove (Insulated Gate Bipolar Transistor - transistor bipolare a gate isolato) Ultra Fast da 1200 V comprende SCR, transistor MOS, IGBT e MCT. Note sulla società Harris Semiconductor produce www.datasheetarchive.com/files/harris/whatsnew/fn4244/fn4244i.htm |
Harris | 15/08/1997 | 4.47 Kb | HTM | fn4244i.htm |
| 040b927796cd2c1f8a5e9b7c0d490c1b1b8ffe613a3963c # ####################################################################### # templates for vertical DMOS transistors : # # - # # Contains all parts of a vertical power transistor: # # template body www.datasheetarchive.com/download/56687051-145147ZC/bsp75n_sabermodel.zip (components_bsp75en.sin) |
Infineon | 23/09/2004 | 310.35 Kb | ZIP | bsp75n_sabermodel.zip |
| f36eaa6 # ####################################################################### # templates for vertical DMOS transistors : # # - # # Contains all parts of a vertical power transistor: # # template body www.datasheetarchive.com/download/74640357-145142ZC/sabermodel_tle6280.zip (add6280.sin) |
Infineon | 23/09/2004 | 937.56 Kb | ZIP | sabermodel_tle6280.zip |
| ) depends on two ACS parameters (V CL & I H ) and on the clamping duration: Equation C3: ( ) E x V not the only point to check to decide if the buffer circuit can be removed. Actually, the transistor . In addition, the triac gate-drive transistor and its associated resistors are also redundant because means that the supply voltage is held by M2, neglecting D1 drop voltage. This MOS transistor is thus in www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6791.htm |
STMicroelectronics | 20/10/2000 | 37.55 Kb | HTM | 6791.htm |
| ) depends on two ACS parameters (V CL & I H ) and on the clamping duration: Equation C3: ( ) E x V I x t t C L C L H Z C = - 1 2 0 1- Dissipated power evaluation. Vac Vcl I the only point to check to decide if the buffer circuit can be removed. Actually, the transistor . In addition, the triac gate-drive transistor and its associated resistors are also redundant because voltage is held by M2, neglecting D1 drop voltage. This MOS transistor is thus in a linear mode. Its www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6791-v1.htm |
STMicroelectronics | 25/05/2000 | 36.29 Kb | HTM | 6791-v1.htm |
| (d,g),V(d,s)} C_Cdg1a ox1a g {C1a} C_Cdg1b ox1b g {C1b} C_Cdg2 ox2 g {C2} C_Cdg3 ox3 g {C3} E ox3 g {C3} E_Eds d edep VALUE {U4(V(d,s),V(g,s)} C_Cds edep s {Cds0} E_Egs g ox0 * * INFINEON Power Transistors * * Level-1/2/3 PSPICE Library for OptiMOS p-Channel Transistors * * Version 010802 . * * * * This library contains models of the following INFINEON * * OptiMOS transistors www.datasheetarchive.com/files/spicemodels/misc/infineon_optimos_p.lib |
Spice Models | 22/06/2007 | 67.09 Kb | LIB | infineon_optimos_p.lib |
| f36eaa6 # ####################################################################### # templates for vertical DMOS transistors : # # - # # Contains all parts of a vertical power transistor: # # template body www.datasheetarchive.com/download/74640357-145142ZC/sabermodel_tle6280.zip (dmos_comp2.sin) |
Infineon | 23/09/2004 | 937.56 Kb | ZIP | sabermodel_tle6280.zip |