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Transistor 4733

Catalog Datasheet MFG & Type PDF Document Tags

Transistor 4733

Abstract: CD4059 4731 4733 HIGH-RELIABILITY HYBRID VOLTAGE-TO-FREQUENCY CONVERTERS FEATURES Power Supply , DESCRIPTION The 4731 and 4733 low-drift voltage-to-frequency (V-toF) converters produce output pulse trains , 4731 and 4733 are packaged in 24-pin hermetic metal packages. Standard devices are specified for 0°C to , VOLTAGE-TO-FREQUENCY CONVERTERS 4731 4733 PIN CONFIGURATION Pin No. 1 2 3 4 5 6 7 8 9 10 11 12 Designatlon NC , +Vcc NC NC NC NC NC NC NC \ ·ooooooooooo 1 4731/4733 24 12 NC NC Eos +V|NTRIM l|N -V|N +V|N
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Voltage-to-Frequency Converters

Abstract: CD4059 ^TELEDYNE COMPONENTS 4731 4733 HIGH-RELIABILITY HYBRID VOLTAGE-TO-FREQUENCY CONVERTERS , Zero-Offset Voltage Drift TTL, CMOS, HNIL Compatible Output GENERAL DESCRIPTION The 4731 and 4733 , linearity. Differential nonlinearity and dynamic range approach 20 bits. The 4731 and 4733 are packaged in , VOLTAGE-TO-FREQUENCY CONVERTERS 4731 4733 PIN CONFIGURATION Pin No. 1 2 3 4 5 6 7 8 9 10 11 12 Designation NC NC , NC ·ooo oooooooo 1 12 +Vcc NC NC NC NC NC NC NC 24 4731/4733 Eos +V|N TR IM l|N -V|N
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to-66 power transistor sockets

Abstract: ASTM-D-4066 R TI F I ED TRANSISTOR SOCKETS KITS 2 T Y CE 900 ISO I Q UAL · LABOR SAVING · EASY MOUNTING TO CHASSIS · BETTER THERMAL EFFICIENCY An improved, simpler, less costly method , and transistor are assembled without previous attachment to the chassis. Contacts are spaced .430 , . ITEM A B C CAT. NO. 4733 CAT. NO. 4706 4651 4608 DESCRIPTION 6-20 screws Mica , ) CAT. NO. 4606 NYLON POWER TRANSISTOR MOUNT FOR TO-3 CASES Barrier insulator, molded of type 6/6
Keystone Electronics
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transistor d 4515

Abstract: Transistor 4733 . Transistor is installed afterwards. Assembly and repairs are simplified since socket will stay in place without transistor mounted. Top molded boss or added bushing ensure the transistor leads will be isolated , Socket and transistor are assembled to chassis at same time, using the minimum amount of hardware. Top molded boss ensure the transistor leads will be isolated from the chassis. Various boss heights , TRANSISTOR SOCKETS & MOUNTING KITS VARIOUS MOLDED BOSS HEIGHTS MATERIAL: Base: Phenolic, Grade PBE, Type
Keystone Electronics
Original

Transistor 4733

Abstract: transistor D 4515 ) Collector Plate: Steel, Tin Plate TO-3 POWER TRANSISTOR SOCKET & MOUNTING KITS Socket and transistor , the transistor leads will be isolated from the chassis. Various boss heights available to accommodate different chassis thicknesses. Socket is installed onto chassis using eyelets or screws. Transistor is installed afterwards. Assembly and repairs are simplified since socket will stay in place without transistor mounted. Top molded boss or added bushing ensure the transistor leads will be isolated from the chassis
Keystone Electronics
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4606

Abstract: ASTM-D4066 R TI F I ED TRANSISTOR SOCKETS KITS 2 T Y CE 900 ISO I Q UAL · LABOR SAVING · EASY MOUNTING TO CHASSIS · BETTER THERMAL EFFICIENCY An improved, simpler, less costly method of semiconductor mounting. Avoid soldering directly to the semiconductor. Easier to service , and transistor are assembled without previous attachment to the chassis. Contacts are spaced .430 , . ITEM A B C CAT. NO. 4733 CAT. NO. 4706 4651 4608 DESCRIPTION 6-20 screws Mica
Keystone Electronics
Original
Abstract: TRANSISTOR SOCKETS KITS â'¢ LABOR SAVING â'¢ EASY MOUNTING TO CHASSIS â'¢ BETTER THERMAL EFFICIENCY An improved, simpler, less costly method of semiconductor mounting. Avoid soldering directly to , -3 CASE SOCKET ONLY The socket and transistor are assembled without previous attachment to the , NOT SUPPLIED CHASSIS v- c CAT. NO. 4733 Complete Mounting Kit (includes all ollhe above , ) NOT SUPPLIED NOT SUPPLIED CHASSIS CAT. NO. 4606 NYLON POWER TRANSISTOR MOUNT FOR TO -
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Transistor 4733

Abstract: J TRANSISTOR SOCKETS KITS â'¢ LABOR SAVING â'¢ EASY MOUNTING TO CHASSIS â'¢ BETTER THERMAL EFFICIENCY An improved, simpler, less costly method of semiconductor mounting. Avoid soldering directly to , MOUNTING FOR TO-3 CASE The socket and transistor are assembled without previous attachment to the chassis , Insulator Molded Socket QUANTITY 2 1 1 C CAT. NO. 4733 CAT. NO. 4737 Complete Mounting , POWER TRANSISTOR MOUNT FOR TO-3 CASES 2 holes Barrier insulator, molded of type 6/6 natural colored
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transistor p86

Abstract: TRANSISTOR 187 . Transistor is installed afterwards. Assembly and repairs are simplified since socket will stay in place without transistor mounted. Top molded boss or added bushing ensure the transistor leads will be isolated , Socket and transistor are assembled to chassis at same time, using the minimum amount of hardware. Top molded boss ensure the transistor leads will be isolated from the chassis. Various boss heights , TRANSISTOR SOCKETS & MOUNTING KITS VARIOUS MOLDED BOSS HEIGHTS MATERIAL: Base: Phenolic, Grade PBE, Type
Keystone Electronics
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2SC537

Abstract: 5541a Ordering number:EN5541Ã' N0.5541A // 2SC5375 NPN Epitaxial Planar Silicon Transistor VHF to UHF Band OSC, High-Frequency Amp Applications Features â'¢ High gain : I S21e I 2 = lOdB typ (f = 1GHz). â'¢ High cutoff frequency : fr = 5.2GHz typ. Absolute Maximum Eatings at Ta = 25°C unit Collector-to-Base Voltage Vcbo 20 y Collector-to-Emitter Voltage Vceo 10 V Emitter-to-Base Voltage Vebo 2 , 6.673 131.8 0.101 51.6 0.745 -42.0 400 0.621 -115.9 4.733 104.7 0.135 37.2 0.524 -59.1 600 0.576
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TA-0824 2SC537 5541a Transistor 4733 IC 7484 2059B N2996TS

10134

Abstract: capacitor siemens 4700 35 PTF 10134 100 Watts, 2.1­2.2 GHz GOLDMOS ® Field Effect Transistor Description · INTERNALLY MATCHED · Guaranteed Performance at 2.17 GHz, 28 V - Output Power = 100 Watts Min - Power Gain = 10 dB Typ · Full Gold Metallization · Excellent Thermal Stability · The PTF 10134 is an internally matched GOLDMOS FET intended for WCDMA applications from 2.1 to 2.2 GHz. It is , 4.733 0.97 6.700 0.96 8.667 0.95 -20 30 Temp. (°C) 3 80 130 e PTF
Ericsson
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BDS31314-6-452 10134 capacitor siemens 4700 35 transistor t 2180 P4525-ND PC56106-ND P220ECT-ND LL2012-F2N7S 35VDC

9435 GM

Abstract: TC1201 high performance field effect transistor housed in a plastic package with TC1201 PHEMT Chip. Its low , 4.41 -1.24 -7.63 -15.08 -23.34 -31.78 -39.88 -47.33 -54.30 -61.20 -66.78 -73.44 MAG
Transcom
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TC2201 9435 GM TRANSCOM TC1201 9435 72 6526 89 18 8244-27

BDS31314-6-452

Abstract: Transistor 4733 PTF 10134 100 Watts, 2.1­2.2 GHz GOLDMOS ® Field Effect Transistor Description · INTERNALLY MATCHED · Guaranteed Performance at 2.17 GHz, 28 V - Output Power = 100 Watts Min - Power Gain = 10 dB Typ · Full Gold Metallization · Excellent Thermal Stability · The PTF 10134 is an internally matched GOLDMOS FET intended for WCDMA applications from 2.1 to 2.2 GHz. It is , 4.733 0.97 6.700 0.96 8.667 0.95 -20 30 Temp. (°C) 3 80 130 e PTF
Ericsson
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1-877-GOLDMOS 1522-PTF

Transistor 4733

Abstract: TA-0824 Ordering number:EN5541A NPN Epitaxial Planar Silicon Transistor 2SC5375 VHF to UHF Band OSC, High-Frequency Amplifiers Applications Features Package Dimensions · High gain : S21e =10dB typ (f=1GHz). · High cutoff frequency : fT=5.2GHz typ. 2 unit:mm 2059B 0.15 0.2 0.425 [2SC5375] 0.3 3 2.1 0.425 1.250 0 to 0.1 1 2 0.65 0.65 0.3 0.6 0.9 2.0 1 : Base , ­70.7 6.673 131.8 0.101 51.6 0.745 ­42.0 400 0.621 ­115.9 4.733 104.7
SANYO Electric
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transistor kt 801

Transistor 4733

Abstract: BDS31314-6-452 PRE-RELEASE PTF 10134* 100 Watts, 2.1­2.2 GHz GOLDMOSTM Field Effect Transistor Description The PTF 10134 is an internally matched common source N­channel enhancement­mode lateral MOSFET intended for WCDMA applications from 2.1 to 2.2 GHz. It is rated at 100 watts power output. Nitride surface passivation and gold metallization ensure excellent device lifetime and reliability. · · · · · · · , Power Gain (dB) 11 1.01 1.00 0.800 0.99 2.767 0.98 4.733 0.97 6.700 0.96
Ericsson
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CGS C14 1301-PTF

si9114 temic

Abstract: Si9114DY current requirements. The high-voltage DMOS transistor allows the IC to interface directly to bus , 3. 15-W Forward Converter Schematic Preliminary 625 4733 QOlfllOB 361 â  P-36732â'"Rev. B (05/30
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si9114 temic Si9114DY 3CW4 pwm current source inverter schematic diagram welding inverter control Si9114 82S473S 9114DJ 9114DY

ITR06394

Abstract: ITR06395 2SC5375A Ordering number : ENA1088 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5375A VHF to UHF Band OSC, High-Frequency Amplifier Applications Features · · High gain : S21e2=10dB typ (f=1GHz). High cut-off frequency : fT=5.2GHz typ. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Symbol Conditions , -115.9 4.733 104.7 0.135 37.2 0.524 -59.1 600 0.576 -138.2 3.353 90.2
SANYO Electric
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ITR06394 ITR06395 ITR06396 ITR06397 ITR08172 a1088 A1088-6/6

ic ta 7699

Abstract: 15GN01N 15GN01N Ordering number : ENN7923 NPN Epitaxial Planar Silicon Transistor 15GN01N VHF to UHF Band High-frequency Switching, Highfrequency General-Purpose Amplifier Applications Features · · Small ON-resistance [Ron=2 (IB=3mA)]. Small output capacitance [Cob=1.3pF (VCB=10V)]. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit , -92.81 1.635 46.31 0.184 54.11 0.540 -47.33 800 0.058 -140.97 1.517
SANYO Electric
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ic ta 7699 ic 4588

transistor a1105

Abstract: tk 2838 15GN01NA Ordering number : ENA1105 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor VHF to UHF Band High-Frequency Switching, High-Frequency General-Purpose Amplifier Applications 15GN01NA Features · · Small ON-resistance [Ron=2 (IB=3mA)]. Small output capacitance [Cob=1.3pF (VCB=10V)]. Specifications Absolute Maximum Ratings at Ta=25°C Parameter , -92.81 1.635 46.31 0.184 54.11 0.540 -47.33 800 0.058 -140.97 1.517
SANYO Electric
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transistor a1105 tk 2838 a1105 5942 A1105-5/5

2SC5375

Abstract: ITR06394 Ordering number:ENN5541A NPN Epitaxial Planar Silicon Transistor 2SC5375 VHF to UHF Band OSC, High-Frequency Amplifiers Applications Features Package Dimensions S21e2=10dB · High gain : typ (f=1GHz). · High cutoff frequency : fT=5.2GHz typ. unit:mm 2059B 0.15 0.2 0.425 [2SC5375] 0.3 3 2.1 0.425 1.250 0 to 0.1 1 2 0.65 0.65 0.3 0.6 0.9 2.0 1 : Base , ­42.0 400 0.621 ­115.9 4.733 104.7 0.135 37.2 0.524 ­59.1 600 0.576
SANYO Electric
Original
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