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LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

Transistor a1488

Catalog Datasheet MFG & Type PDF Document Tags

stk403-090

Abstract: stk*403-090 Ordering number : EN*A1488 Thick-Film Hybrid IC STK433-070-E Overview 2-channel class AB , equipment. O2109HKIM No. A1488-1/11 STK433-070-E Specifications Absolute Maximum Ratings at Ta = 25 , Tstg ts VCC=±29V, RL=6, f=50Hz, PO=40W, 1-channel active Per power transistor Both the Tj max and Tc , No. A1488-2/11 STK433-070-E Package Dimensions unit:mm (typ) 47.0 41.2 (R1.8) 9.0 12.8 , 9 5 4 6 7 13 No. A1488-3/11 STK433-070-E Application Circuit Example STK433-070-E -PRE
SANYO Electric
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STK433-030-E stk403-090 stk*403-090 STK403-100 Transistor a1488 stk403 100 stk*403-100 STK433-100 STK433-200/-300 STK433-040-E STK433-060-E A1488-11/11

stk403-090

Abstract: stk*403-090 Ordering number : EN*A1488 Thick-Film Hybrid IC STK433-070-E 2-channel class AB audio , evaluate and test devices mounted in the customer' s products or equipment. O2109HKIM No. A1488-1/11 , resistance j-c Per power transistor 3.5 °C/W Junction temperature Tj max Both the Tj max , No. A1488-2/11 STK433-070-E Package Dimensions unit:mm (typ) 47.0 9.0 (R1.8) 1 15 , 14 Bias Circuit 1 2 SUB 10 9 5 4 6 7 13 No. A1488-3/11 STK433
SANYO Electric
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stk*433-060 stk*433-070 STK-403-090 STK433-070 stk*433-320 STK403 - 090

A1488

Abstract: Transistor a1488 Ordering number : EN*A1488 Thick-Film Hybrid IC STK433-070-E 2-channel class AB audio , customer' s products or equipment. O2109HKIM No. A1488-1/11 STK433-070-E Specifications Absolute , transistor 3.5 °C/W Junction temperature Tj max Both the Tj max and Tc max conditions must be , 10000μF No. A1488-2/11 STK433-070-E Package Dimensions unit:mm (typ) 47.0 9.0 (R1.8) 1 , - 15 14 Bias Circuit 1 2 SUB 10 9 5 4 6 7 13 No. A1488-3/11 STK433
SANYO Electric
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d2493

Abstract: c4468 Contents Transistor Selection Guide.2 Reliability.6 Temperature Derating in Safe Operating Area.9 Accessories.9 Switching Characteristics Test Circuit.10 Symbols and Term.10 A1186.11 A1215.12 A1216.13 A1262.14 A1294 , .18 A1488/A .19 A1492.20 A1493
Sanken Electric
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d2493 c4468 transistor D2562 B1649 c4381 c4467 c4131 A1295 A1303 A1386/A A1488/A A1494 A1567

D2641

Abstract: c4381 Contents Transistor Selection Guide.2 Reliability.6 Temperature Derating in Safe Operating Area.9 Accessories.9 Switching Characteristics Test Circuit.10 Symbols and Term.10 A1186.11 A1215.12 A1216.13 A1262.14 A1294 , .18 A1488/A .19 A1492.20 A1493
Sanken Electric
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D2641 transistor A114 C5239 b1686 c4517 C3284 A1568 A1667/8 A1673 A1693 A1694 A1695

c4381

Abstract: D2493 Contents Transistor Selection Guide .2 Reliability.6 Temperature Derating in Safe Operating Area.9 Accessories.9 Switching Characteristics Test Circuit.10 Symbols and Term.10 A1186.11 A1215.12 A1216.13 A1262.14 A1294 , .18 A1488/A .19 A1492.20 A1493
Sanken Electric
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B1258 c4467 a1694 C3519 c3852 C3834 d2494 C3856 A1725 A1726 A1746 A1859/A A1860 A1907

C4517

Abstract: c5287 Transistor Selection Guide s VCEO-IC 800 C3678 C4020 C4299 C4304 C4445 C4908 C5249 C4517 C4517A , A1488 B1257 C3179 C3851 D1796 A2042 C4024 A1568 B1351 B1352 C4065 50 C4495 40 2 3 4 5 6 7 8 , (A) 2 Transistor Selection Guide s Transistors for Switch Mode Power Supplies (for AC80 ­ , Transistor Selection Guide Transistors for Audio Amplifiers s Single Transistors q Single Emitter Part , Transistor Selection Guide s Darlington Transistors Part No. 2SB1686 2SD2642 2SB1659 2SD2589 2SB1685
Sanken Electric
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C4418 C5130 C4138 C3852A c5287 a1695 power transistor transistor c4381 A1216 C2922 C3679 C4300 C3680 C4301 C5002 C5003

c5287

Abstract: c4381 reproduced in whole or in part without prior written approval from Sanken. Contents Transistor , .16 A1303.17 A1386/A .18 A1488/A , Transistor Selection Guide s VCEO-IC 800 C3678 C4020 C4299 C4304 C4445 C4908 C5249 C4517 C4517A , A1488 B1257 C3179 C3851 D1796 50 C3834 C3835 C4153 A1186 B1560 B1588 C2837 D2390 , 25 Transistor Selection Guide s Transistors for Switch Mode Power Supplies (for AC80 ­ 130V
Sanken Electric
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transistor c3835 C4020 TO220 transistor c3856 npn C4130 transistor c5287 d2560 2SC1440 2SC2900 2SC1442 2SC3409 2SC3679 2SC1444
Abstract: '"55 to +125°C â'"62 to +150°C +125°C Thermal Characteristics1 θJC Active Transistor Power , '"152.2 â'"148.8 â'"150.3 â'"154.5 â'"159.8 â'"165.6 â'"172.5 â'"179.3 171.3 162.0 151.4 139.9 Teledyne Cougar
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MIL-HDBK-217E
Abstract: dBm â'"55 to +125°C â'"62 to +150°C +125°C Thermal Characteristics1 θJC Active Transistor , '"175.4 â'"171.7 â'"167.7 â'"164.4 â'"152.2 â'"148.8 â'"150.3 â'"154.5 â'"159.8 â'"165.6 â Agilent Technologies
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1000MH 5963-3240E 5963-2508E

Transistor a1488

Abstract: TRANSISTOR µPA861TD NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS , ) Q1: High-gain transistor fT = 12.0 GHz TYP., S21e2 = 9.0 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz Q2: Low phase distortion transistor suitable for 3 GHz or higher OSC applications fT = 20.0 , '24.8 â'46.4 â'64.8 â'81.8 â'96.9 â'109.5 â'120.9 â'131.4 â'140.5 â'148.8 â'155.7 â , '80.1 â'89.5 â'98.9 â'107.3 â'115.3 â'123.3 â'130.5 â'137.4 â'143.3 â'148.8 â'154.0 â
NEC
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PU10057EJ02V0DS
Abstract: TRANSISTOR µPA863TD NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS , ) Q1: Built-in high gain transistor fT = 12.0 GHz TYP., S21e2 = 9.0 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz Q2: Built-in low phase distortion transistor suited for OSC operation fT = 4.5 GHz , . (deg.) â'24.8 â'46.4 â'64.8 â'81.8 â'96.9 â'109.5 â'120.9 â'131.4 â'140.5 â'148.8 , '59.6 â'70.2 â'80.1 â'89.5 â'98.9 â'107.3 â'115.3 â'123.3 â'130.5 â'137.4 â'143.3 â'148.8 Renesas Electronics
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nec A1394

Abstract: developed or manufactured by or for Renesas Electronics. DATA SHEET NPN SILICON RF TRANSISTOR 2SC5436 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3 , '126.3 â'138.4 â'148.8 â'159.7 â'171.2 â'179.9 173.9 168.2 162.7 158.2 8.760 7.301 6.101
Renesas Electronics
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nec A1394 PU10104EJ01V0DS

nec a1010

Abstract: product developed or manufactured by or for Renesas Electronics. DATA SHEET SILICON TRANSISTOR 2SC5195 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES PACKAGE DRAWINGS , '"73.3 â'"97.6 â'"114.1 â'"128.3 â'"139.5 â'"148.8 â'"158.0 â'"163.6 â'"170.5 â'"177.1 177.9
Renesas Electronics
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nec a1010

A1668

Abstract: A1489 TRANSISTOR DATA SHEET NPN SILICON RF TRANSISTOR 2SC5677 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES â'¢ Low voltage operation, low phase distortion â'¢ Ideal for OSC applications â'¢ 3-pin lead-less minimold package ORDERING INFORMATION Part Number , '139.6 â'143.4 â'146.5 â'148.8 0.285 0.493 0.663 0.790 0.885 0.955 1.007 1.051 1.083 , '129.2 â'137.9 â'148.8 1.144 1.076 1.039 5.99 4.40 3.00 18 Data Sheet P15287EJ1V0DS
NEC
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A1668 A1489 TRANSISTOR Transistor a1244 A827 1307 2SC5677-T3 P15287EJ1V0DS0
Abstract: TRANSISTOR µPA860TD NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS , ) Q1: High-gain transistor fT = 12.0 GHz TYP., S21e2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz Q2: Low phase distortion transistor suitable for 3 GHz or higher OSC applications fT = 20.0 Renesas Electronics
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PU10067EJ01V0DS

c4468 power transistor equivalent

Abstract: c5287 equivalent transistor Specifications List by Part Number . 172 2-4 Transistor and MOS FET , A1488A C3851A D2014 60 C3852 A1488 B1257 C3851 D1796 50 A1694 A1908 C4467 C5100 , MT-200 (fixed at two points) MT-200 (fixed at two points) LAPT (Linear Amplified Power Transistor): Multi-Emitter Transistor for High-Frequency â Output Transistors with Temperature Compensating Function
Sanken Electric
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c4468 power transistor equivalent c5287 equivalent transistor c4381 power transistor equivalent SLA5096 c4131 equivalent transistor sla5212 SLA12P SLA15P

fgt313

Abstract: c5287 equivalent transistor Specifications List by Part Number . 168 2-4 Transistor and MOS FET Arrays , A1488 B1257 C3851 D1796 50 A1694 A1908 C4467 C5100 C4495 2 3 A1303 A1860 C3284
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fgt313 B1560 equivalent 2sk2079 FGT412 SLA4052 C4381 equivalent SLA21P
Abstract: TRANSISTOR µPA873TD NPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS) IN A 6-PIN LEAD-LESS MINIMOLD FEATURES â'¢ Built-in low phase distortion transistor suited for OSC applications fT = 4.5 GHz TYP , '109.4 â'127.4 â'139.8 â'148.8 â'156.4 â'162.3 â'167.2 â'171.4 â'174.9 â'178.4 179.1 Renesas Electronics
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PU10151EJ01V0DS

2SC5586 equivalent

Abstract: c5287 equivalent transistor Specifications List by Part Number . 158 2-3 Transistor and MOS FET Arrays , C3852A A1488A C3851A D2014 60 C3852 A1262 A1488 B1257 C3179 C3851 D1796 C4024 A1568 B1351 , 2-3 Transistor and MOS FET Arrays Specifications List by Part Number Part Number SDA05 SDC03 SDC04 , (SMA12Pin) SIP12 (SMA12Pin) SIP12 (SMA12Pin) SIP15 (SMA15Pin) 160 Transistors 2-3 Transistor and
Sanken Electric
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2SC5586 equivalent 2SK3003 equivalent D2141 equivalent D2045 STA491A 2SC4138 equivalent SMA15P
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