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Part Manufacturer Description Datasheet BUY
SN74AC11032DR Texas Instruments AC SERIES, QUAD 2-INPUT OR GATE, PDSO16 visit Texas Instruments
74AC11000DRG4 Texas Instruments AC SERIES, QUAD 2-INPUT NAND GATE, PDSO16, GREEN, PLASTIC, MS-012AC, SOIC-16 visit Texas Instruments
74AC11004DBR Texas Instruments AC SERIES, HEX 1-INPUT INVERT GATE, PDSO20, GREEN, PLASTIC, SSOP-20 visit Texas Instruments
74AC11008DE4 Texas Instruments Quadruple 2-Input Positive-AND Gates 16-SOIC -40 to 85 visit Texas Instruments
74AC11008PWRG4 Texas Instruments AC SERIES, QUAD 2-INPUT AND GATE, PDSO16, GREEN, PLASTIC, TSSOP-16 visit Texas Instruments
74AC11014DWR Texas Instruments Hex Inverters With Schmitt-Trigger 20-SOIC -40 to 85 visit Texas Instruments

Transistor No C110

Catalog Datasheet MFG & Type PDF Document Tags

transistor C110

Abstract: Transistor No C110 : Transistor, Normally Open or Normally Closed SUPPLY VOLTAGE HYSTERESIS 2-meter cable, PVC covered 4 , reflector H85 reflector 50mm-1m 50mm-1m 0-2m 0-2m Yes Yes No No GLV12-54/36 , ADJUSTMENT REFERENCE TARGET REFLECTOR DISTANCE POLARIZED FILTER MODEL NUMBER(S) OUTPUT: Transistor , . Sensing Range Movement Characteristics GLV12-54 Reflectors H85 C110-2 H60 H160 50 Offset Y , Distance X [m] Excess Gain vs. Sensing Range Offset Y [mm] Reflectors H85 C110-2 H60 H160
Pepperl+Fuchs
Original
GLV12 transistor C110 Transistor No C110 led receiver TRANSISTOR Y 330 H160 GLV12-8-200/36/40 GLV12-8-200/37/40 10-30VDC G12/GV12 BF5-30

G3N60B3

Abstract: Transistor No C110 have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor , °C. .'c25 7.0 A AtTc = 110°C. .>C110 3.5 A Collector , Collector to Emitter Saturation Voltage vce(sat) 'c = 'c110. VGE = 15V Tc = 25°C - 1.8 2.1 V Tc = 150 , - V On-State Gate Charge Qg(ON) 'c = 'c110. vCE = 0.5 BVces VGE = 15V - 18 22 nC VGE = 20V - 21 25 nC Current Turn-On Delay Time td(ON)l IGBT and Diode at Tj = 25°C lCE= 'c110 vCE = 0.8 BVces VGe
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HGTD3N60B3S HGT1S3N60B3S HGTP3N60B3 G3N60B3 HGTD3N60B3S9A tr c110 TA49192 G3N60B

um0670

Abstract: AN2928 capacitor C110 is not below 12.5 V during no brightness. Figure 42. Design improvement allowing zero , capacitor C110 . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 Improper startup without using diode D104 and capacitor C110 . . . . . . . . . . . . . . . . . . . . 33 Design improvement allowing , capacitor C110 and output bus voltage of 400 V . . . . . . . . . . . . . . . . . . . . . . . 35 Doc ID , external PWM generator can be used for LED brightness regulation. If no PWM generator is connected to the
STMicroelectronics
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STEVAL-ILL013V1 um0670 AN2928 L6562A L6562A LED um0670 80w N67 FERRITES UM0670

power supply driver led 80W schematic

Abstract: AN2928 V) the transistor is opened and charges C110 and C107. Therefore, it is possible to change the , evident that the supply voltage on capacitor C110 is not below 12.5 V during no brightness. Figure 42 , D104 and capacitor C110 . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 Improper startup without using diode D104 and capacitor C110 . . . . . . . . . . . . . . . . . . . . 32 Design improvement , capacitor C110 and output bus voltage of 400 V . . . . . . . . . . . . . . . . . . . . . . . 34 Doc ID
STMicroelectronics
Original
power supply driver led 80W schematic l6562A boost pfc led c112 230 VAC L78L33 U101 Diode Zener EVL6562A-TM-80W ID15327

G20N60B3D

Abstract: TA49016 impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state , 'C110. VGE = 15V Tc = 25°C - 1.8 2.0 V Tc = 150°C - 2.1 2.5 V Gate to Emitter Threshold Voltage , 600V 30 A Gate to Emitter Plateau Voltage vgep 'c = 'c110. vce = 0-5 BVCEs - 8.0 - V On-State Gate Charge qg(ON) 'c = 'C110. VCE = 0.5 BVces VGE=15V - 80 105 nC Vqe = 20V - 105 135 nC Current Turn-On Delay Time ^d(ON)l Tc = 150°C, 'ce = >c110 vCE = 0.8 BVces, Vge = 15V Rg = 10£i, L = 100nH - 25 - ns
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HGTG20N60B3D RHRP3060 TA49016 G20N60B3D G20N60B3 C110 LD26 IS09000

G12N60b3

Abstract: G12N60B impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state , VGEP 'C = >C110. VCE = 0 5 bvCES - 7.3 - V On-State Gate Charge Qg(ON) 'c = >C110. VCE = 0.5 BVCES , = 25°C 'CE = >C110 VCE = 0.8 BVCES Vge = 15V RG = 25Q L = 1 mH Test Circuit (Figure 17) - 26 - ns , UNITS Current Turn-On Delay Time td(ON)l IGBT and Diode at Tj = 150°C 'CE = >C110 VCE = 0.8 BVces Vge , tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This
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HGTP12N60B3 HGT1S12N60B3S HGT1S12N60B3S9A TB334 G12N60b3 G12N60B Bipolar HJ G12N60 TA49171 G12N60B3

cctv camera circuit diagram

Abstract: transistor digital C103 (15V) C111 C103 C110 VO3 (5V) C102 C109 C101 RBO VO1 (3.3V) C105 C108 , Component Description Type Value Composite type with a PNP transistor and schottky barrier , TANTALUM CAPACITOR 10uF/10V C110 Load capacitor for VHO TANTALUM CAPACITOR 10uF/20V C107 , Description Pin No. Name I/O Type 1 VO3 O A Voltage output for +5V general
ADTech
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ADT7210 cctv camera circuit diagram transistor digital C103 transistor c111 c103 TRANSISTOR C111 transistor ccd cctv camera circuit diagram 28MLF

c103 TRANSISTOR

Abstract: c103 mosfet TRANSISTOR adapters. This loss is incurred even when there is no load applied. The cause of this inefficiency is that , at no load. It won't restart until the output is loaded ( wake on load ) or the output capacitor is , line input during shutdown period. By doing so, the no load power consumption of this adapter can be , , R109, Q101 and D106. D106 is a 36V zener diode. It clamps the base voltage of NPN transistor Q101 at , 5V, I OC = 0.4 mA. This current is coupled to the transistor side of the optocoupler and pulls down
National Semiconductor
Original
RD-166 c103 mosfet TRANSISTOR Viper22 application PA2865NL PA2685NL AT-339 c103 TRANSISTOR equivalent LM5021 CSP-9-111C2 CSP-9-111S2

B560 transistor

Abstract: WL11-B560 Vss3) Power consumption 30 mA4) Switching outputs Transistor outputs Qp and Qn , Scanning range, max. typical Reflector type Operating range 1 2 PL80A C110 0 . 3.5 m 0 , 1 (m) 1 2 3 4 5 Order information Type Order No. WL11-B560 05-08-2006
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PL40A B560 transistor transistor b560 WL11- B560 b560 Reflective Tape WL11- PL50A PL30A PL20A

RLI-135

Abstract: transistor c114 disabled and no more energy is passed on secondary side. So, the output voltage is decreasing and the , primary winding of the transformer) and no audible noise is generated. In addition, the minimum turn on , ). It is built with R14, DZ14, Q1 and C12. Notice that the VCE0 of this transistor must be higher than 80 V. This transistor may also dissipate 0.7 W when input voltage is 250 VAC. The COMP pin , 100nF U2A PC817 C110 10uF/63V 6 R102 680 C111 100nF 8 4 GND Vref VCC
STMicroelectronics
Original
AN2067 RLI-135 transistor c114 viper 224 VIPER53 transistor c114 diagram VIPer53 Application Note

g30n60b3

Abstract: G30N60 transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT , - 3.0 mA Collector to Emitter Saturation Voltage VCE(SAT) 'c = >C110. VGE = 15V Tc = 25°C - 1.45 , Emitter Plateau Voltage VGEP â c = 'C110. VCE = 05 BVCES - 7.2 - V On-State Gate Charge Qg(ON) 'c = >C110. VCE = 0.5 BVces VGE = 15V - 170 190 nC Vge = 20V - 230 250 nC Current Turn-On Delay Time ^d(ON)l IGBT and Diode at Tj = 25°C 'CE = >C110 vCE = 0.8 BVces VGe = 15V RG= 3Q L = 1 mH Test Circuit
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HGTG30N60B3 TA49170 g30n60b3 G30N60 hgtp30n60b3d MOSFET 600v 60a G30N60B3
Abstract: loss of a bipolar transistor. File Number â'¢ 75A, 1200V, T C = 25°C â'¢ 1200V Switching SOA , Current Ic e s VCE(SAT) VGE(TH) iGES VCE = BVC e s !c = >C110. VGE = 15V lc = 250nA, V , 200|iH, = 1200V Gate to Em itter Plateau Voltage VGEP !c = >C110. V CE = 0 5 b v CES On-State Gate Charge QG(ON) 2 hjA.rtmS !C = >C110. Vc e = 0 5 b v c e s HGTG30N120CN , 26 ns - 220 260 ns - 180 240 ns - Ic e = >C110 VC e = 0.8 BV c e s -
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TA49281 TG30N120CN 30N120CN 1-800-4-HARRIS

hp laptop MOTHERBOARD pcb CIRCUIT diagram

Abstract: hp mini 110 laptop MOTHERBOARD pcb CIRCUIT diagram TravelMate C110 Service Guide Service guide files and updates are available on the CSD web; for more information, please refer to http://csd.acer.com.tw PART NO.: 49.46Z01.002 PRINTED IN TAIWAN Revision History Please refer to the table below for the updates made on Travelmate C110 service guide. Date Chapter Updates II TravelMate C110 Copyright Copyright © 2003 by Acer Incorporated. All rights reserved. No part of this publication may be reproduced, transmitted, transcribed
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hp laptop MOTHERBOARD pcb CIRCUIT diagram hp mini 110 laptop MOTHERBOARD pcb CIRCUIT diagram hp mini laptop MOTHERBOARD pcb CIRCUIT diagram digitizer wacom PA-1500-02 logitech c110

p12n60c3

Abstract: p12n60 bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150 , Vce = BVces Tc = 150°C - - 1.0 mA Collector to Emitter Saturation Voltage vce(sat) 'c = >C110. VGE = , Charge qg(ON) 'c = >C110. vCE = 0.5 BVces VGE=15V - 48 55 nC Vqe = 20V - 62 71 nC Current Turn-On Delay Time ^d(ON)l Tj = 150°C, 'ce = >C110, VcE(PK) - 0.8 BVces, Vqe = 15V, Rg = 25ÌÌ, L = 100nH - , were tested per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss
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HGTP12N60C3 HGT1S12N60C3S TA49123 S12N60C3 HGT1S12N60C3S9A p12n60c3 p12n60 P12N60C3 T0-220AB

G7N60C3

Abstract: g7n60c bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150 , Vce = BVces Tc = 150°c - - 2.0 mA Collector to Emitter Saturation Voltage VCE(SAT) 'c = >C110. vGE , ) 'c = >C110. vCE = 0.5 BVces vGE = 15V - 23 30 nC VGE = 20V - 30 38 nC 2 interrii HGTD7N60C3S , TEST CONDITIONS MIN TYP MAX UNITS Current Turn-On Delay Time ^d(ON)l tj = 150°C lCE= >C110 VCE(PK) = , ). The HGTD7N60C3S and HGTP7N60C3 were tested per JEDEC standard No. 24-1 Method for Measurement of
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TA49115 G7N60C3 HGTD7N60C3S9A g7n60c G7N60 RHRD660 TQ-220AB G7N60C

G3N60C

Abstract: C110 of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state , >C110. VGE = 15V Tc = 25°C - 1.65 2.0 V Tc = 150°C - 1.85 2.2 V Gate to Emitter Threshold Voltage , On-State Gate Charge Qg(ON) 'c = 'C110. vCE = 0.5 BVces VGE = 15V - 10.8 13.5 nC Vge = 20V - 13.8 17.3 nC Current Turn-On Delay Time td(ON)l Tj = 150°C 'CE = >C110 VCE(PK) = 08 bvCES Vge=15V Rg = 82Q L , HGTP3N60C3 and HGTD3N60C3S were tested per JEDEC standard No. 24-1 Method for Measurement of Power Device
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G3N60C HGTD3N60C3S9A TA49113

G30N60

Abstract: TA49053 impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state , 250 HA Tc = 150°C - - 3 mA Collector to Emitter Saturation Voltage vce(sat) 'c = 'C110. VGE , A Gate to Emitter Plateau Voltage vgep 'c = 'c110. vce = 05 bvces - 7.2 - V On-State Gate Charge qg(ON) 'c = >C110. vCE = 0.5 BVces Vqe= 15V - 170 190 nC Vqe = 20V - 230 250 nC Current Turn-On Delay Time ^d(ON)l IGBT and Diode at Tj = 25°C, 'ce = >c110. vce = 0.8 BVces. Vqe = 15V, Rq = 3ÌÌ, L
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HGTG30N60B3D TA49053 TA49172 G30N60B3D LG 631 LG 631 IC

relay 12v 1c/o

Abstract: 12V 1C/O relay have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor , = 150°C - - 5.0 mA Collector to Emitter Saturation Voltage vce(sat) 'c = >C110 VGE = 15V Tc = 25 , Emitter Plateau Voltage vgep 'ce = 'c110. vce = 0 5 bvces - 8.4 - V On-State Gate Charge qg(ON) lCE= 'c110 VCE = 0.5 BVCES VGE = 15V - 91 110 nC VGE = 20V - 122 145 nC Current Turn-On Delay Time td(ON)l IGBT and Diode at Tj = 25°C 'ce = >c110 VCE = 0.8 BVces Vge = 15V Rg = 10il L - 1mH Test Circuit
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TA49178 HGTG20N60C3 G20N60C3 HGTP20N60C3 HGT1S20N60C3S HGT1S20N60C3S9A relay 12v 1c/o 12V 1C/O relay N-CHANNEL 45A TO-247 POWER MOSFET G20N60

g20n60c3d

Abstract: Transistor No C110 on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only , Voltage VCE(SAT) 'c = 'C110 VGE = 15V Tc = 25°C - 1.4 1.8 V Tc = 150°C - 1.5 1.9 V Gate to Emitter , VCe = 600V 20 - - A Gate to Emitter Plateau Voltage VGEP 'CE = 'C110. VCE = 05 bvCES - 8.4 - V On-State Gate Charge Qg(ON) 'CE = >C110 vCE = 0.5 BVces VGE = 15V - 91 110 nC Vqe = 20V - 122 145 nC Current Turn-On Delay Time td(ON)l IGBT and Diode at Tj = 25°C 'CE = >C110 vCE = 0.8 BVces Vge = 15V Rg =
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HGTG20N60C3D TA49063 TA49179 g20n60c3d G20N60C g20n60c3d equivalent hg*20n60 G20N60C3D

ha13559

Abstract: C103Z Boostout L 13 290 HA13559FP Block Diagram 291 H A 13559FP Pin Assignment Pin No. 1 2 3 4 5 , HA13559FP Application V SS I R107 Powgood Veti > 1 C110 26 25 24 'r r 23 22 C109 R106 2 , characteristics table. 295 H A 13559F P External Components Part No. R101,R102 R103, R104 R105, R106 R107 , C103, C104 C106 C107.C108 C109 C110 C112 D101 Purpose Power amplifier output stabilization LVI , V to 13.8 V 2. ASO of each output transistor is shown below. Operating locus must be within the ASO
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ha13559 C103Z
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