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Transistor MJ2955

Catalog Datasheet MFG & Type PDF Document Tags

Transistor MJ2955

Abstract: MJ2955 300 watts amplifier Silicon Power Transistor MJ2955 Technical Data Typical Applications : These devices are designed for general purpose switching and amplifier applications. Specification Fetaures : F Complementary PNP Silicon Power Transistor F 15 Amp / 60 V device in TO-204AA [ TO-3 ] package F 115 Watts device F Excellent safe operating area Symbol Parameters / Conditions Ratings Maximum Ratings : V CEO Collector- Emitter Voltage 60 Vdc V CER V CB V EB IC IB Collector
USHA
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Transistor MJ2955 MJ2955 300 watts amplifier MJ2955 TRANSISTOR

Transistor MJ2955

Abstract: MJ2955 300 watts amplifier circuit diagram transistor. The MJ2955 provides current to 5.0 A. Resistor R in conjunction with the VBE of the PNP , differential voltage minimum is increased by VBE of the pass transistor. MJ2955 or Equiv. Output The , . This series of devices can be used with a series­pass transistor to boost output current capability at , Short Circuit Current Limiting · Output Transistor Safe­Area Compensation THREE­TERMINAL POSITIVE , pass, and Output Transistor Safe­Area Compensation that reduces the output short circuit current as
ON Semiconductor
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LM340 LM340T LM340AT MJ2955 300 watts amplifier circuit diagram MC1741G MJ2955 mexico isc MJ2955 transistor Mj2955 power transistor using regulator LM340/D

2N3055 power amplifier circuit

Abstract: 2n3055 applications. 2N3055 * PNP MJ2955 * *ON Semiconductor Preferred Device NPN · DC Current Gain - hFE = , Publication Order Number: 2N3055/D 2N3055 MJ2955 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ , 2N3055 MJ2955 20 IC, COLLECTOR CURRENT (AMP) 10 6 4 2 1 0.6 0.4 0.2 6 BONDING WIRE LIMIT THERMALLY , ) 60 500 µs 250 µs 2N3055, MJ2955 50 µs dc 1 ms There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves
ON Semiconductor
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2N3055 power amplifier circuit 2n3055 application 2N3055 MEXICO 2n3055 circuit 2N3055 typical applications 2N3055 MJ2955 204AA

2n3055

Abstract: 2N3055 NPN Transistor 2N3055(NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors , Units / Tray MJ2955 175 Shipping TOâ'204AA TOâ'204AA 100 Units / Tray MJ2955G , Number: 2N3055/D 2N3055(NPN), MJ2955(PNP) Ã Ã Ã Ã Ã Ã , the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC â' VCE limits of the transistor that must be observed for reliable
ON Semiconductor
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2N3055 NPN Transistor 2N3055 power amplifier circuit diagram 2n3055 circuit diagram 2n3055 application note

2n3055 malaysia

Abstract: MJ2955 2n3055 200 watts amplifier 2N3055, MJ2955 Complementary Power Transistors Designed for use in general-purpose amplifier and , MJ2955 Dimensions Minimum Maximum A 38.75 39.96 B 19.28 22.23 C 7.96 , 31/05/05 V1.0 2N3055, MJ2955 Complementary Power Transistors Thermal Characteristics , 300µs, Duty Cycle 2.0%. (2) fT = hfe · ftest. Page 2 31/05/05 V1.0 2N3055, MJ2955 , handling ability of a transistor: IC, Collector Current (AMP) average junction temperature and second
Multicomp
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2n3055 malaysia MJ2955 2n3055 200 watts amplifier DC variable power with 2n3055 2n3055 pnp 2n3055 IC 2N3055 curve

2N3055 power circuit

Abstract: 2N3055 power amplifier circuit general­purpose switching and amplifier applications. 2N3055 * PNP MJ2955 * *ON Semiconductor Preferred Device , April, 2001 ­ Rev. 2 Publication Order Number: 2N3055/D 2N3055 MJ2955 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ , : Pulse Width v 300 µs, Duty Cycle v 2.0%. http://onsemi.com 2 2N3055 MJ2955 20 IC, COLLECTOR , ) SECOND BREAKDOWN LIMIT 10 20 40 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 60 500 µs 250 µs 2N3055, MJ2955 50 µs dc 1 ms There are two limitations on the power handling ability of a transistor: average
ON Semiconductor
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2N3055 power circuit 2n3055 equal 2N3055 JAPAN 2N3055-1 value of 2n3055 Application Notes 2n3055 Amplifier

MJ2955 300 watts amplifier circuit diagram

Abstract: MJ2955 2n3055 200 watts amplifier 2N3055, MJ2955 Preferred Device Complementary Silicon Power Transistors . . . designed for , /°C TJ, Tstg ­ 65 to + 200 °C xxxx55 = Device Code xxxx= 2N3055 or MJ2955 A = Assembly , Device Package Shipping 2N3055 TO-204AA 100 Units / Tray MJ2955 TO-204AA 100 , Publication Order Number: 2N3055/D 2N3055, MJ2955 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise , There are two limitations on the power handling ability of a transistor: average junction temperature
ON Semiconductor
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MJ2955 2n3055 200 watts amplifier diagram 2N3055 equivalent transistor NUMBER DC variable power with 2n3055 datasheet mj2955 TO-3 2N3055 transistor equivalent 22N3055

2N3055

Abstract: DC variable power with 2n3055 2N3055, MJ2955 Preferred Device Complementary Silicon Power Transistors . . . designed for , Characteristic Symbol RqJC Max Unit xxxx55 = Device Code xxxx= 2N3055 or MJ2955 A = Assembly Location , ) 140 120 100 80 60 40 20 0 0 25 50 75 100 125 150 175 200 2N3055H MJ2955 100 Units / Tray 100 , /D 2N3055, MJ2955 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ , ) 60 500 ms 250 ms dc 1 ms There are two limitations on the power handling ability of a transistor
ON Semiconductor
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2N3055G power transistor 2n3055 2N3055 transistor 2n3055 amplifier mj2955 safe operating area data transistor 2n3055

2N3055

Abstract: 2n3055 motorola Motorola Bipolar Power Transistor Device Data 3 2N3055 MJ2955 PACKAGE DIMENSIONS A N NOTES , * PNP MJ2955 * Complementary Silicon Power Transistors . . . designed for general­purpose , overall value. © Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 2N3055 MJ2955 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted , Registration. (2N3055) (1) Pulse Test: Pulse Width 300 µs, Duty Cycle v v 2.0%. 2N3055, MJ2955 20
Motorola
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2n3055 motorola 2N3055-D 2N3055 NPN MOTOROLA POWER TRANSISTOR pin out TRANSISTOR 2n3055 hfe 2n3055

mj2955

Abstract: 2N3055 MJ2955 COMPLEMENTARY SILICON POWER TRANSISTORS â  STMicroelectronics PREFERRED , NPN transistor mounted in Jedec TO-3 metal case. It is intended for power switching circuits, series , MJ2955. 2 TO-3 INTERNAL SCHEMATIC DIAGRAM C , cto r-B a se V olta g e ( I e = 0) 2N 3055 PNP Unit MJ2955 100 V 70 V C , are negative. August 1999 1/4 2N3055 / MJ2955 THERMAL DATA Rthj-case Therm al R
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SC08820 SC08830 P003F

MJ2955 TRANSISTOR

Abstract: Transistor MJ2955 MJ2955 SILICON PNP SWITCHING TRANSISTOR s s SGS-THOMSON PREFERRED SALESTYPE PNP TRANSISTOR DESCRIPTION The MJ2955 is a silicon epitaxial-base planar PNP transistors in TO-3 metal case, intented for , Temperature September 1997 150 W -65 to 200 o C 200 o C 1/4 MJ2955 THERMAL , Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 2/4 20 5 4 70 MHz MJ2955 TO , 1.193 A P C O N B V E G U D R P003F 3/4 MJ2955
STMicroelectronics
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Mj2955 power transistor

2N3055 MOTOROLA

Abstract: 2N3055 power amplifier circuit . 1995 Motorola Bipolar Power Transistor Device Data 1 2N3055 MJ2955 ELECTRICAL CHARACTERISTICS , Motorola Bipolar Power Transistor Device Data 3 2N3055 MJ2955 PACKAGE DIMENSIONS A N NOTES , * PNP MJ2955 * Complementary Silicon Power Transistors . . . designed for general­purpose , Registration. (2N3055) (1) Pulse Test: Pulse Width 300 µs, Duty Cycle v v 2.0%. 2N3055, MJ2955 20 , ability of a transistor: average junction temperature and second breakdown. Safe operating area curves
Motorola
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2N3055/MJ2955 2n3055 datasheet 2N3055 TO-3 2N3055* motorola motorola power transistor 2N3055 equivalent transistor 2n3055

MJ2955 TRANSISTOR

Abstract: pnp transistor 2N3055 A * V cE (*t) * NPN 2N3055 PNP MJ2955 11 v @ 'c = 4 0 A - 'b = 400 , 17.30 4.36 11.18 2N3055 NPN / MJ2955 PNP ELECTRICAL CHARACTERISTICS ( Tc = 25°C unless otherwise , 2.0% (2 ) f T = | K » | * f tort MHz 2.5 15 120 2N3055.MJ2955 AC TIVE REG ION SAFE O PERATING AREA(SOA) There are two limitation on the power handling ability of a transistor: average junction temperature and second breakdown safe operating area curves indicate Ic-V C e limits of the transistor that
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pnp transistor 2N3055 2n3055 collector characteristic curve t 2N3055 J 2N3055 2n3055 pin 2n3055 npn power transistor

2n3055

Abstract: 2N3055 curve mA MAXIMUM RATINGS NPN PNP 2N3055 MJ2955 Characteristic Symbol Rating Unit Collector-Emitter , ) 15 120 There are two limitation on the power handling ability of a transistor: average junction temperature and second breakdown safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation , = |hfe| °ftert 2N3055.MJ2955 ACTIVE REGION SAFE OPERATING AREA(SOA) E * -Bcndng VWre Limit
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npn 2n3055 MJ29S5

2n3055 application note

Abstract: 2N3055 power amplifier circuit diagram 2N3055(NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors . . . , CHARACTERISTICS Characteristic Symbol RqJC Max Unit xxxx55 = Device Code xxxx= 2N3055 or MJ2955 A = , 50 75 100 125 150 175 200 MJ2955 MJ2955G *For additional information on our Pb-Free strategy , ), MJ2955(PNP) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ , ) 60 500 ms 250 ms dc 1 ms There are two limitations on the power handling ability of a transistor
ON Semiconductor
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2n3055 pin out diagram NPN Transistor 2N3055

transistor 2N3055

Abstract: MJ2955 300 watts amplifier MJ2955 (SILICON) PNP SILICON POWER TRANSISTOR . designed for general-purpose switching and , '¢ Complement to Motorola's "Epi-Base" Transistor, 2N3055 MAXIMUM RATINGS Rating Symbol Velue Unit , \ 0 25 50 75 100 125 150 175 200 Tc, CASE TEMPERATURE ("CI 15 AMPERE POWER TRANSISTOR PNP SILICON 60 VOLTS 150 WATTS 411 MJ2955 (continued) ELECTRICAL CHARACTERISTICS (Tc = 25°C unless , . COLLECTOR CURRENT (AMP) 412 MJ2955 (continued) FIGURE 4 - THERMAL RESPONSE 1. TIME (mj) FIGURE 5 -
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MJ3000 MJ3001 MJ2500 transistor 2N3055 MBD5300 AN-415 C-200

2n3055

Abstract: 2N3055G 2N3055(NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors , 2N3055G TO-204AA (Pb-Free) 100 Units / Tray MJ2955 175 Shipping TO-204AA TO , . Publication Order Number: 2N3055/D 2N3055(NPN), MJ2955(PNP) Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ , two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be
ON Semiconductor
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2N30

2N3055

Abstract: 2n3055 malaysia 2N3055 MJ2955 ® COMPLEMENTARY SILICON POWER TRANSISTORS s s STMicroelectronics , Planar NPN transistor mounted in Jedec TO-3 metal case. It is intended for power switching circuits , MJ2955. 1 2 TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter , Temperature Max. Operating Junction Temperature 2N3055 PNP Unit MJ2955 100 V 70 V 60 , types voltage and current values are negative. August 1999 1/4 2N3055 / MJ2955 THERMAL DATA
STMicroelectronics
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2N3055 series voltage regulator 2N3055 ST 2n3055 voltage regulator st 2n3055 complementary npn-pnp complementary npn-pnp power transistors

2n3055

Abstract: 2N3055M NPN PNP 2N3055 MJ2955 Characteristic Symbol Rating Unit Collector-Emitter Voltage VCEO 60 V , are two limitation on the power handling ability of a transistor: average junction temperature and second breakdown safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than , 300 us , Duty Cycle ^ 2.0% fT= |hf9| °ftert 2N3055.MJ2955 ACTIVE REGION SAFE OPERATING AREA(SOA) E
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OCR Scan
2N3055M 2N3055MJ

2N3055

Abstract: 2n3055 malaysia 2N3055 MJ2955 ® COMPLEMENTARY SILICON POWER TRANSISTORS s s ST PREFERRED SALESTYPES COMPLEMENTARY NPN-PNP DEVICES DESCRIPTION The 2N3055 is a silicon epitaxial-base NPN transistor in Jedec TO , and high fidelity amplifiers. The complementary PNP type is MJ2955. 1 2 TO-3 INTERNAL , Voltage (I E = 0) 2N3055 PNP Unit MJ2955 100 V V CER Collector-Emitter Voltage (R BE , current values are negative. August 1998 1/4 2N3055 / MJ2955 THERMAL DATA R thj-case
STMicroelectronics
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2N3055 specification 2N3055 schematic diagram
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