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HS0-6254RH-Q Intersil Corporation 5 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, DIE-16 visit Intersil

Transistor J438

Catalog Datasheet MFG & Type PDF Document Tags

Transistor J438

Abstract: j438 2SJ438 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-MOSV) 2SJ438 DC-DC Converter, Relay Drive and Motor Drive Applications Unit: mm 4-V gate drive Low drain-source ON resistance : RDS (ON) = 0.16 (typ.) High forward transfer admittance : |Yfs| = 4.0 S (typ.) Low , channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution , µC Marking J438 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free
Toshiba
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Transistor J438 j438 J438 3 SC-67 2-10R1B

Transistor J438

Abstract: J438 2SJ438 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-MOSV) 2SJ438 DC-DC Converter, Relay Drive and Motor Drive Applications Unit: mm 4-V gate drive Low drain-source ON resistance : RDS (ON) = 0.16 (typ.) High forward transfer admittance : |Yfs| = 4.0 S (typ.) Low , -5 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor , C IDR = -5 A, VGS = 0 V IDR = -5 A, VGS = 0 V dIDR / dt = 50 A / s Marking J438 Part No
Toshiba
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Transistor J438

Abstract: J438 3 2SJ438 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-MOSV) 2SJ438 DC-DC Converter, Relay Drive and Motor Drive Applications z 4-V gate drive z Low drain-source ON resistance z High forward transfer admittance z Enhancement mode : RDS (ON) = 0.16 (typ.) : |Yfs| = 4.0 S (typ , channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution. 1 , - - Unit A A V ns µC Marking J438 Part No. (or abbreviation code) Lot No. A line
Toshiba
Original

Transistor J438

Abstract: j438 2SJ438 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-MOSV) 2SJ438 DC-DC Converter, Relay Drive and Motor Drive Applications Unit: mm 4-V gate drive Low drain-source ON resistance : RDS (ON) = 0.16 (typ.) High forward transfer admittance : |Yfs| = 4.0 S (typ.) Low , -5 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor , C IDR = -5 A, VGS = 0 V IDR = -5 A, VGS = 0 V dIDR / dt = 50 A / s Marking J438 Note 4
Toshiba
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100B0R5BW

Abstract: 100B102JW Multi­Turn, Bourns #3224W Voltage Regulator, Micro­8, Motorola #LP2951 Bipolar NPN Transistor, SOT , V, IDQ = 100 mA, Pout = P1dB CW f MHz 1990 2110 2230 Zsource 2.85 ­ j4.38 2.89 ­ j5.04 2.73 ­ j6
Motorola
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100B0R5BW 100B102JW 100B5R6BW MRF21010R1 MRF21010LSR1

Transistor J438

Abstract: 100B102JW Multi­Turn, Bourns #3224W Voltage Regulator, Micro­8, Motorola #LP2951 Bipolar NPN Transistor, SOT , P1dB (CW) f MHz 1990 2110 2230 Zin Zin 2.85 + j4.38 2.89 + j5.04 2.73 + j6.19 ZOL* 2.93 + j1.71 2.76
Motorola
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MRF21010 MRF21010S

CRCW08051001FKEA

Abstract: MRF21010 r1 . LIFETIME BUY LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 RF Power Field Effect Transistor CASE 360B-05 , Transistor, SOT-23, On-Semi #BC847ALT1G PCB Rogers RO4350, 0.5 mm, r = 3.53 MRF21010LR1 4 RF , Zload 1990 2.85 - j4.38 2.93 - j1.71 2110 2.89 - j5.04 2.76 - j2.28 2230
Freescale Semiconductor
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CRCW08051001FKEA MRF21010 r1 marking us capacitor pf l1 ATC100B0R5BT500XT ONsemi marking C10 ATC100B102JT50XT MRF21010--1 NI-360

atc100B100GT500XT

Abstract: ATC100B0R5BT500XT Freescale Semiconductor Technical Data NOT RECOMMENDED FOR NEW DESIGN RF Power Field Effect Transistor MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFET Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier , Voltage Regulator, Micro - 8, On - Semi #LP2951ACDMR2G T2 Bipolar NPN Transistor, SOT - 23, On - , f MHz Zload Zsource 1990 2.85 - j4.38 2.93 - j1.71 2110 2.89 - j5
Freescale Semiconductor
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atc100B100GT500XT T491D106K035AT Nippon chemi Nippon capacitors

CRCW08052201FKEA

Abstract: MRF21010-1 Freescale Semiconductor Technical Data Document Number: MRF21010-1 Rev. 10, 10/2008 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier , Regulator, Micro-8, On-Semi #LP2951ACDMR2G Bipolar NPN Transistor, SOT-23, On-Semi #BC847ALT1G Rogers , 1990 2110 2230 Zsource 2.85 - j4.38 2.89 - j5.04 2.73 - j6.19 Zload 2.93 - j1.71 2.76 - j2
Freescale Semiconductor
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CRCW08052201FKEA CRCW080510R0FKE

CRCW08051001FKEA

Abstract: TLX8-0300 Document Number: MRF21010-2 Rev. 11, 10/2008 Freescale Semiconductor Technical Data RF Power Field Effect Transistor NOT RECOMMENDED FOR NEW DESIGN Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier , -8, On-Semi #LP2951ACDMR2G T2 Bipolar NPN Transistor, SOT-23, On-Semi #BC847ALT1G PCB Rogers , 2.85 - j4.38 2.93 - j1.71 2110 2.89 - j5.04 2.76 - j2.28 2230 2.73 - j6
Freescale Semiconductor
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TLX8-0300 C-XM-99-001-01 bourns 3224w FM LDMOS freescale transistor pd cms marking c3 sot 353 MRF21010--2 360C-05 NI-360S

NIPPON CAPACITORS

Abstract: Transistor J438 11 LAST SHIP 30 JUN 12 RF Power Field Effect Transistor LIFETIME BUY Table 4. Electrical , #3224W Voltage Regulator, Micro-8, On-Semi #LP2951ACDMR2G Bipolar NPN Transistor, SOT-23, On-Semi , MHz VDD = 28 V, IDQ = 100 mA, Pout = 10 W PEP f MHz 1990 2110 2230 Zsource 2.85 - j4.38 2.89 -
Freescale Semiconductor
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sot-23 macom

Abstract: MRF21010SR1 , Bourns #3224W T1 Voltage Regulator, Micro­8, Motorola #LP2951 T2 Bipolar NPN Transistor, SOT , , Pout = P1dB CW f MHz ZOL* Zin 1990 2.85 + j4.38 2.93 + j1.71 2110 2.89 + j5
Motorola
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MRF21010SR1 sot-23 macom 100B5R6B MRF21010/D

10ACPR

Abstract: #3224W Voltage Regulator, Micro - 8, #LP2951 Bipolar NPN Transistor, SOT - 23, #BC847 Rogers RO4350, 0.5 , 2.85 - j4.38 2.89 - j5.04 2.73 - j6.19 Zload 2.93 - j1.71 2.76 - j2.28 2.83 - j2.59 Zsource = Test
Freescale Semiconductor
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10ACPR
Abstract: #3224W Voltage Regulator, Micro - 8, Motorola #LP2951 Bipolar NPN Transistor, SOT - 23, Motorola #BC847 , P1dB CW f MHz 1990 2110 2230 Zsource 2.85 - j4.38 2.89 - j5.04 2.73 - j6.19 Zload 2.93 - j1.71 2.76 - Motorola
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Abstract: Multi­Turn, Bourns #3224W Voltage Regulator, Micro­8, Motorola #LP2951 Bipolar NPN Transistor, SOT , Zo = 10 VDD = 28 V, IDQ = 100 mA, Pout = P1dB (CW) f MHz 1990 2110 2230 Zin Zin 2.85 + j4.38 Motorola
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Abstract: ­8, Motorola #LP2951 Bipolar NPN Transistor, SOT­23, Motorola #BC847 Rogers RO4350, 0.5 mm, r = 3.53 , Zo = 10 VDD = 28 V, IDQ = 100 mA, Pout = P1dB CW f MHz 1990 2110 2230 Zsource 2.85 + j4.38 2.89 Motorola
Original

100B102JW

Abstract: NI-360 #LP2951 T2 Bipolar NPN Transistor, SOT­23, Motorola #BC847 RF Connectors Type SMA, Johnson , 2.85 + j4.38 2.93 + j1.71 2110 2.89 + j5.04 2.76 + j2.28 2230 2.73 + j6.19 2.83 +
Motorola
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293D106X9035D2T

MRF21010R1

Abstract: 567 tone , Bourns #3224W T1 Voltage Regulator, Micro­8, Motorola #LP2951 T2 Bipolar NPN Transistor, SOT , 1990 2.85 ­ j4.38 2.93 ­ j1.71 2110 2.89 ­ j5.04 2.76 ­ j2.28 2230 2.73 ­ j6
Motorola
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567 tone

j438

Abstract: #LP2951 Bipolar NPN Transistor, SOT­23, Motorola #BC847 RF Connectors Type SMA, Johnson #142­0701­631 , 1990 2110 2230 Zin Zin 2.85 + j4.38 2.89 + j5.04 2.73 + j6.19 ZOL* 2.93 + j1.71 2.76 + j2.28 2.83 +
Motorola
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zener z1

Abstract: 12 volt zener diode 10 watts MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor The MRF1513T1 is designed for broadband commercial and industrial applications at frequencies to 520 , Zin 4.72 +j4.38 4.88 +j6.34 3.22 +j5.24 ZOL* 12.57 +j1.88 11.21 +j5.87 9.82 +j8.63 VDD = 12.5 V , , N­Channel enhancement mode, Lateral Metal­Oxide Semiconductor Field­Effect Transistor (MOSFET). Motorola , Transistor" for additional information. AMPLIFIER DESIGN Impedance matching networks similar to those used
Motorola
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zener z1 12 volt zener diode 10 watts j718 AN4005/D EB209/D AN721 AN215A
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