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ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
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TIL604HR2 Texas Instruments Photo Transistor, PHOTO TRANSISTOR DETECTOR visit Texas Instruments
HFA3102B96 Intersil Corporation C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AB, MS-012AB, 14 PIN visit Intersil

Transistor J182

Catalog Datasheet MFG & Type PDF Document Tags

Transistor J182

Abstract: j182 MDS500L 500 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz GENERAL DESCRIPTION CASE OUTLINE 55ST Style 1 The MDS500L is a high power COMMON BASE bipolar transistor. It is designed for MODE-S ELM systems in the 1030 - 1090 MHz frequency band. The transistor includes input and output prematch for broadband performance. The device has gold thin-film metallization and diffused ballasting in , 1030 1090 1150 Zsource (ohms) 1.90 ­ j1.60 2.10 ­ j1.61 2.26 ­ j1.82 Zsource Zload (ohms
Microsemi
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Transistor J182 j182 j182 transistor J221 j182 ic j161 51157X 1030MH 1090MH

Transistor J182

Abstract: MDS500L 500 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz GENERAL DESCRIPTION CASE OUTLINE 55ST Style 1 The MDS500L is a high power COMMON BASE bipolar transistor. It is designed for MODE-S ELM systems in the 1030 - 1090 MHz frequency band. The transistor includes input and output prematch for broadband performance. The device has gold thin-film metallization and diffused ballasting in , 1030 1090 1150 Zsource (ohms) 1.90 â'" j1.60 2.10 â'" j1.61 2.26 â'" j1.82 Zsource Zload
Microsemi
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Transistor J182

Abstract: transistor 6w MAPRST1214-6UF Radar Pulsed Power Transistor 6W, 1.2-1.4 GHz, 6ms Pulse, 25% Duty M/A-COM Products Released, 30 May 07 Outline Drawing Features · · · · · · · · · NPN silicon , . MAPRST1214-6UF Radar Pulsed Power Transistor 6W, 1.2-1.4 GHz, 6ms Pulse, 25% Duty M/A-COM Products , 3.2 16.9 + j18.0 1.3 3.8 ­ j 3.4 14.2 + j16.4 1.4 3.4 ­ j 3.7 11.7 + j18.2 2 , ) or information contained herein without notice. MAPRST1214-6UF Radar Pulsed Power Transistor 6W
M/A-COM
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transistor 6w

Transistor J182

Abstract: j182 transistor MAPRST1214-6UF Radar Pulsed Power Transistor 6W, 1.2-1.4 GHz, 6ms Pulse, 25% Duty Features · · · · · · · · · NPN silicon microwave power transistors Common base configuration Broadband Class C , notice. MAPRST1214-6UF Radar Pulsed Power Transistor 6W, 1.2-1.4 GHz, 6ms Pulse, 25% Duty M/A-COM , .4 11.7 + j18.2 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering , -6UF Radar Pulsed Power Transistor 6W, 1.2-1.4 GHz, 6ms Pulse, 25% Duty Test Fixture Circuit Dimensions M
M/A-COM
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1030MHz-1090MHz

Abstract: capacitor 470uf/63v 1011LD110A 110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION The 1011LD110A is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 110Wpk of RF power from 1030MHz to 1090 MHz. The device is nitride passivated and utilizes gold metallization to ensure highest MTTF. The transistor includes input and output prematch for broadband , - j1.66 2.87 - j1.79 2.56 - j1.82 * VDS = 32V, IDQ = 250mA, Pout = 110W * Pulse Format: 32µs
Microsemi
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ADG419 1030MHz-1090MHz capacitor 470uf/63v 1000uf 63V electrolytic capacitor description of capacitor 470uf 63v capacitor 1000uf 63v 1000uf capacitor RT6006

Transistor J182

Abstract: 1011LD110A 110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION The 1011LD110A is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 110Wpk of RF power from 1030MHz to 1090 MHz. The device is nitride passivated and utilizes gold metallization to ensure highest MTTF. The transistor includes input and output prematch for broadband , - j1.66 2.87 - j1.79 2.56 - j1.82 * VDS = 32V, IDQ = 250mA, Pout = 110W * Pulse Format: 32µs
Microsemi
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Transistor J182

Abstract: Transistor Introduction The AGR18090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for global system for mobile communication (GSM), enhanced , GHz-1.880 GHz, LDMOS RF Power Transistor Preliminary Data Sheet September 2003 Electrical , Power Transistor Test Circuit Illustrations for AGR18090E FB1 VGG + Z12 C6 R2 C5 C4 C3 Z11 Z4 C2 Z6 , Inc. 3 AGR18090E 90 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor Preliminary Data Sheet
Agere Systems
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AGR18090EU AGR18090EF DS02-326RFPP

Transistor J182

Abstract: 18-12 049 transistor Transistor Introduction Table 1. Thermal Characteristics The AGR18090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for global , observed. AGR18090E 90 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor Preliminary Data Sheet , Preliminary Data Sheet September 2003 AGR18090E 90 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor , , LDMOS RF Power Transistor U CT IN D 0.48 90 0.1 0.49 170 10 0.4 GTH S TO
TriQuint Semiconductor
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18-12 049 transistor TRANSISTOR Z10 RF POWER TRANSISTOR 100B100JW500X C1812C105K5RACTR JESD22-A114 AGR18090U M-AGR21090U AGR18090F M-AGR21090F

SL-5020

Abstract: j196 Advance Data Sheet Product Description The SL-5020 is Stanford Microdevices' high-linearity 50W PEP LDMOS transistor designed for base station applications up to 2000 MHz. Rated for minimum peak envelope power of 50W, it is ideal for CDMA Single or Multi-Carrier Power Amplifiers in Class A or AB operation. Patented LDMOS Technology is used to achieve high performance and reliability at a low cost. Dual , .40 0.38 - j4.22 0.42 - j4.11 Z L o ad 1.10 - j1.82 1.08 - j1.79 1.14 - j1.83 1.16 - j1.96 1.14 - j2
Stanford Microdevices
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j196 J464 SL-50201 SL-50202

J182 transistor

Abstract: "RF Power Amplifier" Transistor Introduction Table 1. Thermal Characteristics The AGR18090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for global , , LDMOS RF Power Transistor Electrical Characteristics Recommended operating conditions apply unless , . Preliminary Data Sheet April 2004 90 W, 1.805 GHz- AGR18090E 1.880 GHz, LDMOS RF Power Transistor , AGR18090E 90 W, 1.805 GHz- Preliminary Data Sheet April 2004 1.880 GHz, LDMOS RF Power Transistor
Agere Systems
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JESD22-C101A DS04-157RFPP DS04-104RFPP

w18 transistor

Abstract: processing to MIL-STD-883. D 0.131" (3.33mm) TRANSISTOR COUNT: 200 SUBSTRATE CONNECTED TO V+ DG529 , ) TRANSISTOR COUNT: 200 SUBSTRATE CONNECTED TO V+ 10 , : 21-0045A (PDF) Use pkgcode/variation: J18-2* Ceramic DIP;18 pin;.300" Dwg: 21-0045A (PDF) Use pkgcode/variation: J18-2* -55C to +125C RoHS/Lead-Free: No Materials Analysis -55C to +125C RoHS/Lead-Free: No
Maxim Integrated Products
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w18 transistor DG528/DG529 DG528 ADG528/ADG529 DG528CJ DG528CWN DG528CK

100B100JW500X

Abstract: AGR18090E Transistor Introduction Table 1. Thermal Characteristics The AGR18090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for global , GHz, LDMOS RF Power Transistor Electrical Characteristics Recommended operating conditions apply , . Preliminary Data Sheet February 2004 90 W, 1.805 GHz- AGR18090E 1.880 GHz, LDMOS RF Power Transistor , Transistor U CT IN D 90 0.6 10 0.1 0.4 20 0.2 50 20 10 5.0 4.0 3.0
Agere Systems
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DS04-033RFPP
Abstract: Transistor Introduction The AGR18090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for global system for mobile communication (GSM), enhanced , Power Transistor Preliminary Data Sheet November 2003 Electrical Characteristics Recommended , November 2003 AGR18090E 90 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor Test Circuit , Power Transistor Preliminary Data Sheet November 2003 Typical Performance Characteristics Z0 = 4 Agere Systems
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AGR18090EF

Abstract: Transistor Introduction The AGR18090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for global system for mobile communication (GSM), enhanced , , LDMOS RF Power Transistor Preliminary Data Sheet September 2003 Electrical Characteristics , Preliminary Data Sheet September 2003 AGR18090E 90 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor , -1.880 GHz, LDMOS RF Power Transistor Preliminary Data Sheet September 2003 Typical Performance
PEAK Devices
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100B220GW

Abstract: 100B100GW , 1/8 W Chip Resistor (0805) NPN Bipolar Transistor, SOT - 23, #BC847 Voltage Regulator, Micro - 8 , .65 1.88 + j2.45 1.79 + j2.40 1.47 + j1.82 1.58 + j1.52 Zsource = Test circuit impedance as measured
Freescale Semiconductor
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100B220GW 100B100GW MRF9100R3 MRF9100SR3

100B330JW

Abstract: chip resistors 0805 philips Chip Resistor (0805) NPN Bipolar Transistor, SOT­23, Motorola #BC847 Voltage Regulator, Micro , ­ j2.45 1.79 ­ j2.40 1.47 ­ j1.82 1.58 ­ j1.52 = Complex conjugate of source impedance. ZOL* =
Motorola
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MRF9100 100B330JW chip resistors 0805 philips esd z10

j350 TRANSISTOR

Abstract: LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET RF power transistor suitable for , CW, 28 V INDUSTRIAL HEATING, RUGGED RF POWER LDMOS TRANSISTOR â'"10 2350 MHz MHT1006NT1 , the source terminal for the transistor. Figure 1. Pin Connections 1. All data measured in , Q1 RF Power LDMOS Transistor AFT27S010NT1 Freescale R1 4.75 , Chip Resistor , 1.00 - j1.60 1.04 + j1.82 3.21 + j3.00 20.8 40.0 10 61.1 â'"16 2600 0.985 -
Freescale Semiconductor
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j350 TRANSISTOR MHT1006N MHT100

Transistor J182

Abstract: Transistor Introduction The AGR19060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for personal communication service (PCS , Transistor Preliminary Data Sheet July 2003 Electrical Characteristics Recommended operating , Sheet July 2003 AGR19060E 60 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor Test Circuit , Schematic Agere Systems Inc. 3 AGR19060E 60 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor
Agere Systems
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AGR19060EU AGR19060EF IS-95 DS01-216RFPP
Abstract: LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This high ruggedness device is designed , ) 1.8â'"600 MHz, 300 W CW, 50 V WIDEBAND RF POWER LDMOS TRANSISTOR D (%) 87.5-108 (1,3 , Power LDMOS Transistor MMRF1316NR1 Freescale R1 2.2 k, 1/8 W Chip Resistor , NPN Bipolar Transistor BC847ALT1G ON Semiconductor PCB Rogers RO4350B, 0.030ï'², r = , j18.2 15.2 + j7.99 104 15.5 + j19.6 15.7 + j7.94 108 17.2 + j20.9 16.2 + j7 Freescale Semiconductor
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MMRF1316N

Transistor J182

Abstract: MRF9100R3 NPN Bipolar Transistor, SOT­23, Motorola #BC847 U1 Voltage Regulator, Micro­8, Motorola #LP2951 , .40 960 2.16 ­ j0.25 1.47 ­ j1.82 1000 2.62 ­ j0.25 1.58 ­ j1.52 Zin = Complex
Motorola
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08053G105ZATEA MRF9100/D
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