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LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

Transistor AC 187

Catalog Datasheet MFG & Type PDF Document Tags

Transistor AC 187

Abstract: AC 187 npn transistor TO 1 specification b?E ]' > NPN 1 GHz wideband transistor BF747 PINNING FEATURES â'¢ Stable , DESCRIPTION base 2 â'¢ Good thermal stability. collector Low cost NPN transistor in a plastic , collector current - 50 mA P« total power dissipation up to Ts = 70 °C (note 1) - , 300 mW T* storage temperature -55 150 °C T, junction temperature - 150 °C up to T s = 70 °C (note 1) Note 1. Ta is the temperature at the soldering point of the
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Transistor AC 187 AC 187 npn transistor TO 1 187 transistor npn 53T31

DB64

Abstract: BF747 /DISCRETE b?E NPN 1 GHz wideband transistor £ BF747 FEATURES â'¢ Stable oscillator operation â'¢ High current gain â'¢ Good thermal stability. DESCRIPTION Low cost NPN transistor in a plastic SOT23 , collector - 3 V 'cm peak collector current - 50 mA p« total power dissipation up to Ts = 70 °C (note 1 , to Ts = 70 °C (note 1) - 300 mW Tatg storage temperature -55 150 °C T, junction temperature - 150 °C Note 1. Ta is the temperature at the soldering point of the collector tab. November 1992
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DB64 MBB400 transistor HJ 388 53-J31

Transistor AC 187

Abstract: RTD OPERATION q LOW OFFSET DRIFT: 0.4µV/°C q LOW OUTPUT CURRENT NOISE: 30nAp-p q HIGH PSR: 110dB , Temperature (°C) IR IR VLIN VREG 7.5V to 36V + VPS 4-20 mA XTR112 XTR114 RG VO RL , SPECIFICATIONS At TA = +25°C, V+ = 24V, and TIP29C external transistor, unless otherwise noted. XTR112U , ±0.4 T T A/V % ppm/°C % ±50 ±0.4 ±0.3 ±10 Full Scale (VIN) = 50mV ±100 ±1.5 ±3 ±50 T T T T ±250 ±3 T ±100 µV µV/°C µV/V µV/V T 50 V nA pA/°C
Burr-Brown
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SO-14

transistor tl 187

Abstract: BD187 MOTOROLA m SEMICONDUCTOR TECHNICAL DATA PLASTIC MEDIUM POWER SILICON NPN TRANSISTOR . . . designed for , Current Gainâ'"hpE = 40 (Min) lc = 0.5 Ade BD 185, 187, 189 are complementary with BD 186, 188, 190 MAXIMUM RANGS Rating Symbol Type Value Uni« Collector-Emitter Voltage VCEO BD 185 BD 187 BD 189 30 45 60 Vdc Collector-Base Voltage VCBO BD 185 BD 187 BD 189 40 55 70 Vdc Emitter-Base Voltage v EBO 5 Vdc Collector Current â c 4.0 Ade Base Current 'b 2.0 Ade Total Device Dissipation TC
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transistor tl 187 BD187 TRANSISTOR 187 TRANSISTOR BD 187 BD185 BD189

538 NPN transistor

Abstract: y1 npn specification b7E » NPN 1 GHz wideband transistor FEATURES e BF547 PINNING â'¢ Stable , transistor in a plastic SOT23 envelope. It is intended for VHF and UHF TV-tuner applications and can be , 50 mA P*. total power dissipation - 300 mW up toT s= 70 °C (note 1) T* storage temperature range -55 150 °C Ti junction temperature - 150 °C Note 1 , N AUER PHILIPS/DISCRETE NPN 1 GHz wideband transistor Product specification b7E D BF547
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538 NPN transistor y1 npn S3R31

a106 diode

Abstract: diode A106 PHOO NONLINEARITY CORRECTION USIN G XTR105 â'¢ LOW O FFSET DRIFT: 0.4^lV/°C â'¢ LOW OUTPUT , Process Temperature (°C ) â'"â'" lR - 0.8mA Instrumentation amplifier gain can be configured for a , transistor, unless otherwise noted. XTR105P, U PA RA M ETER CONDITIONS OUTPUT Output Current , mA mA ±50 ±0.9 mA jiA jiA/°C HA/V ^A/V |iA/mA nAp-p * * ±0.4 * * A/V % ppm/°C % * * * * ±250 ±3 * ±100 uV ^iV/°C ixV/V tiV/V * if
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a106 diode diode A106 transistor A106 14-PIN 0033M 1N4753A 1N6286A 17313LS GG33H

TRANSISTOR BD 187

Abstract: TRANSISTOR 187 SEMICONDUCTOR TECHNICAL DATA PLASTIC MEDIUM POWER SILICON NPN TRANSISTOR . . . designed for use in 5 to 10 Watt , (Min) â'¢ BD 185, 187. 189 are complementary with BD 186, 188. 190 lc = 0.5 Ade MAXIMUM RANGS Rating Symbol Type Value Unit Collector-Emitter Voltage VCEO BD 185 BD 187 BD 189 30 45 60 Vdc Collector-Base Voltage VCBO BD 185 BD 187 BD 189 40 55 70 Vdc Emitter-Base Voltage v EBO 5 Vdc Collector Current 'c 4.0 , /°C Operating and Storage Junction Temperature Range TJ,Tstg â'"65 to +150 °C THERMAL
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transistor bd 320 c 10 watt power transistor bd motorola power transistor to-126 on BE 187 TRANSISTOR BE 187 TRANSISTOR bD1894

aou 746

Abstract: 538 NPN transistor transistor b?E D Product specification BF547 FEATURES PINNING â'¢ Stable oscillator operation PIN , collector The BF547 is a low cost NPN transistor in a plastic SOT23 envelope. It is intended for VHF and , total power dissipation up to Ts = 70 °C (note 1) - 300 mW T- storage temperature range -55 150 °C T, junction temperature - 150 °C Note 1. T, is the temperature at the soldering point of the , Philips Semiconductors K_ ~ "N AHER PHILIPS/DISCRETE b7E » NPN 1 GHz wideband transistor BF547 THERMAL
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aou 746 TRANSISTOR 185 846 S3131

circuit diagram of mosfet based smps power supply

Abstract: AC to DC smps circuit diagram pages as the zener Z1 voltage level (+ VbeTR1) is reached a current pulse is generated through transistor , /turn ratio immediately drops to a much lower level. Together with thyristor Q2 also transistor TR1 will start to conduct (one-shot). The one shot current pulse generated by transistor TR1 is fed to , between 100 mADC and 800 mADC. Diagram a) shows the AC output voltage. Diagram b) shows the output , (Vout1) a) Figure 5 shows the main output voltage (VOUT1) AC ripple during high load conditions at
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TEA1504 AN98011 BZX79C12V circuit diagram of mosfet based smps power supply AC to DC smps circuit diagram pages Bc547 TRANSISTOR SMPS CIRCUIT DIAGRAM USING TRANSISTORS TEA15 BYD33J 1N4148
Abstract: OFFSET DRIFT: 0.4 jiV/°C â'¢ LOW OUTPUT CURRENT NOISE: 30nAp-p â'¢ HIGH PSR: 110dB min â'¢ HIGH CMR , while the XTR114 has two 1OOjiA sources for RTD excitation. -2 0 0 °C +850°C Process Tem perature (°C) Versatile linearization circuitry provides a 2nd-order correction to the RTD, typically , , and TIP 29C external transistor, unless otherw ise noted. X TR 112U X TR 114U PA R A M ETER C O , mA ±50 ±0.9 mA iiA jiA /°C HA/V HA/V |±A/mA M-Ap-p S = 40/R g ±0.05 ±3 0.003 -
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70LERANC1NG ZZ235

photo transistor til 78

Abstract: Transistor AC 187 100 TIL 187 NORMALIZED TRANSISTOR STATIC FORWARD CURRENT TRANSFER RATIO vs COLLECTOR CURRENT 7 2-0 , TILI 87-1 THRU TIL1B7 4 TILI 88 1 THRU TIL188-4 AC INPUT OPTOCOUPLERSfOPTOISOLATORS SOOSQ12A D29BO. JANUARY 1987â'" REVISED JULY 1989 â'¢ AC Signal Input â'¢ Gallium Arsenide Dual-Diode Infrared , Environment description The TIL187 and TIL 188 Optocouplers are designed for use in AC applications that , TILI 88 1 THRU TILI 88 4 AC INPUT OPTOCOUPLERS/OPTOISOLATORS absolute maximum ratings at 25 °C
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E65085 TIL188 TIL187-1 TIL187-4 TIL188-1 photo transistor til 78 TL 187 TRANSISTOR NPN TIL 013 Til 160 TL 187 TRANSISTOR

MBB400

Abstract: vqb 201 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF747 FEATURES â , DESCRIPTION Low cost NPN transistor in a plastic SOT23 package. PIN DESCRIPTION 1 base 2 emitter 3 , power dissipation up to Ts = 70 °C; note 1 - 300 mW fT transition frequency lc = 15 mA; VCE = 10 V; f , total power dissipation up to Ts = 70 °C; note 1 - 300 mW Tstg storage temperature -55 +150 °C Tj junction temperature - 150 °C Note 1. Ts is the temperature at the soldering point of the collector pin
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vqb 201 top 256 yn HS11 marking code 604 SOT23 TRANSISTOR K 314

BF547

Abstract: HS11 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF547 FEATURES â , cost NPN transistor in a plastic SOT23 package. MSB003 Top view Marking code: E16. Fig. 1 SOT23 , - 3 V IcM peak collector current - 50 mA Ptot total power dissipation up to Ts = 70 °C; note 1 - , current - 50 mA Ptot total power dissipation up to Ts = 70 °C; note 1 - 300 mW Tstg storage temperature range -65 +150 °C Tj junction temperature - 150 °C Note 1. Ts is the temperature at the
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PHILIPS bf547 PHE0

T3D 62

Abstract: t3d 98 K [/¡pi HEWLETT mLfim PACKARD Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip , bipolar transistor chip that offers excellent high frequency performance. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 14 emitter finger interdigitated geometry yields an intermediate sized transistor with impedances that are easy to match for low , transistor is fabricated using Hewlett-Packard's 10 GHz fT Self-Aligned-Transistor (SAT) process. The die is
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AT-41400 T3D 62 t3d 98 T3D 87 AT-41400-GP4 t3d 54 MM475 17L24

a1757

Abstract: A1797 transistor BLF368 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETERS , DISCRETE SEMICONDUCTORS DAT M3D091 BLF368 VHF push-pull power MOS transistor Product , VHF push-pull power MOS transistor BLF368 PIN CONFIGURATION FEATURES â'¢ High power gain â , N-channel enhancement mode vertical D-MOS transistor, designed for broadcast transmitter applications in the VHF frequency range. The transistor is encapsulated in a 4-lead SOT262A1 balanced flange
Philips Semiconductors
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a1757 A1797 MBB157 MSB008 SNW-EQ-608 SNW-FQ-302A SNW-FQ-302B SCA75

transistor 1211

Abstract: transistor su 312 DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF PACKAGE , transistor has been applied ultra super mini mold package. FEATURES â'¢ High fT : 5 .5 GHz TYP. (@ V , CONNECTIONS 1. Emitter 2. Base 3. Collector ABSOLUTE MAXIMUM RATINGS (Ta = 25 °C) Collector to Base , mW Junction Temperature Tj 125 °C Storage Temperature T s tg -5 5 to +125
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transistor 1211 transistor su 312 transistor zo 109
Abstract: BLF6G22LS-75 Power LDMOS transistor Rev. 02 â'" 14 April 2010 Product data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a , ) (V) (W) (dB) 2-carrier W-CDMA 2110 to 2170 28 17 18.7 [1] ηD IMD3 , 17 W à Gain = 18.7 dB à Efficiency = 30.5 % à IMD3 = â'37.5 dBc à ACPR = â'41.5 dBc Ì NXP Semiconductors
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2002/95/EC

Transistor AC 187

Abstract: AC187K NICHT FÃR NEUENTWICKLUNGEN AC 187 K GERMANIUM - NPN - NF - TRANSISTOR für Ends tufen, in Verbindung mit AC 188 K als komplementäres Paar Mechanische Daten: Gehäuse: Metall (JEDEC TO-1 bzw. 1 A 3 , it-Frequenz bei UCB = 2 V, ~IE = 10 mA fT 5 a i) MHz VALVO TRANSISTOREN 12.70 57 AC 187 K NICHT FÃR , - und Uusik-Auasteuerung ist max« 1,1 W. 5.66 58 VALVO TRANSISTOREN NICHT FÃR NEUENTWICKLUNGEN AC 187 , 59 AC 187 K NICHT FÃR NEUENTWICKLUNGEN 10 !cbo (mA) Mittelwerte obere Streuwerte 1_L.1L 11 uce 2 25
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AC187K ac187 Transistor AC 187 k ac188k valvo valvo transistor

equivalent transistor c 243

Abstract: RD01MUS1 Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING DESCRIPTION 4.6MAX RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. 1.5 , temperature Thermal resistance CONDITIONS RATINGS UNIT 30 V +/-10 V Tc=25°C 3.6 W °C 150 -40 to +125 °C °C/W Junction to case 34.5 Note 1: Above parameters are guaranteed , Power Transistor 520MHz,1W TYPICAL CHARACTERISTICS DRAIN DISSIPATION VS. AMBIENT TEMPERATURE *1:The
Mitsubishi
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equivalent transistor c 243 520MH 48MAX 53MAX
Abstract: NPN 9 GHz wideband transistor BFR520 CHARACTERISTICS T| = 25 °C unless otherwise specified , wideband transistor FEATURES Product specification b?E ] > BFR520 e PINNING â'¢ High , collector base DESCRIPTION The BFR520 is an npn silicon planar epitaxial transistor, intended for , TV tuners (SATV) and repeater amplifiers In fibre-optic systems. The transistor is encapsulated , power dissipation up to Ts = 72 °C (note 1) - - 300 ^FE DC current gain lc = 20 mA -
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S3T31 00ESS33
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