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Thomson-CSF 15

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Thomson-CSF POLYESTER capacitors

Abstract: Thomson-CSF POLYESTER capacitors TPC frequency Capacitance versus temperature 3 2 5 106 Hz BG Serie range Pitch 10 / 15 , 0,068 0,068 0,1 0,1 0,15 0,15 0,22 0,22 0,33 0,33 0,47 0,47 0,68 0,68 1 1 1,5 1,5 2,2 2,2 3,3 3,3 4,7 4,7 6,8 6,8 10 10 15 22 nF nF nF nF nF nF µF µF µF µF µF , Marking Pitch (mm) 10 15 22.5 27.5 Dimensions (mm) Quantity 4 x 9 x 13 6 x 11 x 13 7 x 14 x 13 5.5 x 10.5 x 18 9 x 14.5 x 18 7 x 12.5 x 18 7 x 15 x 25.5 8.5 x 16.5 x 25.5 10 x
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Thomson-CSF

Abstract: EF4442 EF4442 ARINC 429 MULTI-CHANNEL BUFFER RECEIVER (RTA) (N CHANNEL, SILICON GATE) September 1998 1/16 EF4442 2/16 EF4442 3/16 EF4442 4/16 EF4442 5/16 EF4442 6/16 EF4442 7/16 EF4442 8/16 EF4442 9/16 EF4442 10/16 EF4442 11/16 EF4442 12/16 EF4442 13/16 EF4442 14/16 EF4442 15/16 EF4442 Commercial TCS Part-Number (see Note) Norms Tackage Temperature range Tc (°C) Class Drawing number
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EF4442PV Thomson-CSF THOMSON-CSF PRODUCTS Thomson-CSF 15 DIL 28 THOMSON-CSF SEMICONDUCTEURS SPECIFIQUES EF4442CMG/B EF4442CMB/T MIL-STD-883 DSEF4442T/0998

Thomson-CSF electrolytic capacitors

Abstract: Thomson-CSF ceramic capacitor .6 -0 .6 13.5 VcC +1 Vcc +1 5 15 250 + 125 + 150 + 300 V V V mA mA mW °C °C °C Parameter Min -0 .6 -0 , should be a minimum of 15 W-sec/cm2. The erasure time with this dosage is approximately 15 to 20 minutes , removed before erasure. O THOMSON-CSF SEMICONDUCTEURS SPECIFIQUES 15/20 27C1024 6.5 -
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Thomson-CSF electrolytic capacitors Thomson-CSF ceramic capacitor Thomson-CSF ceramic capacitor filter Thomson-CSF capacitors 74TTL Thomson-csf capacitor ceramic DSJ27C1024T/0796

GTO thyristor Application notes

Abstract: Thomson-CSF capacitors to 4000 V . Allowable overvoltage : Us = 2000 to 4600 V 10 s per day . RMS current : Irms max = 15 , M8/8 Plastic case M8/8 Plastic case M8/8 Plastic case M8/8 1.5 2 2.5 3 3.5 FPX 3500V , (A2.s) (mOhm) (°C/W) 18 2 15 2.4 14 FPX66N0105J- 60 22 8 30 1.2 , (A2.s) Irms max (A) (mOhm) (°C/W) 18 1 15 3 14 FPX66P0504J- 60 22 3 20 2.3 10.5 FPX86P0105J- 5 60 22 7 30 1.5 6.1 FPX86P0155J
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GTO thyristor Application notes FPX86Y1254J GTO thyristor Thomson-CSF THYRISTOR 100 amp 1000 volt GTO Thomson-CSF passive components

ferrinox

Abstract: Thomson-CSF ferrites 1.2 50 ± 1.5 63 ± 2 2.4 ± 0.1 3.8 ± 0.15 6 ± 0.2 9 ± 0.4 9.6 ± 0.3 10 ± 0.35 15 ± 0.45 17.6 ± 0.55 19 ± 0.6 23 ± 0.5 24 ± 0.7 15 ± 0.5 38 ± 1.2 1.6 ± 0.15 2.5 ± 0.15 4 ± 0.15 5 ± 0.3 6.3 ± 0.2 7 ± 0.4 10 ± 0.3 19 ± 0.7 12.5 ± 0.4 15 ± 0.5 16 ± 0.5 10 ± 0.5 25 ± 0.8 a , ± 0.43 (.870 ± .014) 25.4 ± 0.5 (1 ± 0.19) 38.1 ± 0.76 (1.5 ± .029) 38.1 ± 0.76 (1.5 ± .029 , ± 0.2 7.9 ± 0.25 9.95 ± 0.15 9.5 ± 0.25 16 ± 0.25 15 ± 0.2 14.4 ± 0.25 c mm d mm f
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ferrinox Thomson-CSF ferrites thomson ferrites 100b choke THOMSON-CSF toroid PRODUCTS 1606A T-0400A T-0630A T-1000A T-1400A T-1600A T-2000B

Thomson-CSF capacitors

Abstract: Thomson-CSF POLYESTER capacitors 5.4 5.5 1.5 1.5 1.5 1.5 1.5 1.5 2 2 2.5 3 2.5 3.1 3,6 4.5 4.3 5.2 3.8 4.7 5.2/4.1 5.3 Capacitance , 0.68 1.0 1.5 2.2 3.3 4.7 1812 (A1) 1812 (A1 ) 1812 (A1 ) 1 8 1 2 (A1) 18 12(A1) 1812 (A1) 1812 (A1 , 1812 2220 2824 4540 5045 5460 A 4.0 5.9 7.0 11.2 12.4 16.2 B 1.5 1.9 2.5 3.1 3.5 3.6 C 3.5 4.5 5.7 9.2 , Code 4 C 6 7 4 8 7 9 D 10 0 11 3 H -12 3 13 4 ; 14 j 5 1 F 15 - 16 - 1 0 , (39 2 )6 6 0 15 510 F a x : (39 2 )6 6 0 15 6 77 INDIA THOMSON-CSF PASSIVE COMPONENTS ASIA Ltd in
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Thomson-CSF POLYESTER capacitors Thomson-CSF film capacitors THOMD004

thomson image intensifier

Abstract: Thomson-CSF semiconductor Image-to-register gate clock 3, 2 +L1. *2L Readout register clocks 19 Reset clock 5, 15 VDD1. vDD2 Output , . 10. 17. _.0 V (ground) - pins : 5. 15 , output gate bias VGS 1.3 1.5 1.7 V Note 1: vss = 0 V requires that the drive clocks, loaded by the , Min Typ Max Image zone clocks during integration period *3P *4P 9 0.0 1.5 10 0.3 1.8 11 0.5 2.0 V V , 0.0 1.5 9 0.3 1.8 10 0.5 2.0 11 V V V Image zone clocks during transfer period (4>p) Low (
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TH7883AVCBF TH7883AGCCQ-A TH7883AGCCNQA thomson image intensifier Thomson-CSF semiconductor 576x384 TH7883A D0021 0DG2172 TH7883AVCH TH7S83AVCHN

A2H4

Abstract: S637T 18 V - 0.3 V to + 15 V 0 V (ground) -12 V to +3 V -55"C to + I50*C (*) -40" C to +85'C , 47 1.3 13 8 1.5 14 10 1.7 14.5 12 Unit REMARK Max. 19.5 14.5 V V V KQ V V V See note 1 See note 1 , a I ij S T2 2 2m S TO = 15 ps PI_ 4>P2_ O P B =
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A2H4 S637T 7395N 7395NVR-NQB THX7395N 739SNVR-NQB 7395NVRSNQB 7395NVRRNQB

27C1024D

Abstract: 1 5 15 250 + 150 + 300 Unit V V V V V V mA mA mW °C °C Stresses above those listed under , 10% Symbol Alt Parameter Test conditions ­12 27C1024 ­15 ­20/­25 Unit Min Max Min Max , only, not 100 % tested. 8/21 9/21 10/21 11/21 12/21 13/21 14/21 15/21 , ) xx = 10 (Tacc = 100 ns) xx = 12 (Tacc = 120 ns) xx = 15 (Tacc = 150 ns) xx = 20 (Tacc = 200 ns) xx =
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27C1024D

GSM 300

Abstract: Thomson-CSF semiconductor -L10070 ATHENA AN35 V20047/R27-7 8-L10070 ATHENA AN21 V20047/R27-7 8-L100- 15 10 5 0 2 4 6 8 , simu (dBm) PAE % 28,00 Pout Gain 30,00 Gain simu dB h (%) PAE simu (%) 15,00 P , =353°K VC=3.4V 380-430 440-490 3.9 15 34.5 40 25 30 50 298 31.5 31.5 A Company of : EADS , : EADS Deutschland GmbH THOMSON-CSF UMS United Monolithic Semiconductors T 1.5 15 , (dB) 35 -20 S21 (dB) VC = 3.9 V VB1 = 2 V VB2 = 1.3 V 15 Linear simulations Small
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GSM 300 GMSK gsm THOMSON-CSF MICROWAVE TRANSISTORS Thomson-CSF amplifier athena AC52

68C000

Abstract: THOMSON-CSF PRODUCTS TS68C000 LOW POWER HCMOS 16/32 BIT MICROPROCESSOR April 1999 1/38 TS68C000 2/38 TS68C000 3/38 TS68C000 4/38 TS68C000 5/38 TS68C000 6/38 TS68C000 7/38 TS68C000 8/38 TS68C000 9/38 TS68C000 10/38 TS68C000 11/38 TS68C000 12/38 TS68C000 13/38 TS68C000 14/38 TS68C000 15/38 TS68C000 16/38 TS68C000 17/38 TS68C000 18/38 TS68C000 19/38 TS68C000 20/38 TS68C000 21/38 TS68C000 22/38
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68C000 CERAMIC LCCC 68 68C000DESC MIL-M-38510 DSTS68C000T/0499

THOMSON-CSF CCD

Abstract: pixel clock generator ttl data bus 1.2 - Outputs Symbol OEb AO - A14 INHIB Designation Output enable 15 bit address bus Sampling , correction memory 15 16 17 18 19 20 21 23 24 25 26 27 28 29 30 AO A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11
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THOMSON-CSF CCD pixel clock generator ttl THOMSOM 000S3S

THx 208

Abstract: 53lt V 9 0J 9.5 0.8 V V Typical input capacitance, 15 nF See figure 11 Typical input capacitance 15.5 , see fig. 15 Note 2 Note 3 Note 4 Note 5 Note 6 Note 7 Note 8 Note 9 Note I : Pixel saturation , Glass window thiclaness : 1.5 ± 0.1 mm (antireflective coating with 400 >700 run transmission : 99 %
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THx 208 53lt

28 PIN LEADLESS ceramic CHIP CARRIER x-ray

Abstract: tio n : 1.5 W. 550 MHz large signal input bandwidth. -5 5 ° C / +125°C specified. Overflow b it , Unit V V - vrefs - 1 .5 to 1.5 1/2VREF V|N + V r e f *o - V r e f CLK, CLKB dvee V 2.2 , - 5 .7 - 5 .2 - 5 .2 270 1.5 30 V V 33 1.2 °C/W °C/W I, D II I, D II IV 0.1 0.15 , MHz Fin = 1-5 MHz Fin Fin Fjn Fin = = = = 1 10 100 196 MHz MHz MHz MHz III III III III D III III , Total harmonie distorsion (THD) Fs = Fin = 1.5 MHz MHz Effective number of bits Fs = 600 MHz
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28 PIN LEADLESS ceramic CHIP CARRIER x-ray TS8376 0D01777 DDD177

daimlerchrysler

Abstract: Thomson-CSF . GaAs IC 99 / 15 Output Power port1 ( dBm ) MVDS Frequency generator Vd=3,5V Vg1=Vg2=-0,8V Vg3 , -10 -10 0 0.5 1 1.5 2 2.5 3 3.5 4 39.5 Conv. GAIN ( dB ) vs P_RF , -17 -15 -13 -11 -9 -7 -5 -3 -1 1 3 5 Output Power ( dBm ) vs P_IF , Frequency ( GHz ) Output Power versus Input Power ( dBm ) 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 20 15 10 5 -5 -10 30 32 34 36 38 Benefit from European Quality
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daimlerchrysler telefunken TEMIC video 1.2 ghz transceiver ic

transistor A4t 45

Abstract: thomson ferrites 0.35 8 ± 0.4 A4TE2000C 6650 A4T-2000C 6650 25 ± 0.75 15 ± 0.45 10 ± 0.3 A4TE2500A 6000 A4T-2500A 6000 25 ± 0.75 15 ± 0.45 15 ± 0.5 A4TE2500B 8400 A4T , -2000C > 1600 25 ± 0.75 15 ± 0.45 10 ± 0.3 B2TE2500A > 1450 B2T-2500A > 1450 25 ± 0.75 15 ± 0.45 15 ± 0.5 B2TE2500B > 2200 B2T-2500B > 2200 31.5 ± 1 19 ± 0.6 12.5 ± , COMPONENTS Viale Fulvio Testi, 117 20092 CINISELLO BALSAMO (MILANO) Tel. : (39 2) 660 15 510 Fax : (39) 2
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A4T-1000A transistor A4t 45 transistor A4t A4t 65 d 6650 diode a4t transistor A4t 35 A4TE1000A A4TE1000C A4T-1000C A4TE1270A A4T-1270A

PFZD 36

Abstract: b527 50 8,2 9,1 10,1 11,1 1 15,3 327 19,7 3045 7,3 BZW 50-10 5 10 11,1 12,4 13,6 1 18,8 266 23,4 2564 7,8 BZW 50-12 BZW 50-12B 5 12 13,3 14,8 16,3 1 22 227 28 2143 8,4 BZW 50-15 BZW 50-15B 5 15 16,6 , 8,55 9,50 10 10,5 1 15,4 97 20 900 100 100 PFC 9V4 10 9,40 10,5 11 11,6 1 16,5 91 21,5 837 100 100 , 100 100 PFC 13 5 12,8 14,3 15 15,8 1 21,2 71 27,6 652 100 100 PFC 14 5 13,6 15,2 16 16,8 1 23,2 65 30 600 100 100 PFC 15 5 15,3 17,1 18 18,9 1 25,2 59,5 33 545 100 100 PFC 17 5 17,1 19 20 21 1 27
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50-39B PFZD 36 b527 400PFC 5KW PFC 27A TRANSIL 50-8V2 50-18B 50-33B 50-56B CB-257

Thomson-CSF ceramic capacitor

Abstract: Thomson-CSF inductance : 15 nH . Test voltage between terminals : 1.5 x Undc 10 s . Withstanding voltage between , 4.5 Q max kV ar 10 8 7 Rs mOhm 1.92.2 2.8 1.5 Ls nH 5 5 5 Rth °C / W 4.6 , Reference FAV36R0184K-FAV36R0154K- Urms : 650 V I rms max A 15 12 10 5 Reference , . : (39 2) 660 15 510 Fax : (39) 2) 660 15 677 Film capacitors THOMSON-CSF PASSIVE COMPONENTS ASIA
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thomson polypropylene film capacitors 780 AC semiconductors cross reference FAV36R0184K Thomson-CSF power capacitors Thomson-csf "ceramic capacitor"
Abstract: TS68020 HCMOS 32-BIT VIRTUAL MEMORY MICROPROCESSOR September 1999 1/32 TS68020 2/32 TS68020 3/32 TS68020 4/32 TS68020 5/32 TS68020 6/32 TS68020 7/32 TS68020 8/32 TS68020 9/32 TS68020 10/32 TS68020 11/32 TS68020 12/32 TS68020 13/32 TS68020 14/32 TS68020 15/32 TS68020 16/32 TS68020 17/32 TS68020 18/32 TS68020 19/32 TS68020 20/32 TS68020 21/32 TS68020 22/32 Thomson-CSF
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DSTS68020/0999

THOMSON-CSF PRODUCTS

Abstract: TS68882 CMOS ENHANCED FLOATING-POINT COPROCESSOR October 2000 1/36 TS68882 2/36 TS68882 3/36 TS68882 4/36 TS68882 5/36 TS68882 6/36 TS68882 7/36 TS68882 8/36 TS68882 9/36 TS68882 10/36 TS68882 11/36 TS68882 12/36 TS68882 13/36 TS68882 14/36 TS68882 15/36 TS68882 16/36 TS68882 17/36 TS68882 18/36 TS68882 19/36 TS68882 20/36 TS68882 21/36 TS68882 22/36
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DSTS68882T/1000
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