TZA3011A TZA3011B TZA3011 HBCC32 TZA3011AVH TZA3011BVH TZA3011UH MGT888 MGT889 - Datasheet Archive

 

DATA SHEET TZA3011A; TZA3011B 30 Mbits/s up to 3.2 Gbits/s A-rateTM laser drivers Product specification Supersedes data of 2002

 

INTEGRATED CIRCUITS DATA SHEET TZA3011A TZA3011A; TZA3011B TZA3011B 30 Mbits/s up to 3.2 Gbits/s A-rateTM laser drivers Product specification Supersedes data of 2002 May 23 2002 Nov 06 Philips Semiconductors Product specification 30 Mbits/s up to 3.2 Gbits/s A-rateTM laser drivers TZA3011A TZA3011A; TZA3011B TZA3011B 11 FEATURES AC CHARACTERISTICS 12 CONTENTS APPLICATION INFORMATION Design equations Bias and modulation currents Average monitor current and extinction ratio Dual-loop control Alarm operating current Alarm monitor current Pulse width adjustment TZA3011A TZA3011A with dual-loop control TZA3011B TZA3011B with dual-loop control TZA3011B TZA3011B with average loop control 1.1 1.2 1.3 General Control features Protection features 2 APPLICATIONS 3 GENERAL DESCRIPTION 4 ORDERING INFORMATION 5 BLOCK DIAGRAM 6 PINNING 12.1 12.1.1 12.1.2 12.1.3 12.1.4 12.1.5 12.1.6 12.2 12.3 12.4 7 FUNCTIONAL DESCRIPTION 13 BONDING PAD LOCATIONS 7.1 7.2 7.3 7.4 7.5 7.6 7.7 7.8 7.9 7.10 7.11 Data and clock input Retiming Pulse width adjustment Modulator output stage Dual-loop control Average loop control Direct current setting Soft start Alarm functions Enable Reference block 14 PACKAGE OUTLINE 15 SOLDERING 15.1 Introduction to soldering surface mount packages Reflow soldering Wave soldering Manual soldering Suitability of surface mount IC packages for wave and reflow soldering methods 16 DATA SHEET STATUS 8 LIMITING VALUES 17 DEFINITIONS 9 THERMAL CHARACTERISTICS 18 DISCLAIMERS 10 DC CHARACTERISTICS 2002 Nov 06 15.2 15.3 15.4 15.5 2 Philips Semiconductors Product specification 30 Mbits/s up to 3.2 Gbits/s A-rateTM laser drivers 1 1.1 TZA3011A TZA3011A; TZA3011B TZA3011B FEATURES 1.3 Protection features · Alarm function on operating current General · A-rateTM(1) from 30 Mbits/s to 3.2 Gbits/s · Alarm function on monitor current · Bias current up to 100 mA · Enable function on bias and modulation currents · Modulation current up to 100 mA · Soft start on bias and modulation currents. · Rise and fall times typical 80 ps · Jitter below 20 ps (peak-to-peak value) 2 APPLICATIONS · Modulation output voltage up to 2 V dynamic range · SDH/SONET optical transmission systems · 1.2 V minimum voltage on the modulation output pin and 0.4 V minimum voltage on pin BIAS · High current drivers for converters · High current drivers for high frequencies. · Retiming function via external clock with disable option · Pulse width adjustment function with disable option 3 · Positive Emitter Coupled Logic (PECL), Low Voltage Positive Emitter Coupled Logic (LVPECL) and Current-Mode Logic (CML) compatible data and clock inputs The TZA3011 TZA3011 is a fully integrated laser driver for optical transmission systems with data rates up to 3.2 Gbits/s. The TZA3011 TZA3011 incorporates all the necessary control and protection functions for a laser driver application with very few external components required and low power dissipation. The dual-loop controls the average monitor current in a programmable range from 150 µA to 1300 µA and the extinction ratio in a programmable range from 5 to 15 (linear scale). · Internal common mode voltage available for AC-coupled data and clock inputs and for single-ended applications · 3.3 V supply voltage · TZA3011A TZA3011A: AC-coupled laser for 3.3 V laser supply · TZA3011B TZA3011B: DC-coupled laser for 3.3 V and 5 V laser supply. 1.2 GENERAL DESCRIPTION The design is made in the Philips BiCMOS RF process and is available in a HBCC32 HBCC32 package or as bare die. The TZA3011A TZA3011A is intended for use in an application with an AC-coupled laser diode with a 3.3 V laser supply voltage. The TZA3011B TZA3011B is intended for use in an application with a DC-coupled laser diode for both 3.3 and 5 V laser supply voltages. Control features · Dual-loop control for constant and accurate optical average power level and extinction ratio (up to 2.7 Gbits/s) · Optional average power loop control (up to 3.2 Gbits/s) · Optional direct setting of modulation and bias currents. (1) A-rate - is a trademark of Koninklijke Philips Electronics N.V. 4 ORDERING INFORMATION PACKAGE TYPE NUMBER NAME TZA3011AVH TZA3011AVH HBCC32 HBCC32 TZA3011BVH TZA3011BVH TZA3011UH TZA3011UH 2002 Nov 06 - DESCRIPTION plastic heatsink bottom chip carrier; 32 terminals; body 5 × 5 × 0.65 mm bare die; 2 560 × 2 510 × 380 µm 3 VERSION SOT560-1 - Philips Semiconductors Product specification 30 Mbits/s up to 3.2 Gbits/s A-rateTM laser drivers 5 TZA3011A TZA3011A; TZA3011B TZA3011B BLOCK DIAGRAM handbook, full pagewidth AVR 32 (57) MODOUT GNDCCB ER 31 (54) MODIN 30 (55) (53) BIASOUT 29 (52) BIASIN 28 (50) ACDC MON 27 (49) 26 (48) (46) (44, 45) 25 2 (3, 4) VCCD 100 µA 100 µA 1 (1, 2) VCCA CURRENT CONVERSION Ione dual loop: IER = 1.2 V/RER IBIAS (43) 24 VCCO BIAS V/I 100 mA/V average loop: ER = GND (56) 23 Izero GND V/I 100 mA/V CONTROL BLOCK IMON 100 TEST GNDRF 100 4 (6) 5 (11) MUX 20 k CINQ GND GNDESD ALRESET PRE AMP 18 (28, 33, 35, 36, 42) FF 20 k 100 (27) 17 C LA LAQ LAQ GND GNDO PWA disable retiming: VCIN, VCINQ < 0.3 V 20 k TZA3011A TZA3011A TZA3011B TZA3011B (14, 47) VCCD - 1.32 V 9 (15) 10 k 1.4 V 3.3 V 1.4 V 10 (16) ENABLE (20, 22, 34, 38, 54) Imod/1500 + ALARM OPERATING CURRENT R ALARM MONITOR CURRENT Q R V AND I REFERENCE Q (26) enable (17) GNDDFT n.c. Iav(MON)/12.5 IBIAS /750 20 k 11 (18) 12 (19) ALOP ALMON The numbers in parenthesis refer to the bare die version Fig.1 Block diagram. 2002 Nov 06 POST AMP Imod 7 (13) 8 PULSE WIDTH ADJUST LA D 6 (12) (7, 8, 9, 10, 26) (37, 39) 21 (29, 30) 19 20 k DINQ (40, 41) 22 (31, 32) 20 3 (5) DIN CIN 100 4 13 (21) MAXOP 14 (23) 15 (24) 16 (25) VTEMP MAXMON RREF GNDRF MGT888 MGT888 Philips Semiconductors Product specification 30 Mbits/s up to 3.2 Gbits/s A-rateTM laser drivers 6 TZA3011A TZA3011A; TZA3011B TZA3011B PINNING SYMBOL PIN PAD(1) DESCRIPTION substrate common ground plane for VCCA, VCCD, VCCO, RF and I/O; must be connected to ground GND die pad VCCA 1 1 analog supply voltage VCCA - 2 analog supply voltage VCCD 2 3 digital supply voltage VCCD - 4 digital supply voltage DIN 3 5 non-inverted data input (RF input) DINQ 4 6 inverted data input (RF input) GNDRF - 7 ground GNDRF - 8 ground GNDRF - 9 ground GNDRF - 10 ground TEST 5 11 test pin or test pad; must be connected to ground CIN 6 12 non-inverted clock input (RF input) CINQ 7 13 inverted clock input (RF input) GND 8 - ground GNDESD - 14 ground ALRESET 9 15 alarm reset input; resets ALMON and ALOP alarms ENABLE 10 16 enable input for modulation and bias current GNDDFT - 17 ground ALOP 11 18 alarm output on operating current (open-drain) ALMON 12 19 alarm output on monitor diode current (open-drain) i.c. - 20 internally connected MAXOP 13 21 threshold level input for alarm on operating current i.c. - 22 internally connected VTEMP 14 23 temperature dependent voltage output source MAXMON 15 24 threshold level input for alarm on monitor diode current RREF 16 25 reference current input; must be connected to ground with an accurate (1%) 10 k resistor GNDRF - 26 ground PWA 17 27 pulse width adjustment input GND 18 - ground GNDO - 28 ground LAQ 19 29 inverted laser modulation output (RF output); output for dummy load LAQ - 30 inverted laser modulation output (RF output); output for dummy load LAQ 20 31 inverted laser modulation output (RF output); output for dummy load LAQ - 32 inverted laser modulation output (RF output); output for dummy load GNDO - 33 ground i.c. - 34 internally connected GNDO - 35 ground 2002 Nov 06 5 Philips Semiconductors Product specification 30 Mbits/s up to 3.2 Gbits/s A-rateTM laser drivers TZA3011A TZA3011A; TZA3011B TZA3011B PIN PAD(1) GNDO - 36 ground LA 21 37 non-inverted laser modulation output (RF output); output for laser i.c. - 38 internally connected LA - 39 non-inverted laser modulation output (RF output); output for laser LA 22 40 non-inverted laser modulation output (RF output); output for laser LA - 41 non-inverted laser modulation output (RF output); output for laser GND 23 - ground GNDO - 42 ground SYMBOL DESCRIPTION BIAS 24 43 current source output for the laser bias current VCCO 25 44 supply voltage for the output stage and the laser diode VCCO - 45 supply voltage for the output stage and the laser diode ACDC - 46 AC or DC coupled laser; note 2 GNDESD - 47 ground MON 26 48 input for the monitor photo diode (RF input) BIASIN 27 49 input for the bias current setting BIASOUT 28 50 output of the control block for the bias current GNDCCB - 51 ground MODIN 29 52 input for the modulation current setting GNDCCB - 53 ground i.c. - 54 internally connected MODOUT 30 55 output of the control block for the modulation current ER 31 56 input for the optical extinction ratio setting AVR 32 57 input for the optical average power level setting Notes 1. All ground pads must be connected to ground. 2. ACDC pad must be left unconnected for AC-coupling applications. For DC-coupling applications, connect this pad to ground. 2002 Nov 06 6 Philips Semiconductors Product specification 30 Mbits/s up to 3.2 Gbits/s A-rateTM laser drivers AVR ER MODOUT MODIN BIASOUT BIASIN MON VCCO TZA3011A TZA3011A; TZA3011B TZA3011B 32 31 30 29 28 27 26 25 handbook, full pagewidth VCCA 1 VCCD 2 24 BIAS DIN 3 23 GND DINQ 4 22 LA 21 LA TZA3011A TZA3011A TZA3011B TZA3011B 19 LAQ GND 8 18 GND 17 PWA 9 10 11 12 13 14 15 16 RREF 7 MAXMON CINQ VTEMP LAQ MAXOP 20 ALMON 6 ALOP CIN ENABLE 5 ALRESET TEST MGT889 MGT889 Fig.2 Pin configuration. 7 7.1 FUNCTIONAL DESCRIPTION 7.3 Data and clock input The on-duration of the laser current can be adjusted from -100 to +100 ps. The adjustment time is set by resistor RPWA. The maximum allowable capacitive load on pin PWA is 100 pF. Pulse width adjustment is disabled when pin PWA is short-circuited to ground. The TZA3011 TZA3011 operates with differential Positive Emitter Coupled Logic (PECL), Low Voltage Positive Emitter Coupled Logic (LVPECL) and Current-Mode Logic (CML) data and clock inputs with a voltage swing from 100 mV to 1 V (p-p). It is assumed that both the data and clock inputs carry a complementary signal with the specified peak-to-peak value (true differential excitation). 7.4 The modulation current switches between the LA and LAQ outputs. For a good RF performance the inactive branch carries a small amount of the modulation current. If VDIN > VDINQ, the modulation current is sunk by the LA pins and corresponds to an optical `one' level of the laser. Retiming The LA output is optimized for the laser allowing a 2 V dynamic range and a 1.2 V minimum voltage. The LAQ output is optimized for the dummy load. The retiming function synchronizes the data with the clock to improve the jitter performance. The data latch switches on the rising edge of the clock input. The retiming function is disabled when both clock inputs are below 0.3 V. The output stage of the TZA3011A TZA3011A is optimized for AC-coupled lasers and the output stage of the TZA3011B TZA3011B is optimized for DC-coupled lasers. At start-up the initial polarity of the laser is unknown before the first rising edge of the clock input. 2002 Nov 06 Modulator output stage The output stage is a high-speed bipolar differential pair with typical rise and fall times of 80 ps and with a modulation current source of up to 100 mA when the LA pins are connected to VCCO. The circuit generates an internal common mode voltage for AC-coupled data and clock inputs and for single-ended applications. 7.2 Pulse width adjustment The BIAS output is optimized for low voltage requirements (0.4 V minimum for a 3.3 V laser supply; 0.8 V minimum for a 5 V laser supply). 7 Philips Semiconductors Product specification 30 Mbits/s up to 3.2 Gbits/s A-rateTM laser drivers 7.5 TZA3011A TZA3011A; TZA3011B TZA3011B 7.9 Dual-loop control The TZA3011 TZA3011 features two alarm functions for the detection of excessive laser operating current and monitor diode current due to laser ageing, laser malfunctioning or a too high laser temperature. The alarm threshold levels are programmed by a resistor or a current source. In the TZA3011A TZA3011A, for the AC-coupled application, the operating current is equal to the bias current. In the TZA3011B TZA3011B, for the DC-coupled application, the operating current equals the bias current plus half of the modulation current. The TZA3011 TZA3011 incorporates a dual-loop control for a constant, accurate and temperature-independent control of the optical average power level and the extinction ratio. The dual-loop guarantees constant optical `one' and `zero' levels which are independent of the laser temperature and the laser age. The dual-loop operates by monitoring the current of the monitor photodiode which is directly proportional to the laser emission. The `one' and `zero' current levels of the monitor diode are captured by the detector of the dual-loop control. The pin MON for the monitor photodiode current is an RF input. 7.10 7.11 The maximum allowable capacitive load on pins AVR, ER, BIASOUT and MODOUT is 100 pF. Average loop control The reference voltage on the setting pins (MAXOP, MAXMON, PWA, ER and AVR) is buffered and derived from the band gap voltage. The output voltage on pin VTEMP reflects the junction temperature of the TZA3011 TZA3011, the temperature coefficient of VVTEMP equals -2.2 mV/K. Direct current setting The TZA3011 TZA3011 can also operate in open-loop mode with direct setting of the bias and modulation currents. The bias and modulation current sources are transconductance amplifiers and the output currents are determined by the BIASIN and MODIN voltages respectively. The bias current source has a bipolar output stage with minimum output capacitance for optimum RF performance. 7.8 Soft start At power-up the bias and modulation current sources are released when VCCA > 2.7 V and the reference voltage has reached the correct value of 1.2 V. The control loop starts with minimum bias and modulation current at power-up and when the device is enabled. The current levels increase until the MON input current matches the programmed average level and, in the case of dual-loop control, the extinction ratio. 2002 Nov 06 Reference block The reference voltage is derived from a band gap circuit and is available at pin RREF. An accurate (1%) 10 k resistor has to be connected to pin RREF to provide the internal reference current. The maximum capacitive load on pin RREF is 100 pF. The average power control loop maintains a constant average power level of the monitor current over temperature and lifetime of the laser. The average loop control is activated by short-circuiting pin ER to ground. 7.7 Enable A LOW level on the enable input disables the bias and modulation current sources: the laser is off. A HIGH level on the enable input or an open enable input switches both current sources on: the laser is operational. The average monitor current is programmable over a wide current range from 150 to 1300 µA for both the dual-loop control and the average loop control. The extinction ratio is programmable from 5 to 15. 7.6 Alarm functions 8 Philips Semiconductors Product specification 30 Mbits/s up to 3.2 Gbits/s A-rateTM laser drivers TZA3011A TZA3011A; TZA3011B TZA3011B 8 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134); all voltages are referenced to ground; positive currents flow into the IC. SYMBOL PARAMETER CONDITION MIN. MAX. UNIT VCCD digital supply voltage -0.5 +3.5 V VCCA analog supply voltage -0.5 +3.5 V VCCO output stage supply voltage Vo(LA) output voltage at pin LA -0.5 +3.5 V 5 V laser supply (TZA3011B TZA3011B only) -0.5 +5.3 V TZA3011A TZA3011A; VCCO = 3.3 V 4.5 V 3.3 V laser supply 1.2 TZA3011B TZA3011B; VCCO = 3.3 V TZA3011A TZA3011A; VCCO = 3.3 V 1.8 4.5 V 1.6 4.5 V 2.0 5.2 V TZA3011A TZA3011A; VCCO = 3.3 V 0.4 3.6 V 0.4 3.6 V TZA3011B TZA3011B; VCCO = 5 V 0.8 4.1 V analog inputs and outputs -0.5 VCCA + 0.5 V digital inputs and outputs -0.5 VCCD + 0.5 V MAXOP, MAXMON, RREF, PWA, ER and AVR -1.0 0 mA VTEMP, BIASOUT and MODOUT -1.0 +1.0 mA ALOP, ALMON and MON In V TZA3011B TZA3011B; VCCO = 3.3 V Vn V 4.5 TZA3011B TZA3011B; VCCO = 5 V VBIAS 4.1 1.2 TZA3011B TZA3011B; VCCO = 3.3 V Vo(LAQ) 0.8 TZA3011B TZA3011B; VCCO = 5 V 0 5.0 mA output voltage at pin LAQ bias voltage voltage on other input and output pins input current on pins Tamb ambient temperature -40 +85 °C Tj junction temperature -40 +125 °C Tstg storage temperature -65 +150 °C 9 THERMAL CHARACTERISTICS In compliance with JEDEC standards JESD51-5 JESD51-5 and JESD51-7 JESD51-7. SYMBOL CONDITIONS VALUE UNIT thermal resistance from junction to ambient 4 layer printed circuit board in still air with 9 plated vias connected with the heatsink and the first ground plane in the PCB 35 K/W HBCC32 HBCC32 die pad soldered to PCB Rth(j-a) PARAMETER 60 K/W 2002 Nov 06 9 Philips Semiconductors Product specification 30 Mbits/s up to 3.2 Gbits/s A-rateTM laser drivers TZA3011A TZA3011A; TZA3011B TZA3011B 10 DC CHARACTERISTICS Tamb = -40 to +85 °C; Rth(j-a) = 35 K/W; Ptot = 400 mW; VCCA = 3.14 to 3.47 V; VCCD = 3.14 to 3.47 V; VCCO = 3.14 to 3.47 V; RAVR = 7.5 k; RER = 62 k; RMODIN = 6.2 k; RBIASIN = 6.8 k; RPWA = 10 k; RRREF = 10 k; RMAXMON = 13 k; RMAXOP = 20 k; positive currents flow into the IC; all voltages are referenced to ground; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Supplies: pins VCCA, VCCD and VCCO VCCA analog supply voltage 3.14 3.3 3.47 V VCCD digital supply voltage 3.14 3.3 3.47 V VCCO RF output supply voltage 3.14 3.3 3.47 V 4.75 5.0 5.25 V ICCA analog supply current 30 40 50 mA ICCD digital supply current 35 45 55 mA ICCO RF output supply current 3.3 V laser supply 8 15 25 mA 5 V laser supply - 20 - mA 3.3 V laser supply 5 V laser supply pins LA and LAQ open-circuit Pcore core power dissipation core excluding output currents Io(LA), Io(LAQ) and IBIAS; PWA and retiming off - 264 - mW Ptot total power dissipation VBIAS = 3.3 V; IBIAS = 20 mA; Imod = 16 mA; note 1 330 400 500 mW 1000 mV Data and clock inputs: pins DIN and CIN Vi(p-p) input voltage swing (peak-to-peak value) Vi(DIN) = (VCCD - 2 V) to VCCD; Vi(CIN) = (VCCD - 2 V) to VCCD 100 - Vint(cm) internal common mode voltage AC-coupled inputs - VCCD - 1.32 - V VIO input offset voltage note 2 -10 0 +10 mV Zi(dif) differential input impedance 80 100 125 Zi(cm) common mode input impedance 8 10 13 k Vi(CIN)(dis) input voltage for disabled retiming VCIN = VCINQ - - 0.3 V Monitor photodiode input: pin MON Vi(MON) input voltage IMON = 50 to 2500 µA 0.9 1.1 1.3 V Zi(MON) input impedance IMON = 50 to 2500 µA - 27 - linear scale - 5 7 - dB scale - 7 8.5 dB Extinction ratio setting for dual-loop control: pins MON and ER ERmin 2002 Nov 06 low extinction ratio setting dual-loop set-up; IER > -30 µA; note 3 10 Philips Semiconductors Product specification 30 Mbits/s up to 3.2 Gbits/s A-rateTM laser drivers SYMBOL ERmax TZA3011A TZA3011A; TZA3011B TZA3011B PARAMETER CONDITIONS MIN. TYP. MAX. UNIT high extinction ratio setting dual-loop set-up; IER < -10 µA; note 3 linear scale 13 15 - - dB scale 11 11.8 - dB ERacc relative accuracy of ER temperature and VCCA variations; ER = 10; AVR = 550 µA -10 - +10 % Vref(ER) reference voltage on pin ER IER = -35 to -5 µA; CER < 100 pF 1.15 1.20 1.25 V IER current sink on pin ER -35 - -5 µA Average setting for dual-loop control and average loop control: pins MON and AVR Iav(MON)(low) low average monitor current setting IAVR > -280 µA - 150 µA average loop (pin ER to GND) - - 150 µA 1200 1300 - µA average loop (pin ER to GND) 1200 Iav(MON)(max) - 1300 - µA dual-loop (ER = 5) maximum average monitor IAVR = -15.0 µA current setting dual-loop (ER = 5) Iav(MON) relative accuracy of average current on pin MON temperature and VCCA variations; ER = 10; AVR = 550 µA -10 - +10 % Vref(AVR) reference voltage on pin AVR IAVR = -250 to -15 µA; CAVR < 100 pF 1.15 1.20 1.25 V Isink(AVR) current sink on pin AVR -280 - -15 µA Control loop modulation output: pin MODOUT Isource(MODOUT) source current VMODOUT = 0.5 to 1.5 V; CMODOUT < 100 pF - - -200 µA Isink(MODOUT) VMODOUT = 0.5 to 1.5 V; CMODOUT < 100 pF 200 - - µA Isource(BIASOUT) source current VBIASOUT = 0.5 to 1.5 V; CBIASOUT < 100 pF - - -200 µA Isink(BIASOUT) VBIASOUT = 0.5 to 1.5 V; CBIASOUT < 100 pF 200 - - µA VBIAS = VCCO = 3.3 V 90 110 125 mA/V VBIAS = 4.1 V; VCCO = 5.0 V 95 110 130 mA/V sink current Control loop bias output: pin BIASOUT sink current Bias current source: pins BIASIN and BIAS gm(bias) bias transconductance VBIASIN = 0.5 to 1.5 V Isource(BIASIN) source current at pin BIASIN VBIASIN = 0.5 to 1.5 V -110 -100 -95 µA IBIAS(max) maximum bias current VBIASIN = 1.8 V 100 - - mA IBIAS(min) minimum bias current VBIASIN = 0 to 0.4 V - 0.2 0.4 mA IBIAS(dis) bias current at disable VENABLE < 0.8 V - - 30 µA 2002 Nov 06 11 Philips Semiconductors Product specification 30 Mbits/s up to 3.2 Gbits/s A-rateTM laser drivers SYMBOL VBIAS TZA3011A TZA3011A; TZA3011B TZA3011B PARAMETER CONDITIONS MIN. TYP. MAX. UNIT output voltage on pin BIAS normal operation VCCO = 3.3 V 0.4 - 3.6 V VCCO = 5 V 0.8 - 4.1 V VLA = VLAQ = VCCO = 3.3 V 78 90 105 mA/V VLA = VLAQ = VCCO = 4.5 V 80 95 110 mA/V VMODIN = 0.5 to 1.5 V -110 -100 -95 µA VMODIN = 1.8 V; VLA = VCCO = 3.3 V; note 4 100 - - mA - 5 6 mA - - 0.8 mA - - 2 mA 80 100 125 - - 200 µA 1.6 - - V 1.2 - - V TZA3011B TZA3011B; VCCO = 5 V 1.6 - - V Modulation current source: pin MODIN gm(mod) Isource(MODIN) modulation transconductance source current at pin MODIN VMODIN = 0.5 to 1.5 V Modulation current outputs: pins LA Io(LA)(max)(on) maximum laser modulation output current at LA on Io(LA)(min)(on) minimum laser modulation VMODIN = 0 to 0.4 V; output current at LA on VLA = VCCO = 3.3 V; note 4 Io(LA)(min)(off) minimum laser modulation VLA = VCCO = 3.3 V; note 4 output current at LA off VMODIN = 0.5 V VMODIN = 1.5 V Zo(LA), Zo(LAQ) output impedance LA and LAQ pins Io(LA)(dis), Io(LAQ)(dis) non-inverted and inverted laser modulation output current at disable Vo(LA)min minimum output voltage at TZA3011A TZA3011A; VCCO = 3.3 V pin LA TZA3011B TZA3011B; VCCO = 3.3 V VENABLE < 0.8 V Enable function: pin ENABLE VIL LOW-level input voltage bias and modulation currents disabled - - 0.8 V VIH HIGH-level input voltage bias and modulation currents enabled 2.0 - - V Rpu(int) internal pull-up resistance 16 20 30 k Alarm reset: pin ALRESET VIL LOW-level input voltage no reset - - 0.8 V VIH HIGH-level input voltage reset 2.0 - - V Rpd(int) internal pull-down resistance 7 10 15 k 2002 Nov 06 12 Philips Semiconductors Product specification 30 Mbits/s up to 3.2 Gbits/s A-rateTM laser drivers SYMBOL TZA3011A TZA3011A; TZA3011B TZA3011B PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Alarm operating current: pins MAXOP and ALOP Vref(MAXOP) reference voltage on pin MAXOP IMAXOP = 10 to 200 µA NMAXOP ratio of Ioper(alarm) and IMAXOP Ioper(alarm) = 7.5 to 150 mA drain voltage at active alarm IALOP = 500 µA 1.2 1.25 VCCO = 3.3 V 700 800 900 VCCO = 5.0 V VD(ALOP)L 1.15 V 750 850 950 0 - 0.4 V V Alarm monitor current: pins MAXMON and ALMON Vref(MAXMON) reference voltage on pin MAXMON IMAXMON = 10 to 200 µA 1.15 1.2 1.25 NMAXMON ratio of IMON(alarm) and IMAXMON IMON(alarm) = 150 to 3000 µA 10 15 20 VD(ALMON)L drain voltage at active alarm IALMON = 500 µA 0 - 0.4 V Reference block: pins RREF and VTEMP VRREF reference voltage RRREF = 10 k (1%); CRREF < 100 pF 1.15 1.20 1.25 V VVTEMP temperature dependent voltage Tj = 25 °C; CVTEMP < 2 nF; note 5 1.15 1.20 1.25 V TCVTEMP temperature coefficient of VVTEMP Tj = -25 to +125 °C; note 5 - -2.2 - mV/K Isource(VTEMP) source current of pin VTEMP - - -1 mA Isink(VTEMP) sink current of pin VTEMP 1 - - mA Notes 1. The total power dissipation Ptot is calculated with VBIAS = VCCO = 3.3 V and IBIAS = 20 mA. In the application VBIAS will be VCCO minus the laser diode voltage which results in a lower total power dissipation. 2. The specification of the offset voltage is guaranteed by design. 3. Any (AVR, ER) settings need to respect IMON > 50 µA and IMON < 2500 µA. Therefore, for large ER settings, minimum/maximum AVR cannot be reached. 100 4. The relation between the sink current Io(LA) and the modulation current Imod is: l o(LA) = I mod × - where 100 + Z L ( LA ) ZL(LA) is the external load on pin LA. The voltage on pin MODIN programmes the modulation current Imod. This current is divided between ZL(LA) and the 100 internal resistor connected to pins LA. When the modulation current is programmed to 100 mA, a typical ZL(LA) of 25 will result in an Io(LA) current of 80 mA, while 20 mA flows via the internal resistor. This corresponds to a voltage swing of 2 V on the real application load. 5. VVTEMP = 1.31 + TCVTEMP × Tj and Tj = Tamb + Ptot × Rth(j-a). 2002 Nov 06 13 Philips Semiconductors Product specification 30 Mbits/s up to 3.2 Gbits/s A-rateTM laser drivers TZA3011A TZA3011A; TZA3011B TZA3011B 11 AC CHARACTERISTICS Tamb = -40 to +85 °C; Rth(j-a) = 35 K/W; Ptot = 400 mW; VCCA = 3.14 to 3.47 V; VCCD = 3.14 to 3.47 V; VCCO = 3.14 to 3.47 V; RAVR = 7.5 k; RER = 62 k; RMODIN = 6.2 k; RBIASIN = 6.8 k; RPWA = 10 k; RRREF = 10 k; RMAXMON = 13 k; RMAXOP = 20 k; positive currents flow into the IC; all voltages are referenced to ground; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT RF path bit rate dual-loop control 0.03 - 2.7 Gbits/s average loop control BR 0.03 - 3.2 Gbits/s JLA(p-p) jitter of pin LA output signal (peak-to-peak value) RL = 25 ; note 1 - - 20 ps tr rise time of voltage on pin LA 20% to 80%; RL = 25 ; Imod = 17 mA; notes 2 and 3 70 85 110 ps tf fall time of voltage on pin LA 80% to 20%; RL = 25 ; Imod = 17 mA; notes 2 and 3 50 70 100 ps tsu(D) data input set-up time 60 - - ps th(D) data input hold time 60 - - ps ten(start) start-up time at enable direct current setting - - 1 µs internal time constant dual-loop control operating currents fully settled 30 - - ms Current control tcint Pulse width adjustment tPWA(min) minimum pulse width adjustment on pins LA RPWA = 6.7 k; CPWA < 100 pF - - -100 ps tPWA pulse width adjustment on pins LA RPWA = 10 k; CPWA < 100 pF - 0 - ps tPWA(max) maximum pulse width adjustment on pins LA RPWA = 20 k; CPWA < 100 pF 80 100 - ps Notes 1. The output jitter specification is guaranteed by design. 2. With a 25 load on the LA pins: Io(LA) = 14 mA when Imod = 17 mA. 3. For high modulation current, tr and tf are impacted by total inductance between the LA pins and the laser connection. 2002 Nov 06 14 Philips Semiconductors Product specification 30 Mbits/s up to 3.2 Gbits/s A-rateTM laser drivers TZA3011A TZA3011A; TZA3011B TZA3011B 12 APPLICATION INFORMATION 12.1 Design equations 12.1.1 handbook, halfpage 105 BIAS AND MODULATION CURRENTS Imod = Io(LA) (mA) The bias and modulation currents are determined by the voltages on pins BIASIN and MODIN. These voltages are applied by the BIASOUT and MODOUT pins for dual-loop control. For average loop control the BIASIN voltage is applied by the BIASOUT pin and the MODIN voltage is applied by an external voltage source or an external resistor RMODIN. gm(mod) = 100 mA/V For direct setting of bias and the modulation current, the BIASIN and MODIN voltages have to be applied by external voltage sources or by RBIASIN and RMODIN external resistors connected on BIASIN and MODIN pins: I o(LA)(min) 5 0 0.5 VMODIN (V) 1.5 MGT891 MGT891 IBIAS = (RBIASIN × 100 µA - 0.5 V) × gm(bias) [mA] LA current when LA output is on. Vo(LA) = VCCO. Imod = (RMODIN × 100 µA - 0.5 V) × gm(mod) + 5 [mA] The bias and modulation current sources operate with an input voltage range from 0.5 to 1.5 V. The output current is at its minimum level for an input voltage below 0.4 V; see Figs 3 and 4. Fig.4 The bias and modulation current sources are temperature compensated and the adjusted current level remains stable over the temperature range. 12.1.2 Modulation current as a function of MODIN voltage. AVERAGE MONITOR CURRENT AND EXTINCTION RATIO The average monitor current Iav(MON) in dual-loop or average loop operation is determined by the source current (IAVR) of the AVR pin. The current can be sunk by an external current source or by an external resistor (RAVR) connected to ground: The bias and modulation currents increase with increasing resistor values for RBIASIN and RMODIN respectively, this allows resistor tuning to start at a minimum current level. V AVR Iav(MON) = 1580 - 5.26 × IAVR =1580 - 5.26 × - [µA] R AVR handbook, halfpage 110 The extinction ratio in dual-loop operation is determined by the source current (IER) of the ER pin. The current can be sunk by an external current source or by an external resistor (RER) connected to ground: I BIAS (mA) gm(bias) = V ER I ER 1 ER = 20 ­ - = 20 ­ - × -2 µA R ER 2 µA 110 mA/V The average monitor current and the extinction ratio as a function of the IAVR and IER current are illustrated in Fig.5. I BIAS(min) 0.2 0 0.5 VBIASIN (V) The average monitor current increases with a decreasing IAVR or increasing RAVR, this allows resistor tuning of RAVR to start at minimum IAVR current level. 1.5 MGT890 MGT890 The formulas used to program AVR and ER are valid for typical conditions; tuning is necessary to achieve good absolute accuracy of AVR and ER values. Fig.3 Bias current as a function of BIASIN voltage. 2002 Nov 06 15 Philips Semiconductors Product specification 30 Mbits/s up to 3.2 Gbits/s A-rateTM laser drivers handbook, full pagewidth TZA3011A TZA3011A; TZA3011B TZA3011B I av(MON) ER (µA) 1500 15 I ER = 20 - ER 2 µA I av(MON) = 1580 - 5.26 × IAVR µA 5 30 0 10 15 30 I AVR (µA) I ER (µA) 295 MGT892 MGT892 Fig.5 Average monitor current and extinction ratio as a function of IAVR and IER. 12.1.3 Performance of the dual-loop for high data-rate is linked to the quality of the incoming IMON signal: a high performance interconnection between monitor photodiode and MON input is requested for maximum data rate applications (2.7 Gbits/s). DUAL-LOOP CONTROL The dual-loop control measures the monitor current (IMON) corresponding with an optical `one' level and the IMON corresponding with the optical `zero' level. The measured IMON(one) and IMON(zero) are compared with the average monitor current setting and the extinction ratio setting according to: The operational area of the dual-loop and the control area of the monitor input current must respect the following equations: I MON(one) + I MON(zero) I av(MON) = -2 50 µA < I MON(zero) < 500 µA 250 µA < I MON(one) < 2500 µA I MON(one) ER = -I MON(zero) Stability of ER and AVR settings are guaranteed over a range of temperature and supply voltage variations. The dual-loop controls the bias and the modulation current for obtaining the IMON(one) and IMON(zero) current levels which correspond with the programmed AVR and ER settings. 2002 Nov 06 16 Philips Semiconductors Product specification 30 Mbits/s up to 3.2 Gbits/s A-rateTM laser drivers 12.1.4 TZA3011A TZA3011A; TZA3011B TZA3011B 12.1.5 ALARM OPERATING CURRENT The alarm threshold Ioper(alarm) on the operating current is determined by the source current IMAXOP of the MAXOP pin. The current range for IMAXOP is from 10 to 200 µA which corresponds with an Ioper(alarm) from 7.5 to 150 mA. The IMAXOP current can be sunk by an external current source or by connecting RMAXOP to ground: The alarm threshold IMON(alarm) on the monitor current is determined by the source current IMAXMON of the MAXMON pin. The current range for IMAXMON is from 10 to 200 µA which corresponds with an IMON(alarm) from 150 to 3000 µA. The IMAXMON current can be sunk by an external current source or by connecting RMAXMON to ground: V MAXOP I oper(alarm) = N MAXOP × -R MAXOP V MAXMON I MON(alarm) = N MAXMON × -R MAXMON The operating current equals the bias current for an AC-coupled laser application and equals the bias current plus half of the modulation current for the DC-coupled laser application: 12.1.6 PULSE WIDTH ADJUSTMENT The pulse width adjustment time is determined by the value of resistor RPWA, as shown below. I oper ( TZA3011A TZA3011A ) = I BIAS I oper ( TZA3011B TZA3011B ) ALARM MONITOR CURRENT R PWA ­ 10 k t PWA = 200 × - [ps] R PWA I mod = I BIAS + -2 The tPWA range is from -100 to +100 ps which corresponds with a RPWA range between a minimum resistance of 6.7 k and a maximum resistance of 20 k. The PWA function is disabled when the PWA input is short-circuited to ground; tPWA equals 0 ps for a disabled PWA function. handbook, halfpage 100 t PWA (ps) 0 6.7 10 R PWA (k) 20 -100 MGT893 MGT893 Fig.6 Pulse width adjustment. 2002 Nov 06 17 Philips Semiconductors Product specification 30 Mbits/s up to 3.2 Gbits/s A-rateTM laser drivers 12.2 TZA3011A TZA3011A; TZA3011B TZA3011B TZA3011A TZA3011A with dual-loop control A simplified application using the TZA3011A TZA3011A with dual-loop control and with an AC-coupled laser at 3.3 V laser voltage is illustrated in Fig.7. The average power level and the extinction ratio are determined by the resistors RAVR and RER. The MODOUT and BIASOUT outputs are connected to the MODIN and the BIASIN inputs respectively. The alarm threshold on the operating current is made temperature dependent with resistor RVTEMP connected between VTEMP and MAXOP. This alarm detects the end of life of the laser. V MAXOP TC VTEMP × ( T j ­ 25 °C ) I oper(alarm) = N MAXOP × - ­ - - R MAXOP R VTEMP The resistor RPWA enables pulse width adjustment for optimizing the eye diagram. GND 27 VCCO BIASOUT MODIN MODOUT MON 25 26 2 24 3 23 4 22 TZA3011A TZA3011A 5 21 6 20 7 19 8 18 9 10 ENABLE ALRESET 28 11 12 13 14 15 laser with monitor diode BIAS GND LA LA LAQ LAQ GND 17 16 PWA CINQ 29 RREF CIN 30 MAXMON TEST 31 VTEMP DINQ 32 MAXOP DIN 1 ALMON VCCD ALOP 3.3 V VCCA ER AVR 3.3 V BIASIN 3.3 V handbook, full pagewidth MGT895 MGT895 Fig.7 TZA3011A TZA3011A with AC-coupled laser and dual-loop control. 2002 Nov 06 18 Philips Semiconductors Product specification 30 Mbits/s up to 3.2 Gbits/s A-rateTM laser drivers 12.3 TZA3011A TZA3011A; TZA3011B TZA3011B TZA3011B TZA3011B with dual-loop control A simplified application using the TZA3011B TZA3011B with dual-loop control and with a DC-coupled laser at 3.3 V or 5 V laser voltage is illustrated in Fig.8. The average power level and the extinction ratio are determined by the resistors RAVR and RER. The MODOUT and BIASOUT outputs are connected to the MODIN and the BIASIN inputs respectively. The open-drain outputs ALOP and ALMON are short-circuited with pin ENABLE causing an active alarm to disable the bias and modulation current sources. The ALRESET input will reset the alarm latches and enable normal operation. handbook, full pagewidth CINQ GND 27 26 VCCO MON BIASIN MODIN MODOUT BIASOUT 28 25 2 24 3 23 4 22 TZA3011B TZA3011B 5 21 6 20 7 19 8 18 9 10 ENABLE ALRESET 29 11 12 13 14 15 16 laser with monitor diode BIAS GND LA LA LAQ LAQ GND 17 PWA CIN 30 RREF TEST 31 MAXMON DINQ 32 VTEMP DIN 1 MAXOP VCCD ALMON 3.3 V VCCA ALOP 3.3 V ER AVR 3.3 V or 5 V MGT894 MGT894 Fig.8 TZA3011B TZA3011B with DC-coupled laser and dual-loop control. 2002 Nov 06 19 Philips Semiconductors Product specification 30 Mbits/s up to 3.2 Gbits/s A-rateTM laser drivers 12.4 TZA3011A TZA3011A; TZA3011B TZA3011B TZA3011B TZA3011B with average loop control A simplified application using the TZA3011B TZA3011B with average loop control and a DC-coupled laser at 3.3 or 5 V laser voltage is illustrated in Fig.9. The ER pin is short-circuited to ground for the average loop control. The average power level is determined by the resistor RAVR. The average loop controls the bias current and the BIASOUT output is connected to the BIASIN input. The modulation current is determined by the MODIN input voltage which is generated by the resistor RMODIN and the 100 µA source current of the MODIN pin. GND 26 VCCO MON MODIN MODOUT BIASIN 27 25 2 24 3 23 4 22 TZA3011B TZA3011B 5 21 6 20 7 19 8 18 9 10 ENABLE ALRESET 28 11 12 13 14 15 16 laser with monitor diode BIAS GND LA LA LAQ LAQ GND 17 PWA CINQ 29 RREF CIN 30 MAXMON TEST 31 VTEMP DINQ 32 MAXOP DIN 1 ALMON VCCD ALOP 3.3 V VCCA ER AVR 3.3 V BIASOUT 3.3 V or 5 V handbook, full pagewidth MGT896 MGT896 Fig.9 TZA3011B TZA3011B with DC-coupled laser and average loop control. 2002 Nov 06 20 Philips Semiconductors Product specification 30 Mbits/s up to 3.2 Gbits/s A-rateTM laser drivers TZA3011A TZA3011A; TZA3011B TZA3011B 13 BONDING PAD LOCATIONS SYMBOL PAD(2)(3) SYMBOL COORDINATES(1) x PAD(2)(3) COORDINATES(1) x y y LA 39 1099.1 185.4 VCCA 1 -1123.9 +1029.3 LA 40 1099.1 290.5 VCCA 2 -1123.9 +949.3 LA 41 1099.1 370.5 VCCD 3 -1123.9 +844.3 GNDO 42 1099.1 670.8 VCCD 4 -1123.9 +764.3 BIAS 43 1099.0 804.8 DIN 5 -1124.0 +604.3 VCCO 44 1099.0 944.4 DINQ 6 -1124.9 +393.3 VCCO 45 1099.0 1024.4 GNDRF 7 -1123.9 +244.5 ACDC 46 942.5 1124.3 GNDRF 8 -1123.9 +139.4 GNDESD 47 765.0 1123.8 GNDRF 9 -1123.9 +4.7 MON 48 602.1 1123.7 GNDRF 10 -1123.9 -100.3 BIASIN 49 431.7 1123.8 TEST 11 -1123.4 -253.4 BIASOUT 50 267.6 1123.8 CIN 12 -1123.9 -441.2 GNDCCB 51 100.8 1123.8 CINQ 13 -1123.9 -697.1 MODIN 52 -82.7 +1123.8 GNDESD 14 -1123.9 -850.8 GNDCCB 53 -241.1 +1123.8 ALRESET 15 -1123.9 -991.4 i.c. 54(4) -274.4 +954.4 ENABLE 16 -829.8 -1123.7 MODOUT 55 -487.2 +1123.8 GNDDFT 17 -665.6 -1124.0 ER 56 -645.6 +1123.8 ALOP 18 -504.9 -1124 AVR 57 -802.8 +1123.8 ALMON 19 -267.6 -1124.3 -221.5 -344.4 Notes 20(4) 21 -98.5 -1124.3 1. All coordinates are referenced, in µm, to the centre of the die. 2. All GND connections should be used. i.c. MAXOP 22(4) -48.6 -368.4 VTEMP 23 +294.0 -1124.2 MAXMON 24 +466.9 -1124.2 RREF 25 +694.9 -1124.0 3. Recommended order of bonding: all GND first, then VCCA,VCCD and VCCO supplies and finally the input and output pins. GNDRF 26 +860.3 -1124.0 4. Pad is internally connected, do not use. PWA 27 +1098.9 -979.4 GNDO 28 +1099.0 -829.7 LAQ 29 +1099.0 -691.2 LAQ 30 +1099.0 -611.2 LAQ 31 +1099.0 -506.4 LAQ 32 +1099.0 -426.4 GNDO 33 i.c. +1099.8 -247.0 34(4) +839.0 -194.4 GNDO 35 +1099.8 -142.0 GNDO 36 +1099.8 -36.8 LA 37 1099.1 105.4 i.c. 38(4) 839.0 179.6 i.c. 2002 Nov 06 21 Philips Semiconductors Product specification 30 Mbits/s up to 3.2 Gbits/s A-rateTM laser drivers TZA3011A TZA3011A; TZA3011B TZA3011B 2.56 mm AVR ER MODOUT GNDCCB MODIN GNDCCB BIASOUT BIASIN MON GNDESD ACDC handbook, full pagewidth 57 56 55 53 52 51 50 49 48 47 46 45 44 VCCO VCCO 3 4 43 BIAS 42 GNDO DIN 5 DINQ 6 GNDRF 7 41 40 39 37 LA LA LA LA GNDRF 8 36 GNDO GNDRF 9 35 GNDO GNDRF 10 33 GNDO TEST 11 CIN 12 32 31 30 29 LAQ LAQ LAQ LAQ 28 GNDO 27 PWA VCCA VCCA 1 2 VCCD VCCD i.c. 54 i.c. 38 x 0 y i.c. 20 i.c. 22 13 14 15 16 17 18 19 21 23 24 25 ALMON MAXOP VTEMP MAXMON RREF GNDRF 2.51 mm 26 ALOP TZA3011UH TZA3011UH GNDDFT ALRESET i.c. 34 ENABLE CINQ GNDESD 0 MGU553 MGU553 Fig.10 TZA3011UH TZA3011UH die. Table 1 Physical characteristics of the bare die PARAMETER VALUE Glass passivation 0.3 µm PSG (PhosphoSilicate Glass) on top of 0.8 µm of silicon nitride Bonding pad dimension minimum dimension of exposed metallization is 80 × 80 µm (pad size = 90 × 90 µm) Metallization 2.8 µm AlCu Thickness 380 µm nominal Size 2.560 × 2.510 mm (6.43 mm2) Backing silicon; electrically connected to GND potential through substrate contacts Attach temperature