TSH150 TSH150I 568191E-15 000000E-12 040000E 264539E 400E-12 162265E-05

WIDE BANDWIDTH AND BIPOLAR INPUTS SINGLE OPERATIONAL AMPLIFIER s s s s s LOW DISTORTION GAIN BANDWIDTH PRODUCT : 150MHz UNITY

TSH150 TSH150 WIDE BANDWIDTH AND BIPOLAR INPUTS SINGLE OPERATIONAL AMPLIFIER s s s s s LOW DISTORTION GAIN BANDWIDTH PRODUCT : 150MHz UNITY GAIN STABLE SLEW RATE : 190V/µs VERY FAST SETTLING TIME : 20ns (0.1%) DESCRIPTION The TSH150 TSH150 is a wideband monolithic operational amplifier, internally compensated for unity-gain stability. Low noise and low distortion, wide bandwidth and high linearity make this amplifier suitable for RF and video applications. Short circuit protection is provided by an internal current-limiting circuit. D SO8 (Plastic Micropackage) PIN CONNECTIONS (top view) The TSH150 TSH150 has internal electrostatic discharge (ESD) protection circuits and fulfills MILSTD883C-Class2. Offset Null 1 Package Part Number 8 2 7 VCC+ Non-inverting Input ORDER CODE 1 Inverting Input 3 6 Output 4 5 N.C. V CC Offset Null 2 Temperature Range D TSH150I TSH150I -40°C, +125°C · D = Small Outline Package (SO) - also available in Tape & Reel (DT) October 2000 1/6 TSH150 TSH150 SCHEMATIC DIAGRAM 7 VCC + Internal Vref non inverting input 3 6 output Cc 2 inverting input 1 Offset N1 8 Offset N2 4 VCC- INPUT OFFSET VOLTAGE NULL CIRCUIT TSH150 TSH150 N2 N1 100kW V CC MAXIMUM RATINGS Symbol Parameter Value Unit VCC Supply Voltage ±7 V Vid Differential Input Voltage ±5 V Vi Input Voltage ±5 V Toper Current On Inputs Current On Offset Null Pins Operating Free-Air Temperature range ±50 ±20 -40 to +125 °C Tstg Storage Temperature Range -65 to +150 °C Value Unit Iin V OPERATING CONDITIONS Symbol VCC Vic 2/6 Parameter Supply Voltage Common Mode Input Voltage Range ±3 to ±6 - V + -1 VCC +2 to VCC V TSH150 TSH150 ELECTRICAL CHARACTERISTICS VCC = ±5V, Tamb = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit 0.3 5 7 mV Vio Input Offset Voltage Tmin. Tamb Tmax DVio Input Offset Voltage Drift Tmin. Tamb Tmax. 10 Iib Input Bias Current. 5 30 µA Iio Input Offset Current. 0.1 2 µA 23 21 25 30 28 40 32 µV/°C Supply Current, no load ICC Tmin. Tamb Tmax VCC = VCC = VCC = VCC = ±5V ±3V ±6V ±5V Large Signal Voltage Gain Vo = ±2.5V RL = RL = 100 RL = 50 mA Vicm 800 300 200 1300 850 650 -3 to +4 -3.5 to +4.5 V 60 100 dB 50 70 dB RL = 100 Avd ±3 RL = 50 ±2.8 +3.5 -3.7 +3.3 -3.5 RL = 100 RL = 50 ±2.9 ±2.7 CMR Input Common Mode Voltage Range Common-mode Rejection Ratio Vic = Vicm min. SVR Supply Voltage Rejection Ratio VCC = ±5V to ±3V V/V Output Voltage Vo Tmin. Tamb Tmax Io GBP SR Output Short Circuit Current Vid = ±1V, Vo = 0V Gain Bandwidth Product AVCL = 100, RL = 100, CL = 15pF, f = 7.5MHz ±50 Slew Rate Vin = ±2V, AVCL = 1, RL = 100, CL = 15pF 100 ±100 150 190 V mA MHz V/µs Equivalent Input Voltage Noise Rs = 50 fo = 1kHz fo = 1k0Hz fo = 100kHz fo = 1MHz en Kov Overshoot Vin = ±2V, AVCL = 1, RL = 100, CL = 15pF 7 6.5 6.2 5.5 5 20 Rise and Fall Time (see note 1) Vin = ±100mV, AVCL = 2 3.5 Delay Time (see note 1) Vin = ±100mV, AVCL = 2 2.5 m Phase Margin AVM = 1, RL = 100, CL = 15pF 50 THD Total Harmonic Distortion AVCL = 10, f = 1kHz, Vo = ±2.5V, no load 0.02 FPB Full Power Bandwidth 2) Vo = 5Vpp, RL = 100 Vo = 2Vpp, RL = 100 tr, tf td % 1) Settling Time 0.1% Vin = ±1V, AVCL = -1 ts nV/Hz 1. See test waveform figure 2. Full power bandwidth = 12 30 ns ns ns Degrees % MHz SR - V opp 3/6 TSH150 TSH150 TEST WAVEFORM EVALUATION CIRCUIT +5V 10µF 50 ts 10nF 0.1% of edge amplitude Input 50 Output 90% 1k 50% td 10nF tr 10% Vin -5V 10µF 1k CF PRINTED CIRCUIT LAYOUT As for any high frequency device, a few rules must be observed when designing the PCB to get the best performances from this high speed op amp. From the most to the least important points : u Each power supply lead has to be bypassed to ground with a 10nF ceramic capacitor very close to the device and a 10µF tantalum capacitor. u To provide low inductance and low resistance common return, use a ground plane or common point return for power and signal. u All leads must be wide and as short as possible especially for op amp inputs. This is in 4/6 u u u u order to decrease parasitic capacitance and inductance. Use small resistor values to decrease time constant with parasitic capacitance. Choose component sizes as small as possible (SMD). On output, decrease capacitor load so as to avoid circuit stability being degraded which may cause oscillation. You can also add a serial resistor in order to minimise its influence. One can add in parallel with feedback resistor a few pF ceramic capacitor CF adjusted to optimize the settling time. TSH150 TSH150 MACROMODEL Applies to: TSH150I TSH150I * Standard Linear Ics Macromodels, 1993. * CONNECTIONS : * 1 INVERTING INPUT * 2 NON-INVERTING INPUT * 3 OUTPUT * 4 POSITIVEPOWER SUPPLY * 5 NEGATIVE POWER SUPPLY .SUBCKT TSH150 TSH150 1 3 2 4 5 (analog) * .MODEL MDTH D IS=1E-8 KF=1.568191E-15 568191E-15 CJO=10F * INPUT STAGE CIP 2 5 1.000000E-12 000000E-12 CIN 1 5 1.000000E-12 000000E-12 EIP 10 5 2 5 1 EIN 16 5 1 5 1 RIP 10 11 1.040000E 040000E+02 RIN 15 16 1.040000E 040000E+02 RIS 11 15 3.264539E 264539E+02 DIP 11 12 MDTH 400E-12 400E-12 DIN 15 14 MDTH 400E-12 400E-12 VOFP 12 13 DC -9.162265E-05 162265E-05 VOFN 13 14 DC 0 IPOL 13 5 1.000000E-03 000000E-03 CPS 11 15 5.757255E-12 757255E-12 DINN 17 13 MDTH 400E-12 400E-12 VIN 17 5 1.5000000e+00 DINR 15 18 MDTH 400E-12 400E-12 VIP 4 18 0.500000E 500000E+00 FCP 4 5 VOFP 2.200000E 200000E+01 FCN 5 4 VOFN 2.200000E 200000E+01 FIBP 2 5 VOFP 1.000000E-02 000000E-02 FIBN 5 1 VOFN 1.000000E-02 000000E-02 * AMPLIFYING STAGE FIP 5 19 VOFP 4.370000E 370000E+02 FIN 5 19 VOFN 4.370000E 370000E+02 RG1 19 5 1.124121E 124121E+03 RG2 19 4 1.124121E 124121E+03 CC 19 29 2.000000E-09 000000E-09 HZTP 30 29 VOFP 5.574976E 574976E+01 HZTN 5 30 VOFN 5.574976E 574976E+01 DOPM 19 22 MDTH 400E-12 400E-12 DONM 21 19 MDTH 400E-12 400E-12 HOPM 22 28 VOUT 5.000000E 000000E+02 VIPM 28 4 5.000000E 000000E+01 HONM 21 27 VOUT 5.000000E 000000E+02 VINM 5 27 5.000000E 000000E+01 EOUT 26 23 19 5 1 VOUT 23 5 0 ROUT 26 3 2.180423E 180423E+01 COUT 3 5 1.000000E-12 000000E-12 DOP 19 25 MDTH 400E-12 400E-12 VOP 4 25 1.511965E 511965E+00 DON 24 19 MDTH 400E-12 400E-12 VON 24 5 1.511965E 511965E+00 .ENDS ELECTRICAL CHARACTERISTICS VCC = ±5V, Tamb = 25°C (unless otherwise specificed) Symbol Conditions Value Unit 0 Vio mV Avd RL = 100 1 V/mV ICC No load 21 mA -3.5 to 4.5 V Vicm VOH RL = 100 +3.6 V VOL RL = 100 -3.6 V mA Isink Vo = 0V 108 Isource Vo = 0V 108 mA GBP RL = 100, CL = 15pF 147 MHz SR RL = 100, CL = 15pF 180 V/µs m RL = 100, CL = 15pF 42 Degrees 22.6 ns ts Av = -1 at 0.1% 5/6 TSH150 TSH150 PACKAGE MECHANICAL DATA 8 PINS - PLASTIC MICROPACKAGE (SO) Millimeters Inches Dim. Min. A a1 a2 a3 b b1 C c1 D E e e3 F L M S Typ. Max. 0.65 0.35 0.19 0.25 4.8 5.8 Min. 1.75 0.25 1.65 0.85 0.48 0.25 0.5 5.0 6.2 0.1 Typ. Max. 0.026 0.014 0.007 0.010 0.069 0.010 0.065 0.033 0.019 0.010 0.020 0.189 0.228 0.197 0.244 0.004 45° (typ.) 1.27 3.81 3.8 0.4 0.050 0.150 4.0 1.27 0.6 0.150 0.016 0.157 0.050 0.024 8° (max.) Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2000 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom © http://www.st.com 6/6