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TSFF5210 Datasheet

Part Manufacturer Description PDF Type Ordering
TSFF5210 Vishay Siliconix Infrared emitting diodes
ri

5 pages,
124.45 Kb

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TSFF5210

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Abstract: TSFF5210 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero , according to IEC 61249-2-21 definition 94 8390 DESCRIPTION TSFF5210 is an infrared, 870 nm emitting , (nm) tr (ns) ± 10 Ie (mW/sr) TSFF5210 180 Note Test conditions see table "Basic , Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾ TSFF5210 Note MOQ: minimum order quantity ABSOLUTE , For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 1 TSFF5210 ... Original
datasheet

5 pages,
99.31 Kb

TSFF5210 TSFF5210 abstract
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Abstract: TSFF5210 Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm , TSFF5210 is an infrared, 870 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant , fire detectors PRODUCT SUMMARY COMPONENT TSFF5210 Ie (mW/sr) (deg) P (nm) tr (ns , T-1¾ TSFF5210 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL , TSFF5210 High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm, GaAlAs Double Hetero Vishay ... Original
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5 pages,
105.53 Kb

TSFF5210 TSFF5210 abstract
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Abstract: VISHAY TSFF5210 Vishay Semiconductors High Speed IR Emitting Diode in 5 mm (T-1¾) Package Description TSFF5210 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH , 1.3, 03-Jun-04 www.vishay.com 1 TSFF5210 Vishay Semiconductors Electrical Characteristics , www.vishay.com 2 Document Number 81090 Rev. 1.3, 03-Jun-04 VISHAY TSFF5210 Vishay Semiconductors , TSFF5210 Vishay Semiconductors Package Dimensions in mm VISHAY 96 12120 www.vishay.com 4 ... Original
datasheet

5 pages,
124.57 Kb

TSFF5210 TSFF5210 abstract
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Abstract: VISHAY TSFF5210 Vishay Semiconductors High Speed IR Emitting Diode in 5 mm (T-1¾) Package Description TSFF5210 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH , V V mV/K µA pF Document Number 81090 Rev. 1.1, 13-Apr-04 www.vishay.com 1 TSFF5210 Vishay , TSFF5210 Vishay Semiconductors I e - Radiant Intensity ( mW/sr ) 1000 e, I e -Attenuation (dB , 3 TSFF5210 Vishay Semiconductors Package Dimensions in mm VISHAY 96 12120 ... Original
datasheet

5 pages,
125.28 Kb

TSFF5210 TSFF5210 abstract
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Abstract: VISHAY TSFF5210 Vishay Semiconductors High Speed IR Emitting Diode in 5 mm (T-1¾) Package Description TSFF5210 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH , V V mV/K µA pF Document Number 81090 Rev. 1.2, 04-May-04 www.vishay.com 1 TSFF5210 Vishay , Document Number 81090 Rev. 1.2, 04-May-04 VISHAY TSFF5210 Vishay Semiconductors I e - Radiant , , 04-May-04 www.vishay.com 3 TSFF5210 Vishay Semiconductors Package Dimensions in mm VISHAY 96 ... Original
datasheet

5 pages,
125.36 Kb

TSFF5210 TSFF5210 abstract
datasheet frame
Abstract: TSFF5210 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSFF5210 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH , TSFF5210 Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified , VISHAY TSFF5210 Vishay Semiconductors 1.25 1000 I F -Forward Current ( mA ) t p/ T= 0.01 0.02 , , 08-Mar-05 www.vishay.com 3 TSFF5210 Vishay Semiconductors Package Dimensions in mm VISHAY ... Original
datasheet

5 pages,
109.04 Kb

TSFF5210 TSFF5210 abstract
datasheet frame
Abstract: TSFF5210 VISHAY Vishay Semiconductors High Speed IR Emitting Diode in 5 mm (T-1¾) Package Description TSFF5210 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH , TSFF5210 VISHAY Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise , Number 81090 Rev. 1.4, 23-Jun-04 TSFF5210 VISHAY Vishay Semiconductors Tamb < 50° t p , ) Figure 8. Attenuation vs. Frequency www.vishay.com 3 TSFF5210 VISHAY Vishay Semiconductors ... Original
datasheet

5 pages,
124.44 Kb

TSFF5210 TSFF5210 abstract
datasheet frame
Abstract: TSFF5210 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSFF5210 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH , TSFF5210 Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified , TSFF5210 Vishay Semiconductors 0.02 e, rel - Relative Radiant Power 1000 tP/T = 0.01 Tamb , TSFF5210 Vishay Semiconductors Package Dimensions in mm 15909 www.vishay.com 4 Document Number ... Original
datasheet

6 pages,
110.21 Kb

TSFF5210 TSFF5210 abstract
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Abstract: TSFF5210 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm , high pulse current operation · High modulation bandwidth: fc = 24 MHz DESCRIPTION TSFF5210 is an , COMPONENT TSFF5210 Ie (mW/sr) 180 (deg) ± 10 p (nm) 870 tr (ns) 15 Note · Test conditions see table "Basic Characteristics" ORDERING INFORMATION ORDERING CODE TSFF5210 Note · MOQ: minimum order , DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSFF5210 www.vishay.com Vishay Semiconductors TEST ... Original
datasheet

5 pages,
105.39 Kb

TSFF5210 TSFF5210 abstract
datasheet frame
Abstract: TSFF5210 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero , 94 8390 DESCRIPTION TSFF5210 is an infrared, 870 nm emitting diode in GaAlAs double hetero (DH , fire detectors PRODUCT SUMMARY COMPONENT Ie (mW/sr) (deg) ± 10 P (nm) 870 tr (ns) 15 TSFF5210 180 Note Test conditions see table "Basic Characteristics" ORDERING INFORMATION ORDERING CODE TSFF5210 , 85 - 40 to + 100 260 230 UNIT V mA mA A mW °C °C °C °C K/W TSFF5210 Vishay Semiconductors High ... Original
datasheet

5 pages,
106.51 Kb

TSFF5210 TSFF5210 abstract
datasheet frame
Abstract: TSFF5210 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSFF5210 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH , TSFF5210 Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified , TSFF5210 Vishay Semiconductors 0.02 e, rel - Relative Radiant Power 1000 tP/T = 0.01 Tamb , TSFF5210 Vishay Semiconductors Package Dimensions in mm 15909 www.vishay.com 4 Document Number ... Original
datasheet

6 pages,
109.46 Kb

TSFF5210 TSFF5210 abstract
datasheet frame
Abstract: TSFF5210 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSFF5210 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH , TSFF5210 Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified , VISHAY TSFF5210 Vishay Semiconductors 1.25 1000 I F -Forward Current ( mA ) t p/ T= 0.01 0.02 , , 08-Mar-05 www.vishay.com 3 TSFF5210 Vishay Semiconductors Package Dimensions in mm VISHAY ... Original
datasheet

6 pages,
134.12 Kb

TSFF5210 TSFF5210 abstract
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