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Part : TSFF5210 Supplier : Vishay Intertechnology Manufacturer : Avnet Stock : - Best Price : $0.3705 Price Each : $0.3753
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Part : TSFF5210 Supplier : Vishay Intertechnology Manufacturer : Newark element14 Stock : 687 Best Price : $0.4050 Price Each : $1.16
Part : TSFF5210-CS12 Supplier : Vishay Intertechnology Manufacturer : Newark element14 Stock : 2,525 Best Price : $0.7590 Price Each : $1.79
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Part : TSFF5210CS12 Supplier : Vishay Intertechnology Manufacturer : ComSIT Stock : 11,000 Best Price : - Price Each : -
Part : TSFF5210 Supplier : Vishay Intertechnology Manufacturer : TME Electronic Components Stock : 493 Best Price : $0.2594 Price Each : $0.4812
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Part : TSFF5210 Supplier : Vishay Intertechnology Manufacturer : element14 Asia-Pacific Stock : 1,022 Best Price : $0.51 Price Each : $1.20
Part : TSFF5210-CS12 Supplier : Vishay Intertechnology Manufacturer : element14 Asia-Pacific Stock : 5,350 Best Price : $0.96 Price Each : $2.2560
Part : TSFF5210 Supplier : Vishay Intertechnology Manufacturer : Farnell element14 Stock : - Best Price : £0.3810 Price Each : £0.8520
Part : TSFF5210-CS12 Supplier : Vishay Intertechnology Manufacturer : Farnell element14 Stock : 2,594 Best Price : £0.4550 Price Each : £0.9270
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TSFF5210 Datasheet

Part Manufacturer Description PDF Type
TSFF5210 Vishay Siliconix Infrared emitting diodes Original

TSFF5210

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: TSFF5210 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSFF5210 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH , TSFF5210 Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified , -Nov-06 TSFF5210 Vishay Semiconductors 0.02 e, rel - Relative Radiant Power 1000 tP/T = 0.01 Tamb , TSFF5210 Vishay Semiconductors Package Dimensions in mm 15909 www.vishay.com 4 Document Number Vishay Semiconductors
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2002/95/EC 2002/96/EC D-74025

TSFF5210

Abstract: TSFF5210 Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm , TSFF5210 is an infrared, 870 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant , fire detectors PRODUCT SUMMARY COMPONENT TSFF5210 Ie (mW/sr) (deg) P (nm) tr (ns , T-1¾ TSFF5210 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL , TSFF5210 High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm, GaAlAs Double Hetero Vishay
Vishay Semiconductors
Original

TSFF5210

Abstract: TSFF5210 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero , according to IEC 61249-2-21 definition 94 8390 DESCRIPTION TSFF5210 is an infrared, 870 nm emitting , (nm) tr (ns) ± 10 Ie (mW/sr) TSFF5210 180 Note Test conditions see table "Basic , Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾ TSFF5210 Note MOQ: minimum order quantity ABSOLUTE , -Jun-09 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 1 TSFF5210
Vishay Semiconductors
Original
Abstract: TSFF5210 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm , 2002/95/EC and in accordance to WEEE 2002/96/EC DESCRIPTION TSFF5210 is an infrared, 870 nm , )  (deg) p (nm) tr (ns) 180 ± 10 870 15 TSFF5210 Note â'¢ Test conditions see table â'Basic Characteristicsâ' ORDERING INFORMATION ORDERING CODE TSFF5210 , SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSFF5210 www.vishay.com Vishay Vishay Semiconductors
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Abstract: TSFF5210 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSFF5210 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH , TSFF5210 Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified , -Nov-06 TSFF5210 Vishay Semiconductors 0.02 e, rel - Relative Radiant Power 1000 tP/T = 0.01 Tamb , TSFF5210 Vishay Semiconductors Package Dimensions in mm 15909 www.vishay.com 4 Document Number Vishay Semiconductors
Original
Abstract: TSFF5210 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm , 2002/95/EC and in accordance to WEEE 2002/96/EC DESCRIPTION TSFF5210 is an infrared, 870 nm , )  (deg) p (nm) tr (ns) 180 ± 10 870 15 TSFF5210 Note â'¢ Test conditions see table â'Basic Characteristicsâ' ORDERING INFORMATION ORDERING CODE TSFF5210 , SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSFF5210 www.vishay.com Vishay Vishay Semiconductors
Original
2011/65/EU JS709A
Abstract: VISHAY TSFF5210 Vishay Semiconductors High Speed IR Emitting Diode in 5 mm (T-1¾) Package Description TSFF5210 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH , V V mV/K µA pF Document Number 81090 Rev. 1.2, 04-May-04 www.vishay.com 1 TSFF5210 Vishay , Document Number 81090 Rev. 1.2, 04-May-04 VISHAY TSFF5210 Vishay Semiconductors I e - Radiant , , 04-May-04 www.vishay.com 3 TSFF5210 Vishay Semiconductors Package Dimensions in mm VISHAY Vishay Semiconductors
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88/540/EEC 91/690/EEC
Abstract: TSFF5210 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm , high pulse current operation · High modulation bandwidth: fc = 24 MHz DESCRIPTION TSFF5210 is an , COMPONENT TSFF5210 Ie (mW/sr) 180 (deg) ± 10 p (nm) 870 tr (ns) 15 Note · Test conditions see table "Basic Characteristics" ORDERING INFORMATION ORDERING CODE TSFF5210 Note · MOQ: minimum order , DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSFF5210 www.vishay.com Vishay Semiconductors TEST Vishay Semiconductors
Original
Abstract: VISHAY TSFF5210 Vishay Semiconductors High Speed IR Emitting Diode in 5 mm (T-1¾) Package Description TSFF5210 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH , . 1.3, 03-Jun-04 www.vishay.com 1 TSFF5210 Vishay Semiconductors Electrical Characteristics , www.vishay.com 2 Document Number 81090 Rev. 1.3, 03-Jun-04 VISHAY TSFF5210 Vishay Semiconductors , TSFF5210 Vishay Semiconductors Package Dimensions in mm VISHAY 96 12120 www.vishay.com 4 Vishay Semiconductors
Original

TSFF5210

Abstract: TSFF5210 VISHAY Vishay Semiconductors High Speed IR Emitting Diode in 5 mm (T-1¾) Package Description TSFF5210 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH , TSFF5210 VISHAY Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise , Number 81090 Rev. 1.4, 23-Jun-04 TSFF5210 VISHAY Vishay Semiconductors Tamb < 50° t p/ T , . Attenuation vs. Frequency www.vishay.com 3 TSFF5210 VISHAY Vishay Semiconductors Package
Vishay Semiconductors
Original
Abstract: VISHAY TSFF5210 Vishay Semiconductors High Speed IR Emitting Diode in 5 mm (T-1¾) Package Description TSFF5210 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH , V V mV/K µA pF Document Number 81090 Rev. 1.1, 13-Apr-04 www.vishay.com 1 TSFF5210 Vishay , TSFF5210 Vishay Semiconductors I e - Radiant Intensity ( mW/sr ) 1000 e, I e -Attenuation (dB , -Apr-04 www.vishay.com 3 TSFF5210 Vishay Semiconductors Package Dimensions in mm VISHAY 96 12120 Vishay Semiconductors
Original
Abstract: TSFF5210 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSFF5210 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH , TSFF5210 Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified , -Mar-05 VISHAY TSFF5210 Vishay Semiconductors 1.25 1000 I F -Forward Current ( mA ) t p/ T= 0.01 0.02 , -Mar-05 www.vishay.com 3 TSFF5210 Vishay Semiconductors Package Dimensions in mm VISHAY 15909 Vishay Semiconductors
Original
Abstract: TSFF5210 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero , 94 8390 DESCRIPTION TSFF5210 is an infrared, 870 nm emitting diode in GaAlAs double hetero (DH , fire detectors PRODUCT SUMMARY COMPONENT Ie (mW/sr) (deg) ± 10 P (nm) 870 tr (ns) 15 TSFF5210 180 Note Test conditions see table "Basic Characteristics" ORDERING INFORMATION ORDERING CODE TSFF5210 , 85 - 40 to + 100 260 230 UNIT V mA mA A mW °C °C °C °C K/W TSFF5210 Vishay Semiconductors High Vishay Semiconductors
Original
Abstract: TSFF5210 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSFF5210 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH , TSFF5210 Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified , -Mar-05 VISHAY TSFF5210 Vishay Semiconductors 1.25 1000 I F -Forward Current ( mA ) t p/ T= 0.01 0.02 , -Mar-05 www.vishay.com 3 TSFF5210 Vishay Semiconductors Package Dimensions in mm VISHAY 15909 Vishay Semiconductors
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Infrared sensor TSOP 1738

Abstract: vo1263 ) Leaded TSFF5210 (870nm) TSHG6200 (850nm) TSHG8200 (830nm) Rottenberger / Director Regional , TSFF5210 (870nm) TSHG6200 (850nm) TSHG8200 (830nm) Rottenberger / Director Regional Marketing , power emitter for infrared illumination > TSHG6200 / 8200 / TSFF5210 > VSMG3700 / VSMG2700 § IGTB
Vishay Intertechnology
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TEMT6000 TEPT5600 TEPT4400 Infrared sensor TSOP 1738 vo1263 V01263 tsop Ir sensor 710 opto coupler Infrared Receiver Sensor VSA-PT0037-0511 VSA-SG0041-0512 VSA-PT0043-0609 VMN-PT0048-0702 VSA-SG0016-0508 VRH-PL2110-0602

sensor BPW34 application note

Abstract: touch sensitive siren using transistor TSFF5210 10 180 15 870 TSAL6100 SMD 5 mm 10 130 800 940 VSMB20.X01 12 , 32 mW/sr at 100 mA · TSFF5210 = ± 10° · Switching at 15 ns · Switching at 15 ns · , VSMF4710 VSMF4720 VSMB20.X01 VSMB20.X01 VSMG20.X01 VSMY285.X01 TSFF5210 TSFF5410 TSFF5510 , TSFF5210 a 48 65 650 30 48 940 j = ± 38° TSHG8400 20 50 890 j = ± 18-22
Vishay Intertechnology
Original
sensor BPW34 application note touch sensitive siren using transistor tsop sensor vo2223 vo3120 infrared signal transmission distance sensor VMN-MS6520-1012

sensor BPW34 application note

Abstract: CEA-2038 APPLICATION GUIDE Part Number VSLY5850 TSFF5210 TSAL6100 VSMB2000X01 VSMB2020X01 VSMY2850G VSMY2850RG 4/18 , · Ie = 32 mW/sr at 100 mA · Switching at 15 ns New Products · TSFF5410 = ± 22° · TSFF5210 = ± , VSMB20.X01 VSMG20.X01 VSMY2850G, -RG TSFF5210 5 mm TSFF5410 TSFF5510 12 12 10 10 22 38 60 Angle of Half , 15 15 TSAL4400 VSLB3940 TSHF5210 TSHF5410 TSFF5210 TSFF5410 VSLY5850 TSFF5510 TSHG5210 TSHG6210
Vishay Intertechnology
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CEA-2038 TSOP4438 VSMY2850 BP104 application note TEMD6200 TSOP58038 VMN-MS6520-1201

IEC60601-2-22

Abstract: IEC608251 TSFF5210 2.7 TSML3710 0.36 TSFF5400 2.1 TSPF5400 2.2 2.4 TSFF5410 2.2
Vishay Semiconductors
Original
CQX48B CQY36N CQY37N TSAL5100 TSHF5400 TSAL5300 IEC60601-2-22 IEC608251 APPLICATION CIRCUIT OF TSAL4400 TSMF3700 83/189/EEC TSHA6501 TSHA6502

751-1201-ND

Abstract: BPW21R TSAL6200 TSAL6400 TSAL7600 TSFF5210 TSFF5410 TSHF5210 TSHF5410 TSHG6200 TSHG6400 TSHG8200
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751-1023-ND 751-1201-ND BPW21R 751-1001-ND 751-1013-ND 751-1213-ND BPW41N 751-1003-ND 751-1004-ND 751-1041-ND 751-1010-ND 751-1011-ND

TSHG8200

Abstract: VSMY1850 VSMY2850RG VSMY3850 TSFF5210 870 TSFF5410 TSFF5510 VSMF4720 15 1 IF=100 mA DISCLAIMER All
Vishay Semiconductors
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VSMY1850 CCTV infrared VMN-PT0211-1101

TSSP4038

Abstract: TSFF5210 10 180 15 870 TSAL6100 10 130 800 940 VSMB2000X01 12 40 15 , 15 ns â'¢ TSFF5410 ϕ = ± 22° â'¢ TSFF5210 ϕ = ± 10° â'¢ VSMF4710 (870 nm) Photo , 10 X X X X 850 100 15 TSFF5210 Dome lens Throughhole Low Transmit , 15 TSAL4400 40 65 15 VSLB3940 TSFF5410 TSFF5210 TSHF5410 TSHF5210 Photo
Vishay Intertechnology
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TSSP4038 VMN-MS6520-1311

Vishay TYPE 40D

Abstract: Vishay 40d 3 600 20 850 Top view TSFF5210 10 180 15 870 TSAL6100 10 130 , 15 ns â'¢ TSFF5410 ϕ = ± 22° â'¢ TSFF5210 ϕ = ± 10° â'¢ VSMF4710 (870 nm) Photo , 35 20 VSMY2850G, -RG 10 X X X X 850 100 15 TSFF5210 Dome lens
Vishay Intertechnology
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Vishay TYPE 40D Vishay 40d panasonic inverter dv 707 AC 1506 VSMF2893RGX01 VSMF2893GX01 VSMF2893SLX01 VSMB2943RGX01 VSMB2943GX01 VSMB2948SL
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