NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| TSAL6200 | Vishay | LED, INFRARED, GAAS, T-1 3/4 (TSAL6200) |
3 pages, |
Original |  |
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| TSAL6200 | Vishay Intertechnology, Inc. | GaAs/GaAlAs IR Emitting Diode in phi 5 mm (T - 1.75) Package |
5 pages, |
Original | |
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| TSAL6200 | Vishay Telefunken | GaAs-GaAlAs IR Emitting Diode in Deg 5 mm (T-1 ) Package |
5 pages, |
Original | |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: TSAL6200 Vishay Semiconductors High Power Infrared Emitting Diode, RoHS Compliant, 940 nm , WEEE 2002/96/EC 2002/96/EC DESCRIPTION TSAL6200 is an infrared, 940 nm emitting diode in GaAlAs/GaAs , (nm) tr (ns) 60 ± 17 940 800 TSAL6200 Note Test conditions see table "Basic , : 4000 pcs, 4000 pcs/bulk T-1¾ TSAL6200 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM , 107 TSAL6200 High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs Vishay ... | Original |
5 pages, |
Infrared Emitting Diode high power infrared led tsal62 TSAL6200 TSAL6200 abstract |
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| Abstract: TSAL6200 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs , /96/EC /96/EC DESCRIPTION TSAL6200 is an infrared, 940 nm emitting diode in GaAlAs/GaAs technology with , TSAL6200 Note Test conditions see table "Basic Characteristics" ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾ TSAL6200 Note MOQ , : emittertechsupport@vishay.com www.vishay.com 1 TSAL6200 Vishay Semiconductors High Power Infrared Emitting Diode, 940 ... | Original |
5 pages, |
TSAL6200 TSAL6200 abstract |
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| Abstract: TSAL6200 GaAs/GaAlAs IR Emitting Diode in ø 5 mm (T1¾) Package Description TSAL6200 is a high , Rev. A4, 04-Nov-97 1 (6) TSAL6200 Absolute Maximum Ratings Tamb = 25_C Parameter Reverse , A4, 04-Nov-97 TSAL6200 Typical Characteristics (Tamb = 25_C unless otherwise specified) 104 IF , (6) TSAL6200 1.25 Fe rel Relative Radiant Power Fe Radiant Power ( mW ) 1000 100 , Sensitivity vs. Angular Displacement TELEFUNKEN Semiconductors Rev. A4, 04-Nov-97 TSAL6200 ... | Original |
6 pages, |
TSAL6200 TSAL6200 abstract |
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| Abstract: TSAL6200 Vishay Semiconductors ¾ GaAs/GaAlAs IR Emitting Diode in ø 5 mm (T1 ) Package Description 94 8389 TSAL6200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology , ) TSAL6200 Vishay Semiconductors Basic Characteristics Tamb = 25_C Parameter Forward Voltage g Test , Ambient Temperature Document Number 81010 Rev. 6, 20-May-99 TSAL6200 Vishay Semiconductors 1000 , ) Figure 8. Rel. Radiant Intensity\Power vs. Ambient Temperature www.vishay.com 3 (5) TSAL6200 ... | Original |
5 pages, |
TSAL6200 TSAL6200 abstract |
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| Abstract: TSAL6200 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø 5 mm (T1¾) Package Description 94 8389 TSAL6200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology , +1-408-970-5600 1 (5) TSAL6200 Vishay Telefunken Basic Characteristics Tamb = 25_C Parameter Forward , TSAL6200 Vishay Telefunken 1000 I e Radiant Intensity ( mW/sr ) I F Forward Current ( A ) 101 , FaxBack +1-408-970-5600 3 (5) TSAL6200 Vishay Telefunken 0° I e rel Relative Radiant Intensity ... | Original |
5 pages, |
TSAL6200 TSAL6200 abstract |
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| Abstract: TSAL6200 VISHAY Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL6200 is a high efficiency infrared emitting diode in GaAlAs on GaAs , www.vishay.com 1 TSAL6200 VISHAY Vishay Semiconductors Basic Characteristics Tamb = 25 °C, unless , Document Number 81010 Rev. 2.0, 01-Oct-04 TSAL6200 VISHAY Vishay Semiconductors 1000 I e , Radiant Intensity/Power vs. Ambient Temperature www.vishay.com 3 TSAL6200 VISHAY Vishay ... | Original |
5 pages, |
TSAL6200 TSAL6200 abstract |
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| Abstract: TSAL6200 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø 5 mm (T1¾) Package Description 94 8389 TSAL6200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology , ) TSAL6200 Vishay Telefunken Basic Characteristics Tamb = 25_C Parameter Forward Voltage g Test , Ambient Temperature Document Number 81010 Rev. 6, 20-May-99 TSAL6200 Vishay Telefunken 1000 I e , ) Figure 8. Rel. Radiant Intensity\Power vs. Ambient Temperature www.vishay.com 3 (5) TSAL6200 ... | Original |
5 pages, |
TSAL6200 TSAL6200 abstract |
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| Abstract: TSAL6200 Vishay Telefunken ¾ GaAs/GaAlAs IR Emitting Diode in ø 5 mm (T1 ) Package Description 94 8389 TSAL6200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology , ) TSAL6200 Vishay Telefunken Basic Characteristics Tamb = 25_C Parameter Forward Voltage g Test , Ambient Temperature Document Number 81010 Rev. 6, 20-May-99 TSAL6200 Vishay Telefunken 1000 I e , ) Figure 8. Rel. Radiant Intensity\Power vs. Ambient Temperature www.vishay.com 3 (5) TSAL6200 ... | Original |
5 pages, |
TSAL6200 TSAL6200 abstract |
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| Abstract: TSAL6200 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs , /96/EC /96/EC DESCRIPTION TSAL6200 is an infrared, 940 nm emitting diode in GaAlAs/GaAs technology with , TSAL6200 Note Test conditions see table "Basic Characteristics" ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾ TSAL6200 Note MOQ , : emittertechsupport@vishay.com www.vishay.com 1 TSAL6200 Vishay Semiconductors High Power Infrared Emitting Diode, 940 ... | Original |
5 pages, |
TSAL6200 TSAL6200 abstract |
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| Abstract: TSAL6200 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm , DESCRIPTION TSAL6200 is an infrared, 940 nm emitting diode in GaAlAs/GaAs technology with high radiant power , PRODUCT SUMMARY COMPONENT TSAL6200 Ie (mW/sr) 60 (deg) ± 17 p (nm) 940 tr (ns) 800 Note · Test conditions see table "Basic Characteristics" ORDERING INFORMATION ORDERING CODE TSAL6200 Note · MOQ , /doc?91000 TSAL6200 www.vishay.com Vishay Semiconductors 180 120 100 80 PV - Power ... | Original |
5 pages, |
TSAL6200 TSAL6200 abstract |
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| Abstract: TSAL6200 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL6200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in , TSAL6200 Vishay Semiconductors Basic Characteristics Tamb = 25 °C, unless otherwise specified Parameter , , 28-Nov-06 TSAL6200 Vishay Semiconductors 1000 I e - Radiant Intensity (mW/sr) I F - Forward , Temperature www.vishay.com 3 TSAL6200 Vishay Semiconductors 0° 10° 20° 30° I e rel - ... | Original |
6 pages, |
TSAL6200 TSAL6200 abstract |
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