TS862C12R - Datasheet Archive

 

(10A) (120V / 10A ) [0401] High Voltage Schottky barrier diode 120 0.88 VRRM VF IO V V 10 1.5 Max Characteristics TS862C12R Units

 

TS862C12R TS862C12R (10A) (120V / 10A ) [0401] High Voltage Schottky barrier diode 120 0.88 VRRM VF IO V V 10 1.5 Max Characteristics TS862C12R TS862C12R Units Condition Tc=25°C MAX. A 4.5 ±0.2 1.32 3.0 ±0.3 10 +0.5 9.3 ±0.5 Major characteristics 0.9 ±0.3 Outline drawings, mm +0.2 1.2 ±0.2 0.8 -0.1 0.4 +0.2 2.7 5.08 1. Gate 2, 4. Drain 3. Source Low VF High Voltage Center tap connection Package : T-pack Epoxy resin UL : V-0 Applications Features High frequency operation DC-DC converters AC adapter Connection diagram Maximum ratings and characteristics 1 2 3 Absolute maximum ratings (at Tc=25°C Unless otherwise specified ) Item Symbol Conditions Rating Unit Repetitive peak surge reverse voltage VRSM Repetitive peak reverse voltage VRRM Average output current Io Square wave, duty=1/2 Tc=137°C 10 * A Non-repetitive surge current * IFSM Sine wave 10ms 1shot 75 A Operating junction temperature Tj +150 °C Storage temperature Tstg tw=500ns, duty=1/40 120 V 120 V -40 to +150 °C * Out put current of center tap full wave connection *Rating per element Electrical characteristics (at Tc=25°C Unless otherwise specified ) Item Symbol Conditions Max. Unit Forward voltage drop VF IFM=10A 0.88 V Reverse current IR VR=VRRM 150 µA 3.0 °C/W Thermal resistance Rth(j-c) Junction to case Mechanical characteristics Approximate mass 2 g (120V / 10A ) TS862C12R TS862C12R (10A) Characteristics Reverse Characteristic (typ.) Forward Characteristic (typ.) Tj=150°C 1 10 Tj=125°C 0 I R Reverse Current (mA) I F Forward Current (A) 10 Tj=150°C Tj=125°C Tj=100°C Tj=25°C 1 0.1 0.0 10 Tj=100°C -1 10 -2 10 Tj= 25°C -3 10 -4 10 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 1.0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 V F Forward Voltage (V) V R Reverse Voltage (V) Forward Power Dissipation (max.) Reverse Power Dissipation (max.) 8 4 P R Reverse Power Dissipation (W) W F Forward Power Dissipation (W) Io 360° 6 Square wave =60° Square wave =120° Sine wave =180° 4 Square wave =180° DC 2 360° DC VR 2 =180° Per 1element 0 0 0 2 4 6 0 I o Average Forward Current (A) 20 40 VR 60 80 Reverse Voltage 100 120 140 (V) Junction Capacitance Characteristic (max.) Current Derating (Io-Tc) (max.) 1000 160 Sine wave =180° Square wave =180° Square wave =120° Square wave =60° 130 120 360° Io VR=60V 110 Junction Capacitance (pF) DC 140 100 Cj Tc Case Temperature (°C) 150 10 100 0 5 Io 10 Average Output Current 15 (A) :Conduction angle of forward current for each rectifier element Io:Output current of center-tap full wave connection 1 10 VR 100 Reverse Voltage (V) 1000 TS862C12R TS862C12R (10A) (120V / 10A ) Surge Current Ratings (max.) Surge Capability (max.) 1000 IFSM PeakHAlf-WaveCurrent (A) 100 I FSM Peak Half - Wave Current (A) 1000 10 100 10 1 10 100 1 10 Number of Cycles at 50Hz Transient Thermal Impedance (max.) 2 10 1 Transient Thermal Impedance (°C/W) 10 Rth j-c: 3 °C/W 10 10 0 -1 10 -2 10 -1 10 T 0 Time 10 (s) 100 tTime (ms) Sinewave 1 10 2 1000