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LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

TRANSISTORS 132 GD

Catalog Datasheet MFG & Type PDF Document Tags

TRANSISTORS 132 GD

Abstract: Power Convertibles PWR 100 enhanced by the use of MOSPOWER transistors. These rugged devices permit higher frequency operation with less compli cated drive circuitry than is possible with bipolar power transistors. Reduced parts count , INPUT Voltage Range CONDITIONS MIN TYP MAX UNITS 4.65 10.8 13.5 21.6 500 5 12 15 24 5.5 13.2 16.5 26.5 VDC VDC VDC VDC VDC GD pF pArms W % %/°C mVp-p mVrms % ISOLATION Rated Voltage
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TRANSISTOR 132-gd

Abstract: TRANSISTORS 132 GD o / M u lla r d V a lv o / M u lla r d V a lv o / M u lla r d V a lv o / M u lla r d S F 132 GD , G D 17 5 *) G D 1 1 0 *) G D 1 6 0 *) GD GD GF GF GF GF GF GF GF 1 7 5 *) 180*> 125 121 134 132 131 , 503 GT GT GT GT 309 309 309 309 G F 143 G F 142 G F 141 GF GF GF GF GD GD 129 130 131 132 24 2 *) 1 , betic o r d e r : Transistors Rectifier diodes Ze n e r power diodes C o m p a r i s o n in a c c o r d a n c e w it h the g r o u p s of t y p e s : AF-Ge-transistors AF-Ge-power transistors
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TRANSISTORS 132 GD

Abstract: IRF1010 the designer a new standard in power transistors for switching applications. Absolute Maximum , , Capacitance (pF) 20 V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd 600 500 Ciss 400 Coss 300 200 Crss 100 0 A 1 10 I D = 6.1A V , ) 10.54 (.415) 10.29 (.405) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32
International Rectifier
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N6A07

Abstract: TRANSISTORS 132 GD ) 1.4 W Two transistors ` on' equally (a) (e) 1.6 W Single transistor " on" (a) (d) 8.8 mW/° C Single transistor ` on' (b) (d) 11.2 mW/° C Two transistors ` on' equally (a) (e) 13.2 mW/° C 114 ° C/W 89 ° C/W 76 ° C/W -55 to + 150 °C , (j-amb) Single transistor " on" (a) (d) Single transistor " on" (b) (d) Two transistors ` on , Gate-source charge Q gs 0.7 nC Gate drain charge Q gd 0.8 nC V DS = 3 0 V , V GS = 1 0
Zetex Semiconductors
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TRANSISTORS 132 GD

Abstract: IRF1010 transistors for switching applications. Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100 , (pF) 20 V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd 600 500 Ciss 400 Coss 300 200 Crss 100 0 A 1 10 I D = 6.1A V DS , (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4
International Rectifier
Original

TRANSISTORS 132 GD

Abstract: BSS159 A °C 55/150/56 see table on next page and diagram 11 Rev. 1.32 page 1 2006-12-11 , ) Each reel contains transistors out of one band whose identifying letter is printed on the reel label. A specific band cannot be ordered separately. Rev. 1.32 page 2 2006-12-11 BSS159N Parameter , Gate to source charge Q gs - 0.14 0.21 Gate to drain charge Q gd - 0.7 1.1 , SD Reverse recovery time t rr Reverse recovery charge Q rr Rev. 1.32 T A=25 °C V
Infineon Technologies
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BSS159 L6327 TRANSISTORS 132 GD BSS159N L6327 gs 20 circuit diagram F016 PG-SOT-23 L6906

TRANSISTORS 132 GD

Abstract: d 132 smd diode table on next page and diagram 11 Rev. 1.32 page 1 2012-03-20 BSP135 Parameter Symbol , connection. PCB is vertical in still air. 3) Each reel contains transistors out of one band whose identifying letter is printed on the reel label. A specific band cannot be ordered separately. Rev. 1.32 page 2 , F=0.1 A, di F/dt =100 A/µs T A=25 °C 0.78 87 70 0.48 1.2 130 104 V ns nC 0.12 A Q gs Q gd Qg V , 3.4 5.4 5.6 28 182 146 13 5.1 8.1 8.4 42 273 ns pF Values typ. max. Unit Rev. 1.32 page 3
Infineon Technologies
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d 132 smd diode D012 PG-SOT223 JESD22-A114-HBM

st25a

Abstract: ST25C transistor . SILICON NPN â  LOW POWER TRANSISTORS IN ORDER OF (1) MAX COLLECTOR DISSIPATION LINE No. ¿J r TYPE No , 5.0 4.0 3.0 10 5.0p 8.0p ME GD R133 A 34 35 36 4C29 4C30 4C31 150m 150m 150m 12M 12M 12M 1,4m 1.4m 1 , I.Om I.Om 30 t 55 f 115 T 200nb 200nb 200nb 50 50 50 3.0 3.0 3.0 8.0p 8.0p 8.0p GD GD GD R133 R133 , 200nb 200nb 200nb 50 50 50 3.0 3.0 3.0 8.0p 8.0p 8.0p GD GD GD R133 R133 R133 A A A 40 41 42 D4C31 , GD PL ME R133 T05 A 0 43 44 45 NS621O0 ST1243 ST1244 150m 150m 150m 20MSA 20M 20M 1.1 m SA S S 30
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st25a ST25C transistor 2N905 2N904 2N906 ST25A transistor BSW39 50M5A BSW40 MM2193A 2SA312 12-IB

TRANSISTORS 132 GD

Abstract: BSP135 L6327 page and diagram 11 Rev. 1.32 page 1 2012-03-20 BSP135 Parameter Symbol Conditions min , in still air. 3) Each reel contains transistors out of one band whose identifying letter is printed on the reel label. A specific band cannot be ordered separately. Rev. 1.32 page 2 2012-03-20 , =100 A/µs T A=25 °C 0.78 87 70 0.48 1.2 130 104 V ns nC 0.12 A Q gs Q gd Qg V plateau V DD=400 V, I D , 5.1 8.1 8.4 42 273 ns pF Values typ. max. Unit Rev. 1.32 page 3 2012-03-20 BSP135 1
Infineon Technologies
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BSP135 L6327 smd diode g6

TRANSISTORS 132 GD

Abstract: IRF150 transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level , high power bipolar switching transistors requiring high speed and low gate drive power. These types can , ±20 150 1.2 150 -55 to 150 300 260 IRF152 100 100 33 20 132 ±20 150 1.2 150 -55 to 150 300 260 IRF153 60 60 33 20 132 ±20 150 1.2 150 -55 to 150 300 260 UNITS V V A A A V W W /°C mJ °C °C °C O , gd V q s = 10V, Iq = 50A, V q s = 0.8 x Rated B V q ss Ig(R E F) = '1 -5mA (Figures 14, 19, 20
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IRF150 IRF151 kiv-8 circuits of IRF150 TA17421 TB334 RF150
Abstract: CF003-03 models. They are 600 ¡im gate w idth transistors with sub half-micron gate length and C , 0.87 -62 -108 -132 -155 -172 177 166 150 135 126 117 112 115 16.7 14.1 11.8 9.6 , 13.2 11.0 9.0 7.5 6.4 5.5 4.8 3.7 2.4 0.7 -0.2 7.93 5.95 4.55 3.54 2.80 2.38 2.08 1.89 1.74 1.53 1.32 1.08 0.98 139 109 91 74 61 49 38 26 12 -2 -13 -20 -24 -25.7 , -9 -11 -58 -103 -127 -151 -169 180 168 154 141 132 124 118 120 s 22 (Mag) (Ang -
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CF003 CF003-01 IL-STD-750 745D3
Abstract: ¡ 6 1 im 5 1 =â¡ 4 1 â¡â¡ 3 1 â¡â¡ 2 1 â¡â¡ 1 Ã GD N N. .C N. .C N. .C N. .C V s Q 2 N. .C IN 2 GD N \ AEP01680 TLE 5206-2S EF 0UT1 GND IN1 IN2 , 4 5 6 7 0000000 7 IN2 GND ' 1 0UT2 l/s AEP01991 OT U1 E F IN 2 GD N , L L L Brake; both low side transistors turned-ON L H L H Motor turns , transistors turned-ON Notes for Output Stage Symbol Value L Low side transistor is turned-ON -
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Q67000-A9290 P-T0220-7-11 206-2GP 006-A9239 P-DSO-20-10 5206-2G

MA520

Abstract: transistor 2sa124 . GERMANIUM PNP â'¢ LOW POWE R TRANSISTORS IN ORDER OF (1) MAX COLLECTOR DISSIPATION 3J il MAX. 21 [DERATE , 3.0 500u 10 b 90 4.Op T024 106 TI380 30m 30.M 16 5.0m 1Ou0 6.0 ,5Om0 20 1 GD R44 107 TI379 30m 35.M 16 5.0m 1Ou0 6.0 ,5Om0 33 § GD R44 108 TI381 30m 35.M 16 5.0m 1Ou0 6.0 ,5Om0 29 § GD R44 109 TI382 30m 35.M 20 5.0m 1Ou0 6.0 ,5Om0 25 § GD R44 110 TI383 30m 35.M 20 5.0m 10u0 6.0 ,5Om0 25 § GD R44 27 D.A. T. A. SYMBOLS AND CODES EXPLAINED
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MA520 transistor 2sa124 2SA124 t1826 TRANSISTOR R44 2SA123 NPC13-1B NPC14-1B USAF511ES036P USAF520ES070M 2N1508 2N1509
Abstract: , MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors. They are , bipolar switching transistors requiring high speed and low gate drive power. These types can be operated , + C GD C RSS = C GD C n ss = Cns + Crc 6000 Q. g 5000 z C|SS Ã 4000 Ã , 1.32 2, 4 b 0.030 0.034 0.77 0.86 2 ,4 bl b- * 0.045 0.055 1.15 , 4.32 4.57 - Ai 0.048 0.052 1.22 1.32 3, 4 b 0.030 0.034 0.77 -
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HRF3205 HRF3205L HRF3205S HRF3205ST

TRANSISTORS 132 GD

Abstract: IRF1010 transistors for switching applications. Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100 , C, Capacitance (pF) 20 V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd 600 500 Ciss 400 Coss 300 200 Crss 100 0 A 1 10 I , ) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84
International Rectifier
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IRF737LC IRF1010
Abstract: transistors for switching applications. Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = , 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd 600 500 Ciss 400 , ) -A- 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) 1.15 International Rectifier
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Telefunken Electronic LED 3mm

Abstract: MG96 . Definitions Vishay Telefunken offers a wide range of semiconductor components including transistors, diodes , YAG-Phosphor (< 0.1%) Y 25% Gd 44.3% Al2, O3, 30.7 Traces of Ce Significant Materials for Disposal No , (< 0.1%) Y 25% Gd 44.3% Al2, O3, 30.7 Traces of Ce Significant Materials for Disposal No , (< 0.1%) Y 25% Gd 44.3% Al2, O3, 30.7 Traces of Ce Significant Materials for Disposal No , , GaAs, SiC Traces of Au, Zn, Ge, Ti Total weight (3mm)132 mg Resistor chip (< 0.1%) 99
Vishay Intertechnology
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Telefunken Electronic LED 3mm MG96

FDPF 33N25T

Abstract: 33N25T N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar , power factor correction. D G G DS TO-220 FDP Series GD S TO-220F FDPF Series S , Pulsed (Note 1) FDP33N25 33 20.4 132 FDPF33N25 250 33* 20.4* 132* Unit V A A A V mJ A mJ V , 160 250 48 -33 132 1.4 -V V/°C A A nA nA V S pF pF pF ns ns ns ns nC nC nC A A V ns C On , effect transistors are e-mail this datasheet produced using Fairchild¡¯s proprietary, planar stripe, DMOS
Fairchild Semiconductor
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FDPF33N25T 33N25T FDPF 33N25T 33n25 diode marking 33a on semiconductor marking 33a on semiconductor

IRFR9120

Abstract: p-channel pspice model silicon gate power field-effect transistors designed for applications such as switch ing regulators , transistors requiring high speed and low gate-drive power. These types can be operated directly from , liO F F ) tF *OFF Qg VGS = 0V to-10V Q gd V DD = -80V, lD - 5.6A. Rl = 14.312 - , 21 6 -0.77 ESCL 51 50 VALUE={(V(5,51 )/ABS(V(5,51 )'(PW R(V(5.51 )' 186/13.2,6)} MODEL MODEL MODEL
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IRFR9120 IF9120 TA17501 p-channel pspice model 123E5 IRFU9120 IF912G IRFR91209A

IRF9131

Abstract: 1RF9131 of operation. These are p-channel enhancement-mode siiicon-gate power field-effect transistors , , and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive power , . Puise Duration 5 -3 6 IR F 9 130, IR F 9 131, IR F 9 132, /R F 9 133 VS D , S O U R C E T O D , O R T E D C r« s = c g d . c a» C9d C9 , + C gd , * " c. d w ^ C l« t 400 ° " - C a
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IRF9131 1RF9130 92CS-43298 1RF9131 IRF9130 IRF9132 IRF9133
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