NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: TRANSISTOR 8.0 Watts Push - Pull Package Style AQ "Polyfet"TM process HIGH EFFICIENCY, LINEAR HIGH , URL:www.polyfet.com SQ201 SQ201 POUT VS PIN GRAPH CAPACITANCE VS VOLTAGE S2A 1 DICE CAPACITANCE , 28 VDS IN VOLTS IV CURVE ID & GM VS VGS S2A 1 DIE ID & GM Vs VG S2A 1 DIE IV 10.00 ... | Original |
2 pages, |
SQ201 s2a transistor TRANSISTOR S2A SQ201 abstract |
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| Abstract: Transistor Outline Package (Surface Mount Type) TO-220SM (TE24L TE24L) : mm 12.0 �1 1.5 +0.1 �0 Y 4.0 �1 1.75 �1 2.0 �1 0.4 �05 13.9 2.0 �1 24.0 �3 11.5 �1 Y X' X Y' Y' 5.2 �1 10.8 �1 X X-X' : mm 100 330 � 13.5 �2 Y-Y' X' 25.5 �5 2 �2 2�S2A MOSFET 2�S2B IGBT 12�D2A 2�S2C JEITA TO�0SM - JEDEC - TE24L TE24L 24 mm 1,000 ... | Original |
1 pages, |
TE24L s2a mosfet 10D2A TRANSISTOR S2A TE24L abstract |
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| Abstract: Transistor Outline Package (Surface Mount Type) TO-220SM : mm 1.32 0.76 2 0.6 10.6 max 0.1 1 3 2 1 (Bottom view) 0.5 4.7 max 2.54 �25 2.6 2.54 �25 3.0 �2 1.5 9.1 10.3 max 3 : mm 10.6 10.3 2.0 2.0 TO�0SM 2.5 2.5 12�D2A 2�S2A MOSFET 2�S2B IGBT 3.0 2�S2C JEITA - JEDEC - 3 1.5 g 2008.04.01 ... | Original |
1 pages, |
10D2A TRANSISTOR S2A datasheet abstract |
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| Abstract: Transistor Outline Package (Surface Mount Type) Embossed TE24L TE24L Tape for the TO-220SM Package Tape Dimensions Unit: mm 12.0 �1 1.5 +0.1 �0 Y 4.0 �1 1.75 �1 2.0 �1 0.4 �05 13.9 2.0 �1 24.0 �3 11.5 �1 Y X' X Y' Y' 5.2 �1 Feed direction 10.8 �1 X , 13.5 �2 Cross section Y-Y' X' Toshiba package name TO�0SM Diode 12�D2A Transistor 2�S2A MOSFET 2�S2B IGBT 2�S2C 25.5 �5 Toshiba package code 2 �2 JEITA package ... | Original |
1 pages, |
TRANSISTOR S2A TE24L IGBT cross 10D2A TE24L abstract |
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| Abstract: Transistor Outline Package (Surface-Mount Type) TO-220SM Package Outline Dimensions Outline Dimensions Unit: mm 1.32 2.54 �25 1 2 0.6 10.6 max 3 0.5 2 1 (Bottom view) 0.1 2.6 2.54 �25 4.7 max 0.76 3.0 �2 1.5 9.1 10.3 max 3 Land Pattern Example Unit: mm 10.6 10.3 TO�0SM Diode 12�D2A Transistor 2�S2A MOSFET 2�S2B IGBT 3.0 2.0 Toshiba package name 2�S2C 2.0 2.5 2.5 Notes � The above diagrams may ... | Original |
1 pages, |
10D2A TRANSISTOR S2A datasheet abstract |
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| Abstract: TRANSISTOR 4.0 Watts Single Ended Package Style SO8 "Polyfet"TM process HIGH EFFICIENCY, LINEAR HIGH , Freq=1000MHz, VDS=28V, Idq=.2A S2A 1 DICE CAPACITANCE 100 6 13.50 5 12.50 Pout 4 , 8 12 16 20 24 28 VDS IN VOLTS IV CURVE ID & GM VS VGS S2A 1 DIE ID & GM Vs VG S2A 1 DIE IV 10.00 1.4 Id in amps; Gm in mhos 1.2 ID IN AMPS 1 0.8 0.6 0.4 ... | Original |
2 pages, |
S8201 S8201 abstract |
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| Abstract: TRANSISTOR 25.0 Watts Push - Pull Package Style AK "Polyfet"TM process HIGH EFFICIENCY, LINEAR HIGH , Freq=1000MHz, VDS=28V, Idq=.8A S2A 4 DICE CAPACITANCE 100 13.00 30 12.00 25 11.00 Pout , 4 8 12 16 IV CURVE 24 28 ID & GM VS VGS S2A 4 DIE IV 6076021-10 S2A 4 DIE ... | Original |
2 pages, |
SK204 TRANSISTOR S2A SK204 abstract |
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| Abstract: TRANSISTOR 4.0 Watts Single Ended Package Style AP "Polyfet"TM process HIGH EFFICIENCY, LINEAR HIGH , Freq=1000MHz, VDS=28V, Idq=.2A S2A 1 DICE CAPACITANCE 100 6 13.50 5 12.50 Pout 4 , 8 12 16 20 24 28 VDS IN VOLTS IV CURVE ID & GM VS VGS S2A 1 DIE ID & GM Vs VG S2A 1 DIE IV 10.00 1.4 Id in amps; Gm in mhos 1.2 ID IN AMPS 1 0.8 0.6 0.4 ... | Original |
2 pages, |
SP201 S8201 SP201 abstract |
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| Abstract: TRANSISTOR 15.0 Watts Single Ended Package Style AP "Polyfet"TM process HIGH EFFICIENCY, LINEAR HIGH , Freq=1000MHz, VDS=28V, Idq=.8A S2A 4 DICE CAPACITANCE 100 20 12.00 18 Pout 16 11.00 , ID & GM VS VGS S2A 4 DIE IV 6076021-10 S2A 4 DIE ID & GM Vs VG 10.00 5 Id Id in amps ... | Original |
2 pages, |
SP204 607-60 SP204 abstract |
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| Abstract: TRANSISTOR 8.0 Watts Single Ended Package Style SO8 "Polyfet"TM process HIGH EFFICIENCY, LINEAR HIGH , Freq=1000MHz, VDS=28V, Idq=.4A S2A 2 DICE CAPACITANCE 100 13.00 12 12.00 11.00 Pout 10 , 8 12 16 20 IV CURVE 28 ID & GM VS VGS S2A 2 DIE IV 6076021-10 S2A 2 DIE ID & ... | Original |
2 pages, |
SP202 S8202 TRANSISTOR S2A S8202 abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| 27014 QS JM54AC14S2A Mil-Jan-S LCC 20 Full production N/A N/A . - tube of 50 [logo][asm][S[date-code(yyww)][A 27014 Q $E JM38510/ JM38510/ JM38510/ JM38510/ 75702S2A JM54AC14S2A-RH Mil-Jan-S LCC 20 Full production N/A N/A . - tube of 50 [logo][asm][S[date-code(yyww)][A 27014 Q$E JM38510R JM38510R JM38510R JM38510R 75702S2A RM54AC14SCA RM54AC14SCA RM54AC14SCA RM54AC14SCA Mil-Jan-S Cerdip 14 transistor ratios and is essentially insensitive to temperature and supply voltage variations. Features www.datasheetarchive.com/files/national/htm/nsc01916-v4.htm |
National | 16/09/1998 | 15.52 Kb | HTM | nsc01916-v4.htm |
| .6000 rail of 19 [logo]¢Z¢S¢4¢A$E JM38510/ JM38510/ JM38510/ JM38510/ 75702BDA 75702BDA 75702BDA 75702BDA 27014 QS JM38510R75702S2A LCC 20 MSL Full production N/A N/A 50+ $138.0000 rail of 50 [logo]¢Z¢S¢4¢A 27014 Q$E JM38510R JM38510R JM38510R JM38510R 75702S2A JM38510R75702SCA JM38510R75702SCA JM38510R75702SCA JM38510R75702SCA CERDIP negative-going input thresholds (typically 1.0V) which is determined internally by transistor ratios and is www.datasheetarchive.com/files/national/htm/nsc01145-v5.htm |
National | 01/11/2002 | 24.17 Kb | HTM | nsc01145-v5.htm |
| 27014 QS 7-8 weeks 500 JM38510R75702S2A LCC 20 Status Full production N/A N/A 50+ $138.00 rail of 50 NSZSSXXYYA 27014 Q> JM38510R JM38510R JM38510R JM38510R 75702S2A JM38510R75702SCA JM38510R75702SCA JM38510R75702SCA JM38510R75702SCA CERDIP 14 Status Full production N/A N/A 50 determined internally by transistor ratios and is essentially insensitive to temperature and supply voltage www.datasheetarchive.com/files/national/pf/54ac14.html |
National | 17/02/2005 | 21.6 Kb | HTML | 54ac14.html |
| I B = 0.9 A 1.3 V I s/b Second Breakdown Current V CE = 120 V t = 200 m s 2 A t s ST | HIGH VOLTAGE NPN MULTIEPITAXIAL FAST-SWITCHING TRANSISTOR BU505 BU505 BU505 BU505 HIGH VOLTAGE NPN MULTIEPITAXIAL FAST-SWITCHING TRANSISTOR Document Number: 5239 Date Update: 22 Format and Raw Text Format BU505 BU505 BU505 BU505 HIGH VOLTAGE NPN MULTIEPITAXIAL FAST-SWITCHING TRANSISTOR n The BU505 BU505 BU505 BU505 is a high voltage NPN fastswitching transistor designed to be used in lighting www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/5239.htm |
STMicroelectronics | 02/04/1999 | 4.67 Kb | HTM | 5239.htm |
| I B = 0.9 A 1.3 V I s/b Second Breakdown Current V CE = 120 V t = 200 m s 2 A t s ST | HIGH VOLTAGE NPN MULTIEPITAXIAL FAST-SWITCHING TRANSISTOR BU505 BU505 BU505 BU505 HIGH VOLTAGE NPN MULTIEPITAXIAL FAST-SWITCHING TRANSISTOR Document Number: 5239 Date Update: 22 Format and Raw Text Format BU505 BU505 BU505 BU505 HIGH VOLTAGE NPN MULTIEPITAXIAL FAST-SWITCHING TRANSISTOR n The BU505 BU505 BU505 BU505 is a high voltage NPN fastswitching transistor designed to be used in lighting www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/5239-v2.htm |
STMicroelectronics | 14/06/1999 | 4.63 Kb | HTM | 5239-v2.htm |
| /A N/A 50+ $9.60 rail of 19 NSZSSXXYYA> JM38510/ JM38510/ JM38510/ JM38510/ 75702BDA 75702BDA 75702BDA 75702BDA 27014 QS 9-11 weeks 500 JM38510R75702S2A LCC 20 Status Full production N/A N/A 50+ $138.00 rail of 50 NSZSSXXYYA 27014 Q> JM38510R JM38510R JM38510R JM38510R 75702S2A transistor ratios and is essentially insensitive to temperature and supply voltage variations. Features www.datasheetarchive.com/files/national/54ac14.html |
National | 25/09/2003 | 20.65 Kb | HTML | 54ac14.html |
| I B = 0.9 A 1.3 V I s/b Second Breakdown Current V CE = 120 V t = 200 m s 2 A t s t f ST | HIGH VOLTAGE NPN MULTIEPITAXIAL FAST-SWITCHING TRANSISTOR Datasheet HIGH VOLTAGE NPN MULTIEPITAXIAL FAST-SWITCHING TRANSISTOR BU505 BU505 BU505 BU505 Document Format Size Format BU505 BU505 BU505 BU505 HIGH VOLTAGE NPN MULTIEPITAXIAL FAST-SWITCHING TRANSISTOR n HIGH VOLTAGE CAPABILITY n The BU505 BU505 BU505 BU505 is a high voltage NPN fastswitching transistor designed to be used in lighting www.datasheetarchive.com/files/stmicroelectronics/books/ascii/docs/5239.htm |
STMicroelectronics | 13/07/2000 | 6.94 Kb | HTM | 5239.htm |
| 2 A t s t f INDUCTIVE LOAD Storage Time Fall Time V Clamp = 250 V I C ST | HIGH VOLTAGE NPN MULTIEPITAXIAL FAST-SWITCHING TRANSISTOR Datasheet HIGH VOLTAGE NPN MULTIEPITAXIAL FAST-SWITCHING TRANSISTOR BU505 BU505 BU505 BU505 MULTIEPITAXIAL FAST-SWITCHING TRANSISTOR n HIGH VOLTAGE CAPABILITY n VERY HIGH SWITCHING SPEED n The BU505 BU505 BU505 BU505 is a high voltage NPN fastswitching transistor designed to be used in lighting www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/5239-v1.htm |
STMicroelectronics | 13/07/2000 | 6.65 Kb | HTM | 5239-v1.htm |
| 3225X7S2A335M 1.0 C4 CAP., X7R, 1000pF, 50V, 1206 AVX,12065A102KAT 12065A102KAT 12065A102KAT 12065A102KAT 1.0 C5 CAP., ELEC., 10uF, 100V TRANSISTOR, NPN, SOT23 Zetex, FMMT624 FMMT624 FMMT624 FMMT624 1.0 Q5 TRANSISTOR, PNP, SOT23 ON SEMI., BSS63LT1 BSS63LT1 BSS63LT1 BSS63LT1 1.0 Q6 TRANSISTOR, PNP, SOT23 Central Semi, CMLT7820G CMLT7820G CMLT7820G CMLT7820G 1.0 Q7 TRANSISTOR, NPN, SOT23 Central Semi, CMLT3820G CMLT3820G CMLT3820G CMLT3820G 1.0 R28 RES www.datasheetarchive.com/download/52903312-364869ZC/1561b.zip (1561Acf.xls) |
Linear | 18/05/2012 | 1303.68 Kb | ZIP | 1561b.zip |
| ., X7S, 3.3uF, 100V, 1210 TDK, C3225X7S2A335M 3.0 1.0 C4 CAP., X7R, 1000pF, 50V, 1206 AVX, 12065C102 12065C102 12065C102 12065C102 .0 1.0 Q2 MOSFET, N-CH, 40-V, LFPAK RENESAS, HAT2169H HAT2169H HAT2169H HAT2169H 34.0 1.0 Q3 TRANSISTOR, NPN, SOT23 DIODES/ZETEX, FMMT624TA FMMT624TA FMMT624TA FMMT624TA 35.0 1.0 Q5 TRANSISTOR, PNP, SOT23 ON SEMI., BSS63LT1G BSS63LT1G BSS63LT1G BSS63LT1G 36.0 1.0 Q6 TRANSISTOR, PNP, SOT23 CENTRAL SEMI., CMLT7820G CMLT7820G CMLT7820G CMLT7820G TR 37.0 1.0 Q7 TRANSISTOR, NPN, SOT23 CENTRAL SEMI., CMLT3820G CMLT3820G CMLT3820G CMLT3820G TR 38.0 3 www.datasheetarchive.com/download/52903312-364869ZC/1561b.zip (1561B .xls) |
Linear | 18/05/2012 | 1303.68 Kb | ZIP | 1561b.zip |