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Part : NXP-SAMPLE-KIT-RFTRANSISTORS-2012-1 Supplier : NXP Semiconductors Manufacturer : Ameya Holding Stock : - Best Price : - Price Each : -
Part : NXP-SAMPLE-KIT-RFTRANSISTORS-2012-1 Supplier : NXP Semiconductors Manufacturer : Chip1Stop Stock : 148 Best Price : $1.26 Price Each : $1.32
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TRANSISTOR S1A 64

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: the potential applied to the reset transistor drain (RDx). The reset gate voltage is then turned off , are given clocking signals appropriate for full frame operation of that output. For example, S1a, S2ab, S3a and SWa would be clocked according to OUTa timing, and S1a, S2ab, S3b and SWb would be , using outputs A and B; S1a, S2ab, S3a and SWa would be clocked according to OUTa serial timing while , ). The circuit consists of a physically isolated metal gate transistor. Its substrate (DPS) may be -
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SI-424A scientific imaging technologies scientific imaging technologies inc TRANSISTOR S1d SI-424 mpp schematic 1E-02 1E-03 1E-04 1E-05 1E-06
Abstract: are intelligent monolithic power circuits which incorporate a lateral bipolar transistor, resistors, zener diodes and a power MOS transistor. The current limiting of these devices allow it to be used , ISD = 0.1A, dISD/dt = 100A/us - - 1.0 ms 6-4 RLD03N06CLE, RLD03N06CLESM , power device which incorporates a Logic Level power MOSFET transistor with a current sensing scheme and , transistor in the control section. The collector of this bipolar transistor is connected to the gate of the Harris Semiconductor
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RLP03N06CLE 03N06C AN7254
Abstract: 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 Package Connection Reset Transistor Drain Reset Gate Last Gate Serial Phase 2 Substrate and Package Ground Serial , and Package Ground Serial Phase 2 Last Gate Reset Gate Reset Transistor Drain Output Amplifier Output , Amplifier Ground Reference Output Drain Supply Output Amplifier Reset Transistor Drain Reset Gate Last Gate , Diode 2 Serial Phase 1 Substrate and Package Ground Serial Phase 2 Last Gate Reset Gate Reset Transistor -
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TK2048 104PW
Abstract: , nnnnnnnnnnnnnnn s 9 8 7 6 5 4 3 2 1 66 6 7 66 65 64 63 â'¢ EHBa C 10 , G ND PARITY C G ND Vcc c3 As cs c4 S1A GND V cc Ct c2 As S , _ A LEO a ERR b S 1 b B 10 OE* 11 sob B0 B3 Vcc Bz G N D 64 Be B 5 G , -3 C7 L-3 GND J-1 soD D-11 B, L-2 PARITY C L-6 GND B-4 S1A E , -10 leo b H-2 S1â'ž K-11 PARITY B De H-10 b6 L-2 PARITY C GND A-9 D -
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29C985
Abstract: 16.5 V can be applied to V+. This link is used to enable/disable the external boost transistor. When this link is inserted, the external boost transistor is disabled. When this link is removed, the external boost transistor is enabled. This link connects the â'VSENSE input to ground. When this link is , + 4 IO 5 GND 0.1ÂuF C55 VDD S1A S2A S3A S4A DGND 2 5 11 14 16 U8 D1 , A 5V PGND 0V B A LK6 PGND DGND EXT_5V S1A S2A S3A S4A C28 0.1ÂuF Analog Devices
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TRANSISTOR S1A 64 smd UG-442 AD5422 EVAL-AD5422 UG08230-0-10/13
Abstract: length) E32-D82F2 (Immersion type, 350 mm length) E32-A01 (External mount; 3.2, 6.4, 9.5 mm clear tube , selectable 100 mA at 300 VDC ­ 30 ms relay output; 3 ms for transistor output Plastic PMMA Plastic ABS ­ , DC power supply only ­ Light-ON / Dark-ON separate models Relay or transistor output; Detect shiny , · Relay or transistor output available · Built-in timers available · Easy to wire terminal block · , VAC NPN or PNP separate models 100 mA at 48 VDC ­ 30 ms relay output; 5 ms for transistor output OMRON
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ISO ultrasonic sensor standards symbols ir remote control ROBOt project report project report on pick and place robot simple pick and place robotic arm ccs c pt100 OMRON DIP switch DRT2-AD04 YF14A-E PYF14A-E P2R-05A P2R-05P P2R-08A P2R-08P
Abstract: .60 Removing the S1-A Jumper for Added Security.61 Other Meter Parameters , JUMPER LOCATION, VIEWING THE BOARD FROM THE REAR OF THE METER FUNCTION S1-A On the right , removed. S1-A allows front-panel control of the three lockouts so that you can lock and unlock meter , Board, sends out the setpoint transistor collectors and permits remote control of significant meter , -13 P2-14 P2-15 DESCRIPTION/FUNCTION Setpoint 1 transistor open-collector output Input of external Newport Electronics
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1-800-NEWPORT 800-NEWPORT D-75392 M1415/N/0199 11051ML-02A
Abstract: , Front Illuminated or thinned back illuminated 64 X 64 pixels Unique thinning and backside treatment , scenes at low light levels from UV to near in frared. This 64 pixel by 64 pixel im ager is primarily , Typical_ Maximum Format_ 64 by 64 pixels full frame , 64 I 3E IE 2P U u u u u , u- crtr U' s s s s s S t. < 33 2 u 1 W G c c 25 1 RGc iE , w c Il g c I e e c 1c l3e PIXEL 10 i_ i PIXEL 1 PIXEL 73 Figure 4: 64 X 64 PIN-OUT -
OCR Scan
TK064 PCC-044T-01 QILE44P-410T CCD circuit OR97077 TKQ64A/
Abstract: U =1 > b Silicon Transistor 2SA1005 « m ^o fj â'" 400 MHz TYP. (1^ = 1.0 mA) Cob = 1.1 pF TYP. (VCB=-10 V) oîTS-ÃpïfcAM^^o NF-3.5 dB TYP. (f=1.0 MHz) (Ta â'" 25 °C ) m n £ fa u 7 9 . ^ - ^ pij ig f± VcBO -40 V 7 9 - 1.1 â >, 9 r^l .tit VcF.(» -40 V X : ,y 9 . ^ _ * ffl ^ , , l il * J ti ÃHI M 1 lïj fi Ai DI /a $ it * A P à ¥ U ffl LU fi S1Ï LU ifi A ^ h W , 332 3 3 11 m * fi il' 047 1 '64 7 0 11 té fs £ fi i i l' , i 0792 24 6677 A i ^ t 1 Ã'f â'¢ h -
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TRANSISTOR BC 456 transistor bc 541 transistor BC 247 055.224 l 0534 l0534 VCB--10 TC-5468
Abstract: , quadruple polysilicon CMOS, 1-transistor memory cell â'¢ 1,048,576-word x 1-bit organization â'¢ Single 5V , OKI Semiconductor FUNCTIONAL BLOCK DIAGRAM B7E42M0 D0177S1 ^bl 64 This Material Copyrighted By Its , . Refresh Period tREF â'" 8 â'" 8 â'" 8 â'" 8 ms Refresh Period (L-version) tREF â'" 64 â'" 64 â'" 64 â'" 64 Random Read or Write Cycle Time tRC 120 â'" 130 â'" 150 â'" 190 â'" ns Read Modify Write , Hidden Refresh Write Cycle lm "H" or'L" â  b724240 D0177b4 S1Û â  77 This Material Copyrighted By -
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ZIP20-P-400 bl 9 a2 18-PIN 20-PIN 26-PIN MSM511000B/BL 576-W DIP18-P-300-W1 26-P-300 MSM511000B/BL-60
Abstract: ˜ hpE Hem tar darllrgton transistor B * c* 13 D TA 143E E FD 14 D TA 114E E HD , TC 123YE 63 0 T C 14 3 Y E 64 D TC 114Y E 74 D TA 114W E 76 D TA 144W E 84 , TA114YUA 62 D TC123YUA 63 D TC143YUA 64 DTC114YUA 74 DTA114W UA 76 DTA144W UA , TA 114YK A 62 D TC 123YK A 63 D TC 143YK A 64 D TC 114YK A 74 D TA 114W K A , 02 H14 M H 14A S1 UMS1N S1 FM S1A H 15 M H 1S A S2 UMS2N S2 FMS2A -
OCR Scan
tc 144e 144EK 2SC4082 2SC4818 2SC4063 2SC4617 2SC4997 2SA1808
Abstract: Transistors I NPN Medium Power Transistor (Switching) UMT2222A/SST2222A/MMST2222A/RXT2222A/PN2222A â'¢Future* 1 ) BVCEO , characteristics "100 z o e i 10 S-1« 10V Ta-25'C IC/IB=10 30V- S 00 Ic-COLLECTOR CURRENT (mA , more compact version of the UMT3 (SC-70), the EMT3 is the world's smallest transistor with a mold size , . For vertical high density mounting, the leaded CPT (SC-64) type with the same mold size is also -
OCR Scan
UMT2222A SST2222A MMST2222A FDCT2222A PN2222A RXT2222A marking R1P TO-126F T146 T116 UMT2907A/SST2907A/MMST2907A
Abstract: transistor 3â'"12 Sn Ports S1â'"10 13â'"22 Dn Ports D10â'"D1 23 DREF Drain of , VGREF DC gate reference voltage 0 5.5 V IPASS Pass transistor current 64 mA , provides ten NMOS pass transistors (Sn and Dn) with a common gate (GREF) and a reference transistor (SREF , voltage set by the reference transistor (SREF). When the Sn port is HIGH, the Dn port is pulled to VCC by , propagation delay. This offers superior matching over discrete transistor voltage-translation solutions where Texas Instruments
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GTL2010 10-BIT SCDS221 A114-4 ISO/TS16949
Abstract: reference transistor 3â'"12 Sn Ports S1â'"10 13â'"22 Dn Ports D10â'"D1 23 DREF , VGREF DC gate reference voltage 0 5.5 V IPASS Pass transistor current 64 mA , provides ten NMOS pass transistors (Sn and Dn) with a common gate (GREF) and a reference transistor (SREF , voltage set by the reference transistor (SREF). When the Sn port is HIGH, the Dn port is pulled to VCC by , propagation delay. This offers superior matching over discrete transistor voltage-translation solutions where Texas Instruments
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Abstract: (small signal) · GA low V (BISS) transistors · GA low noise transistor · GA medium frequency , SOD106 LEADED SMA (SOD124) S1A SOD57 SOD81 SOD64 SOD59 (TO220AC) PRLL4001 S1B Philips Semiconductors
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BC548 TRANSISTOR REPLACEMENT 1n4007 smd, toshiba TYN612 pin diagram S0817MH TYN604 scr pin diagram kmz51 compass BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03
Abstract: . 75°C/W Active Transistor Power D issipation. 640 mW Junction , 0 .0 0 BIAS = 15.00 VOLTS s , S* S1a Ang 170.2 15 9.8 14 9.6 13 9.6 12 9.3 11 9 .4 10 9 .4 98 .8 87 .2 76.0 64 .2 49 .3 32 .6 12.7 -7 .7 - 2 9 .2 - 4 6 .4 - 5 5 .2 - 2 3 .7 - 6 5 .2 17 .4 3 8 -
OCR Scan
transistor tic 2250 PP-38
Abstract: =30-150 s-1A fT= 5 MHz typ. 676 COMPLEMENTARY-PAIR POWER TYPES Hometaxial-Base/Epitaxial-Base I , â'"2 A (TO-66) 507 2N3439 VCEO(SUS)-350V ic - 0.2 A (TO-39) 64 E 2N5416 VCER(SUSI-350V lc - -0.2 A , Transistor Conditions Peak Output Voitage (V) Up to 0.2 R 0.2 to 1 egulator Output 1 to 4 Current (1 ) â -
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2N5781 2N6372 2N5954 2N6292 2N6107 2N6472 2N3440 2N5416 REPLACEMENT 2N5296 RCA 2N5294 replacement 2N6108 RCA 2N6474 IT039I ITO-31
Abstract: IOUT 1.8 2.0 2.4 2.7 3.0 3.6 3.3 18 36 41 64 72 94 100 MAX IIN (uA) 90 85 , S1A C2+ * P OUT S2A C4 C2 0.22uF IN S1B C2- VIN/VOUT CONTROL LOGIC S2B , GND C2+ C20.072" (1.828mm) TRANSISTOR COUNT: 599; SUBSTRATE CONNECTED TO GND. MAX619 Maxim Integrated Products
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MAX619CPA MAX619CSA MAX619EPA MAX619ESA MAX619MJA RPE121Z5U104M50V ERIE CAPACITORS MAX619C/D
Abstract: 180 20 I OUT 1.8 2.0 2.4 2.7 3.0 3.6 3.3 18 36 41 64 72 94 100 MAX I IN , P IC POWER S1A C2+ * P OUT S2A C4 C2 0.22ÂuF IN S1B C2- VIN/VOUT , . 115â' (2. 921mm) OUT GND C2+ C20. 072â' (1. 828mm) TRANSISTOR COUNT: 599; SUBSTRATE Maxim Integrated Products
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Abstract: IOUT 1.8 2.0 2.4 2.7 3.0 3.6 3.3 18 36 41 64 72 94 100 MAX IIN (uA) 90 85 , S1A C2+ * P OUT S2A C4 C2 0.22uF IN S1B C2- VIN/VOUT CONTROL LOGIC S2B , GND C2+ C20.072" (1.828mm) TRANSISTOR COUNT: 599; SUBSTRATE CONNECTED TO GND. MAX619 Maxim Integrated Products
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MAX619S
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