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TRANSISTOR BC337-25

Catalog Datasheet MFG & Type PDF Document Tags

BC337

Abstract: BC337 NPN transistor BC337 / BC338 NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant , CLASSIFICATION OF hFE Product-Rank BC337-16 1Collector 2Base 3Emitter J A BC337-25 D BC337-40 REF. B Product-Rank BC338-16 BC338-25 BC338-40 A B C D E F G H J K K , Base 3 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter , 45 25 5 800 625 150, -55~150 Unit V V V mA mW ° C Any changes of specification will
SeCoS
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BC337 NPN transistor OF TRANSISTOR BC337 transistor bc337 npn transistor BC338 NPN Transistor TO92 300ma OF TRANSISTOR BC338 BC337-25 BC338-25 100MH

bc337-40 npn transistor

Abstract: BC337 amplification, e.g. driver and output stages of audio amplifiers. DESCRIPTION NPN transistor in a TO-92; SOT54 , . UNIT open emitter open base - 50 60 30 45 60 25 1 625 600 400 - V V V V V V A mW peak , mA; VCE = 5 V; f = 100 MHz T"amb -25 C C lç = 100 mA; V cee = 1 V 100 100 100 fT MHz , < CONDITIONS open emitter - MIN. MAX. UNIT 50 60 30 45 60 25 5 500 1 200 625 +150 150 +150 V V , collector - - 25 °C; note 1 - -6 5 - Ti T"amb -6 5 Note 1. 7 ransistor mounted on
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8H721 bc337-40 npn transistor bc337a BC337 pnp transistor TRANSISTOR BC337-25 PNP NPN TRANSISTOR BC337 40 BC327 BC327A BC328 BC337A BC33S

BC337 pnp transistor

Abstract: TRANSISTOR BC337-25 PNP transistor in a TO-92; SOT54 plastic package. PNP complements: BC327, BC327A and BC328. QUICK REFERENCE DATA , 60 V BC338 - 25 V 'cm peak collector current - 1 A Ptot total power dissipation Tamb < 25 °C - , 25 V Vebo emitter-base voltage open collector - 5 V lc collector current (DC) - 500 mA 'cm peak collector current - 1 A Ibm peak base current - 200 mA Ptot total power dissipation Tamb < 25 °C; note , operating ambient temperature -65 +150 °C Note 1. Transistor mounted on an FR4 printed-circuit board
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OCR Scan
TRANSISTOR BC337-40 PNP bc3378 BC337-25 PNP transistor TRANSISTOR BC337-25 MAR105 TRANSISTOR BC337-40 MAM182 BC3378-25 MBH722 SC-43

bc337

Abstract: bc337 fairchild NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES , 50 30 45 25 5 800 625 150 -55 ~ 150 Units V V V V V mA mW °C °C VCEO VEBO IC PC TJ TSTG Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCEO Parameter Collector-Emitter Breakdown , On Voltage Current Gain Bandwidth Product Output Capacitance Test Condition IC=10mA, IB=0 Min. 45 25 , Transistor Contents ·Features ·Applications ·Product status/pricing/packaging ·Order Samples Features z z
Fairchild Semiconductor
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BC33725BU BC33725TA BC33740BU bc337 fairchild BC337/338 BC327/BC328 BC33740TA BC337ABU BC337BU BC337TF

BC337

Abstract: TRANSISTOR BC337 Tamb 25 °C; note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. 1999 Apr 15 2 V Philips Semiconductors Product specification NPN general purpose transistor BC337 , transistor Product specification Supersedes data of 1997 Mar 10 1999 Apr 15 Philips Semiconductors Product specification NPN general purpose transistor BC337 PINNING FEATURES · High current (max , of audio amplifiers. 1 handbook, halfpage DESCRIPTION 3 2 3 2 NPN transistor in a
Philips Semiconductors
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TRANSISTOR BC337 NPN general purpose transistor BC337 BC33716 TRANSISTOR BC337-25 Philips bc337-25 Philips M3D186 SCA63

bc337

Abstract: NPN transistor 500ma TO-92 BC337-16/25/40BC338-16/25/40 NPN Transistor Preliminary Small Signal Diode TO-92 A Features , Transistor Preliminary Small Signal Diode Rating and Characteristic Curves Version:A12 BC337-16/25/40BC338-16/25/40 NPN Transistor Preliminary Small Signal Diode Electrical Characteristics Ta=25 Type , -92 TO-92 Part No. BC337-16 A1 BC337-16 A1G BC337-25 A1 BC337-25 A1G BC337-40 A1 BC337-40 A1G BC338-16 A1 BC338-16 A1G BC338-25 A1 BC338-25 A1G BC338-40 A1 BC338-40 A1G Packing 4K/box 4K/box 4K/box 4K/box 4K
Taiwan Semiconductor
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NPN transistor 500ma TO-92 Transistor A12 BC-337-16 transistor bc33740 bc33840 NPN Transistor TO92 BC337-16/25/40BC338-16/25/40 MIL-STD-202 A/300

BC337L

Abstract: QW-R201-039 BC337 BC338 SYMBOL VCES VCEO NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (Ta=25°C, unless otherwise specified) RATINGS 50 30 45 25 UNIT V V V V Emitter-Base Voltage VEBO 5 V Collector Current (DC) IC 800 mA Collector Dissipation 625 mW PC Derate Above 25°C 5 mW/°C Junction Temperature TJ 125 , NPN SILICON TRANSISTOR * Suitable for AF-Driver stages and low power output stages * Complement to , ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL BVCEO BVCES BVEBO ICES
Unisonic Technologies
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QW-R201-039 BC337L BC338L BC337/BC338 BC327/328 BC337L- BC337G-
Abstract: www.unisonic.com.tw 25 160-400 40 250-630 2 of 3 QW-R201-039.E BC337/BC338 NPN SILICON TRANSISTOR , UNISONIC TECHNOLOGIES CO., LTD BC337/BC338 NPN SILICON TRANSISTOR SWITCHING AND AMPLIFIER , Technologies Co., LTD BC338 1 of 3 QW-R201-039.E BC337/BC338  NPN SILICON TRANSISTOR , Collector-Emitter Voltage VCES 30 V 45 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 5 , Current Gain  RATINGS 200 83.3 VCE(SAT) VBE(ON) Cob fT MIN 45 25 50 30 5 TYP Unisonic Technologies
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BC338L- BC338G-

transistor 2N3906 smd 2A SOT23

Abstract: 2n3904 TRANSISTOR REPLACEMENT GUIDE (3) Medium Power Transistor 22 IDI 21 IDG 19 VDR 15 VDREF BC327-25 BC327-25 , Power Transistor 22 IDI 21 IDG 19 VDR 15 VDREF BC327-25 BC327-25 BC327-25 , STZTA92 MMBTA42 MMBTA92 (1) Different PIN OUT (2) Similar Package (3) Medium Power Transistor For , Driver For LED High gain transistor used to drive 100mA relay. High gain transistor used to drive 20mA LED. Due to the high gain characteristic the transistor will switch on with just IB
STMicroelectronics
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MMBT3094 transistor 2N3906 smd 2A SOT23 2n3904 TRANSISTOR REPLACEMENT GUIDE BC327-40 SMD bc107 TRANSISTOR SMD CODE PACKAGE SOT23 BC548 TRANSISTOR REPLACEMENT BC327-25 SMD BF722 BF723 BFN38 CZTA42 CZTA92 KSA539

BC337

Abstract: TRANSISTOR BC337-25 BC337/338 BC337,-16,-25,-40 TRANSISTOR (NPN) BC338, -16,-25,-40 FEATURES Power dissipation TO-92 PCM: 0.625 W (Tamb=25) 1. COLLECTOR Collector current ICM: 0.8 A , . BASE 1 2 3 3. EMITTER TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 , 25 V 5 V Collector-emitter breakdown voltage BC337 IC= 10 mA , IB=0 VCEO BC338 , BC337-16/BC338-16 BC337-25/BC338-25 BC337-40/BC338-40 100 100 160 250 60 630 250 400 630
WEJ Electronic
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bc337 transistor datasheet BC337 NPN transistor datasheet BC337 hfe transistor BC337-16 BC337 equivalent bc337 transistor BC337-25/BC338-25

QW-R201-039

Abstract: OF TRANSISTOR BC337 UTC BC337/338 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS FEATURES , : COLLECTOR 2: BASE 3: EMITTER ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified) PARAMETER , 30 UNIT V V V V V mA mW °C °C VCEO 45 25 5 800 625 150 -55 ~ +150 VEBO Ic Pc Tj TSTG ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER Collector-emitter breakdown , BVCEO TEST CONDITIONS Ic=10mA, IB=0 MIN 45 25 TYP MAX UNIT V V V V V BVCES Ic
Unisonic Technologies
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BC337

Abstract: BC338 www.haorm.cn BC337/BC338 TRANSISTOR (NPN) FEATURES Power dissipation TO-92 MAXIMUM RATINGS (TA=25 unless otherwise noted) 1. COLLECTOR Symbol 2.BASE Parameter Value Collector-Emitter Voltage VEBO 30 BC337 45 25 Emitter-Base Voltage IC 50 BC338 VCEO , Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 , Collector cut-off current BC337 BC338 Emitter cut-off current BC337/BC338 BC337-16/BC338-16 BC337-25
HAROM
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BC338 TRANSISTOR BC-337 TRANSISTOR bc337 40 NPN bc338
Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC337,-16,-25,-40 TRANSISTOR (NPN) TO-92 BC338, -16,-25,-40 FEATURES Power dissipation 1. COLLECTOR PCM: 0.625 2. BASE W (Tamb=25â"ƒ) 3. EMITTER Collector current 0.8 A ICM , MAX UNIT Ic= 100µA, IE=0 BC337 50 V BC338 30 V 45 V 25 V 5 , -16 BC337-25/BC338-25 BC337-40/BC338-40 100 100 160 250 60 630 250 400 630 VCE= 5V, IC Jiangsu Changjiang Electronics Technology
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Abstract: UNISO TE NIC CHNO G SCO LTD LO IE ., BC337/BC338 NPN SILICON TRANSISTOR SWI T CH I N G AN , -039.D BC337/BC338 Ì NPN SILICON TRANSISTOR ABSOLU T E M AX I M U M RAT I N G (Ta=25°C, unless , V V 45 25 VCES Collector-Emitter Voltage RATINGS 50 30 V V VCEO , =50mA VCE=1V, IC=300mA VCB=10V, IE=0, f=1MHz VCE=5V, IC=10mA, f=50MHz MIN 45 25 50 30 5 TYP , www.unisonic.com.tw 25 160-400 40 250-630 2 of 3 QW-R201-039.D BC337/BC338 Ì NPN SILICON Unisonic Technologies
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bc3378

Abstract: TRANSISTOR BC337-25 PNP handbook, halfpage DESCRIPTION 3 2 3 2 NPN transistor in a TO-92; SOT54 plastic package , V BC337 - 45 V BC337A - 60 V BC338 - 25 V - 1 A - , 25 °C hFE DC current gain IC = 100 mA; VCE = 1 V fT 1997 Mar 10 transition , - 30 V BC337 - 45 V BC337A - 60 V BC338 VCEO - - 25 , storage temperature Tamb 25 °C; note 1 -65 +150 °C Tj junction temperature - 150
Philips Semiconductors
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mar 722 BC337 Philips BC338 philips BC337 sot54 bc337 texas BC33740 SCA53
Abstract: TO-92 Plastic-Encapsulate Transistors BC337,-16,-25,-40 TRANSISTOR (NPN) TO-92 BC338, -16,-25,-40 FEATURES Power dissipation 1. COLLECTOR PCM: 0.625 2. BASE W (Tamb=25â"ƒ) 3. EMITTER Collector current 0.8 A ICM: Collector-base voltage BC337 50 V VCBO: BC338 30 , =0 BC337 50 V BC338 30 V 45 V 25 V 5 V IC= 10 mA , IB , BC338 Emitter cut-off current DC current gain BC337/BC338 BC337-16/BC338-16 BC337-25/BC338-25 Bytes
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OF TRANSISTOR BC337

Abstract: TRANSISTOR BC337-25 BC337-16 / BC337-25 BC337-16 BC337-25 E B TO-92 C NPN General Purpose Amplifier , * Symbol TA = 25°C unless otherwise noted Parameter Value Units VCEO Collector-Emitter , applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD TA = 25°C unless otherwise noted Characteristic RJC Total Device Dissipation Derate above 25°C Thermal , Semiconductor Corporation Max Units BC337-16 / BC337-25 625 5.0 83.3 mW mW/°C °C/W 200 °C
Fairchild Semiconductor
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TN3019A transistor 33725 bc337 m CBVK741B019 F63TNR PN2222N

BC33740BU

Abstract: bc337 fairchild NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES , 50 30 45 25 5 800 625 150 -55 ~ 150 Units V V V V V mA mW °C °C VCEO VEBO IC PC TJ TSTG Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCEO Parameter Collector-Emitter Breakdown , On Voltage Current Gain Bandwidth Product Output Capacitance Test Condition IC=10mA, IB=0 Min. 45 25 , Transistor Analog and Mixed Signal Contents Discrete Features | Applications | Product Interface status
Fairchild Semiconductor
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npn bc338 signal transistor BC338N BC33840TA BC33840BU BC33825BU BC33816TA BC33816BU BC33825TA

BC337 NPN transistor datasheet

Abstract: bc337 UTC BC337/338 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS , -92 1: COLLECTOR 2: BASE 3: EMITTER ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified , Junction Temperature Storage Temperature V V 45 25 5 800 625 150 -55 ~ +150 V V V mA mW °C °C VCES VCEO VEBO Ic Pc Tj TSTG ELECTRICAL CHARACTERISTICS (Ta=25°C, unless , saturation voltage UTC MIN TYP MAX UNIT 45 25 BVCES BVEBO ICES hFE1 hFE2 VCE(sat
Unisonic Technologies
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Equivalent for BC337 transistor 338 hfe1

BC337 45V 800mA NPN Transistor

Abstract: TRANSISTOR BC337-25 BC337-25: 8B BC337-40: 8C 1 COLLECTOR 1 2 3 BASE EMITTER TO-92 ABSOLUTE MAXIMUM , ) RJ A 200 /W Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in. ELECTRICAL CHARACTERISTICS (TJ=25 C, unless otherwise noted) PARAMETER SYMBOL MIN. TYP. MAX. UNIT Collector - Emitter , =30V, IE=0) Collector Cutoff Current (VCE=45V, VBE=0) DC Current Gain (IC=100mA,VCE=1V) BC337-16 BC337-25 , hFE 150 T J= 150°C 400 350 T J= 75°C hFE 300 250 200 150 100 T J= 75°C T J= 25°C T
PanJit International
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BC337 45V 800mA NPN Transistor BC337 45V 800mA OF TRANSISTOR BC33740 BC337-xx BC337-
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