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Part : TRANSISTOR KIT Supplier : Jameco Manufacturer : Jameco Electronics Stock : 20 Best Price : $59.95 Price Each : $69.95
Part : NXP-SAMPLE-KIT-RFTRANSISTORS-2012-1 Supplier : NXP Semiconductors Manufacturer : Ameya Holding Stock : - Best Price : - Price Each : -
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TRANSISTOR BC 239 c

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: trois classes de gain statique A â'" B â'" C The transistor BC 239 is grouped in two classes of DC gain B â'" C Le transistor BC 239 est subdivisé en deux classes de gain statique B-C 2/10 358 BC 237 , â'" C The transistor BC 239 is grouped in two classes of small signal current gain B â'" C Le transistor BC 239 est subdivisé en deux classes de gain dynamique B â'" C 2/10 359 BC 237, BC 238, BC 239 , TtON Tamb =+25°c (Unless otherwise stated) (Sauf indications contraires! BC 237 BC 238 BC 239 -
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bc 357 transistor transistor BC 55 bc 106 transistor transistor bc 102 bc 103 transistor transistor C238 CB-76
Abstract: ollector-E m itter Voltage : BC237 : BC 238/239 C ollector-E m itter Voltage : BC237 : BC 238/239 Em itter-Base Voltage : BC237 : BC 238/239 C ollecto r C urrent (DC) C ollecto r D issipation Junction Tem , m itter Breakdow n Voltage :BC237 : BC 238/239 Em itter Base Breakdow n Voltage : BC237 : BC 238/239 C ollector C ut-off C urrent : BC237 : BC 238/239 DC C urrent Gain C ollector-E m itter , NPN EPITAXIAL SILICON TRANSISTOR BC237/238/239 SWITCHING AND AMPLIFIER APPLICATIONS T O -92 -
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transistor BC 238 TRANSISTOR BC 239 F BC237/238/239 BC239
Abstract: . ¿135010 UL >64/2 RADUGA 730 IS: K 155 L I )1 TB-Gerät Transistor 8342113 U 2405 S BC 413 B/C BC 149 B/G 8302130 8 332 128 BC 148 B 8382120 BC 148 C 8343042 3C 107 A 8322138 BC 147 B/C Diode AAP 155 3442029 BYP , 8353003 3 3 2 2 10 1 BC 108 C 8372110 BC 160 EI ? 215 8313004 Diode 8442029 /AP 155 Diodenoaar 6452030 AAP , i joC'033 83OIOI? VRP IS: 0 160 D ïransistor 30 239 c SC 239 e SC 239 d sc 239 f SC 237 d SC , sind diese Bauelemente durch Originalersatzteile zu ersetzen. - B e a c h t e n Sie! Sämtliche -
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6D22S BC 148 TRANSISTOR transistor BC-148 DIODE ga transistor bc 148 service-mitteilungen bc 147 B transistor 350AF-S
Abstract: BC 182 B BC 183 BC 183 A BC 183 B BC 183 C BC 184 BC 184 B BC 184 C BC 237 BC 237 A BC 237 B BC 238 BC 238 A BC 238 B BC 238 C BC 239 BC 239 B BC 239 C BC 181 BC 212 BC 212 A BC 212 B BC 213 BC 213 A BC 213 B BC 213 C BC 214 BC 214 B BC 214 C BC 307 BC 307 VI BC 307 A BC 307 B BC 308 BC 308 VI BC 308 A BC 308 B BC 308 C BC 309 BC 309 VI BC 309 A BC 309 B BC , general purpose transistor selector guide â'" plastic case guide de sélection thomson-csf -
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TRANSISTOR BC 213 TRANSISTOR BC 181 bf 239 transistor bf 184 TRANSISTOR BC 212 BF 212 transistor BCW94
Abstract: BC237/238/239 BC237/238/239 Switching and Amplifier Applications · Low Noise: BC239 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES VCEO VEBO , /239 : BC237 : BC238/239 : BC237 : BC238/239 1 TO-92 1. Collector 2. Base 3. Emitter Value 50 30 45 25 6 5 100 500 150 -55 ~ 150 Units V V V V V V mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage : BC237 Fairchild Semiconductor
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TRANSISTOR 237b BC239 NPN transistor BC238 NPN transistor BC239CTA cross reference bc237 transistor bc 238 b BC238/239 BC237/238 100MH BC237A BC237ATA BC237BBU
Abstract: ) C haracteristic Sym bol C ollector Em itter Breakdow n Voltage : BC307 : BC 308/309 C ollector Em itter Breakdow n Voltage : BC307 : BC 308/309 Em itter Base Breakdow n Voltage C ollector C ut-off C urrent : BC307 : BC 238/239 DC C urrent Gain C ollector-E m ltter Saturation Voltage B V , ollector-E m ltter Voltage : BC307 : BC 308/309 C ollector-E m ltter Voltage : BC307 : BC 308/309 Em , = V be FAIRCHILD Min -45 -25 C ollector Base Saturation Voltage : BC 237/238 : BC239 -
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BC307/308/309 BC309
Abstract: BC237/238/239 BC237/238/239 Switching and Amplifier Applications · Low Noise: BC239 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES VCEO VEBO , /239 : BC237 : BC238/239 : BC237 : BC238/239 1 TO-92 1. Collector 2. Base 3. Emitter Value 50 30 45 25 6 5 100 500 150 -55 ~ 150 Units V V V V V V mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage : BC237 Fairchild Semiconductor
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BC237CTA 237B TRANSISTOR 2bc237 BC238 BC237BTFR BC237BU BC237CBU BC237TF BC237TFR
Abstract: 10 BC 239 N TO-92F 300 100 20 200 800 t 2 5 0.6 100 150 4.5 4 BC 250 P TO-92F 300 100 20 35 600 t 1 , min (MHz) Cob max (pF) n.f. max (dB) Pd (mW) 'c (mA) VCEO (V) max 'c (mA) ui >°> max (V) â c (mA) BC 107 N TO-18 300 100 45 110 450 â'¢ 2 5 0.6 100 150 6 10 BC 108 N TO-18 300 100 20 110 800 t 2 5 0.6 100 150 6 10 BC 109 N TO-18 300 100 20 110 800 t 2 5 0.6 100 150 6 4 BC 110 N TO-18 300 50 80 30 â'" 2 5 0.6 50 100+ 5 â'" BC 113 N TO-106 200 50 25 200 1000 1 5 0.35 1 60 4 3 -
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TRANSISTOR BC 208 TRANSISTOR BC 158 TRANSISTOR BC 157 transistor BC 209 FOR TRANSISTOR BC 149 B BC 114 transistor MELF-005 MT-12 S40/S-
Abstract: 546 B BC 5471 1 BC 547 VI BC 547 A BC 547 B BC 5481 » BC 548 VI BC 548 A BC 548 B BC 548 C Ordering , ) 120 BC 546 BC 547, BC 549 BC 548, BC 550 B *FE k/h 150 290 (200 to 450) 200 BC 548, BC 549, BC 550 C , ; Ic = 200 ^A; flg = 2 kQ; f = 10 to 50 Hz; 7am b = 25 °C) h CcBO c ebo BC 546 BC 547 BC 548 300 , (3.2 to 8.5) 2 330 30 ( , = parameter (common-emltter configuration) BC 546 B, B C 547 B, B C 548 B. BC 549 B, BC 550 B -
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BC547 BC650 C 548 B B549C C 547 B TRANSISTOR BC650 transistor bc 549 equivalent Q62702-C687 Q62702-C687-V3 Q62702-C687-V1 Q62702-C687-V2 Q62702-C688 Q62702-C688-V3
Abstract: BC5481» Q62702-C689 BC 548 VI Q62702-C689-V4 BC 548 A Q62702-C689-V1 BC 548 B Q62702-C689-V2 BC 548 C Q62702-C689-V3 Type Ordering code BC 5491' Q62702-C690 BC 549 B Q62702-C690-V1 BC 549 C Q62702-C690-V2 BC5501> Q62702-C691 BC 550 B Q62702-C691 -V1 BC 550 C Q62702-C691-V2 0,4-0,4 2,5 max. =U~ t" b c , BC 548, BC 550 BC 550 hFE group VI A B C k hF e hFE hfs mA UJlB Idh Idh Idh 0.01 90 150 270 2 , BC 547 BC 548 BC 549 BC 550 Transition frequency (VCE = 5 V; /c = 10 mA; f = 100 MHz) h 300 -
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transistor 2sc 548 equivalent transistor bc 649 BC548BC BC660 2sC 548 B Bc 649 BC5461 Q62702-C688-V1 Q62702-C688-V2 BC546 BC550 BC549
Abstract: -92 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C , V V V mA mW °C °C VCEO VEBO IC PC TJ TSTG ©2001 Fairchild Semiconductor Corporation Rev. B1, June 2001 BC307/308/309 Electrical Characteristics Ta=25°C unless otherwise noted Symbol , Voltage : BC307 : BC308/309 Emitter-Base Breakdown Voltage Collector Cut-off Current : BC307 : BC238/239 , (on) fT Cob Cib NF 2 hFE Classification Classification hFE A 120 ~ 220 B 180 ~ 460 C 380 ~ 800 Fairchild Semiconductor
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transistor BC 458 Transistor BC 308C BC 2001 transistor BC307BTA BC308A BC308CBU BC308BBU BC308 BC308C BC308ABU
Abstract: Kontaktfedern kpl. T4-D-5471-041-1 Transistor BC 109 B Transistor BC 178 Transistor AC 178p/AC 179p , . Diode Thermistor BA 560 entspricht 47 Ohm (R 113) , SY 201/SY 221 TNM 47 Der Transistor BC 109 B kann ohne Schaltungsänderungen durch den BC 149 C oder äquivalente Typen ersetzt werden. Der BC 109 B , organisieren. 2. Z e i c h n u n g e n sind nach Möglichkeit im Maßstab 1 < 1 (Verhältnis von Originalzeichnung , n z e i c h n u n g e n können ge druckt werden. Geeignet sind ' 'kräftige" aber nicht "hart" ge -
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transistor t4B TRANSISTOR BC 109 Stassfurt servicemitteilungen Service Mitteilungen service mitteilung T4-D-5471-571-1 T4-C-5471-169-1 T4--D-2858-002-1 UF-50 T4-A-5471-820-1 T4-B-5471-177-1
Abstract: 2a 2a 1a 1a >3 30-150 BC 183, BC 184, B C 107, B C 171, BC 237, BC 183, BC 184, BC 107, BC 171, BC , 513, BC 178, BC 252, BC 262, BC 308, BC 513, BC 205, BC 208, BC 178, BC 252, BC 262, L C 2c 2c 2c 36a , ) 0.34 (25°C) 0.34 (25°C) 0.20 (25°C) 0.15 (25°C) 0.15 (25°C) 2a 2a 2a 2a 2a 2a BC 177, BC 204, BC , (25°C) 0.15 (25°C) 0.50(25°C) 0.15 (25°C) 0.50 (25°C) 2a 2a 2a 2a 2a 2a BC 183, BC 184, BC 107 , ) 0.13 (25°C) 1.00 ($25°C) 2a 2a 2a 2a 2a 2a BC 183, BC 184, BC 107, BC 171, BC 237, BC 183, BC 184 -
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Transistor 2SA 2SB 2SC 2SD 2SK596 2SC906 2sd103 2SA1281 C3885A PA63H MPA68H BD241
Abstract: BC237/238/239 BC237/238/239 Switching and Amplifier Applications · Low Noise: BC239 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES VCEO VEBO , /239 : BC237 : BC238/239 : BC237 : BC238/239 1 TO-92 1. Collector 2. Base 3. Emitter Value 50 30 45 25 6 5 100 500 150 -55 ~ 150 Units V V V V V V mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage : BC237 Fairchild Semiconductor
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bc238a BC238BU BC238CBU BC238CTA BC238TAR BC238TF BC238TFR
Abstract: 200-480 2 0,6 100/5 250 357 BC 238 C F 139 B 300 20 400-850 2 0,6 100/5 250 357 BC 239 B F 139 B 300 20 200-480 2 0,6 100/5 250 357 BC 239 C F 139 B 300 20 400-850 2 0,6 100/5 250 357 *BC 337 cl 16 F 1398 , 239 357 âºBCW 90 A, B, C 427 BD 241,A,B,C TPu 75 âºBC 264, A 849 âºBCW 91 A, B 427 BD 242, A , 300 § 297 *BC 108 C TO-18 300 20 450-900 2 0,95 100/5 300 § 297 BC 109 B TO-18 300 20 240-500 2 0,95 100/5 300 § 297 BC 109 C TO-18 300 20 450-900 2 0,95 100/5 300 § 297 BC 140 cl.6 TO -
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brochage des circuits integres H3C1-07 LB 124 transistor equivalente transistor A2222 equivalent of transistor bc212 bc 214 BFw-11 terminals 3154-S
Abstract: . In der Regel gelten diese Werte bei 25°C wenn nicht anders vermerkt wurde. â'c Bei Transistoren , .transistor 1" contains more than 19000 different transistors and FETâ'™s, all of which are listed , structure n-ch N channel type (FET) n-p More than one transistor with different polarities in one case pnp , amplifier CATV CB CB-radio Colour television appliction CTV Chopper chop Dari Darlington transistor Dual Gate (FET) dg double Paired types Driver stages dr Dual transistor (differential amplifier) dual end -
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irf 5630 transistor 2SB 367 transistor ESM 2878 2sk116 bf199 ksd 302 250v, 10a ZTX751 ZTX3866 2SD2182 2SD1642 2SC4489
Abstract: 12. Table 3. Technical data Transmitter 4.7k + + 1 uF 4.7k 3.3 uF 6.8k BC 239 C , range. The constant current source is realized by the transistor T1, the diodes D1 and D2 as well as the , base of T1. The constant current of the transistor can be adjusted by the potentiometer R2. 3.3 mA Ambient temperature range Light Barrier Using TCA105 2 to 8 mA ­25°C to + 70°C Optical , T1 BC 308 R1 5.6k 2­8 mA Ip 6 IC 3 2 V 0 Adjustment The light barrier is Siemens
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BPX81 TCA335A TAA761A TDA4050B BPW32 TAA761 FLH101 LD261
Abstract: 309 BC 238 BC 239 BC 109 2 N 929 2 N 930 2 N 2483 2 N 2484 K C 509 KC 149 BC 109 2 N 929 2 N 930 BC , transistor fü r B reitband-, N F-, H F - sowie m ittelschnelle S c h a ltstu fe n , erstärkerstufen in E m itte rs c h a ltu n g . npn-Silizium transistor zum E insatz in V ideoendstufen , 179 BC 107 BC 108 BC 109 SC 239 Seite 39 39 39 39 34 34 40 40 32 33 33 34 34 34 35 35/36 35 35 35 , fü r NF-Vor- u n d Treiberstufen SC 110 SC 111 SC 206 BC 107 BC 108 BC 147 BC 148 BC 112 BC 146 B C W -
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transistor vergleichsliste Transistor Vergleichsliste DDR telefunken transistoren VALVO BSW69 vergleichsliste DDR
Abstract: 150 151 G£ Gp Gp Gn Gp Gp G£ Gp Gp * GC *118e KT 3107B BC GC GC AC G C AC BC GC GC BC 313-16 3 0 1 dte , 528 BC 54?A BC 549B BC 550B BC 557A BC 55SB BC 559A BC 56OB BC 582B BCP177B BC« 46A B C i t f 56A BCY , >2 >2 0,3 0,3 0,3 0,45 0,45 150 0,1 0,1 0,1 0,1 0,1 BC 107 B 9 SC 239,I,P, BC 109C 9 SC 239 , Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i , =29-55; c=45-88; d=72-143;e=117-231 Silizium: A=18-35; B=28-71; 0=56-140; D=112-280; E=224-560; F -
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KT 819 transistor 2N2222A 338 SF129D SF137D SSY20B KT819W 400MH
Abstract: . Order Numbers Add the taping-code to the order number. Example: BC 238 C Order-No. of Type Code for TO , high supply voltage Features: · High reverse voltage · Constant ftFeat/c = 10|jA .10 mA Dimensions in , (hJA£ 2 7 0 K /W ,rimb£ 2 5 °C Junction temperature Storage temperature range Maximum thermal , -''EBO - /C - ^ C M P,c, Ti T>» S 921TS 300 300 5 25 100 460 150 S 923TS 250 250 ·» V V V mA mA mW °C °C - 5 5 .+ 150 i t< * > » ·* 1 ; ' f ^thJA 270 K/W T1.2/1225.0888 E 2760 A -
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2761 l transistor transistor k 2761 S921TS a 2761 to-220 ic 921 k 2761 transistor S923TS 15A3DIN E--07
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