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ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
HFA3102B96 Intersil Corporation C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AB, MS-012AB, 14 PIN visit Intersil
HS0-6254RH-Q Intersil Corporation 5 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, DIE-16 visit Intersil

TRANSISTOR BC 239 c

Catalog Datasheet MFG & Type PDF Document Tags

bc 357 transistor

Abstract: transistor BC 55 trois classes de gain statique A â'" B â'" C The transistor BC 239 is grouped in two classes of DC gain B â'" C Le transistor BC 239 est subdivisé en deux classes de gain statique B-C 2/10 358 BC 237 , â'" C The transistor BC 239 is grouped in two classes of small signal current gain B â'" C Le transistor BC 239 est subdivisé en deux classes de gain dynamique B â'" C 2/10 359 BC 237, BC 238, BC 239 , TtON Tamb =+25°c (Unless otherwise stated) (Sauf indications contraires! BC 237 BC 238 BC 239
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transistor BC 238

Abstract: TRANSISTOR BC 239 F ollector-E m itter Voltage : BC237 : BC 238/239 C ollector-E m itter Voltage : BC237 : BC 238/239 Em itter-Base Voltage : BC237 : BC 238/239 C ollecto r C urrent (DC) C ollecto r D issipation Junction Tem , m itter Breakdow n Voltage :BC237 : BC 238/239 Em itter Base Breakdow n Voltage : BC237 : BC 238/239 C ollector C ut-off C urrent : BC237 : BC 238/239 DC C urrent Gain C ollector-E m itter , NPN EPITAXIAL SILICON TRANSISTOR BC237/238/239 SWITCHING AND AMPLIFIER APPLICATIONS T O -92
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transistor BC 238 TRANSISTOR BC 239 F BC237/238/239 BC239

BC 148 TRANSISTOR

Abstract: DIODE ga . ¿135010 UL >64/2 RADUGA 730 IS: K 155 L I )1 TB-Gerät Transistor 8342113 U 2405 S BC 413 B/C BC 149 B/G 8302130 8 332 128 BC 148 B 8382120 BC 148 C 8343042 3C 107 A 8322138 BC 147 B/C Diode AAP 155 3442029 BYP , 8353003 3 3 2 2 10 1 BC 108 C 8372110 BC 160 EI ? 215 8313004 Diode 8442029 /AP 155 Diodenoaar 6452030 AAP , i joC'033 83OIOI? VRP IS: 0 160 D ïransistor 30 239 c SC 239 e SC 239 d sc 239 f SC 237 d SC , sind diese Bauelemente durch Originalersatzteile zu ersetzen. - B e a c h t e n Sie! Sämtliche
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6D22S BC 148 TRANSISTOR DIODE ga transistor BC-148 transistor bc 148 bc 147 B transistor service-mitteilungen 350AF-S

TRANSISTOR BC 213

Abstract: TRANSISTOR BC 181 BC 182 B BC 183 BC 183 A BC 183 B BC 183 C BC 184 BC 184 B BC 184 C BC 237 BC 237 A BC 237 B BC 238 BC 238 A BC 238 B BC 238 C BC 239 BC 239 B BC 239 C BC 181 BC 212 BC 212 A BC 212 B BC 213 BC 213 A BC 213 B BC 213 C BC 214 BC 214 B BC 214 C BC 307 BC 307 VI BC 307 A BC 307 B BC 308 BC 308 VI BC 308 A BC 308 B BC 308 C BC 309 BC 309 VI BC 309 A BC 309 B BC , general purpose transistor selector guide â'" plastic case guide de sélection thomson-csf
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TRANSISTOR BC 213 TRANSISTOR BC 181 bf 239 transistor bf 184 BF 184 NPN transistor BF 212 transistor BCW94 CB-76

TRANSISTOR 237b

Abstract: BC239 NPN transistor BC237/238/239 BC237/238/239 Switching and Amplifier Applications · Low Noise: BC239 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES VCEO VEBO , /239 : BC237 : BC238/239 : BC237 : BC238/239 1 TO-92 1. Collector 2. Base 3. Emitter Value 50 30 45 25 6 5 100 500 150 -55 ~ 150 Units V V V V V V mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage : BC237
Fairchild Semiconductor
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TRANSISTOR 237b BC239 NPN transistor cross reference bc237 BC239CTA transistor bc 238 b BC238 NPN transistor BC238/239 BC237/238 100MH BC237A BC237ATA BC237BBU

transistor bc 238 b

Abstract: ) C haracteristic Sym bol C ollector Em itter Breakdow n Voltage : BC307 : BC 308/309 C ollector Em itter Breakdow n Voltage : BC307 : BC 308/309 Em itter Base Breakdow n Voltage C ollector C ut-off C urrent : BC307 : BC 238/239 DC C urrent Gain C ollector-E m ltter Saturation Voltage B V , ollector-E m ltter Voltage : BC307 : BC 308/309 C ollector-E m ltter Voltage : BC307 : BC 308/309 Em , = V be FAIRCHILD Min -45 -25 C ollector Base Saturation Voltage : BC 237/238 : BC239
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BC307/308/309 BC309

TRANSISTOR 237b

Abstract: BC237 BC237/238/239 BC237/238/239 Switching and Amplifier Applications · Low Noise: BC239 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES VCEO VEBO , /239 : BC237 : BC238/239 : BC237 : BC238/239 1 TO-92 1. Collector 2. Base 3. Emitter Value 50 30 45 25 6 5 100 500 150 -55 ~ 150 Units V V V V V V mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage : BC237
Fairchild Semiconductor
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BC237CTA 237B TRANSISTOR 2bc237 BC238 BC237BTFR BC237BU BC237CBU BC237TF BC237TFR

TRANSISTOR BC 208

Abstract: TRANSISTOR BC 158 10 BC 239 N TO-92F 300 100 20 200 800 t 2 5 0.6 100 150 4.5 4 BC 250 P TO-92F 300 100 20 35 600 t 1 , min (MHz) Cob max (pF) n.f. max (dB) Pd (mW) 'c (mA) VCEO (V) max 'c (mA) ui >°> max (V) â c (mA) BC 107 N TO-18 300 100 45 110 450 â'¢ 2 5 0.6 100 150 6 10 BC 108 N TO-18 300 100 20 110 800 t 2 5 0.6 100 150 6 10 BC 109 N TO-18 300 100 20 110 800 t 2 5 0.6 100 150 6 4 BC 110 N TO-18 300 50 80 30 â'" 2 5 0.6 50 100+ 5 â'" BC 113 N TO-106 200 50 25 200 1000 1 5 0.35 1 60 4 3
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TRANSISTOR BC 208 TRANSISTOR BC 158 TRANSISTOR BC 157 bc 106 transistor transistor BC 209 FOR TRANSISTOR BC 149 B MELF-005 MT-12 S40/S-

C 548 B

Abstract: B549C 546 B BC 5471 1 BC 547 VI BC 547 A BC 547 B BC 5481 » BC 548 VI BC 548 A BC 548 B BC 548 C Ordering , ) 120 BC 546 BC 547, BC 549 BC 548, BC 550 B *FE k/h 150 290 (200 to 450) 200 BC 548, BC 549, BC 550 C , ; Ic = 200 ^A; flg = 2 kQ; f = 10 to 50 Hz; 7am b = 25 °C) h CcBO c ebo BC 546 BC 547 BC 548 300 , (3.2 to 8.5) 2 330 30 ( , = parameter (common-emltter configuration) BC 546 B, B C 547 B, B C 548 B. BC 549 B, BC 550 B
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BC547 BC650 C 548 B B549C C 547 B TRANSISTOR BC650 transistor bc 549 equivalent Q62702-C687 Q62702-C687-V3 Q62702-C687-V1 Q62702-C687-V2 Q62702-C688 Q62702-C688-V3

transistor 2sc 548

Abstract: equivalent transistor bc 649 BC5481» Q62702-C689 BC 548 VI Q62702-C689-V4 BC 548 A Q62702-C689-V1 BC 548 B Q62702-C689-V2 BC 548 C Q62702-C689-V3 Type Ordering code BC 5491' Q62702-C690 BC 549 B Q62702-C690-V1 BC 549 C Q62702-C690-V2 BC5501> Q62702-C691 BC 550 B Q62702-C691 -V1 BC 550 C Q62702-C691-V2 0,4-0,4 2,5 max. =U~ t" b c , BC 548, BC 550 BC 550 hFE group VI A B C k hF e hFE hfs mA UJlB Idh Idh Idh 0.01 90 150 270 2 , BC 547 BC 548 BC 549 BC 550 Transition frequency (VCE = 5 V; /c = 10 mA; f = 100 MHz) h 300
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transistor 2sc 548 equivalent transistor bc 649 BC548BC BC660 2sC 548 B Bc 648 BC5461 Q62702-C688-V1 Q62702-C688-V2 BC546 BC550 BC549

transistor BC 458

Abstract: Transistor BC 308C -92 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C , V V V mA mW °C °C VCEO VEBO IC PC TJ TSTG ©2001 Fairchild Semiconductor Corporation Rev. B1, June 2001 BC307/308/309 Electrical Characteristics Ta=25°C unless otherwise noted Symbol , Voltage : BC307 : BC308/309 Emitter-Base Breakdown Voltage Collector Cut-off Current : BC307 : BC238/239 , (on) fT Cob Cib NF 2 hFE Classification Classification hFE A 120 ~ 220 B 180 ~ 460 C 380 ~ 800
Fairchild Semiconductor
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transistor BC 458 Transistor BC 308C BC 2001 transistor BC307BTA BC308A BC308CBU BC308BBU BC308 BC308C BC308ABU

transistor t4B

Abstract: service-mitteilungen Kontaktfedern kpl. T4-D-5471-041-1 Transistor BC 109 B Transistor BC 178 Transistor AC 178p/AC 179p , . Diode Thermistor BA 560 entspricht 47 Ohm (R 113) , SY 201/SY 221 TNM 47 Der Transistor BC 109 B kann ohne Schaltungsänderungen durch den BC 149 C oder äquivalente Typen ersetzt werden. Der BC 109 B , organisieren. 2. Z e i c h n u n g e n sind nach Möglichkeit im Maßstab 1 < 1 (Verhältnis von Originalzeichnung , n z e i c h n u n g e n können ge druckt werden. Geeignet sind ' 'kräftige" aber nicht "hart" ge
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transistor t4B TRANSISTOR BC 109 Stassfurt Service Mitteilungen VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN servicemitteilungen T4-D-5471-571-1 T4-C-5471-169-1 T4--D-2858-002-1 UF-50 T4-A-5471-820-1 T4-B-5471-177-1

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SA1281 2a 2a 1a 1a >3 30-150 BC 183, BC 184, B C 107, B C 171, BC 237, BC 183, BC 184, BC 107, BC 171, BC , 513, BC 178, BC 252, BC 262, BC 308, BC 513, BC 205, BC 208, BC 178, BC 252, BC 262, L C 2c 2c 2c 36a , ) 0.34 (25°C) 0.34 (25°C) 0.20 (25°C) 0.15 (25°C) 0.15 (25°C) 2a 2a 2a 2a 2a 2a BC 177, BC 204, BC , (25°C) 0.15 (25°C) 0.50(25°C) 0.15 (25°C) 0.50 (25°C) 2a 2a 2a 2a 2a 2a BC 183, BC 184, BC 107 , ) 0.13 (25°C) 1.00 ($25°C) 2a 2a 2a 2a 2a 2a BC 183, BC 184, BC 107, BC 171, BC 237, BC 183, BC 184
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Transistor 2SA 2SB 2SC 2SD 2SA1281 2SK596 C3885A 2SC906 2sd103 PA63H MPA68H BD241

BC238

Abstract: bc238a BC237/238/239 BC237/238/239 Switching and Amplifier Applications · Low Noise: BC239 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES VCEO VEBO , /239 : BC237 : BC238/239 : BC237 : BC238/239 1 TO-92 1. Collector 2. Base 3. Emitter Value 50 30 45 25 6 5 100 500 150 -55 ~ 150 Units V V V V V V mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage : BC237
Fairchild Semiconductor
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bc238a BC238BU BC238CBU BC238CTA BC238TAR BC238TF BC238TFR

catalogue des transistors bipolaires de puissance

Abstract: brochage des circuits integres 200-480 2 0,6 100/5 250 357 BC 238 C F 139 B 300 20 400-850 2 0,6 100/5 250 357 BC 239 B F 139 B 300 20 200-480 2 0,6 100/5 250 357 BC 239 C F 139 B 300 20 400-850 2 0,6 100/5 250 357 *BC 337 cl 16 F 1398 , 239 357 âºBCW 90 A, B, C 427 BD 241,A,B,C TPu 75 âºBC 264, A 849 âºBCW 91 A, B 427 BD 242, A , 300 § 297 *BC 108 C TO-18 300 20 450-900 2 0,95 100/5 300 § 297 BC 109 B TO-18 300 20 240-500 2 0,95 100/5 300 § 297 BC 109 C TO-18 300 20 450-900 2 0,95 100/5 300 § 297 BC 140 cl.6 TO
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catalogue des transistors bipolaires de puissance brochage des circuits integres H3C1-07 LB 124 transistor equivalente transistor A2222 equivalent of transistor bc212 bc 214 3154-S

irf 5630

Abstract: transistor 2SB 367 . In der Regel gelten diese Werte bei 25°C wenn nicht anders vermerkt wurde. â'c Bei Transistoren , .transistor 1" contains more than 19000 different transistors and FETâ'™s, all of which are listed , structure n-ch N channel type (FET) n-p More than one transistor with different polarities in one case pnp , amplifier CATV CB CB-radio Colour television appliction CTV Chopper chop Dari Darlington transistor Dual Gate (FET) dg double Paired types Driver stages dr Dual transistor (differential amplifier) dual end
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irf 5630 transistor 2SB 367 bf199 ksd 302 250v, 10a IRF 3055 transistor ESM 2878 ZTX751 ZTX3866 2SD2182 2SD1642 2SC4489

TAA761A

Abstract: TDA4050B 12. Table 3. Technical data Transmitter 4.7k + + 1 µF 4.7k 3.3 µF 6.8k BC 239 C , range. The constant current source is realized by the transistor T1, the diodes D1 and D2 as well as the , base of T1. The constant current of the transistor can be adjusted by the potentiometer R2. 3.3 mA Ambient temperature range Light Barrier Using TCA105 2 to 8 mA ­25°C to + 70°C Optical , T1 BC 308 R1 5.6k 2­8 mA Ip 6 IC 3 2 V 0 Adjustment The light barrier is
Siemens
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BPX81 TCA335A TAA761A TDA4050B BPW32 TAA761 FLH101 LD261

transistor vergleichsliste

Abstract: Transistor Vergleichsliste DDR 309 BC 238 BC 239 BC 109 2 N 929 2 N 930 2 N 2483 2 N 2484 K C 509 KC 149 BC 109 2 N 929 2 N 930 BC , transistor fü r B reitband-, N F-, H F - sowie m ittelschnelle S c h a ltstu fe n , erstärkerstufen in E m itte rs c h a ltu n g . npn-Silizium transistor zum E insatz in V ideoendstufen , 179 BC 107 BC 108 BC 109 SC 239 Seite 39 39 39 39 34 34 40 40 32 33 33 34 34 34 35 35/36 35 35 35 , fü r NF-Vor- u n d Treiberstufen SC 110 SC 111 SC 206 BC 107 BC 108 BC 147 BC 148 BC 112 BC 146 B C W
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transistor vergleichsliste Transistor Vergleichsliste DDR telefunken transistoren VALVO BSW69 vergleichsliste DDR

KT 819 transistor

Abstract: 2N2222A 338 150 151 G£ Gp Gp Gn Gp Gp G£ Gp Gp * GC *118e KT 3107B BC GC GC AC G C AC BC GC GC BC 313-16 3 0 1 dte , 528 BC 54?A BC 549B BC 550B BC 557A BC 55SB BC 559A BC 56OB BC 582B BCP177B BC« 46A B C i t f 56A BCY , >2 >2 0,3 0,3 0,3 0,45 0,45 150 0,1 0,1 0,1 0,1 0,1 BC 107 B 9 SC 239,I,P, BC 109C 9 SC 239 , Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i , =29-55; c=45-88; d=72-143;e=117-231 Silizium: A=18-35; B=28-71; 0=56-140; D=112-280; E=224-560; F
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KT 819 transistor 2N2222A 338 SF129D SF137D SSY20B KT819W 400MH

2761 l transistor

Abstract: transistor k 2761 . Order Numbers Add the taping-code to the order number. Example: BC 238 C Order-No. of Type Code for TO , high supply voltage Features: · High reverse voltage · Constant ftFeat/c = 10|jA .10 mA Dimensions in , (hJA£ 2 7 0 K /W ,rimb£ 2 5 °C Junction temperature Storage temperature range Maximum thermal , -''EBO - /C - ^ C M P,c, Ti T>» S 921TS 300 300 5 25 100 460 150 S 923TS 250 250 ·» V V V mA mA mW °C °C - 5 5 .+ 150 i t< * > » ·* 1 ; ' f ^thJA 270 K/W T1.2/1225.0888 E 2760 A
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2761 l transistor transistor k 2761 S921TS TRANSISTOR BC 239 c a 2761 to-220 k 2761 transistor S923TS 15A3DIN E--07
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