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TRANSISTOR 436

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: BD434/436/438 PNP EPITAXIAL SILICON TRANSISTOR TO -126 MEDIUM POW ER LINEAR AND SWITCHING , cte ristic Collector B a s e Voltage : BD 434 : BD 436 : BD 438 Collector Emitter Voltage : BD 434 : BD 436 : B D 438 Collector Emitter V oltage : BD 434 : BD436 BD436 : BD438 BD438 Emitter B a s e Voltage , : BD434/436 : BD 438 : A L L D E V IC E : BD434/436 : BD438 BD438 * Collector Emitter Saturation Voltage : BD434 BD434 , lse T est : P W = 3 0 0 u S, duty Cycle=1.5% Pulsed 453 ELECTRONICS BD434/436/438 DC CURRENT ... OCR Scan
datasheet

2 pages,
107.83 Kb

TRANSISTOR BD 437 transistor 438 BD434/436/438 TEXT
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Abstract: BD434/436/438 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS · Complement to BD433 BD433, BD435 BD435 and BD437 BD437 respectively ABSOLUTE MAXIMUM RATINGS Characteristic , 30 : BD434/436 140 140 : ALL DEVICE VCE = - 1V, IC = - 500mA 85 : BD434/436 VCE , VCE = - 1V, IC = - 2A VCE = - 1V, IC = - 250mA 3 V MHz BD434/436/438 PNP EPITAXIAL SILICON TRANSISTOR Samsung Electronics ... Samsung Electronics
Original
datasheet

2 pages,
11.99 Kb

BD433 BD435 BD437 transistor 438 BD436 BD438 transistor BD434 BD434 TRANSISTOR 436 TRANSISTOR bd436 BD434/436/438 TEXT
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Abstract: BD434/436/438 BD434/436/438 Medium Power Linear and Switching Applications · Complement to , Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter , , June 2001 BD434/436/438 Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO , Current * DC Current Gain : BD434/436 : BD438 BD438 : ALL DEVICE : BD434/436 : BD438 BD438 VCE(sat , 2001 BD434/436/438 Typical Characteristics 1000 -1 100 VCE(sat)[V], SATURATION ... Fairchild Semiconductor
Original
datasheet

8 pages,
115.37 Kb

IC 0247 BD436 cross reference BD434/436/438 BD433 BD435 BD437 TEXT
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Abstract: BD434/436/438 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING , : IcBO IcEO Iebo : BD 434/436 Veb = ' 5V, h FE VCE= - 5V, lc = - 10m A Iq = 0 40 140 30 BD438 BD438 140 140 : ALL DEVICE VCE= - 1V, lc = - 500m A 85 : BD 434/436 , VCE= - 1 V , lc = - 2 A VCE= - 1V, lc = - 250m A 3 V MHz BD434/436/438 PNP EPITAXIAL SILICON TRANSISTOR COLLECTOR EMITTER SATURATION VOLTAGE - 0 .0 1 - 0 . 0 5 - 0.1 - 0 .5 - 1 ... OCR Scan
datasheet

2 pages,
41.52 Kb

BD434/436/438 TEXT
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Abstract: BD434/436/438 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS · Complement to BD433 BD433, BD43S BD43S and BD437 BD437 respectively TO -126 ABSOLUTE MAXIMUM RATINGS Characteristic C ollecto r Base Voltage BD434 BD434 BD436 BD436 BD438 BD438 BD434 BD434 BD436 BD436 BD438 BD438 BD434 BD434 BD436 BD436 BD438 BD438 Symbol VcBO , BD434/436/438 PNP EPITAXIAL SILICON TRANSISTOR COLLECTOR EMITTER SATURATION VOLTAGE DC CURRENT , Current Gain : BD434/436 : BD438 BD438 : A LL DEVICE : BD434/436 : BD438 BD438 'C o lle c to r E m itter Saturation ... OCR Scan
datasheet

2 pages,
64.72 Kb

transistor bd438 TRANSISTOR bd436 em 436 BD438 bd436 BD434/436/438 BD433 BD43S BD437 TEXT
datasheet frame
Abstract: BD434/436/438 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • Complement to BD433 BD433, BD435 BD435 and BD437 BD437 respectively ABSOLUTE MAXIMUM RATINGS Characteristic , Manufacturer BD434/436/438 PNP EPITAXIAL SILICON TRANSISTOR DC CURRENT GAIN COLLECTOR EMITTER SATURATION , Veb = - 5V, lc= 0 -1 mA *DC Current Gain : BD434/436 hpe Vce = -5V, lc=- 10mA 40 140 : BD438 BD438 30 140 : ALL DEVICE Vce = - 1V, lc=- 500mA 85 140 : BD434/436 Vce = - 1V, lc=-2A 50 ... OCR Scan
datasheet

2 pages,
72.42 Kb

BD433 BD435 BD437 BD438 TRANSISTOR bd436 TRANSISTOR 436 BD434 BD436 transistor bd438 BD434/436/438 TEXT
datasheet frame
Abstract: BD434/436/438 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO-126 · Complement to BD433 BD433, BD435 BD435 and BD437 BD437 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Collector Emitter Voltage Collector Emitter Voltage Symbol , Corporation BD434/436/438 PNP EPITAXIAL SILICON TRANSISTOR TRADEMARKS The following are registered , Cutoff Current *DC Current Gain : BD434/436 : BD438 BD438 : ALL DEVICE : BD434/436 : BD438 BD438 * Collector ... Fairchild Semiconductor
Original
datasheet

3 pages,
68.26 Kb

BD438 BD437 BD435 BD434 BD433 TRANSISTOR bd436 Transistor bD434 TRANSISTOR 436 BD436 BD434/436/438 TEXT
datasheet frame
Abstract: BD434/436/438 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SW ITCHING APPLICATIONS · Complement to BD433 BD433, BD435 BD435 and BD437 BD437 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic , *DC Current Gain : BD434/436 : BD438 BD438 : ALL DEVICE : BD434/436 : BD438 BD438 * Collector Emitter Saturation , e m ic o n d u c t o r ^ 1 9 9 9 F airchild S e m iconductor Corporation TM BD434/436/438 PNP EPITAXIAL SILICON TRANSISTOR DC CURRENT GAIN -0 .1 -0 2 -0 .5 -1 -2 -5 -1 ... OCR Scan
datasheet

3 pages,
77.73 Kb

BD438 BD434/436/438 BD433 BD435 BD437 TEXT
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Abstract: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4571 2SC4571 , isc Silicon NPN RF Transistor 2SC4571 2SC4571 ELECTRICAL CHARACTERISTICS TC=25 unless otherwise , Semiconductor isc Silicon NPN RF Transistor isc Websitewww.iscsemi.cn isc RF Product Specification 2SC4571 2SC4571 isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor , Silicon NPN RF Transistor 2SC4571 2SC4571 VCE = 5 V, IC = 3 mA, ZO = 50 S21 S11 Freque. S12 ... INCHANGE Semiconductor
Original
datasheet

9 pages,
137.96 Kb

RF NPN POWER TRANSISTOR 2.5 GHZ NPN transistor mhz s-parameter 400-125 2SC4571 data sheet 702 TRANSISTOR npn TEXT
datasheet frame
Abstract: BD434/436(PNP) TO-126 Transistor TO-126 1. EMITTER 2. COLLECOTR 3.000 7.400 7.800 2.500 1.100 2.900 1.500 3.900 4.100 0.000 0.300 3. BASE 3.200 10.60 0 11.00 0 3 2 Features 1 2.100 2.300 1.170 1.370 15.30 0 15.70 0 Amplifier and switching applications MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol VCBO Parameter Collector-Base Voltage BD434 BD434 BD436 BD436 VCEO Collector-Emitter , . BD434/436(PNP) TO-126 Transistor Typical Characteristics - ... Original
datasheet

2 pages,
175.5 Kb

to-126 transistor transistor BD434 bd436 TRANSISTOR 436 BD434 TRANSISTOR bd436 BD434/436 TEXT
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Archived Files

Abstract Saved from Date Saved File Size Type Download
Grounded Emitter Transistor in SOT343 ! VCE = 0.5 V IC = 20 mA ! Common Emitter S-Parameters 43.6 0.3073 -115.8 1.000 0.5531 -165.1 9.481 87.6 0.0542 43.3 0.2888 -122.5 1.100 0.5565 6.797 77.1 0.0652 43.6 0.2495 -144.7 1.500 0.5702 176.7 6.370 74.7 0.0679 43.6 0.2414 -149.6 1.600 0.5700 173.7 5.949 72.5 0.0707 43.6 0.2371 -153.2 1.700 0.5733 171.2 5.587 143.7 3.105 46.9 0.1103 36.9 0.2532 160.7 3.200 0.6228 140.3 2.893 43.6 0.1158 35.9
/datasheets/files/siemens/ehdata/spar/bfp420/2pv5020m.s2p
Siemens 09/08/1994 3.01 Kb S2P 2pv5020m.s2p
! SIEMENS Discrete & RF Semiconductors ! BFY181 BFY181 ! Si NPN RF Bipolar Junction Transistor in MICRO-X ! VCE = 0.5 V IC = 12 mA ! Common Emitter S-Parameters: May 1997 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz 0.6485 -31.1 0.150 0.5883 -108.5 10.908 123.7 0.0365 43.6 0.5428 -37.9 0.200 0.5895 -124.3 46.2 0.0814 43.6 0.2795 -71.0 1.900 0.6208 164.0 1.092 43.6 0.0840 43.6 0.2818 -73.5
/datasheets/files/infineon/ehdata/spar/bfy181/xcv5012m.s2p
Infineon 16/05/1997 2.78 Kb S2P xcv5012m.s2p
General info NPN transistor in a TO-92; SOT54 plastic package. PNP complements: BC559 BC559 and BC560 BC560. RFS Chemical content BC550C BC550C   9332 436 00112   week 6, 2005 Standard Marking Bulk Pack SOT54 RFS Chemical content BC550C BC550C BC550C BC550C T/R 9332 436 00116     9332 436 00126   week 6, 2005 Standard Marking Ammopack, Radial SOT54 RFS
/datasheets/files/philips/pip/bc549_550_4.html
Philips 15/06/2005 6.74 Kb HTML bc549_550_4.html
! SIEMENS Small Signal Semiconductors ! BFQ81 BFQ81 ! Si NPN RF Bipolar Junction Transistor in SOT23 ! VCE = 1 V IC = 1 mA ! Common Emitter S-Parameters 0.900 0.6117 -126.7 1.895 88.6 0.1915 28.9 0.6277 -43.6 1.000 0.5900 -136.0 1.763 82.7 168.9 1.150 49.8 0.1786 29.1 0.5182 -60.8 2.000 0.5593 158.6 1.061 43.6 0.1795 33.3 0.919 33.9 0.1985 43.6 0.4847 -77.1 2.500 0.6028 136.7 0.888 32.0 0.2082 45.7 0.4817
/datasheets/files/siemens/ehdata/spar/bfq81/ra1v01m0-v1.s2p
Siemens 09/08/1994 1.95 Kb S2P ra1v01m0-v1.s2p
BC549 BC549_550_3 Product information page BC549 BC549; BC550 BC550; NPN general purpose transistors General info NPN transistor in a TO-92; SOT54 plastic package. PNP , Radial SOT54 RFS BC550C BC550C BC550C BC550C 9332 436 00112 Standard Marking * Bulk Pack SOT54 RFS BC550C BC550C BC550C BC550C T/R 9332 436 00116 Standard Marking * Reel Pack, Radial SOT54 RFS BC550C BC550C   9332 436 00126 Standard Marking * Ammopack, Radial SOT54 RFS WWW View
/datasheets/files/philips/pip/bc549_550_3.html
Philips 23/04/2003 4.28 Kb HTML bc549_550_3.html
! SIEMENS Small Signal Semiconductors ! BFR93A BFR93A ! Si NPN RF Bipolar Junction Transistor in SOT23 ! VCE = 3.5 V IC = 10 mA ! Common Emitter S-Parameters 94.2 0.0671 58.2 0.3515 -44.1 0.500 0.3731 -158.4 5.815 88.3 0.0776 59.7 0.3168 -43.6 0.600 0.3697 -167.6 4.906 83.4 0.0886 60.8 0.2933 -43.6 0.700 0.3699 -174.8 4.242 79.0 46.1 0.2031 -104.5 3.000 0.5087 109.7 1.205 18.0 0.3651 43.6 0.2057 -113.7 ! ! SIEMENS
/datasheets/files/infineon/ehdata/spar/bfr93a/rl3v510m.s2p
Infineon 16/11/1997 2.38 Kb S2P rl3v510m.s2p
Bipolar Junction Transistor in SOT143 ! VCE = 0.75 V IC = 10 mA ! Common Emitter S-Parameters 105.5 0.0383 43.6 0.5516 -26.9 0.500 0.4171 -142.2 5.638 98.6 0.0413 42.2 0.5179 -27.2 0.4068 -176.1 3.306 79.8 0.0532 43.6 0.4639 -29.6 1.000 0.4069 177.7 2.984 76.1 0.0558 43.6 0.4573 -30.7 1.100 0.4139 171.8 2.742 72.7 0.0595 43.8 0.4538 -31.8 1.200 0.4146 -38.9 1.700 0.4459 146.5 1.798 54.6 0.0781 43.6 0.4345 -40.6 1.800 0.4499 142.7 1.706
/datasheets/files/infineon/ehdata/spar/bfp280/p2v7510m.s2p
Infineon 29/09/1997 2.78 Kb S2P p2v7510m.s2p
! SIEMENS Discrete & RF Semiconductors ! BFY181 BFY181 ! Si NPN RF Bipolar Junction Transistor in MICRO-X ! VCE = 8 V IC = 8 mA ! Common Emitter S-Parameters: May 1997 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz -141.1 6.103 90.9 0.0553 43.6 0.5419 -38.6 1.300 0.4820 -146.3 5.667 88.2 0.0573 43.6 -42.5 1.700 0.4704 -160.5 4.451 77.6 0.0645 44.2 0.5064 -43.6 1.800 0.4676 -164.3 4.206
/datasheets/files/infineon/ehdata/spar/bfy181/xc8v08m0.s2p
Infineon 16/05/1997 2.78 Kb S2P xc8v08m0.s2p
BC549 BC549_550_3 BC549 BC549; BC550 BC550     NPN general purpose transistors NPN transistor in a TO-92; SOT54 plastic package. PNP complements: BC559 BC559 and BC560 BC560. 9332 436 00116 Standard Marking * Reel Pack, Radial SOT54 RFS BC550C BC550C BC550C BC550C 9332 436 00112 Standard Marking * Bulk Pack SOT54 RFS BC550C BC550C BC550C BC550C 9332 436 00126 Standard
/datasheets/files/philips/pip/bc549_550_3-v1.html
Philips 14/02/2002 12.65 Kb HTML bc549_550_3-v1.html
! SIEMENS Small Signal Semiconductors ! BFR181 BFR181 ! Si NPN RF Bipolar Junction Transistor in SOT23 ! VCE = 1 V IC = 1 mA ! Common Emitter S-Parameters 1.887 83.6 0.1654 43.8 0.6763 -37.6 1.700 0.3959 -114.0 1.853 81.9 0.1672 43.6 0.6719 -38.0 1.750 0.3842 -116.6 1.814 80.3 0.1686 43.6 0.6676 -38.4 1.800 0.3755 -119.5 1.791 2.200 0.3205 -145.3 1.589 66.2 0.1810 44.2 0.6156 -43.6 2.400 0.3021 -159.0 1.490 60.5
/datasheets/files/siemens/ehdata/spar/bfr181/r31v01m0-v1.s2p
Siemens 09/08/1994 2.35 Kb S2P r31v01m0-v1.s2p