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TRANSISTOR 436

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: BD434/436/438 PNP EPITAXIAL SILICON TRANSISTOR TO -126 MEDIUM POW ER LINEAR AND SWITCHING , cte ristic Collector B a s e Voltage : BD 434 : BD 436 : BD 438 Collector Emitter Voltage : BD 434 : BD 436 : B D 438 Collector Emitter V oltage : BD 434 : BD436 : BD438 Emitter B a s e Voltage , : BD434/436 : BD 438 : A L L D E V IC E : BD434/436 : BD438 * Collector Emitter Saturation Voltage : BD434 , lse T est : P W = 3 0 0 u S, duty Cycle=1.5% Pulsed 453 ELECTRONICS BD434/436/438 DC CURRENT -
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transistor 438 TRANSISTOR BD 436 A8550 BD433B TRANSISTOR 434 TRANSISTOR BD 437 BD434/436/438 BD433 BD434/436
Abstract: BD434/436/438 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS · Complement to BD433, BD435 and BD437 respectively ABSOLUTE MAXIMUM RATINGS Characteristic , 30 : BD434/436 140 140 : ALL DEVICE VCE = - 1V, IC = - 500mA 85 : BD434/436 VCE , VCE = - 1V, IC = - 2A VCE = - 1V, IC = - 250mA 3 V MHz BD434/436/438 PNP EPITAXIAL SILICON TRANSISTOR Samsung Electronics Samsung Electronics
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TRANSISTOR bd436 transistor BD434
Abstract: BD434/436/438 BD434/436/438 Medium Power Linear and Switching Applications · Complement to , Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter , , June 2001 BD434/436/438 Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO , Current * DC Current Gain : BD434/436 : BD438 : ALL DEVICE : BD434/436 : BD438 VCE(sat , 2001 BD434/436/438 Typical Characteristics 1000 -1 100 VCE(sat)[V], SATURATION Fairchild Semiconductor
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BD436 cross reference IC 0247 BD438S BD438STU
Abstract: BD434/436/438 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING , : IcBO IcEO Iebo : BD 434/436 Veb = ' 5V, h FE VCE= - 5V, lc = - 10m A Iq = 0 40 140 30 BD438 140 140 : ALL DEVICE VCE= - 1V, lc = - 500m A 85 : BD 434/436 , VCE= - 1 V , lc = - 2 A VCE= - 1V, lc = - 250m A 3 V MHz BD434/436/438 PNP EPITAXIAL SILICON TRANSISTOR COLLECTOR EMITTER SATURATION VOLTAGE - 0 .0 1 - 0 . 0 5 - 0.1 - 0 .5 - 1 -
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Abstract: BD434/436/438 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS · Complement to BD433, BD43S and BD437 respectively TO -126 ABSOLUTE MAXIMUM RATINGS Characteristic C ollecto r Base Voltage BD434 BD436 BD438 BD434 BD436 BD438 BD434 BD436 BD438 Symbol VcBO , BD434/436/438 PNP EPITAXIAL SILICON TRANSISTOR COLLECTOR EMITTER SATURATION VOLTAGE DC CURRENT , Current Gain : BD434/436 : BD438 : A LL DEVICE : BD434/436 : BD438 'C o lle c to r E m itter Saturation -
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em 436 transistor bd438
Abstract: BD434/436/438 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS â'¢ Complement to BD433, BD435 and BD437 respectively ABSOLUTE MAXIMUM RATINGS Characteristic , Manufacturer BD434/436/438 PNP EPITAXIAL SILICON TRANSISTOR DC CURRENT GAIN COLLECTOR EMITTER SATURATION , Veb = - 5V, lc= 0 -1 mA *DC Current Gain : BD434/436 hpe Vce = -5V, lc=- 10mA 40 140 : BD438 30 140 : ALL DEVICE Vce = - 1V, lc=- 500mA 85 140 : BD434/436 Vce = - 1V, lc=-2A 50 -
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U501 BD434-BD436
Abstract: BD434/436/438 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO-126 · Complement to BD433, BD435 and BD437 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Collector Emitter Voltage Collector Emitter Voltage Symbol , Corporation BD434/436/438 PNP EPITAXIAL SILICON TRANSISTOR TRADEMARKS The following are registered , Cutoff Current *DC Current Gain : BD434/436 : BD438 : ALL DEVICE : BD434/436 : BD438 * Collector Fairchild Semiconductor
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Abstract: BD434/436/438 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SW ITCHING APPLICATIONS · Complement to BD433, BD435 and BD437 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic , *DC Current Gain : BD434/436 : BD438 : ALL DEVICE : BD434/436 : BD438 * Collector Emitter Saturation , e m ic o n d u c t o r ^ 1 9 9 9 F airchild S e m iconductor Corporation TM BD434/436/438 PNP EPITAXIAL SILICON TRANSISTOR DC CURRENT GAIN -0 .1 -0 2 -0 .5 -1 -2 -5 -1 -
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Abstract: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4571 , isc Silicon NPN RF Transistor 2SC4571 ELECTRICAL CHARACTERISTICS TC=25 unless otherwise , Semiconductor isc Silicon NPN RF Transistor isc Websitewww.iscsemi.cn isc RF Product Specification 2SC4571 isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor , Silicon NPN RF Transistor 2SC4571 VCE = 5 V, IC = 3 mA, ZO = 50 S21 S11 Freque. S12 INCHANGE Semiconductor
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data sheet 702 TRANSISTOR npn 400-125 NPN transistor mhz s-parameter RF NPN POWER TRANSISTOR 2.5 GHZ
Abstract: BD434/436(PNP) TO-126 Transistor TO-126 1. EMITTER 2. COLLECOTR 3.000 7.400 7.800 2.500 1.100 2.900 1.500 3.900 4.100 0.000 0.300 3. BASE 3.200 10.60 0 11.00 0 3 2 Features 1 2.100 2.300 1.170 1.370 15.30 0 15.70 0 Amplifier and switching applications MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol VCBO Parameter Collector-Base Voltage BD434 BD436 VCEO Collector-Emitter , . BD434/436(PNP) TO-126 Transistor Typical Characteristics - -
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to-126 transistor
Abstract: BD434/436/438 BD434/436/438 Medium Power Linear and Switching Applications · Complement to , Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base , . A, February 2000 BD434/436/438 Electrical Characteristics TC=25°C unless otherwise noted , Cut-off Current * DC Current Gain : BD434/436 : BD438 : ALL DEVICE : BD434/436 : BD438 VCE(sat , , February 2000 BD434/436/438 Typical Characteristics ©2000 Fairchild Semiconductor International Fairchild Semiconductor
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Abstract: Transistors SIEMENS AKTIENGESELLSCHAF J68 BD434 BD 436 D _ - BD 438 BD440 BD442 Power transistors for com plem entary AF stages The transistors BO 434, BD 436, BD 438, BD 440 and BD 442 are PNP , paired BD 436 BD 436/BD 435 paired BD 438 BD 4380BD 437 paired BD 440 BD 440/BD 439 paired Bd 442 BD 442 , " Approx. weight O.S g Dimensions in mm Transistor fixing with M 3 screw Starting torque max. 0 .8 Nm , Junction to mounting area -V ceo -V ces -V cbo -V ebo BD 434 BD 436 BD 438 BD 440 BD 442 22 22 22 5 4 7 -
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power transistor mrc 438 mrc 436 mrc 438 mrc 442 transistor mrc 439 mrc 437 0Q043 434/BD 436/BD 442/BD DIN137 Q62702-
Abstract: BD434/436/438 BD434/436/438 Medium Power Linear and Switching Applications · Complement to , Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO , Current Gain : BD434/436 : BD438 : ALL DEVICE : BD434/436 : BD438 VCE(sat) VBE(on) fT , /436/438 Electrical Characteristics TC=25°C unless otherwise noted BD434/436/438 Typical , Rev. A, February 2000 BD434/436/438 Package Demensions 8.00 ±0.30 11.00 ø3.20 ±0.10 Fairchild Semiconductor
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Abstract: Transistors J68 D _ SIEMENS AKTIEN6ESELLSCHAF BD434 BD 436 -BD 438 BD440 BD442 Power transistors for complementary AF stages The transistors BO 434, BD 436, BD 438, BD 440 and BD 442 are PNP silicon epibase power , 436 BD 436/BD 435 paired BD 438 BD 4380BD 437 paired BD 440 BD 440/BD 439 paired Bd 442 BD 442/BD 441 , â LSI ~IO.7sO.2- T is ¡Q totojK- Approx. weight O.S g Dimensions in mm Transistor fixing with M , . Maximum ratings BD 434 BD 436 BD 438 BD 440 BD 442 Collector-emitter voltage -Vceo 22 32 45 60 80 V -
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Q62702-D202 bo434 b0436 BD 434 transistor BD 141 transistor AF 11 BD BD441 Q62702-D217 Q62702-D204 Q62702-D218 Q62702-D213
Abstract: 2SC 434 2SC 435 2SC 436 Absolute maximum rat ings Storage temperature Tstg °C -55~ + 150 , "C Vceâ'"5 V 2SC 432 L 434 \ 436 2SC\ 431 433 rv^435 10 15 20 Collector , Collector voltage Vce(V) POWER TRANSISTOR Type Pc [w] IC I IB (A] I (A) VCBO [v] VCEO (V) Vces (V) hFE (STD) f ae (kHz) T, [°C] Dimensions Germanium transistor 2SB205 80 -20 -3 - 80 - -60 40 2.5 85 Fig , -30 -140 -85 100 Silicon transistor 2SC407 100 10 3 150 100 - 20 400 150 Fig.27 2SC408 150 -
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2SB206 2SB208 2SB208A 2SB212 2SB214 2SC412 GERMANIUM TRANSISTOR 2SC1466 2sd206 1BMAX11 MAX50 MAX30 2SB207
Abstract: 2SK2610 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2610 Chopper Regulator, DC-DC Converter and Motor Drive Applications Low drain-source ON resistance High forward , 90 V, Tch = 25°C (initial), L = 43.6 mH, IAR = 5 A, RG = 25 Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle , THERMAL IMPEDANCE rth (t)/Rth (ch-c) RG = 25 VDD = 90 V, L = 43.6 mH E AS = 1 B VDSS L I2 Toshiba
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K2610 transistor k2610 Toshiba K2610 k2610 toshiba SC-65 2-16C1B
Abstract: BD434/436/438 BD434/436/438 Medium Power Linear and Switching Applications · Complement to , Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO , : BD434/436 : BD438 : ALL DEVICE : BD434/436 : BD438 VCE(sat) VBE(on) fT , =300us, duty Cycle=1.5% Pulsed ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 BD434/436/438 Electrical Characteristics TC=25°C unless otherwise noted BD434/436/438 Typical Fairchild Semiconductor
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Abstract: Philips Semiconductors Product specification NPN 8 GHz wideband transistor -7^3/-/ 7 BFG65 philips international DESCRIPTION NPN transistor in a four-lead dual emitter plastic envelope (SOT103). , Semiconductors Product specification - Tâ'"31 â'"17 NPN 8 GHz wideband transistor BFG65 PHILIPS INTERNATIONAL , transistor BFU65 PHILIPS INTERNATIONAL SbE D â  7110flBb 0045DA4 TS7 «PHIN 400 MBB330 , Philips Semiconductors NPN 8 GHz wideband transistor Product specification Tâ'"31 â'"17 BFG65 philips -
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TAG 9223 TAG 8653 4221 transistor transistor tag 306 702 P TRANSISTOR 809 npn 0045D
Abstract: transistor N AMER PHILIPS/DISCRETE BFG65 b'iE ]> DESCRIPTION NPN transistor in a four-lead dual emitter , Semiconductors _ ^faS 3^31 00311^4 445 IB APX Product specification NPN 8 GHz wideband transistor BFG65 - N , specification NPN 8 GHz wideband transistor BFG65 N AMER PHIL I PS/DISCRETE bTE T> 400 MB6330 , OOBllTb 21fl M APX Product specification NPN 8 GHz wideband transistor BFG65 N AP1ER PHILIPS/DISCRETE , OOBllTb 21fl M APX Product specification NPN 8 GHz wideband transistor BFG65 N AUER PHILIPS/DISCRETE b^E -
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MSB037 transistor 3702 558 npn D 1414 transistor MBB332
Abstract: Philips Semiconductors Product specification NPN 8 GHz wideband transistor T&hl 7 BFG65 PHILIPS INTERNATIONAL DESCRIPTION NPN transistor in a four-lead dual emitter plastic envelope (SOT103). It is designed , Philips Semiconductors Product specification - Tâ'"31 â'"17 NPN 8 GHz wideband transistor BFG65 PHILIPS , specification Tâ'"31 â'"17 NPN 8 GHz wideband transistor BFCJ65 PHILIPS INTERNATIONAL ShE D â  7110flSb 0045064 , approved CECC 50 000 (issue 4), 1986 Philips Semiconductors NPN 8 GHz wideband transistor Product -
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transistor SOT103 D 799 transistor 2566 transistor 4809 SOT103 SBE 461
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