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TRANSISTOR+436

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: BD434/436/438 PNP EPITAXIAL SILICON TRANSISTOR TO -126 MEDIUM POW ER LINEAR AND SWITCHING , cte ristic Collector B a s e Voltage : BD 434 : BD 436 : BD 438 Collector Emitter Voltage : BD 434 : BD 436 : B D 438 Collector Emitter V oltage : BD 434 : BD436 : BD438 Emitter B a s e Voltage , : BD434/436 : BD 438 : A L L D E V IC E : BD434/436 : BD438 * Collector Emitter Saturation Voltage : BD434 , lse T est : P W = 3 0 0 u S, duty Cycle=1.5% Pulsed 453 ELECTRONICS BD434/436/438 DC CURRENT -
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transistor 438 TRANSISTOR BD 436 A8550 BD433B TRANSISTOR 434 TRANSISTOR BD 437 BD434/436/438 BD433 BD434/436
Abstract: BD434/436/438 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS · Complement to BD433, BD435 and BD437 respectively ABSOLUTE MAXIMUM RATINGS Characteristic V - 32 V - 45 V - 22 V : BD436 - 32 V : BD438 - 45 V - 22 , 30 : BD434/436 140 140 : ALL DEVICE VCE = - 1V, IC = - 500mA 85 : BD434/436 VCE , VCE = - 1V, IC = - 2A VCE = - 1V, IC = - 250mA 3 V MHz BD434/436/438 PNP EPITAXIAL Samsung Electronics
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TRANSISTOR bd436 TRANSISTOR 436 transistor BD434
Abstract: BD434/436/438 BD434/436/438 Medium Power Linear and Switching Applications · Complement to , , June 2001 BD434/436/438 Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO , Current * DC Current Gain : BD434/436 : BD438 : ALL DEVICE : BD434/436 : BD438 VCE(sat , 2001 BD434/436/438 Typical Characteristics 1000 -1 100 VCE(sat)[V], SATURATION , Corporation Rev. A1, June 2001 BD434/436/438 Package Demensions TO-126 ±0.10 3.90 8.00 Fairchild Semiconductor
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BD436 cross reference IC 0247 BD438S BD438STU
Abstract: BD434/436/438 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS â'¢ C om plem ent to BD433, BD 435 and BD437 respectively ABSOLUTE MAXIMUM RATINGS , : IcBO IcEO Iebo : BD 434/436 Veb = ' 5V, h FE VCE= - 5V, lc = - 10m A Iq = 0 40 140 30 BD438 140 140 : ALL DEVICE VCE= - 1V, lc = - 500m A 85 : BD 434/436 , VCE= - 1 V , lc = - 2 A VCE= - 1V, lc = - 250m A 3 V MHz BD434/436/438 PNP EPITAXIAL -
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Abstract: BD434/436/438 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS · Complement to BD433, BD43S and BD437 respectively TO -126 ABSOLUTE MAXIMUM RATINGS Characteristic C ollecto r Base Voltage BD434 BD436 BD438 BD434 BD436 BD438 BD434 BD436 BD438 Symbol VcBO , Current Gain : BD434/436 : BD438 : A LL DEVICE : BD434/436 : BD438 'C o lle c to r E m itter Saturation , BD434/436/438 PNP EPITAXIAL SILICON TRANSISTOR COLLECTOR EMITTER SATURATION VOLTAGE DC CURRENT -
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em 436 transistor bd438
Abstract: BD434/436/438 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS â'¢ Complement to BD433, BD435 and BD437 respectively ABSOLUTE MAXIMUM RATINGS Characteristic , Veb = - 5V, lc= 0 -1 mA *DC Current Gain : BD434/436 hpe Vce = -5V, lc=- 10mA 40 140 : BD438 30 140 : ALL DEVICE Vce = - 1V, lc=- 500mA 85 140 : BD434/436 Vce = - 1V, lc=-2A 50 , Manufacturer BD434/436/438 PNP EPITAXIAL SILICON TRANSISTOR DC CURRENT GAIN COLLECTOR EMITTER SATURATION -
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U501 BD434-BD436
Abstract: BD434/436/438 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO-126 · Complement to BD433, BD435 and BD437 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Collector Emitter Voltage Collector Emitter Voltage Symbol , Cutoff Current *DC Current Gain : BD434/436 : BD438 : ALL DEVICE : BD434/436 : BD438 * Collector , Corporation BD434/436/438 PNP EPITAXIAL SILICON TRANSISTOR TRADEMARKS The following are registered Fairchild Semiconductor
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Abstract: BD434/436/438 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SW ITCHING APPLICATIONS · Complement to BD433, BD435 and BD437 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Collector Base Voltage BD434 BD436 BD438 Collector Emitter Voltage BD434 BD436 BD438 Collector Emitter , *DC Current Gain : BD434/436 : BD438 : ALL DEVICE : BD434/436 : BD438 * Collector Emitter Saturation , e m ic o n d u c t o r ^ 1 9 9 9 F airchild S e m iconductor Corporation TM BD434/436/438 -
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Abstract: 0.567 -41.5 700 0.461 -114.8 3.546 93.2 0.115 45.7 0.532 -43.6 800 , 58.7 0.176 43.6 0.383 -62.6 1500 0.358 177.6 1.899 55.2 0.184 43.7 , 0.360 167.7 1.720 48.3 0.200 43.6 0.366 -68.5 1800 0.361 163.3 1.648 45.3 0.209 43.6 0.361 -70.6 1900 0.363 158.7 1.582 42.3 0.218 43.4 INCHANGE Semiconductor
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2SC4571 data sheet 702 TRANSISTOR npn 400-125 NPN transistor mhz s-parameter RF NPN POWER TRANSISTOR 2.5 GHZ
Abstract: BD434/436(PNP) TO-126 Transistor TO-126 1. EMITTER 2. COLLECOTR 3.000 7.400 7.800 2.500 1.100 2.900 1.500 3.900 4.100 0.000 0.300 3. BASE 3.200 10.60 0 11.00 0 3 2 Features 1 2.100 2.300 1.170 1.370 15.30 0 15.70 0 Amplifier and switching applications MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol VCBO Parameter Collector-Base Voltage BD434 BD436 VCEO Collector-Emitter , . BD434/436(PNP) TO-126 Transistor Typical Characteristics - -
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to-126 transistor
Abstract: BD434/436/438 BD434/436/438 Medium Power Linear and Switching Applications · Complement to , . A, February 2000 BD434/436/438 Electrical Characteristics TC=25°C unless otherwise noted , Cut-off Current * DC Current Gain : BD434/436 : BD438 : ALL DEVICE : BD434/436 : BD438 VCE(sat , , February 2000 BD434/436/438 Typical Characteristics ©2000 Fairchild Semiconductor International Rev. A, February 2000 BD434/436/438 Package Dimensions TO-126 ±0.10 3.90 8.00 ±0.30 Fairchild Semiconductor
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Abstract: Transistors SIEMENS AKTIENGESELLSCHAF J68 BD434 BD 436 D _ - BD 438 BD440 BD442 Power transistors for com plem entary AF stages The transistors BO 434, BD 436, BD 438, BD 440 and BD 442 are PNP , paired BD 436 BD 436/BD 435 paired BD 438 BD 4380BD 437 paired BD 440 BD 440/BD 439 paired Bd 442 BD 442 , Junction to mounting area -V ceo -V ces -V cbo -V ebo BD 434 BD 436 BD 438 BD 440 BD 442 22 22 22 5 4 7 , V V S tatic characteristics (Toase = 25 °C) BD 434 BD 436 BD 438 BD 440 Collector-emitter -
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power transistor mrc 438 mrc 436 mrc 438 mrc 442 transistor mrc 439 mrc 437 0Q043 434/BD 436/BD 442/BD DIN137 Q62702-
Abstract: BD434/436/438 BD434/436/438 Medium Power Linear and Switching Applications · Complement to BD433, BD435 and BD437 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP , Current Gain : BD434/436 : BD438 : ALL DEVICE : BD434/436 : BD438 VCE(sat) VBE(on) fT , /436/438 Electrical Characteristics TC=25°C unless otherwise noted BD434/436/438 Typical , Rev. A, February 2000 BD434/436/438 Package Demensions 8.00 ±0.30 11.00 ø3.20 ±0.10 Fairchild Semiconductor
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Abstract: Transistors J68 D _ SIEMENS AKTIEN6ESELLSCHAF BD434 BD 436 -BD 438 BD440 BD442 Power transistors for complementary AF stages The transistors BO 434, BD 436, BD 438, BD 440 and BD 442 are PNP silicon epibase power , 436 BD 436/BD 435 paired BD 438 BD 4380BD 437 paired BD 440 BD 440/BD 439 paired Bd 442 BD 442/BD 441 , . Maximum ratings BD 434 BD 436 BD 438 BD 440 BD 442 Collector-emitter voltage -Vceo 22 32 45 60 80 V , 436 BD 438 BD 440 BD 442 Collector-emitter breakdown voltage (-/c= 100 mA) -V(BR)CE0 >22 >32 -
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Q62702-D202 bo434 b0436 BD 434 transistor BD 141 transistor AF 11 BD BD441 Q62702-D217 Q62702-D204 Q62702-D218 Q62702-D213
Abstract: 2SC 434 2SC 435 2SC 436 Absolute maximum rat ings Storage temperature Tstg °C -55~ + 150 , "C Vceâ'"5 V 2SC 432 L 434 \ 436 2SC\ 431 433 rv^435 10 15 20 Collector -
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2SB206 2SB208 2SB208A 2SB212 2SB214 2SC407 2SB205 GERMANIUM TRANSISTOR 2SC1466 1BMAX11 MAX50 MAX30 2SB207
Abstract: 90 V, Tch = 25°C (initial), L = 43.6 mH, IAR = 5 A, RG = 25 Note 3: Repetitive rating: pulse width , THERMAL IMPEDANCE rth (t)/Rth (ch-c) RG = 25 VDD = 90 V, L = 43.6 mH E AS = 1 B VDSS L I2 Toshiba
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2SK2610 K2610 transistor k2610 Toshiba K2610 k2610 toshiba SC-65 2-16C1B
Abstract: BD434/436/438 BD434/436/438 Medium Power Linear and Switching Applications · Complement to , : BD434/436 : BD438 : ALL DEVICE : BD434/436 : BD438 VCE(sat) VBE(on) fT , =300us, duty Cycle=1.5% Pulsed ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 BD434/436/438 Electrical Characteristics TC=25°C unless otherwise noted BD434/436/438 Typical , Derating Rev. A1, June 2001 BD434/436/438 Package Demensions 8.00 ±0.30 11.00 ø3 Fairchild Semiconductor
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Abstract: -178.0 5.380 76.3 0.069 43.3 0.284 -67.9 16.4 1200 0.535 171.5 4.564 69.2 0.077 43.6 0.256 -72.3 14.9 1400 0.551 162.8 3.934 62.9 0.084 43.6 0.236 -79.7 13.7 1600 0.551 156.2 3.452 57.1 0.092 44.1 0.238 -85.4 12.6 1800 0.552 149.7 3.143 50.8 0.101 43.6 0.245 -89.6 11.8 2000 0.558 142.9 2.848 45.4 0.110 -
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BFG65 TAG 9223 TAG 8653 4221 transistor transistor tag 306 702 P TRANSISTOR 0045D
Abstract: 17.4 1000 0.532 -178.0 5.380 76.3 0.069 43.3 0.284 -67.9 16.4 1200 0.535 171.5 4.564 69.2 0.077 43.6 0.256 -72.3 14.9 1400 0.551 162.8 3.934 62.9 0.084 43.6 0.236 -79.7 13.7 1600 0.551 156.2 3.452 57.1 0.092 44.1 0.238 -85.4 12.6 1800 0.552 149.7 3.143 50.8 0.101 43.6 0.245 -89.6 11.8 2000 0.558 142.9 -
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MSB037 transistor 3702 558 npn D 1414 transistor MBB332
Abstract: 1200 0.535 171.5 4.564 69.2 0.077 43.6 0.256 -72.3 14.9 1400 0.551 162.8 3.934 62.9 0.084 43.6 0.236 , 43.6 0.245 -89.6 11.8 2000 0.558 142.9 2.848 45.4 0.110 42.2 0.240 -92.6 11.0 2200 0.580 135.9 2.597 -
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transistor SOT103 D 799 transistor 2566 transistor 4809 SOT103 SBE 461
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