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Part Manufacturer Description Datasheet BUY
90148-1210 Molex Board Connector, 10 Contact(s), 1 Row(s), Female, Right Angle, 0.1 inch Pitch, Solder Terminal, Black Insulator, Receptacle visit Digikey
90148-1108 Molex Board Connector, 8 Contact(s), 1 Row(s), Female, Right Angle, 0.1 inch Pitch, Solder Terminal, Black Insulator, Receptacle visit Digikey
90148-1130 Molex Board Connector, 30 Contact(s), 1 Row(s), Female, Right Angle, 0.1 inch Pitch, Solder Terminal, Black Insulator, Receptacle visit Digikey
90142-0022 Molex Board Connector, 22 Contact(s), 2 Row(s), Female, 0.1 inch Pitch, Crimp Terminal, Locking Mech, Black Insulator, Plug visit Digikey
90143-0018 Molex Board Connector, 18 Contact(s), 2 Row(s), Female, Straight, 0.1 inch Pitch, Crimp Terminal, Locking, Black Insulator, Plug visit Digikey
90148-1102 Molex Board Connector, 2 Contact(s), 1 Row(s), Female, Right Angle, 0.1 inch Pitch, Solder Terminal, Black Insulator, Receptacle visit Digikey

TRANSISTOR c 9014

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: ST 9014 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As , ST 9014 VCE=5V 5 4 3 400 2 10 P tot 300 IC Tamb=100 o C 5 4 o 25 C , =25 C 5 4 2 5 o 7 5 10 2 ST 9014 v=0 2 10 -1 10 -6 3 tp v= T , current V 0.5 ST 9014 ST 9014 3 10 VCE=5V I C/I B =20 5 4 3 0.4 o 100 C Semtech Electronics
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BR 9014 transistor BR 9014 TRANSISTOR 9014 C 9014 transistor ST 9014 C BR 9014 C
Abstract: HN 9014 NPN Silicon Expitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C, and ] ^^ D, according to its DC current gain. As complementary type the PNP transistor HN 9015 is recommended. 3 c E On special request, these , .0o.55 TRANSISTOR PACKAGE OUTLINE" on page 80 for the 2.5 available pin options. â'"^ E ;0 0 0 C B TO-92 Plastic , collector current HN 9014 ;c//e=20 i/ vCEsat 0,3 SEMTECH ELECTRONICS LTD. ( wholly owned subsidiary -
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transistor 9014 C npn V. 9014 c 9014 C transistor 9014 NPN transistor 9014 c S 9014 npn
Abstract: ST 9014 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As , versus collector current V 0.5 ST 9014 ST 9014 3 10 VCE=5V I C/I B =20 5 4 3 , versus collector current dB 20 18 ST 9014 14 dB 20 VCE=5V f=1KHz Tamb=25o C 18 , 9014 I C=0.2mA R G =2K f=1KHz f=200Hz Tamb=25o C 14 12 10 1K 8 10 8 6 6 500 Semtech Electronics
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9014 st 9014 BR 9014 C TRANSISTOR 9014 Transistor data sheet transistor 9014 C 9014 H
Abstract: ST 9014 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As , VCE=10V 3 0.05 r thA Tamb=25 C 5 4 2 5 o 7 5 10 2 ST 9014 v , voltage versus collector current V 0.5 ST 9014 ST 9014 3 10 VCE=5V I C/I B =20 5 , Noise figure versus collector current dB 20 18 ST 9014 VCE=5V f=1KHz Tamb=25o C 14 dB Semtech Electronics
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st9014 c 9014 c 024 c 9014 data sheet transistor 9014 NPN B 9014 npn
Abstract: ST 9014 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As , ST 9014 VCE=5V 5 4 3 400 2 10 P tot 300 IC Tamb=100 oC 5 4 o 25 C , =25 C 5 4 2 5 o 7 5 10 2 ST 9014 v=0 2 10 -1 10 -6 3 tp v= T , current V 0.5 ST 9014 ST 9014 3 10 VCE=5V I C/I B =20 5 4 3 0.4 o 100 C Semtech Electronics
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V 9014 c
Abstract: S 9014 VCE=5V 5 4 3 400 2 10 P tot 300 IC Tamb=100 o C 5 4 o 25 C , versus collector current V 0.5 S 9014 S 9014 3 10 VCE=5V I C/I B =20 5 4 3 , versus collector current dB 20 18 S 9014 VCE=5V f=1KHz Tamb=25o C 14 dB 20 18 100K , TO-92 Plastic-Encapsulate Transistors S9014 TRANSISTOR (NPN) TO-92 FEATURES 1. EMITTER , ) Rank Range A B C D 60-150 100-300 200-600 400-1000 S9014 Admissible power Bytes
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transistors BR 9014
Abstract: C E B C Packing Tape Box Bulk 1 of 3 QW-R201-031.B 9014 NPN SILICON TRANSISTOR , UNISONIC TECHNOLOGIES CO., LTD 9014 NPN SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW , TECHNOLOGIES CO., LTD www.unisonic.com.tw C 200-600 D 400-1000 2 of 3 QW-R201-031.B 9014 NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS Static Characteristic 100 70 60 IB , Lead Free Plating 9014-x-T92-B 9014L-x-T92-B 9014-x-T92-K 9014L-x-T92-K Package Unisonic Technologies
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9014L 9014 transistor specification 9014 npn Free 9014 9015 transistor 9015 transistor specification sheet 9014L-
Abstract:  V7*. KM 9000 SERIES AM FM RADIO TRANSISTOR KIT SELECT ION GUIDE FOR AM FM RADIO TRANSISTOR KIT AM RECEIVER FM RECEIVER W FM RF KM 9016 Conv. IF) IF 2 KM90II KM 90H KM 9011 AF , IF AM/FM IF KM 9011/8 KM901I/8 KM90II/8 -î^-àm/I AF Amp. J KM 9014 Or KM90I5 AF A,np 2 , , AM CONVERTER to-92a à EBC KM 9012 PNP AUDIO POWER OUTPUT KM 9013 NPN AUDIO POWER OUTPUT KM 9014 , DEVICE SPECIFICATIONS [Ta - 25°C unless otherwise specified ] MAXIMUM RATINGS ELECTRICAL -
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CP1005 9011 9012 9013 9014 9018 9011 NPN transistor 9011 transistor 9016 9015 PNP KM90I4 KM9015 KM90I
Abstract: © 2014 Unisonic Technologies Co., Ltd 1 of 3 QW-R201-031.C 9014  NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT , UNISONIC TECHNOLOGIES CO., LTD 9014 NPN SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW , : Emitter B: Base C: Collector  TO-92 Pin Assignment 1 2 3 E B C E B C Packing , functional device operation is not implied.  ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise Unisonic Technologies
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9014G-
Abstract: r-t-1 fr AM FM RADIO TRANSISTOR KIT SELECTION GUIDE FOR AM / FM RADIO TRANSISTOR KIT Oulput , OUTPUT CL 9013 NPN AUDIO POWER OUTPUT i CL 9014 NPN AUDIO DRIVER CL 9015 PNP AUDIO DRIVER , [Ta = 25°C unless otherwise specified] TYPE MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS , (dB) tYP InA) max VCB (v) (v) typ max ic vCE (mA) (v) (v) typ max 'c 'B (mA) (mA) (MHz) min typ 'C VCE (mA) (v) CPF) typ max VCB (v) CL 9011 25 20 3 300 28 198 50 18 0 67 0 85 1 5 0118 05 10 1 -
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transistor c 9018 Transistor CL 100 transistor 9013 NPN audio output 9016 transistor audio output TRANSISTOR NPN 9013 npn 9016 transistor T0-92B
Abstract: s Lì >J à .-« j&lA CL9000 SERIES AM FM RADIO TRANSISTOR KIT SELECTION GUIDE FOR AM/FM RADIO TRANSISTOR KIT Oulput TYPE POLARITY APPLICATIONS CASE CL 9011 NPN AM/FM IF, AM CONVERTER T0-92B CL 9012 PNP AUDIO POWER OUTPUT CL 9013 NPN AUDIO POWER OUTPUT i CL 9014 NPN AUDIO DRIVER CL 9015 PNP AUDIO DRIVER CL 9016 NPN FM RF E Cl â'ž 0 o CL 9018 NPN AM/FM IF, FM CONVERTER C , SPECIFICATIONS [Ta = 25°C unless otherwise specified] TYPE MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS -
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F 9016 transistor 9018 transistor pnp transistor 9015 NPN 9013 transistor 9015 c 9013 NPN Transistor
Abstract: UTC 9014 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES , . UNIT V V V nA nA V V V pF MHz dB 1 QW-R201-031,A UTC 9014 NPN EPITAXIAL SILICON TRANSISTOR CLASSIFICATION OF hFE RANK RANGE UTC A 60-150 B 100-300 C 200-600 UNISONIC , -92 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise , ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Unisonic Technologies
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transistor npn c 9014
Abstract: Vi4». ¡;-i\> V IliÌ Vi- i m B bJ ;7*y V7l_l IlkaW AM. FM RADIO TRANSISTOR KIT SELECTION GUIDE FOR AM / FM RADIO TRANSISTOR KIT TYPE POLARITY APPLICATIONS CASE KM 9011 NPN AM/FM IF, AM CONVERTER TO-92A à E6C KM 9012 PNP AUDIO POWER OUTPUT KM 9013 NPN AUDIO POWER OUTPUT KM 9014 NPN AUDIO , - - 1 10 lC CmA) KM 9014 KM 9015 100 HFE 80 60 40 20 0 , \ > KM 9011 KM 3016 KM 9018 0.1 1 10 lc ( mA-) 100 DEVICE SPECIFICATIONS [TA - 25°C unless -
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9014 ch 100-10L 9018 9013 pnp 9012 pnp transistor Transistor 9012 G 22 C
Abstract: UTC 9014 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES , TRANSISTOR CLASSIFICATION OF hFE RANK RANGE A 60-150 B 100-300 C 200-600 D 400-1000 , -92 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise , 450 150 -55 ~ +150 V V V mA mW °C °C Collector-base voltage Collector-emitter voltage , ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Unisonic Technologies
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utc 9014 9014 current rating UTC9014 low noise transistor 9014 datasheet transistor 9014 UTC 9015
Abstract: UTC 9015 PNP EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES *High total power dissipation. (450mW) *Excellent hFE linearity. *Complementary to UTC 9014 1 TO-92 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise , Temperature ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL TEST , UNISONIC TECHNOLOGIES C 200-600 CO., LTD. 1 QW-R201-032,A UTC 9015 UTC PNP EPITAXIAL Unisonic Technologies
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Abstract: ST 9015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the NPN transistor ST 9014 is recommended. On special request, these transistors can be , O Storage Temperature Range TS -55 to +150 O C C G S P FORM A IS AVAILABLE , - B hFE 100 - 300 - C hFE 200 - 600 - D hFE 400 - Semtech Electronics
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BR 9015 transistors BR 9015 transistor c 9015 TS 9015 datasheet transistor 9015 C 9015 transistor
Abstract: -72 LEAD CODE TRANSISTOR FET 1 2 E S B D a c G TO-IB PHOTO TRANSISTOR T'S ,«S TO , 360 360 360 360 360 350 360 *C (mA) 100 50 50 100 100 100 100 200 200 200 200 100 300 100 200 200 200 , 800 500 300 180 110 500 500 500 800 - 400 * `c (mA) 10 1 1 10 10 10 10 2 2 2 2 50 5 10 2 2 2 2 2 2 , 0.3 0.3 0.3 0.3 0.3 0.2 0.05+ 0.5 0.5 _ 0.5 1 0.5 0.5 0.5 0.25 0.25 , - 0.3 0.3 _ _ _ _ _ _ _ _ 'c , 78 BSY 89 EN 930 KM 9011 KM 9014 KM 9015 LN 9014 LN 9015 MRS 2711 MPS 2712 MPS 2713 MPS 2714 MPS 2716 -
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Transistor BSX 24 TRANSISTOR MPS TRANSISTOR MPS 3391 transistor 9015 transistor MPS 2926 BF 9014 transistor MELF-001 MELF-002 MELF-005 TQ-220A MELF006 L0T17
Abstract: ST 9015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the NPN transistor ST 9014 is recommended. On special request, these transistors can be , O Storage Temperature Range TS -55 to +150 O C C SEMTECH ELECTRONICS LTD , 300 - C hFE 200 - 600 - D hFE 400 - 1000 - -V(BR)CBO 50 Semtech Electronics
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BR 9015 C 9015* Transistor ST 9015 C transistor 9015 NPN 9015 af 9015
Abstract: ST 9015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the NPN transistor ST 9014 is recommended. On special request, these transistors can be , O Storage Temperature Range TS -55 to +150 O C C SEMTECH ELECTRONICS LTD , 300 - C hFE 200 - 600 - D hFE 400 - 1000 - -V(BR)CBO 50 Semtech Electronics
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ts 9014 pin configuration NPN transistor 9014 hFE-200 to-92 npn
Abstract: NPN SILICON TRANSISTOR 9014 TO 92 FEATURES 1.EMITTER Power dissipation PCM : 0.4 W Tamb=25 Collector current A ICM : 0.1 Collector-base voltage V V(BR)CBO : 50 ELECTRICAL CHARACTERISTICS Parameter 2.BASE 1 2 3 3.COLLECTOR Tamb=25 unless otherwise specified Symbol Test conditions Collector-base breakdown voltage V(BR)CBO Ic= 100 Collector-emitter , 60 1000 150 MHz f =30MHz CLASSIFICATION OF HFE(1) Rank A B C D Range Wing Shing Computer Components
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9014 to-92
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