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Part Manufacturer Description Datasheet BUY
ISL55210IRTZ-T7A Intersil Corporation Wideband, Low-Power, Ultra-High Dynamic Range Differential Amplifier; TQFN16; Temp Range: -40° to 85°C visit Intersil Buy
ISL55211IRTZ-T7 Intersil Corporation Wideband, Low Noise, Low Distortion, Fixed Gain, Differential Amplifier; TQFN16; Temp Range: -40° to 85°C visit Intersil Buy
ISL55211IRTZ Intersil Corporation Wideband, Low Noise, Low Distortion, Fixed Gain, Differential Amplifier; TQFN16; Temp Range: -40° to 85°C visit Intersil Buy
ISL95521BIRZ Intersil Corporation Hybrid Power Boost (HPB) and Narrow VDC (NVDC) Combo Battery Charger with SMBus Interface; QFN32; Temp Range: See Datasheet visit Intersil
ISL95521HRZ-T Intersil Corporation Hybrid Power Boost and Narrow VDC Configurations Combination Battery Charger with SMBus Interface; QFN32; Temp Range: -40° to 85°C visit Intersil
ISL95521BHRZ-T Intersil Corporation Hybrid Power Boost (HPB) and Narrow VDC (NVDC) Combo Battery Charger with SMBus Interface; QFN32; Temp Range: See Datasheet visit Intersil

TRANSISTOR c 5521

Catalog Datasheet MFG & Type PDF Document Tags

TRANSISTOR c 5521

Abstract: c 5521 5521 . 8 channels Open collector PNP transistor ouput Ch. 5, 6, 7, 8 Ch. 5, 6, 7, 8 VBB , Dupline® Field- and Installationbus Receiver for Digital Signals Types G 3430 5511, G 3430 5521 · 8-channel receiver · Optoisolated NPN (sink) or PNP (source) transistor outputs · Load: 8 x 0.7 , Receiver No. of channels Output type Power supply transistor outputs for control of loads up to 60 VDC/0.7 A. G 3430 5521 024 Type Selection Supply Ordering no. 8 channels 0.7 A/60 VDC NPN
Carlo Gavazzi
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Dupline

Abstract: NPN or PNP transistor outputs for control of loads up to 60 VDC/0.7 A. G 3430 5521 024 Type , transistor 24 VAC 115 VAC 230 VAC G 3430 5511 024 G 3430 5511 115 G 3430 5511 230 G 3430 5521 , transistor output G 3430 5521 . 8 channels Open collector PNP transistor ouput Ch. 5, 6, 7, 8 VBB , Du line Receiver for Digital Signals Types G 3430 5511, G 3430 5521 ® Fieldbus Installationbus â'¢ 8-channel receiver â'¢ Optoisolated NPN (sink) or PNP (source) transistor outputs â
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Abstract: transistor (TFT) liquid-crystal displays (LCDs). ORDER NUMBER G5521AR51U 5521 -40°C to 85°C , VGH charge pump controller for activematrix thin-film transistor (TFT) liquid-crystal displays (LCDs). ORDER NUMBER G5521R51U 5521 -40°C to 85°C TQFN4X4-24 FB COMP OPAI OPAO Global Mixed-Mode Technology
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G5521 G5521A

G5521

Abstract: G5521R51U activematrix thin-film transistor (TFT) liquid-crystal displays (LCDs). The boost converter provides the , (600KHz or 1.2MHz) currentPGND FREQ Ordering Information ORDER NUMBER G5521R51U MARKING 5521 TEMP. RANGE -40°C to 85°C PACKAGE (Pb free) TQFN4X4-24 Note: R5: TQFN4X4-24 1: Bonding Code U
Global Mixed-Mode Technology
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G-552 600KH

TRANSISTOR c 5521

Abstract: ic cmos 5011 /E Transistor output stage (for 4.5V VDD) · Chip form 6 27th June '96 HT3108A/C/D/E · Package form 7 27th June '96 HT3108A/C/D/E Transistor output stage · Chip form 8 27th , HT3108A/C/D/E 8 Key Voice Piano Features · · · · · · · Operating voltage: 2.4V~5.0V , General Description The HT3108A/C/D/E are voice keyboard instrument LSIs implemented in the CMOS , song of the HT3108A/C/D/E is triggered by pressing the demo key and will keep playing until one of
Holtek
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LM386 TRANSISTOR c 5521 ic cmos 5011 duck sound lm386 transistor sounds melody paper HT3108A/C/D/E HT3108A HT3108C HT3108D HT3108E

dw94c

Abstract: NPN power transistor in monolithic Darlington configuration mounted in Jedec T0-220 plastic package , a ra m e te r V a lu e NPN PNP V CBO C o lle c to r-B a s e V o lta g e V CEO C o lle c to r-E m itte r V o lta g e (I b = 0) (Ie = 0) B D W 9 4B BD W 94C 80 100 V 80 100 V 12 A C o lle c to r P e a k C u rre n t 15 A B a se C u rre n t , p e ra tu re lc ICM Ib Tj C o lle c to r C u rre n t Unit BD W 93C M ax. O p e ra
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dw94c BDW93C BDW94B/BDW94C BDW94C BDW94B BDW93C/B DW94B/B
Abstract: /Dec.â'™02 ELETROSTATIC SENSITIVE DEVICES RD02MUS1 Silicon MOSFET Power Transistor 175MHz,520MHz,7.2V,2W OUTLINE DESCRIPTION RD02MUS1 is a MOS FET type transistor specifically designed for , r a d i o s e ts ABSjjLUTE MAXIMUM RATINGS (Tc=4llfg.C UNLESS OTHE SYMBOL VDSS VGSS Pin Pch , Channel dissipation Tc=25deg.C Junction Temperature Storage temperature RATINGS 30 +/-20 100 5 , ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER (Tc=25deg.C , UNLESS OTHERWISE NOTED) CONDITIONS MIN -
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175MH 520MH

c380 NPN transistor

Abstract: c380 transistor Issued Date : 2003.08.15 Revised Date : Page No. : 5/8 LC C Lb Transistor S Chip B C1 E L2 , . : 1/8 High Cutoff Frequency NPN Epitaxial Planar Transistor BTC5096WC3 Description The BTC5096WC3 is a NPN Silicon Transistor designed for low noise amplifier at VHF, UHF and CATV band. Symbol , · Maximum Ratings (Ta=25°C) Parameters Collector-Emitter Breakdown Voltage Collector-Base , 125 -50~125 *1 Unit V V V mA mW °C °C Note: *1 Here we define the point DC current
CYStech Electronics
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c380 NPN transistor c380 transistor transistor c380 DATASHEET OF BJT 547 hfe 4538 Transistor 0235 BF C212WC3 UL94V-0

c380 NPN transistor

Abstract: c380 transistor =0.5 (nH) L3=0.6 (nH) Package Equivalent Circuit Transistor Chip Equivalent Circuit C3 C' B , Page No. : 1/8 High Cutoff Frequency NPN Epitaxial Planar Transistor BTC5094N3 Description The BTC5094N3 is a NPN Silicon Transistor designed for low noise amplifier at VHF, UHF and CATV band. Symbol , : 2002.05.08 Revised Date :2006.03.14 Page No. : 2/8 Absolute Maximun Ratings · Maximum Ratings (Ta=25°C , V V mA mW °C °C Note: *1 Here we define the point DC current gain drops off. Electrical
CYStech Electronics
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c 4977 transistor NPN C380 diode product 14408 70E-09 transistor m 4995 4447 surface mounted diode C212N3

c380 NPN transistor

Abstract: c380 transistor RSX Base LC C Lb Transistor S Chip B C1 E L2 Collector C2 Le L3 Emitter , . : 1/7 MICROELECTRONICS CORP. HSC5094 NPN SILICON BIPOLAR TRANSISTOR Description The HSC5094 is a NPN Silicon Transistor designed for low noise amplifier at VHF, UHF and CATV band. SOT , buffer amplifiers Electrical Characteristics · Maximum Ratings (Ta=25°C) Parameters Symbol , V V V mA mW °C °C * Note: Here we define the point where the DC current gain drops off
Hi-Sincerity Microelectronics
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TR10E TT 2076 transistor c380 npn transistor T C380 diode gp 934 20E-18 HN200103

c380 NPN transistor

Abstract: c380 transistor ) Lc=0 (nH) Transistor Chip Equivalent Circuit C3 B RBX Rsp C L1 G-P S' CSP , /8 LC C Lb Transistor S Chip B C1 E L2 Collector C2 Le RSS RSX L3 Emitter , Page No. : 1/8 High Cutoff Frequency NPN Epitaxial Planar Transistor BTC5094N3 Description The BTC5094N3 is a NPN Silicon Transistor designed for low noise amplifier at VHF, UHF and CATV band , · Maximum Ratings (Ta=25°C) Parameters Collector-Emitter Breakdown Voltage Collector-Base
CYStech Electronics
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ff 0401 transistor transistor marking code ne SOT-23 IN tt 2076 REX SOT sot-23 MARKING CODE 431 equivalent transistor D 908

c380 NPN transistor

Abstract: TT 2076 Issued Date : 2003.08.15 Revised Date : Page No. : 5/8 LC C Lb Transistor S Chip B C1 E L2 , . : 1/8 High Cutoff Frequency NPN Epitaxial Planar Transistor BTC5095S3 Description The BTC5095S3 is a NPN Silicon Transistor designed for low noise amplifier at VHF, UHF and CATV band. Symbol , · Maximum Ratings (Ta=25°C) Parameters Collector-Emitter Breakdown Voltage Collector-Base , 125 -50~125 *1 Unit V V V mA mW °C °C Note: *1 Here we define the point DC current
CYStech Electronics
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C212S3 TT 2076 4014 bp RE101 1011 sot323 marking 1011 sot323 marking code c3 sot 23

c380 NPN transistor

Abstract: c380 npn 0.1nH LC C Lb Transistor S Chip B C1 E L2 Collector C2 Le RSS RSX L3 Emitter , . : 1/7 MICROELECTRONICS CORP. HSC5094 NPN SILICON BIPOLAR TRANSISTOR Description The HSC5094 is a NPN Silicon Transistor designed for low noise amplifier at VHF, UHF and CATV band. SOT , Oscillator buffer amplifiers Electrical Characteristics · Maximum Ratings (Ta=25°C) Parameters , Unit V V V mA mW °C °C * Note: Here we define the point where the DC current gain drops off
Hi-Sincerity Microelectronics
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FC 0137 rbm 5018 4.7-16

TRIAC mw 134 600E

Abstract: OM1654 BLOCK DIAGRAM Neutral GATE 2 Triac BT134-600E Vcc 3 Rb NTC 100k @25°C zero , R=100k 1.6 0°C 25°C 100°C The RC oscillator can be disabled by connecting the RC pin to , 100 1000 Capacitance, C3 (nF) 5521-RCfac Product Specification IES5521A Simple , -1.38 × R × C ( Hz ) The tolerance of the RC components determines the accuracy of the time-out , +125 °C Tamb operating ambient temperature -25 +100 °C 2006 Sep 01, Revision 1.1
Hendon Semiconductors
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TRIAC mw 134 600E OM1654 BT137 application example mw 134 600e diagram circuit toaster BT137 application note OM1654A
Abstract: Ordering number : ENA1114A 55GN01MA RF Transistor 10V, 70mA, fT=5.5GHz, NPN Single MCP , =1GHz) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter , Ratings 20 10 3 70 400 150 -55 to +150 Unit V V V mA mW °C °C Stresses exceeding Maximum Ratings may , Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain , - °C IT06251 No. A1114-3/8 55GN01MA S Parameters (Common emitter) VCE=5V, IC=5mA, ZO ON Semiconductor
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SC-70 55GN01MA-TL-E TKIM/O2908AB TC-00001677 A1114-1/8 A1114-8/8

circuit diagram heating triac

Abstract: -600E Vcc 3 Rb NTC 100k @25°C zero crossing 8 AC θ 330k Rc 0.25W 7 PWR latch , parallel resistor and capacitor network between the RC pin and VEE (figure 6). RC Factor 0°C Error Bars R=100kâ"¦ 1.6 25°C 100°C The RC oscillator can be disabled by connecting the , 0.1 1.0 10 100 1000 Capacitance, C3 (nF) 5521-RCfac Product Specification , ‰ -1.38 × R × C ( Hz ) The tolerance of the RC components determines the accuracy of the
Hendon Semiconductors
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circuit diagram heating triac

ic 4518 applications

Abstract: transistor 7089 5Ordering number : ENN7541 55GN01M NPN Epitaxial Planar Silicon Transistor 55GN01M UHF , : Base 2 : Emitter 3 : Collector Specifications SANYO : MCP Absolute Maximum Ratings at Ta=25°C , Collector Dissipation IC PC 400 mW Junction Temperature Tj 150 °C Storage Temperature Tstg -55 to +150 °C Collector Current Mounted on a ceramic board (250mm20.8mm) Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Collector Cutoff Current ICBO
SANYO Electric
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ic 4518 applications transistor 7089 TRANSISTOR 6019 ic 8705 am 2059B

TRANSISTOR C 5387

Abstract: = 15 Vdc Thermal Resistance 0 jc . 108.9°C/W Transistor Power , ) ; Specifications* Characteristic Typical Guaranteed 0° to +50°C -54° to +85°C 1000-4000 MHz 13.0 dB +0.8 dB 9.0 dB , inia ture S M A co n n e cto r housing and g uaranteed over 0°C to 50cC tem perature range. Typical Intermodulation Performance at 25°C Second Harmonic Intercept Point , . -65°C to +125°C Maximum Case Temperature
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TRANSISTOR C 5387 WJ-LA45-1 SMLA45-1 LA45-1 0D0731D

HA 12045

Abstract: IC 7487 PRELIMINARY DATA SHEET NEC FEATURES NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA826TF , package. ELECTRICAL CHARACTERISTICS (t a = 25°c ) PART NUMBER PACKAGE OUTLINE SYMBOLS ICBO lEBO hFE , mA Gain Bandwidth at V c e = 3 V , Ic = 10 mA, f = 2 GHz Feedback Capacitance2 at V cb = 3 V , I e = 0, f = 1 MHz Insertion Power Gain at V c e = 3 V , Ic = 10 mA, f = 2 GHz Noise Figure at V c e = 3 V , Ic = 3 mA, t = 2 GHz hFE Ratio, V c e = 3 V , lo = 10 mA MIN TYP MAX 0.1 0.1 HA 75 GHz
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HA 12045 IC 7487 pin configuration ic 7421 TRANSISTOR 023 3010 k 3531 transistor pt 6964 NE685 IS21EI2 UPA826TF-T1

ic 4518 applications

Abstract: 55GN01M 5Ordering number : ENN7541 55GN01M NPN Epitaxial Planar Silicon Transistor 55GN01M UHF , : Base 2 : Emitter 3 : Collector Specifications SANYO : MCP Absolute Maximum Ratings at Ta=25°C , 400 Mounted on a ceramic board (250mm2!0.8mm) mW 150 °C -55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Symbol ICBO IEBO Emitter , 8m m ) 50 0 0 20 40 60 80 100 120 Ambient Temperature, Ta - °C
SANYO Electric
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IC 5276 8723 transistor transistor mcp 6723 Sanyo 6324 ta 8227 CIRCUIT
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