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ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
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ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
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HFA3096B Intersil Corporation 5 CHANNEL, UHF BAND, Si, NPN AND PNP, RF SMALL SIGNAL TRANSISTOR, MS-012-AC, MS-012AC, 16 PIN visit Intersil
LMP8645HVMK/NOPB Texas Instruments 76-V, Configurable Gain, Low- or High-Side, High-Speed, Voltage Output Current Sensing Amplifier 6-SOT-23-THIN -40 to 125 visit Texas Instruments

TRANSISTOR bc107 current gain

Catalog Datasheet MFG & Type PDF Document Tags

TRANSISTOR bc107 current gain

Abstract: bc107a peak collector current total power dissipation DC current gain BC107 BC108 BC109 Tamb -25 °C lc = 2 mA , C B O Iebo Hfe BC107; BC108; BC109 PARAMETER collector cut-off current emitter cut-off current DC current gain BC107A; BC108A BC107B; BC108B; BC109B BC108C; BC109C DC current gain BC107A , current (max. 100 mA) · Low voltage (max. 45 V). APPLICATIONS · General purpose switching and amplification. DESCRIPTION NPN transistor in a TO-18; SOT18 metal package. PNP complement: BC177. PINNING PIN 1
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TRANSISTOR bc107 current gain BC109c transistor transistor TO-92 bc108 TRANSISTOR bc108 transistor bc107b transistor BC109

TRANSISTOR BC 137

Abstract: TRANSISTOR bc107 current gain 1) The transistor is overloaded to such an extent that the DC current gain decreases to ftFE ~ 20 2 , order does not include any exact indication of the current amplification group desired, a transistor of , characteristics (7"amb = 25 °C). The transistors are grouped accordingto the DC current gain /)FE and marked by A , Collector current Iq = f (Vee) Vce = 5 V (common emitter configuration) BC107. BC108, BC109 Input , cutoff current versus temperature Iqbo = '(Tamb) for maximum permissible breakdown voltage nA BC107
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TRANSISTOR BC 137 BC107 characteristic transistor bc 138 bc 104 npn transistor XL08 Transistor BC107 BC1071 Q62702-C680 Q60203-X107-A Q60203-X107-B Q60203-X108 Q60203-X108-A

TRANSISTOR C107

Abstract: BC10 npn transistor GENERAL PURPOSE NPN SMALL SIGNAL TRANSISTOR BC107/A/B/C BC108/A/B/C BC109/A/B/C â , SIGNAL TRANSISTOR BC107 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Symbols , 110-220 B Group 200-450 C Group DC Current Gain - >40 C Group IC = 2mA V nA , Number 9695 Issue 1 Page 2 of 4 GENERAL PURPOSE NPN SMALL SIGNAL TRANSISTOR BC107 DYNAMIC , Small-Signal Current Gain 500 B C108 hfe 125 450 900 IC = 10mA VCE = 5V 150 f =
Semelab
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TRANSISTOR C107 BC10 npn transistor BC107/A/B/C 100MH BC107/108

Transistor BC107

Abstract: TRANSISTOR C107 GENERAL PURPOSE NPN SMALL SIGNAL TRANSISTOR BC107/A/B/C BC108/A/B/C BC109/A/B/C · · · Hermetic TO , SIGNAL TRANSISTOR BC107 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Symbols VCEO , nA , ://www.semelab-tt.com Document Number 9695 Issue 1 Page 2 of 4 GENERAL PURPOSE NPN SMALL SIGNAL TRANSISTOR BC107 DYNAMIC CHARACTERISTICS IC = 2mA f = 1KHz B C107 B C108 hfe Small-Signal Current Gain B C109 A Group B
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transistor c109 c107 transistor applications of Transistor BC108 Transistor BC107 NPN for transistor bc107 c109 TRANSISTOR

TRANSISTOR bc108

Abstract: BC107 Transistor application notes BC107; BC108; BC109 FEATURES PINNING · Low current (max. 100 mA) PIN · Low voltage (max , current Ptot total power dissipation Tamb 25 °C hFE DC current gain IC = 2 mA; VCE = 5 , current IC = 0; VEB = 5 V hFE DC current gain IC = 10 µA; VCE = 5 V BC108C; BC109C hFE DC current gain IC = 2 mA; VCE = 5 V BC108C; BC109C 420 520 800 collector-emitter , DISCRETE SEMICONDUCTORS DATA SHEET M3D125 BC107; BC108; BC109 NPN general purpose
Philips Semiconductors
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BC107 Transistor application notes transistor BC107 specifications bc108b equivalent DATASHEET Transistor BC109 BC108 transistor BC108B application note BC178 BC179 MAM264 SCA54

transistor BC107 specifications

Abstract: BC107 Transistor application notes BC107; BC108; BC109 FEATURES PINNING · Low current (max. 100 mA) PIN · Low voltage (max , power dissipation Tamb 25 °C hFE DC current gain IC = 2 mA; VCE = 5 V fT transition , cut-off current hFE DC current gain IC = 10 µA; VCE = 5 V hFE DC current gain IC = 2 mA , DISCRETE SEMICONDUCTORS DATA SHEET M3D125 BC107; BC108; BC109 NPN general purpose , 2 NPN transistor in a TO-18; SOT18 metal package. PNP complement: BC177. 2 3 MAM264
Philips Semiconductors
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TRANSISTOR DATASHEET BC107B BC107 equivalent transistors symbol transistor BC108 DATASHEET Transistor BC107 BC108 operation BC107 DATASHEET SCA55

Transistor BC107

Abstract: bc107 GENERAL PURPOSE NPN SMALL SIGNAL TRANSISTOR BC107 · · · Hermetic TO-18 Metal package. Designed For , NPN SMALL SIGNAL TRANSISTOR BC107 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated , fT Transition Frequency IC = 10mA f = 100MHz Small-Signal Current Gain IC = 2mA f = 1.0KHz Output , PURPOSE NPN SMALL SIGNAL TRANSISTOR BC107 MECHANICAL DATA Dimensions in mm (inches) 5.84 (0.230) 5.31 , Emitter ­ Base Voltage Continuous Collector Current Peak Collector Current TA = 25°C Total Power
Semelab
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BC107 pin

TRANSISTOR bc177b

Abstract: bc177a Philips Semiconductors Product specification PNP general purpose transistor FEATURES · Low current {max. 100 mA) · Low voltage (max. 45 V). APPLICATIONS · General purpose switching and amplification. DESCRIPTION PNP transistor in a TO-18; SOT18 metal package. NPN complement: BC107. PINNING PIN 1 , collector-base voltage collector-emitter voltage peak collector current total power dissipation DC current gain , gain DC current gain BC177A BC177B VcEsat VsEsat < C O m BC177 CONDITIONS |E = 0; VCB = -20 V |E
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TRANSISTOR bc177b BC177 pnp transistor SOT-18 Transistor BC177 BC177 NPN transistor sot18

C495 transistor

Abstract: c638 transistor T018 PNP BC107 BC177 BC108 BC178 BC109 BC179 High Current Amplifiers NPN T05 PNP BFT39 BFT79 , current stock/ availability situation. To specify tin leads add suffix TP to the type number, i.e. BCW , . Matching Transistor Pairs are available with 5% and 10% matching on hfe (or hFE). These may be ordered by , Ic mA mV BC107 BC108 BC109 NPN NPN NPN T018 T018 T018 50 45 6 35 25 6 35 25 6 300 300 300 2 110 450 , 150 150 150 10 10 10 300 300 300 1 AVAILABLE IN A, B and C hFE RANGES [Complementary to BC107, BC108
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C495 transistor c638 transistor EQUIVALENT TRANSISTOR bc108 C756 TRANSISTOR PNP Transistor 2N2222 equivalent C735 transistor BCW35GP BS9300 2N2221 2N2906- 2N2221A- 2N2906A-

C495 transistor

Abstract: C735 transistor current stock/ availability situation. To specify tin leads add suffix TP to the type number, i.e. BCW , . Matching Transistor Pairs are available with 5% and 10% matching on hfe (or hFE). These may be ordered by , Ic mA mV BC107 BC108 BC109 NPN NPN NPN T018 T018 T018 50 45 6 35 25 6 35 25 6 300 300 300 2 110 450 , 150 150 150 10 10 10 300 300 300 1 AVAILABLE IN A, B and C hFE RANGES [Complementary to BC107, BC108 ,
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C644 transistor transistor c495 transistor c735 c637 transistor transistor c633 transistor C372 2N2222A 2N2907A 2N2222 2N2907 2N2218 8S9300

BC350

Abstract: BSX19 equivalent High Gain Transistor 1400 70 4.5 70 - - - - R.F. Amplifier 750 50 4 , BC109 BC179 BC178 BCY58 BCY78 BC478 BC479 2N930 BC107 BCY79 BCY59 BC177 2N3964 BFR17 , 175 TO-39 403 - 10 400 TO-39 369 - 200 SELECTION GUIDE CATV High Gain Transistor 500 Package Page 500 2N3137 500 f 800 2N5109 30 » (MHz) 1000 2N4427 PG (dB) (dB) 1000 20 c *> PNP GAIN NOISE FIGURE CROSS REFERENCE IN
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BC350 BSX19 equivalent BC108 CROSS REFERENCE BFY40 SHORT DATA ON 2N744 BFW63 BC142 BC160 BC286 BC287 BC297 BC298

TRANSISTOR BC147

Abstract: BC148 transistor forward current gain. * Collector connected to case. * Shield connected to case. * * * Base connected , 53 IkeïuX Electronic Valves Z& I Aero Services Ltd London England 1972-73 Transistors Continued Notes (t> Minimum value Average value Max. unitateralized power gain (4) Max. frequency , '" 1mA Switching 0.25* ASZ21 G/PNP T018 120mW 300mcn 1 -20 75 , T018 300mW 300mc
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BC118 BC147 BC148 BCZ11 TRANSISTOR BC147 BC148 transistor TRANSISTOR BC149 npn transistor bc148 BC158 transistor transistor BC118 ASZ20 BC113 BC117 BC134 BC135

Transistor BC177

Abstract: SOT-18 power dissipation Tamb 25 °C - 300 hFE DC current gain IC = -2 mA; VCE = -5 V 125 , cut-off current IC = 0; VEB = -5 V - - 50 nA hFE DC current gain IC = -2 mA; VCE = -5 V 125 140 500 hFE DC current gain IC = -2 mA; VCE = -5 V BC177A 125 180 , DISCRETE SEMICONDUCTORS DATA SHEET * M3D125 BC177 PNP general purpose transistor , Jun 04 Philips Semiconductors Product specification PNP general purpose transistor BC177
Philips Semiconductors
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BC177 transistor MAM263

TRANSISTOR BC 137

Abstract: BC107 characteristic ) The transistor is overloaded to such an extent that the D C current gain decreases to /IFE - 2 0 2 , Include an/ exact indication o f the current amplification group desired, a transistor o f a current , current gain /)FE and marked by A, B, C. At I/je = 5 V and the collector currents indicated below the , C current gain hFE = f (/c); VfcE = B V; Tamb = parameter (common emitter configuration) BC 107, B , Collector-emitter voltage Emitter-base voltage Collector current Collector peak current Base current Junction
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BC 108 transistor TRANSISTOR BC 109 transistor bc 102 NT 101 BC 107 transistor b 108 b Q60203-X108-B Q60203-X108-C 60203-X109 Q60203-X109-B Q60203-X109-C

E 13003 TRANSISTOR

Abstract: c s 13003 TRANSISTOR current Collector peak current Base current Total power disspation T ' case S 2 5 ° C Junction temperature , Characteristics rca9#= 25 °C, unless otherwise specified Collector cut-off current Vce = 60 0 V · VCE = 700 V TC . , Base-emitter saturation voltage /c = 1 A,/B = 0 ,2 5 A DC forward current transfer ratio Kce " 2 V, /c = 0.5 A Vce = 2 V ,/c =1 A Gain bandwidth product VCE= 1 0 V ,/c = 1 0 0 A ,f= 1 MHz Switching characteristics , -33-11 5 .6W II aew! IT Ko.p.n asw BC107 B ^ Q r ^ - C 110 asw 3 Pulses (rO'ÍBRlCEO i p
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E 13003 TRANSISTOR c s 13003 TRANSISTOR W 13003 TRANSISTOR 13002 TRANSISTOR transistor 13002 LM 13003 T-33-II 0IN41 I3-75 T-33-11 15A3DIN

SMD Codes

Abstract: TRANSISTOR SMD T1P signal current gain input drain current gate current reverse leakage current (diodes) junction field effect transistor maximum available gain maximum min mmic modamp mosfet n-ch npn o/p p-ch pin pkg pnp , given. Normally, where a voltage, current or power is specified, these will be limiting values. For example, a device specified as NPN 20V 0.1A 1W is a NPN transistor with a Vce (max) of 20V, maximum collector current of 100mA and a maximum total power dissipation of 1W. Some of the transistors are types
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SMD Codes TRANSISTOR SMD T1P BAW92 MMBD2104 schottky diode s6 81A smd transistor A6a BC846A FMMT3904 BZV49 BZV55 BAS32 BAS45

MMBD2103

Abstract: ZENER DIODE t2d current gain input drain current gate current reverse leakage current (diodes) jfet MAG max min mmic , transistor maximum available gain maximum minimum microwave minature integrated circuit modular amplifier - , given. Normally, where a voltage, current or power is specified, these will be limiting values. For example, a device specified as NPN 20V 0.1A 1W is a NPN transistor with a Vce (max) of 20V, maximum collector current of 100mA and a maximum total power dissipation of 1W. Some of the transistors are types
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MMBD2103 ZENER DIODE t2d MMBD2101 MMBD2102 bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAV105 LL4148 LL4448 BB241 BB249 LL914

smd npn 2n2222

Abstract: tunnel diode 25 BC375 n-p-n TO-92 var. 20 1000 800 25 BC376 May 1989 envelope BC107 , mentioned in this handbook. type number â² envelope BC107 BC108 BC109 BC140 BC141 n n n n , BC107 BC107A BC107B BC108 BC108A BC108B BC109 BC109B BC109C BC146/01 BC146/02 BC146/03 BC156 , ; variable capacitance TRANSISTOR; low power, audio frequency (Rt h j-mb > 15 K/W) TRANSISTOR; power, audio frequency (Rth j-mb ^ 15 K/W) DIODE; tunnel TRANSISTOR; low power, high frequency (Rth j-mb > 15 K/W) M
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smd npn 2n2222 tunnel diode BSR62 equivalent BF494 h parameters BC369 transistor bc547 PH in metal detector 2PC1815L 2PC1815 7Z88986

TRANSISTOR bc107 current gain

Abstract: AD7801BRU Portable Battery Powered Instruments Digital Gain and Offset Adjustment Programmable Voltage and Current , feedback loop of the amplifier include the BC107 and the 2N3904, which enable the current source to , @ +25°C Full-Scale Error Zero-Code Error Drift Gain Error3 8 ±1 ±1 3 ­0.75 100 ±1 , Impedance Short Circuit Current Power Supply Rejection Ratio4 0 to VDD 2 7.5 1 0.2 40 14 0.0003 , Current VINL, Input Low Voltage VINL, Input Low Voltage VINH, Input High Voltage VINH, Input High
Analog Devices
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AD7801 RU-20 C2995 AD7801BRU equivalent component of transistor BC107 transistor BC107 pin diagram equivalent transistor bc107

kt420

Abstract: bc109 Transistor Equivalent list than tight current gain selections-orallow higher impedance level operation to reduce the value of , ASY28,9 ASY50 ASY54N.59N ASY63N ASY76 ASY77 ASY80 BC107,A,B BC108,A,B,C BC109,B,C BC146 , modern semiconductor technology. All Newmarket Transistor circuits use chip transistors, diodes , transistor packages. It also restricts design freedom to those types available in SOT-23, 'matchstick', and , current requirements and using either thermo compression or ultrasonic bonding techniques. Thus the use
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kt420 bc109 Transistor Equivalent list BCY70 BSY95A diffused alloy CV7002
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