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TRANSISTOR SUBSTITUTION DATA BOOK 1993

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Abstract: Bipolar Transistor Model, 1993, (implementation guide available on request from Philips Research , dominant influence on the distortion behavior of the bipolar transistor [9]. In conventional transistor , are the same. II. The Modeling of Quasi-Saturation in Transistor Models In conventional transistor , simulation results obtained using the Gummel-Poon and Mextram models for the same transistor. We have chosen the BFR520 BFR520 transistor commonly employed in discrete RF circuits. Computed Ic(Vce) characteristics are ... OCR Scan
datasheet

8 pages,
822.46 Kb

-754J BFR520 BFR520 transistor CT-20 ED-11 equivalent transistor 1970 HP RF TRANSISTOR GUIDE TRANSISTOR SUBSTITUTION hp8566A c1e2 VOLTERRA VT volterra TRANSISTOR SUBSTITUTION 1993 datasheet abstract
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Abstract: touch upon the early development of current regulating devices; first the bipolar transistor circuits, then the original diode, and the potted circuits. Finally, field effect transistor circuits and the , capability. In the early I950's, with the development of the transistor, current sources were reduced in , , regulators, and limiters. One of the more important parameters of the junction field-effect transistor, lDSS , produceda constant current, two-terminal device, simply a junction field-effect transistor with an internal ... OCR Scan
datasheet

12 pages,
643.46 Kb

1N4569A TRANSISTOR SUBSTITUTION 1N5283 n5313 motorola transistor handbook 1N5314 I960 1N5290 2N5361 jfet discrete differential transistor Kepco CRD Diode AN462 motorola dioda zener type BE 84 AN-462 AN-462 abstract
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Abstract: transistor. The power meter used was also a constant. Table 1 shows insertion loss, insertion loss , the square of VCESAT. V CESAT is a very strong function of collector current and transistor die , MOTOROLA SEMICONDUCTOR APPLICATION INFORMATIONOn This Product, © Motorola, Inc. 1993 For More Information , Substitution Study The vehicle used for this test was a production test fixture and correlation sample #2 for the TRW MRA1417-6 MRA1417-6 broadband, high­gain transistor. Measurements were taken at 1400 MHz with input ... Original
datasheet

4 pages,
207.66 Kb

trw RF POWER TRANSISTOR TRW Microwave Detector MIL-C-17 AN1032 726 MOTOROLA TRANSISTORS TRANSISTOR SUBSTITUTION DATA BOOK 1993 MRA1417-6 motorola 5118 TRANSISTOR SUBSTITUTION 1993 AN1032/D AN1032/D abstract
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Abstract: , Inc. 1993 connected to a given test circuit containing a common base microwave power transistor , transistor die temperature. The theoretical approach will evaluate the changes in amplifier output power , 1 AN1032 AN1032 Table 1. Microwave Load Substitution Study The vehicle used for this test was a production test fixture and correlation sample #2 for the TRW MRA1417-6 MRA1417-6 broadband, high­gain transistor , Load Input Return Loss + .03 dB thru calibration ­ 40.2 30.03 dB + .03 dB 7.75 ... Original
datasheet

4 pages,
34.36 Kb

trw rf transistor MRA1417-6 MIL-C-17 AN1032 AN-1032 trw RF POWER TRANSISTOR TRANSISTOR SUBSTITUTION 1993 AN1032/D AN1032/D abstract
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Abstract: function. The base drive signals that set the midpoint of the external switching differential transistor , ) and NPN (INO) buffer transistor pair. Analog in. A 1.0 nF capacitor to VEE is necessary for , receive comparators, comparator A and comparator B. The VINP pin connects to both of the noninverting (+ , This effectively turns on either the transistor to the diode bridge or the transistor to ground , ) * I S K PQ 4 = (VEE + 1.5) - VCM m a x ) * ISC PQ5 = (VEE + 1.5) - VLM AX) *ISK P q 6 = (VEE + 1.5 ... OCR Scan
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20 pages,
710.31 Kb

datasheet abstract
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Abstract: MIL-S-19500/539A MIL-S-19500/539A 20 October 1993 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, DARLINGTON TRANSISTOR , area 3053 Load condition B; (clamped inductive (switching) load); TA = 25°C; tr + tf 1.0 µs , Turn on (ton) time test circuit. NOTE: tS + tf = toff FIGURE 3. Switching time test circuit. , PRF-19500 PRF-19500. 6.3 Substitution of JAN devices. JANTX quality level devices are a oneway direct substitute for , TRANSISTOR, NPN, SILICON, POWER TYPES 2N6300 2N6300, 2N6301 2N6301 JANTX AND JANTXV 4. NATURE OF CHANGE (Identify ... Original
datasheet

15 pages,
79.62 Kb

MIL-PRF19500 JANTX2N6300 CC 3053 2N6301 2N6300 2N6301 JANTX TRANSISTOR SUBSTITUTION 1993 MIL-PRF-19500/539B MIL-S-19500/539A MIL-PRF-19500 MIL-PRF-19500/539B abstract
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Abstract: .0°C to +70°C LV Input Voltage.(OUT - 0.3V) to V+ + 0.3V MAX660E MAX660E_ _ , .-55°C to +125°C (OUT - 0.3V) or (V+ - 6V) to (V+ + 0.3V) Storage Temperature , /°C above + 70°C) .727mW SO (derate 5.88mW/°C above +70°C) .471mW , since LV may be left open, the substitution of the MAX660 MAX660 for the ICL7660 ICL7660 is simplified. LV must be , during one-half of the charge-pump cycle. This introduces a peak-to-peak ripple of: VRIPPLE = IOUT + ... Original
datasheet

8 pages,
98.46 Kb

United Chemi-Con 673D 673D UNITED CHEMI CON ICL7660 icl7660 maxim laptop inverter voltage MAX660CPA MAX660CSA MAX660EPA MAX660ESA Sanyo OS-CON capacitors MAX660MJA "nichicon pf" MAX660-6 MAX660 MAX660 MAX660 abstract
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Abstract: eurotherm quality levels below 10ppm, and often below 1ppm. At the individual transistor level, quality has improved ... Original
datasheet

53 pages,
2249.56 Kb

ST marking code crolles TRANSISTOR SUBSTITUTION 1993 ISO STANDARDS SHEET METAL THINNING datasheet abstract
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Abstract: Issued July 1993 A15894 A15894 Bar code reading and printing The principles behind bar code reading A , environments: Print contrast value 0.5min l Direct sunlight _ Output NPN transistor , types: l Code 39 b) PC mode: Make Code, Break Code = Make Code + Interleaved 2 of 5 80H. l l , connected to + 70°C (+158°F) reading units is effected via keyboard interface. Working temperature , bars. These defects influence the readability and, in the worst case, can cause substitution errors. ... Original
datasheet

8 pages,
707.98 Kb

japanese transistor substitution inkjet head film hp inkjet print head japanese transistor manual substitution small size keymodule PORTABLE SIGNAL WAND hp inkjet printer control codes hp inkjet module laser barcode reader circuit hp inkjet head Transistor Substitution 1993 A15894 A15894 abstract
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Abstract: Corporation have settled their patent litigation that commenced on August 13, 1993. While both parties have , Product Highlights Book Maxim 1994 Evaluation Kits Data Book Maxim 1993 New Releases Data Book, Vol. II Maxim 1993 Applications & Product Highlights Book Maxim 1992 New Releases Data Book, Vol. I Maxim 1992 , more open-drain transistor drivers, each with a 50 resistive pull-up to a low-voltage source , MOSFET (vs. a bipolar transistor) provides an ultra-low dropout voltage and minimum quiescent current. ... Original
datasheet

23 pages,
199.44 Kb

Video amp with 2-channel video mux MAX2101 MAX306 MAX555 MAX781 MAX440 equivalent max-3063 TRANSISTOR SUBSTITUTION 1993 10uF 63V Electrolytic Capacitor ic Cross Reference book free max761 Pin-for-Pin Compatible WSL-2512-R025 MAX4005 datasheet abstract
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Transistor Array CA3083 CA3083 CA3083 CA3083 CA3083M CA3083M CA3083M CA3083M CA3083M96 CA3083M96 CA3083M96 CA3083M96", "General Purpose High Current NPN Transistor Array",". /device_CA3102 CA3102 CA3102 CA3102.html"); searchDB[37] = new searchOption("CA3127 CA3127 CA3127 CA3127", "High Frequency NPN Transistor Array CA3127E CA3127E CA3127E CA3127E CA3127M CA3127M CA3127M CA3127M >High Frequency NPN Transistor Array","./Device_Pages/device_CA3127 CA3127 CA3127 CA3127.html"); searchDB[38
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