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LT1993CUD-2 Linear Technology LT1993-2 - 800MHz Low Distortion, Low Noise Differential Amplifier ADC Driver (Av = 2V/V); Package: QFN; Pins: 16; Temperature Range: 0°C to 70°C
LT1993CUD-2#TRPBF Linear Technology LT1993-2 - 800MHz Low Distortion, Low Noise Differential Amplifier ADC Driver (Av = 2V/V); Package: QFN; Pins: 16; Temperature Range: 0°C to 70°C
LT1993CUD-2#PBF Linear Technology LT1993-2 - 800MHz Low Distortion, Low Noise Differential Amplifier ADC Driver (Av = 2V/V); Package: QFN; Pins: 16; Temperature Range: 0°C to 70°C
LT1993IUD-4#TR Linear Technology LT1993-4 - 900MHz Low Distortion, Low Noise Differential Amplifier/ADC Driver (AV = 4V/V); Package: QFN; Pins: 16; Temperature Range: -40°C to 85°C
LT1993CUD-4#TRPBF Linear Technology LT1993-4 - 900MHz Low Distortion, Low Noise Differential Amplifier/ADC Driver (AV = 4V/V); Package: QFN; Pins: 16; Temperature Range: 0°C to 70°C
LT1993CUD-10#TR Linear Technology LT1993-10 - 700MHz Low Distortion, Low Noise Differential Amplifier/ADC Driver (AV = 10V/V); Package: QFN; Pins: 16; Temperature Range: 0°C to 70°C

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TRANSISTOR SUBSTITUTION 1993

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 1993 Features Description â'¢ Single 5V Supply. 10mA , code substitution schemes. Unlike other industry standard transcoders, the HC-5560 provides four worldwide compatible mode selectable code substitution schemes, including HDB3 (High Density Bipolar 3), B6ZS, B8ZS (Bipolar with 6 or 8 Zero Substitution) and AMI (Alternate Mark Inversion). â'¢ Mode , PCM Transmission Lines where Pseudo Ternary Une Code Substitution Schemes are Desired â'¢ Any -
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PCM30 HC3-5560-5 MJ1440 MJ1471 TCM2201
Abstract: . 2, pp. 274-282, Feb. 1995. [19] _, The Mextram Bipolar Transistor Model, 1993, (implementation , a dominant influence on the distortion behavior of the bipolar transistor [9]. In conventional transistor models the modeling of q.s. is limited to the voltage drop over the fixed internal collector , are the same. II. The Modeling of Quasi-Saturation in Transistor Models In conventional transistor , simulation results obtained using the Gummel-Poon and Mextram models for the same transistor. We have chosen -
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volterra VOLTERRA VT c1e2 hp8566A TRANSISTOR SUBSTITUTION power semiconductor 1973
Abstract: , Inc. 1993 connected to a given test circuit containing a common base microwave power transistor , CESAT is a very strong function of collector current and transistor die temperature. The theoretical , two-section match consist of two /4 wave transformers. 1 AN1032 Table 1. Microwave Load Substitution , TRW MRA1417-6 broadband, high­gain transistor. Measurements were taken at 1400 MHz with input power Motorola
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trw rf semiconductors trw RF POWER TRANSISTOR AN-1032 MOTOROLA TRANSISTOR 726 MIL-C-17 trw rf transistor AN1032/D
Abstract: transistor. The power meter used was also a constant. Table 1 shows insertion loss, insertion loss , the square of VCESAT. V CESAT is a very strong function of collector current and transistor die , MOTOROLA SEMICONDUCTOR APPLICATION INFORMATIONOn This Product, © Motorola, Inc. 1993 For More Information , Substitution Study The vehicle used for this test was a production test fixture and correlation sample #2 for the TRW MRA1417-6 broadband, high­gain transistor. Measurements were taken at 1400 MHz with input Motorola
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motorola 5118 TRANSISTOR SUBSTITUTION DATA BOOK 1993 TRW Microwave Detector 726 MOTOROLA TRANSISTORS
Abstract: we touch upon the early development of current regulating devices; first the bipolar transistor circuits, then the original diode, and the potted circuits. Finally, field effect transistor circuits and , resistance and high voltage capability. In the early I950's, with the development of the transistor, current , field-effect transistor, lDSS> ¡s a measure of the drain current flowing with the gate-source shorted. Under , transistor with an internal gate to source connection, the "constant-current diode". Circuit diagrams -
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AN462 motorola 1961 motorola power transistor handbook dIODA zENER npn transistor 70 volt dioda zener type BE 84 dioda bridge AN-462 AN462/D
Abstract: National Semiconductor Application Note 622 William Harmon April 1993 INTRODUCTION This , Furthermore since there is only one switch it may be feasible to implement that switch with a transistor as opposed to a jumper The advantage to using a transistor is that the Ethernet thin wire Ethernet option , the software can issue to switch the transistor Also in looking at Figure 5 it is seen that two pulse , direct substitution of a bipolar SNI the DP8391 for the CMOS SNI 6 TL F 10446 ­ 7 FIGURE 7 TX g National Semiconductor
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DP8390 DP8392 NP5417 national network interface controller ethernet transformer Application Note DP83910 D-82256
Abstract: INCH POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 15 September 1997 MIL-PRF-19500/539B 15 June 1997 SUPERSEDING MIL-S-19500/539A 20 October 1993 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, DARLINGTON TRANSISTOR, NPN , -19500. 6.3 Substitution of JAN devices. JANTX quality level devices are a oneway direct substitute for JAN , , DARLINGTON TRANSISTOR, NPN, SILICON, POWER TYPES 2N6300, 2N6301 JANTX AND JANTXV 4. NATURE OF CHANGE New England Semiconductor
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2N6301 JANTX CC 3053 JANTX2N6300 MIL-PRF19500 MIL-PRF-19500
Abstract: quality levels below 10ppm, and often below 1ppm. At the individual transistor level, quality has improved STMicroelectronics
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ISO STANDARDS SHEET METAL THINNING SGS-Thomson zener smd eurotherm ST marking code crolles U.S.A Eurotherm Controls IEC 68-2-27 spectrometer
Abstract: Issued July 1993 A15894 Bar code reading and printing The principles behind bar code reading A key principle of optical reading is that, when illuminated, a light surface will reflect a major part , environments: Print contrast value 0.5min l Direct sunlight _ Output NPN transistor , bars. These defects influence the readability and, in the worst case, can cause substitution errors , 201234 An Electrocomponents Company © RS Components Ltd. 1993 RS Components RS Components
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HBCR-8300 cherry mx keymodule CCD MTBF psion cherry mx japanese transistor manual substitution
Abstract: , but since LV may be left open, the substitution of the MAX660 for the ICL7660 is simplified. LV must , Positive Multiplier and Negative Converter OUT - _ P.073'_ (1.85mm) TRANSISTOR COUNT = , , Sunnyvale, CA 94086 (408) 737-7600 © 1993 Maxim Integrated Products Printed USA SflThtSl ⡠D 1 D 2 -
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MAX660CPA MAX660C/D MAX660EPA MAX660ESA MAX660EJA MAX660MJA
Abstract: since LV may be left open, the substitution of the MAX660 for the ICL7660 is simplified. LV must be , MAX667 LBO 7 MAX660 150uF CAP- 1 620k 0.073" (1.85mm) TRANSISTOR COUNT = 89 , _Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 (408) 737-7600 © 1993 Maxim Maxim Integrated Products
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MAX660CSA duracell dl123a 674D United Chemi-Con 672D N5C2 MAX660-6 United Chemi-Con 673D 1N4148 DL123A MAXC001
Abstract: encryption. The core operation of DES is an array of 8 sboxes or substitution tables. Each sbox has 6 , common 130nm process design rules. Layout optimizations and rough transistor sizing is done to optimize , Architecture for FPGAs", in Proc. IEEE Custom Integrated Circuits Conf. (CICC), pp. 7.4.1-7.4.5, 1993 Altera
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1s4 spice TRANSISTOR SUBSTITUTION DATA BOOK optimized sbox schleicher
Abstract: June 1993 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, INSULATED GATE, BIPOLAR , specification covers the performance requirements for an insulated gate bipolar power transistor. Four levels of , Substitution information. Devices covered by this specification are substitutable for the manufacturers' and , ) 980415 3. DOCUMENT TITLE SEMICONDUCTOR DEVICE, INSULATED GATE, BIPOLAR TRANSISTOR, N-CHANNEL, SILICON -
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2N7367 2N7368 2N3768 IRGMIC50U marking 589A MIL-PRF-19500/589A MIL-S-19500/589
Abstract: function. The base drive signals that set the midpoint of the external switching differential transistor , ) and NPN (INO) buffer transistor pair. Analog in. A 1.0 nF capacitor to VEE is necessary for , . This effectively turns on either the transistor to the diode bridge or the transistor to ground , chip resistor Transistor, PNP Transistor, PNP Transistor, NPN Transistor, NPN Schottky Diode Bridge , -2818 The vendor numbers above are listed only as a guide. Substitution of devices with similar -
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4r5q Bt698 BT698K HF70ACB 698KHJ L698001
Abstract: attractive method for automatically switching RF transistor arrays on and off in RFIC PAs as a function of , these RF transistor arrays at predetermined average input RF power thresholds while maintaining gain regulation during the RF transistor switching, through envelope feedback. From this basic description, it , control the overall PA gain through feedback; 2) RF transistor arrays in the intermediate and power , . Its role is to detect the input and output envelope power, to trigger automatic RF transistor Skyworks Solutions
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Abstract: Corporation have settled their patent litigation that commenced on August 13, 1993. While both parties have , Product Highlights Book Maxim 1994 Evaluation Kits Data Book Maxim 1993 New Releases Data Book, Vol. II Maxim 1993 Applications & Product Highlights Book Maxim 1992 New Releases Data Book, Vol. I Maxim 1992 , open-drain transistor drivers, each with a 50 resistive pull-up to a low-voltage source (typically 1.5V). , MOSFET (vs. a bipolar transistor) provides an ultra-low dropout voltage and minimum quiescent current Maxim Integrated Products
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MAX555 MAX306 MAX781 MAX1771 MAX2101 telefunken asic max761 Pin-for-Pin Compatible MAX440 equivalent MAX4005 laser diode mosfet triggering circuit MAX100/101 MAX603/604 MAX796/797/799
Abstract: , © Motorola, Inc. 1993 For More Information Go to: www.freescale.com 1 ARCHIVED 2005 INTRODUCTION , .* *Grafoil is not an insulating material. THERMAL RESISTANCE FROM TRANSISTOR CASE TO MOUNTING SURFACE, R , MOUNTING SCREW TORQUE (INLBS) 0 THERMAL RESISTANCE FROM TRANSISTOR CASE TO MOUNTING SURFACE, R CS , ) Grafoil, .005 (.13) thick.* THERMAL RESISTANCE FROM TRANSISTOR CASE TO MOUNTING SURFACE, R CS ( C/WATT) THERMAL RESISTANCE FROM TRANSISTOR CASE TO MOUNTING SURFACE, R CS ( C/WATTS) Freescale Motorola
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AN1040 2088AB TO-210AA Package eb107 AAVID THERMALLOY COMPOUND 250 TO254AA AN1040/D
Abstract: MOTOROLA SEMICONDUCTOR APPLICATION INFORMATIONOn This Product, © Motorola, Inc. 1993 For More Information , .* *Grafoil is not an insulating material. THERMAL RESISTANCE FROM TRANSISTOR CASE TO MOUNTING SURFACE, R , MOUNTING SCREW TORQUE (INLBS) 0 THERMAL RESISTANCE FROM TRANSISTOR CASE TO MOUNTING SURFACE, R CS , ) Grafoil, .005 (.13) thick.* THERMAL RESISTANCE FROM TRANSISTOR CASE TO MOUNTING SURFACE, R CS ( C/WATT) THERMAL RESISTANCE FROM TRANSISTOR CASE TO MOUNTING SURFACE, R CS ( C/WATTS) Freescale Motorola
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motorola mhw 252 mhw 592 to220 torque for SELF TAPPING SCREW socket SELF TAPPING SCREW 32-microinch SIL-PAD density
Abstract: of Motorola, Inc. RF Application © Motorola, Inc. 1993 Reports 14 16 16 17 18 19 20 , ) 0 THERMAL RESISTANCE FROM TRANSISTOR CASE TO MOUNTING SURFACE, R CS ( C/WATT) THERMAL RESISTANCE FROM TRANSISTOR CASE TO MOUNTING SURFACE, R CS ( C/WATTS) AN1040 ° 1 0.9 0.8 0.7 , insulating material. THERMAL RESISTANCE FROM TRANSISTOR CASE TO MOUNTING SURFACE, R CS ( C/WATTS) THERMAL RESISTANCE FROM TRANSISTOR CASE TO MOUNTING SURFACE, R CS ( C/WATTS) 3a. TO-204AA (TO Motorola
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P4855-1 Ablestik belleville washer 33702 208ab P4855
Abstract: Volume Eleven NEWS BRIEFS Maxim reports record revenues for the third quarter 1993 2 , THE THIRD QUARTER 1993 SUNNYVALE, CA May 4, 1993 ­ Maxim Integrated Products, Inc. reported record net revenues of $28,384,000 for the third quarter of fiscal 1993, compared to $22,124,000 for the , 1993 to date, compared to 55 products introduced at this time last fiscal year. Our new product , Laboratories, Dec. 1971. 10ns/div Vargha, Douglas, conversations at Maxim Integrated Products, Feb. 1993 Maxim Integrated Products
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MX390 MAX152 MAX532 MAX724 MAX634-637 MAX485 SMD OP27 SMD IC, 8 PIN MAX1732 max663 spice KY smd transistor MX667 AD390 MAX186/188 MX667/767
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