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TRANSISTOR K 135

Catalog Datasheet MFG & Type PDF Document Tags

Di 762 transistor

Abstract: FS75R12KS4 . max. - - 0,042 K/W Innerer Wärmewiderstand Transistor / transistor,DC , pro Modul / per module thermal resistance, junction to case Transistor / transistor,DC , pro Zweig / per arm , total power dissipation T C=25°C, Transistor Ptot 500 W VGES +/- 20V V IF 75 , V VGE(th) 4,5 5,5 6,5 V Transistor / Transistor Kollektor-Emitter , FS75R12KS4 Charakteristische Werte / Characteristic values min. Transistor / Transistor
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Di 762 transistor TRANSISTOR K 135

FS75R12KS4

Abstract: , junction to case typ. max. - - 0,042 K/W - - 0,250 K/W RthJC Transistor , A Gesamt-Verlustleistung total power dissipation TC=25°C, Transistor Ptot 500 W , . - 3,00 - V - 3,60 - V VGE(th) 4,5 5,5 6,5 V Transistor / Transistor Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage IC = 75A, VGE = 15V , 125 - ns - 90 - ns - Transistor / Transistor 100 - ns IC = 75 A
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transistor 13003d

Abstract: 13003D ELECTRONIC 13003 HIGH VOLTAGE POWER TRANSISTOR FEATURES: High Voltage Capability High , VOLTAGE POWER TRANSISTOR MICRO ELECTRONICS LTD. 7th Floor.Enterprise Square Three.39 Wang Chiu , -08 ELECTRONIC 13003 HIGH VOLTAGE POWER TRANSISTOR MYBOL Min Nom Max A 9.0 10 11 , 3.25 G 2.3 H 13 J 0.48 0.50 0.55 0.65 0.75 0.85 K L N 4.6 P Q 3.8 3.9 4.0 R 0.9 1.0 1.1 13.5 14.0 14.5 S Z MICRO
Micro Electronics
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13003F transistor 13003d 13003D 13003a 13003a TRANSISTOR 13003C

RG-47

Abstract: °C Tc= 25°C; Transistor VCES IC, nom IC ICRM Ptot VGES IF IFRM I²t VISOL 1200 75 100 150 V A A A 350 W +/- 20 V 75 A 150 A 1,19 k A²s 2,5 kV Charakteristische Werte / characteristic values Transistor Wechselrichter / transistor inverter Kollektor Emitter Sättigungsspannung , Transistor Wechselrichter / transistor inverter IC= 75A, VCC= 600V Einschaltverzögerungszeit (induktive Last , )] R25 R/R P25 B25/50 min. typ. 5 max. k -5 - 5 % - - 20 mW - 3375 -
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RG-47 FS75R12KE3 499E-02 601E-02 364E-03 187E-05

transistor C5080

Abstract: transistor 2SC458 Application 1. Bipolar Transistor (cont) Package variation Use LF RF Lead insertion type TO -92 2SC1472(K) V , Up Package outline TO-92 M PAK C M PAK M PAK-4 CM PA K -4 A pplication UH F RF G aA sM E S FET , BB101C 3SK296 Vdd= 1 2 V V do = 6 V , 10 V V dd = 1 2 V VD D= 5 V Bipolar transistor MIX Bipolar transistor 2SC2732 2SC4229 2SC2736 2SC2734 2SC3793 2SC4197 2SC4416 2SC 4462 2SC4259 Low voltage , (cont) Package outline TO-92 MPAK CM PAK MPAK-4 CM PAK-4 Application UH F OSC Bipolar transistor
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OCR Scan
C5137 C5140 C5246 C4965 C5247 A1052 transistor C5080 transistor 2SC458 Transistor 2SA 2SB 2SC 2SD transistor 2sc1515 3SK228 3SK239A 3SK309 3SK186 3SK295 3SK194

SiGe POWER TRANSISTOR

Abstract: BFU510 SiGe wideband transistor BFU510 90° handbook, full pagewidth 1.0 +1 135° +0.5 10 , transistor BFU510 90° handbook, full pagewidth 135° 45° 1 GHz 0.25 180° 0.2 0.15 , DISCRETE SEMICONDUCTORS DATA SHEET M3D124 BFU510 NPN SiGe wideband transistor Product , NPN SiGe wideband transistor BFU510 FEATURES PINNING · Very high power gain PIN · , transistor for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package. QUICK REFERENCE
Philips Semiconductors
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SiGe POWER TRANSISTOR MSB842 SCA75

SiGe POWER TRANSISTOR

Abstract: BFU540 Product specification NPN SiGe wideband transistor BFU540 90° handbook, full pagewidth 135 , DISCRETE SEMICONDUCTORS DATA SHEET M3D124 BFU540 NPN SiGe wideband transistor Product , NPN SiGe wideband transistor BFU540 FEATURES PINNING · Very high power gain PIN · , wideband transistor for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package. QUICK , wideband transistor BFU540 LIMITING VALUES In accordance with the Absolute Maximum Rating System
Philips Semiconductors
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transistor bd 126

Abstract: BD139 TELEFUNKEN ELECTRONIC Creativeledinotoe*^ IN electronic BD 135 · BD 137 · BD 139 1?E D , * · BD 135, BD 136, BD 139 are comple mentary to BD 136, BD 138, BD 140 Collector connected with , .2/502.0888 E BD 135 Vcbo ^CEO ^EBO *c icM 45 45 BD 137 60 60 5 1 1,5 100 BD 139 80 80 V V V mA A mA W W °C °C N cm P,o, P.O, ri Wa " 1 8 150 - 5 5 ,.+ 1 5 0 70 ^thJA ^IhJC 100 10 K/W K/W 2532 F- 07 11 | i i 1 & TELEFUNKEN · BD 135 BD 137 BD 139
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OCR Scan
transistor bd 126 BD139 TRANSISTOR BD 139 transistor BD 135 TRANSISTOR BC 137 BD 139 N DIN41869 DIN125A 15A3DIN

TRANSISTOR Q2

Abstract: DI-102 minimum current gain K = 10 This is the ratio of transistor bias versus collector current (larger K , . Above the OV-off threshold (135 A), the DPA-Switch is disabled and below the OV-on threshold (131 A), the DPA-Switch becomes operational again. At start-up, transistor Q2 is pulled low (off) via resistor R5, so as not to interfere with the under-voltage detection threshold. Transistor Q2 is pulled high , turn-on level, at the defined threshold voltage (VIN(th) = 60 VDC). When turned-on, transistor Q2
Power Integrations
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DI-102 DPA423GN TRANSISTOR Q2 POWER INTEGRATIONS DI-102

Al2O3

Abstract: FS75R12KE3 / characteristic values Transistor Wechselrichter / transistor inverter Kollektor Emitter Sättigungsspannung , preliminary data Charakteristische Werte / characteristic values Transistor Wechselrichter / transistor , NTC-Widerstand / NTC-thermistor min. typ. max. R25 - 5 - k R/R -5 - 5 % P25 - - 20 mW B25/50 - 3375 - K - - 0,35 K/W - - 0,58 K/W RthCK - 0,009 - K/W Höchstzulässige Sperrschichttemp. maximum junction
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FS75R12KE3G Al2O3

2SA1444 equivalent

Abstract: transistor equivalent table CD-ROM Transistor CD-ROM X13769XJ2V0CD00 08-1 Transistor Quick Reference by Package TO­92 s TO-92 Type Transistor VCEO (V) ~15 IC (A) ~20 m 2SA1206 ~50 m 2SC1674 2SA988 2SA992 , ~400 ~100 m ~500 m ~1.0 ~2.0 ~3.0 1) VCES : Darlington transistor, : High hFE transistor, : High speed switching, : Contains internal zener diode CD-ROM X13769XJ2V0CD00 08-2 Transistor Quick Reference by Package s SST Type Transistor VCEO (V) I C (A) ~20 m ~50 m SST ~15
NEC
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2SA1444 equivalent transistor equivalent table BA1F4M 2sd882 equivalent POWER MOS FET 2sj 2sk 2SK type 2SC1841 2SC1845 2SA733 2SA990 2SC945 2SC1842

DI-102

Abstract: DPA423G IOV_OFF Control-pin voltage Assumptions: VQ1(BE) = 0.7 VDC = 100 K = 10 Transistor base-emitter , via the current in L-pin resistor RLS. Above the OV-off threshold (135 µA), the DPA-Switch is , , transistor Q2 is pulled low (off) via resistor R5, so as not to interfere with the under-voltage detection threshold. Transistor Q2 is pulled high (on) via resistor R4 and will turn on once the input voltage , turned-on, transistor Q2 connects the Control pin (C) voltage (VC) to the L-pin via R6, thus adding a fixed
Power Integrations
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DPA423G

FS75R12KE3

Abstract: FS75R12KE3G values Transistor Wechselrichter / transistor inverter Kollektor Emitter Sättigungsspannung collector , / characteristic values Transistor Wechselrichter / transistor inverter min. typ. max. - 260 - , . typ. max. R25 - 5 - k R/R -5 - 5 % P25 - - 20 mW B25/50 - 3375 - K - - 0,35 K/W - - 0,58 K/W RthCK - 0,009 - K/W Höchstzulässige Sperrschichttemp. maximum junction temperature Tvjmax - -
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transistor number code book FREE

Abstract: Q67000-A9243-A904 connected to the 5 V output via an integrated resistor of 30 k. 3 GND Ground; internally connected , transistor via a buffer. Saturation control as a function of the load current prevents any over-saturation , Notes min. VI Tj 42 V ­ ­ 40 150 °C ­ ­ 65 70 K/W K/W TO263, TO2521) Rthjc Zthjc Junction temperature 6 Rthja Input voltage max. ­ 3 2 K/W K/W Thermal Resistance Junction ambient Junction case 1) t < 1 ms (TO-220/263
Siemens
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Q67000-A9209-A903 Q67000-A9243-A904 Q67006-A9201-A901 P-TO263-5-1 Q67000-A9209-A801 Q67000-A9243-A802 transistor number code book FREE TO220 HEATSINK DATASHEET P-TO220-5-11 P-TO220-5-12 P-TO220-5-1
Abstract: CM PA K-4 BFG325W/XR NPN 14 GHz wideband transistor Rev. 2 - 15 September 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4 , GHz wideband transistor [1] Gmax is the maximum power gain, if K > 1. If K < 1 then Gmax = MSG , GHz wideband transistor 90° +1 135° + 0.5 +2 45° 1.0 0.8 0.6 0.4 0.2 180° 0 0.2 0.5 1 2 5 10 0° 0 , NXP Semiconductors BFG325W/XR NPN 14 GHz wideband transistor 90° 135° 45° 3 GHz 0.5 NXP Semiconductors
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BFG325W

10GHz oscillator

Abstract: 4 pin dual-emitter Preliminary specification NPN SiGe wideband transistor BFU510 90° 1.0 +1 135° +0.5 10 GHz , Semiconductors Preliminary specification NPN SiGe wideband transistor BFU510 90° 45° 135 , DISCRETE SEMICONDUCTORS M3D124 BFU510 NPN SiGe wideband transistor Preliminary , transistor BFU510 PINNING FEATURES · Very high power gain PIN · Very low noise figure 1 , Fig.1 Simplified outline SOT343R. NPN SiGe wideband transistor for low voltage applications in a
Philips Semiconductors
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10GHz oscillator 4 pin dual-emitter RF TRANSISTOR 10GHZ RCS9 RF TRANSISTOR 2.5 GHZ s parameter transistor outline X packing SCA73

bfp640f

Abstract: transistor cross reference chart Silicon-Germanium Transistor as 5 -6 GHz Single-Stage Low Noise Amplifier (LNA), with reduced external component , Silicon-Germanium Transistor as 5 -6 GHz Single-Stage 1 BFP640F Low-Noise Silicon-Germanium Transistor as 5 -6 , Silicon-Germanium Transistor as 5 -6 GHz Single-Stage Summary Achieved 10 dB gain, 1.3 dB Noise Figure over the , Silicon-Germanium Transistor as 5 -6 GHz Single-Stage Summary of Data T = 25 °C, network analyzer source power = , Application Note No. 126 BFP640F Low-Noise Silicon-Germanium Transistor as 5 -6 GHz Single-Stage Schematic
Infineon Technologies
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transistor cross reference chart AN082 BFP640 amplifier TRANSISTOR 12 GHZ

5bb1

Abstract: C11531E DATA SHEET COMPOUND TRANSISTOR BB1 SERIES on-chip resistor NPN silicon epitaxial transistor For mid-speed switching The BB1 Series is an N type small signal transistor and enables the reduction of component counts and downsizing of sets due to on-chip resistors. This transistor is , R1 (K) Electrode Connection 1. Emitte (E) 2. Collector (C) 3. Base (B) R2 (K) BB1A4A - , additional information. Document No. D11739EJ2V0DS00 (2nd edition) Date Published April 2002 N CP(K
NEC
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C11531E 5bb1

4 pin dual-emitter

Abstract: BFU510 transistor BFU540 90° 1.0 +1 135° 45° +0.5 10 GHz 5 GHz 0.8 +2 0.6 5 GHz , NPN SiGe wideband transistor BFU540 90° 45° 135° 1GHz 180° 0.25 0.20 0.15 , DISCRETE SEMICONDUCTORS M3D124 BFU540 NPN SiGe wideband transistor Preliminary , transistor BFU540 PINNING FEATURES · Very high power gain PIN · Very low noise figure 1 , Fig.1 Simplified outline SOT343R. NPN SiGe wideband transistor for low voltage applications in a
Philips Semiconductors
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RF TRANSISTOR 10GHZ low noise TRANSISTOR FOR 10GHz oscillator RF NPN power transistor 2.5GHz transistor bf 520 RF NPN POWER TRANSISTOR 2.5 GHZ

4 pin dual-emitter

Abstract: BFU540 wideband transistor BFU540 90° 45° 135° 1GHz 180° 0.25 0.20 0.15 0.10 0.05 , DISCRETE SEMICONDUCTORS M3D124 BFU540 NPN SiGe wideband transistor Preliminary , transistor BFU540 PINNING FEATURES · Very high power gain PIN · Very low noise figure 1 , Fig.1 Simplified outline SOT343R. NPN SiGe wideband transistor for low voltage applications in a , Semiconductors Preliminary specification NPN SiGe wideband transistor BFU540 LIMITING VALUES In
Philips Semiconductors
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MARKING A4 transistor o-50 transistor D 587
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