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Part Manufacturer Description Datasheet BUY
LTC2627CDE#TR Linear Technology LTC2627 - 12-Bit Dual Rail-to-Rail with I<sup>2</sup>C Interface; Package: DFN; Pins: 12; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy
LTC2627IDE-1#TRPBF Linear Technology LTC2627 - 12-Bit Dual Rail-to-Rail with I<sup>2</sup>C Interface; Package: DFN; Pins: 12; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LTC2627IDE Linear Technology LTC2627 - 12-Bit Dual Rail-to-Rail with I<sup>2</sup>C Interface; Package: DFN; Pins: 12; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LTC2627CDE#PBF Linear Technology LTC2627 - 12-Bit Dual Rail-to-Rail with I<sup>2</sup>C Interface; Package: DFN; Pins: 12; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy
LTC2627CDE-1 Linear Technology LTC2627 - 12-Bit Dual Rail-to-Rail with I<sup>2</sup>C Interface; Package: DFN; Pins: 12; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy
LTC2627CDE-1#TR Linear Technology LTC2627 - 12-Bit Dual Rail-to-Rail with I<sup>2</sup>C Interface; Package: DFN; Pins: 12; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy

TRANSISTOR D 2627

Catalog Datasheet MFG & Type PDF Document Tags

TRANSISTOR D 2627

Abstract: processing available D E S C R IP T IO N The SG1627 series devices are monolithic, high-speed driver , two independent drivers which will either source or sink up to 500mA of current. The sink transistor is designed as a saturating switch while the source transistor can be used either as a switch or as a , the SG3627 for 0°C to 70°C. S C H E M A T IC (one-half of total device shown) B L O C K D IA G R , , 2627 . S G 362 7
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TRANSISTOR D 2627 SG1627ISG2627/SG3627 SG1524 MIL-STD-883 SG2627 SG1627/SG2627/SG3627 16-PIN

TRANSISTOR D 2627

Abstract: SG3627 500 2 0 0 n s /d lv ls io 20 0 - s / d ^ s i o COLLECTOR CURRENT - FIGURE 4. SINK TRANSISTOR , either source or sink up to 500mA of current. The sink transistor is designed as a saturating switch while the source transistor can be used either as a switch or as a constant current generator with , 20V Source or Sink Current, D C . 500mA Note 1. Exceeding these ratings could , 20V Source or Sink Current, D C .0mA to 500mA Note 2. Range over
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SG1627J SG3627J 20ii2 SG1627J/883B SG2627J

TRANSISTOR D 2627

Abstract: Silicon General SG1524 SILICON GENERAL INC 11 D E ^ 0253000 DG01373 Q |~~I7-£ Z ~ !7 SiLifion BenBPaL LINEAR INTEÇRATED CIRCUITS SG1627 1SG2627 1SG3627 . DESCRIPTION D U A L HIGH-CURRENT O U TPU T DRIVER , source or sink up to 500 mA of current. The sink transistor Is designed as a saturating switch while the , Supply Voltage, V c c SG1627,2627 20V . 3627 30V Output Collector Voltage SG1627,2627 SG3627 20V 500 mA , output transistor, factored duty cycle. ELECTRICAL CHARACTERISTICS Unless otherwise stated
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Silicon General SG1524

TRANSISTOR D 2627

Abstract: transistor D 2624 transistor orientation on the tape is shown in Fig. 7.4 and Fig. 7.5. 2517 E-06 A 27 I 17E D â , DQQRMÃ"? - BU 546 Silicon NPN Power Transistor Applications; Switching mode power supply Features: â , BU 546 I?E D â  Ã¶Tsoo'ib Doomaa s malgg T-33-13 I Characteristics â  25 0 C, unless otherwise , time 0.5 ijs "^â'¢S0.01,fp=0.1 ms 104 2625 F-02 1?E D fi^EOORb DOOmfi6) 4 ' BU 546 T-33-13 - . , 2627 F-04 fci I - -. TELEFUNKEN ELECTRONIC 2628 F-Û5 TELEFUNKEN ELECTRONIC BU 546 °CB
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T0126 transistor D 2624 transistor k 2628 TRANSISTOR 1300 3B on 2518 transistor marking code transistor ND BU546 15A3DIN

TRANSISTOR D 2627

Abstract: transistor D 2624 DQQRMÃ"? - BU 546 Silicon NPN Power Transistor Applications; Switching mode power supply Features: â , BU 546 I?E D â  Ã¶Tsoo'ib Doomaa s malgg T-33-13 I Characteristics â  25 0 C, unless otherwise , time 0.5 ijs "^â'¢S0.01,fp=0.1 ms 104 2625 F-02 1?E D fi^EOORb DOOmfi6) 4 ' BU 546 T-33-13 - . , 2627 F-04 fci I - -. TELEFUNKEN ELECTRONIC 2628 F-Û5 TELEFUNKEN ELECTRONIC BU 546 °CB 300 PF 200 100 17E D â  ÃREQGRb OGOTM^S 4 â  AL6G T-33-13 â'¢2380T â
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Telefunken Electronic Telefunken 105 ic 546 transistor BU 104 CB-108 DIN 41872

AVANTEK transistor

Abstract: Silicon Bipolar Transistor Avantek 70 mil Package Features â'¢ Q0Db472 â'¢ Low Noise Figure: 1.6 d B typical at 2.0 G Hz 3.0 d B typical at 4.0 G Hz High A ssociated Gain: 14.5 d B typical at 2.0 GHz 10.5 d B typical at 4.0 GHz High Gain-Bandwidth Product: 8.0 G Hz typical fr â , ance N PN silicon bipolar transistor housed in a hermetic, high reliability package. This device is , F and micro­ w ave frequencies. (unless otherwise specified) 1. D im ensions are ^ 2
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AVANTEK transistor AT-41470

12 volt smps Circuit diagram

Abstract: tea2029c are. possible : - D Class : Pow er stage using an external thyristor. - B Class : Power stage using an , , independent of Vcc and any delay in switching off the scanning transistor. Video Identification The horizontal , line frequency. The power transistor is turned off by the falling edge of the horizontal saw-tooth. The , Symbol Supply Current (pin 8, frame, line and SMPS output without load) Icc SYNCH SEPARATOR (Pins 26-27 , (c o n t in u e d ) Parameter Positive Current Negative Current Output Current Output Saturation
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TEA2261 12 volt smps Circuit diagram tea2029c 6V SMPS circuit diagram 24 volt smps power supply 3 phase smps circuit diagram pulse width modulator for smps TEA2029C DIP28 50/60HZ TDA8172

mpsa14

Abstract: transistor k 2628 Technical Figure 1. Transistor Noise Model Motorola Small-Signal Transistors, FETs and Diodes Device Data , Current Gain hF E , D C CURRENT GAIN 0.1 lc. COLLECTOR CURRENT (mA) 0.2 0.5 1.0 2.0 5.0 , Device Data 2-627 MPSA13 MPSA14 RESISTANCE (NORMALIZED) r(t), TRANSIENT THERMAL I, TIME
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transistor k 2628 Technical MPS-A14 Small-Signal Transistors, FETs and Diodes Device PSA14
Abstract: What HEW LETT 1"UM P A C K A R D Up to 6 GHz Low N oise Silicon Bipolar Transistor Technical , geometry yields an intermediate sized transistor with impedances that are easy to m atch for low noise and , transistor is fabricated using Hewlett-Packard's 10 GHz fT Self-Aligned-Transistor (SAT) process. The die is , bipolar transistor that offers excellent high frequency performance. The AT-41470 is housed in a hermetic , this transistor to be used in many different functions. The 14 emitter 2 AT-41470 A bsolute -
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5965-8927E 5966-4946E

pepi c

Abstract: TRANSISTOR D 2627 MOTOROLA SC (XSTRS/R F) MOTOROLA SEMICONDUCTOR TECHNICAL DATA i4bE D â  b3b7254 00T4b4b ô I T-33-cR MOTb MRF427 MRF427A The RF Line NPN SILICON RF POWER TRANSISTOR . . . designed , % Tested for Load Mismatch at all Phase Angles with 30:1 VSWR 25 W (PEP)-30 MHz RF POWER TRANSISTOR NPN , MIN MAX MIN MAX * 12.45 12.95 0.494 0.510 a 10.54 io.ao 0.415 0.425 c 1988 22.73 0.775 0.895 D , Respective Manufacturer MRF427, MRF427A MOTOROLA SC (XSTRS/R F) 4bE D â  b3b?254 OCHMbHT 3 â  flOTb
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pepi c pepi cr arco 469 trimmer capacitor pepi arco TRIMMER capacitor 463 s49 transistor T-33- T-33-09
Abstract: T hat H E W IT T mL'ftm PACKARD Up to 6 GHz Low Noise Silicon Bipolar Transistor Technical , Gain-Bandwidth Product: 8.0 GHz Typical ff â'¢ Hermetic, Gold-ceramic M icrostrip Package D escription Hewlett-Packardâ'™s AT41470 is a general purpose NPN bipolar transistor that offers excellent high frequency , . The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 14 em itter finger interdigitated geometry yields an intermediate sized transistor with -
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Abstract: The SD2941-10 is a gold metallized N-Channel MOS field-effect RF power transistor, intended for use , 50 UA 'GSS VGS = 20 V VDS = 0 V 250 nA VGS(Q) (2) V D S =10V ID = 250mA , P 3.3-3.4 BB 1.6- 1.7 F 2.5-2.6 Q 3.4 - 3.5 CC 1,7- 1.8 G 2.6-2.7 , 3.9 - 4.0 C 2.2-2.3 M 3.1 -3.2 D 2.3-2.4 N 3.2-3.3 SD2941-10 Mechanical , . 5.584 TYP. 0.219 MAX A B 5.56 3.18 C D 6.22 E 18.28 0.125 6.48 New Jersey Semiconductor
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175MH SD2931-10

TRANSISTOR D 2627

Abstract: 4N32 Gallium Arsenide LED optically coupled to a Silicon Photo Darlington Transistor designed for applications , ~~:~~ temperature Range TJ -55 Tstg So(d>;F#~emperature -55to Oc +150 - (10 s) Oc , 2.0 o 1: 1. 2. 3. 4. 5. 6. volts 150 D STYLE PIN 3" = 25°C Equal Power , ,:' `~ai, , I mA Power in Transistor PHOTOTRANSISTOR ., - ,- >,. .4% , than 50 mW. CASE MOTOROLA INC 1977 730-01 DS 2627 f ,LED CHARACTERISTICS (TA =
Motorola
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4N324 4N29A 2N6165 4N32 4N33 MOTOROLA 4N29 4N31 4H29A 60HZA 1N4003

TRANSISTOR D 2627

Abstract: mpsa14 I-1 Figure 1. Transistor Noise Model b3b72SS D 0 , MPSA14 NOISE CHARACTERISTICS ( V C e = 5.0 V d c , T a = 25 °C ) en , NOISE VOLTAGE (nV) f , Frequency Current Gain hpg, D C CURRENT GAIN IC, COLLECTOR CURRENT (mA) lB, BASE CURRENT (nA , b3b?255 001331b 200 2-627 Motorola Small-Signal Transistors, FETs and Diodes Device Data
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WJA27

Abstract: Transistor Power Dissipation P d . 0.435 W Junction Temperature Rise Above Case Tjc , 6 MAG 2.573 2.570 2.574 2.591 2.572 2.548 2.532 2.579 2.592 2.627 2.638 2.651 2.639 2.634 2.606
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WJA27 WJ-A27 SMA27
Abstract: P h ilip ^ e m ic o n d u c to r^ ^ ^ â  b b 5 3 T 31 Q0 3 1 b b 5 1ST H i APX Product specification NPN 6.5 GHz wideband transistor ^ â'" DESCRIPTION BFQ135 N AMER PHILIPS/DISCRETE bTE D PINNING NPN transistor in a 4-lead dual-emitter SOT172A1 envelope with a , wideband transistor BFQ135 N AMER PHILIPS/DISCRETE b5E D CHARACTERISTICS Tj = 25 °C unless , transistor - N AUER PHILIPS/DISCRETE BFQ135 b5E D Table 1 Common emitter -
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TRANSISTOR D 2627

Abstract: D 4206 TRANSISTOR wideband transistor BFQ135 N AMER PHILIPS/DISCRETE blE D DESCRIPTION NPN transistor in a 4 , transistor BFQ135 - N A PIER PHILIPS/DISCRETE blE D CHARACTERISTICS T, = 25 °C unless otherwise specified ,   APX 'roduct specification NPN 6.5 GHz wideband transistor BFQ135 - N AMER PHILIPS/DISCRETE b^E D L2 , transistor BFQ135 N AMER PHILIPS/DISCRETE b'ÌE D -30 dlm (dB) -40 -50 -70 -80 50 : 18 V. 160 . , wideband transistor BFQ135 - N AHER PHILIPS/DISCRETE b'lE D Table 1 Common emitter scattering parameters
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D 4206 TRANSISTOR transistor 224-1 base collector emitter bfq135 scattering 1817 transistor TRANSISTOR C 2570 c 2570 transistor S3T31

2Sc2622

Abstract: 2SA1126H - 5 - FOR USE BY ELECTRICIANS OVERSEAS : HBrhSliSIXSIftlSK (New Transistor Manual) lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by , / , » 150 5 50 1.5W 150 1 100 65-450 5 10 10 -10 160 * 2 268 2SAU25 £ d > -/ ' 1 » 2634 " » 60 7
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175MHZ 2Sc2622 2SA1126H 2SA1126 K 2645 transistor 337C 470MH 200MH 470M1
Abstract: ) THROUGH A LOW COST TRANSFORMER DIP28 (Plastic Package) O R D ER C O D E : TEA2029C PIN , : - D Class : Power stage using an external thyristor. - B Class : Power stage using an external , , independent of Vcc and any delay in switching off the scanning transistor. Video Identification The , voltage of 1.26V and a phase modulator operating at the line frequency. The power transistor is turned , . Unit 80 mA S Y N C H SEPA RA TO R (Pins 26-27) Positive Video Input A C Coupled (output -
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eht transformer used in color tv

Abstract: circuit diagram of 12 volt smps power supply Frame scanning processor. Two applications are possible : - D Class : Power stage using an external , and any delay in switching off the scanning transistor. Video Identification The horizontal , frequency. The power transistor is turned off bythe falling edge of the horizontal saw-tooth. The "soft , /9 Vpp µA µA 2029C-03.TBL SYNCH SEPARATOR (Pins 26-27) TEA2029C ELECTRICAL OPERATING , nA µA SYNCH SEPARATOR (Pins 26-27) (continued) ­ I26 I26 Positive Current Negative Current
STMicroelectronics
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eht transformer used in color tv circuit diagram of 12 volt smps power supply circuit diagram of smps 220v philips tv flyback transformer data pin flyback transformer philips TV smps 12 volt 50/60H PM-DIP28
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