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TLC59283RGET Texas Instruments 16 Channel Constant Current LED Driver with Pre-Charge FET 24-VQFN -40 to 85 visit Texas Instruments
TLC59283RGER Texas Instruments 16 Channel Constant Current LED Driver with Pre-Charge FET 24-VQFN -40 to 85 visit Texas Instruments Buy
TLC59283DBQ Texas Instruments 16 Channel Constant Current LED Driver with Pre-Charge FET 24-SSOP -40 to 85 visit Texas Instruments
TLC59283DBQR Texas Instruments 16 Channel Constant Current LED Driver with Pre-Charge FET 24-SSOP -40 to 85 visit Texas Instruments Buy
TLC59281RGER Texas Instruments 16-Channel, Constant-Current LED Driver without LED Open Detection 24-VQFN -40 to 85 visit Texas Instruments Buy
TLC59281RGE Texas Instruments LED DISPLAY DRIVER, PQCC24, GREEN, PLASTIC, VQFN-24 visit Texas Instruments

TRANSISTOR C 5928

Catalog Datasheet MFG & Type PDF Document Tags

TRANSISTOR C 5928

Abstract: PT8502 2N 5928 120 V 120V 10V 150 A 100 A 350W 200W 0.5°C /W -65 to 200° C -65 to 200°C Storage , BIG IDEAS IN PowerTech BIG POWER '' 150 AMPERES 2N5928 PT-85D2 SILICON NPN TRANSISTOR FEATURES: V C E (s a t). V B E . 1.0 V @ 100 A 2.0 , devices, resulting in considerable reductions in w eight, space and c irc u it co m p le xity. T h e ir re lia b ility is assured through 100% pow er testing at 50V , 4 A @ 100°C case tem perature. These tra n
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TRANSISTOR C 5928 PT8502 NPN 350W powertech T8502

TC2481

Abstract: ao 4604 TC2481 is packaged with the TC1401 Pseudomorphic High Electron Mobility Transistor (PHEMT) chip. All , power amplifiers for commercial applications. ELECTRICAL SPECIFICATIONS (TA=25 °C) Symbol , Volts 50 °C/W Note: * PSCL: Output Power of Single Carrier Level. * For the tight control of , : 886-6-5050086 Fax: 886-6-5051602 P1/4 TC2481 REV4_20070507 ABSOLUTE MAXIMUM RATINGS (TA=25 °C) Symbol , 12 V -5 V IDSS 26 dBm 1.9 W 175 °C - 65 °C to +175 °C RECOMMANDED OPERATING CONDITION
Transcom
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ao 4604 4604 TC-2481

gsm module 900

Abstract: delta v dcs Heterojunction Bipolar Transistor (HBT) process and containing also internal components for input and output , +150 C Operating Temperature -25 +85 C Duty Cycle at Max. Power 50 % Output , Condition Max. 34.5dBm (Temp=+25 C, Vcc=3.5V, 4-slot) 880MHz to 915MHz @ saturated output power , FAX : 353-61-336240 INDUSTRIEGEBIED VENLO NR. 9031, COLUMBUSWEG 20, NL-5928 LC VENLO, THE
Delta Electronics
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DLT3201 GSM900 NL-5928 gsm module 900 delta v dcs B100 DCS1800/PCS1900 FIN-00101 DMP-DLT3201

2SA1462

Abstract: GM0B SEC m^Ttvrx 'j =1 > h Silicon Transistor 2SA1462 i&mjgx'f'y^rm PNP Silicon Epitaxial Transistor High Speed Switching #ë/FEATURES OXfyf> /jÃKÃ"'ji^o t«, : 9.0 ns TYP., tstg : 16 ns TYP ,   u ? 9 m m. (m. m) IC(DC) -50 mA 3 u- 9 9 1 m l'^x) T * C(pulse) -100 mA £ tt , 19 40 ns t£ en Y 33 Y 34 hrt:2 50-100 75-150 TC â'" 5928 JAN.-31-86M © 1986 NEC Corporation , ) c b o6
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GM0B 3111R JE 33 TRANSISTOR BO 346 J-10 T108 2SC3735 SC-59
Abstract: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES LOW NOISE: NF = 1.3 , Storage Temperature UNITS V V V mA mW mW °C °C RATINGS 5 3 2 30 90 180 150 -65 t o +150 Ic Pt , VCE = 2 V / 0 50 100 150 0 0.5 1.0 Ambient Temperature, T a (°C) DC Base Voltage, V , < E 200 nA 180 -1 6 0 140 mA mA mA C O o o 3 Ç < 0 3 o o o 120 pA Q ) 80 nA 60 , (mA) 3-289 UPA828TF TYPICAL PERFORMANCE CURVES (Ta = 25 c) GAIN BANDWIDTH PRODUCT vs -
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NE687 UPA828TF-T1

sanyo ic 7550

Abstract: IC 7458 Ordering number : ENN7321 2SC5781 NPN Epitaxial Planar Silicon Transistor 2SC5781 , at Ta=25°C Parameter Symbol Collector-to-Base Voltage Conditions Ratings Unit 9 V , Collector Dissipation IC PC 100 mW Junction Temperature Tj 150 °C Storage Temperature Tstg -55 to +150 °C Collector Current Marking : NK Pay attention to handling , -100013 No.7321-1/7 2SC5781 Electrical Characteristics at Ta=25°C Parameter Symbol min typ
SANYO Electric
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sanyo ic 7550 IC 7458 Transistor C 4927 16451 ic D2502 7522 ps

ha 13483

Abstract: j 6815 transistor PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA828TF FEATURES LOW NOISE , utline TS06 (Top View) HIGH GAIN: |S 21 e |2 = 8.5 dB TYP at f = 2 GHz, V c e = 2 V, Ic = 20 m A , . ELECTRICAL CHARACTERISTICS (Ta = 25 c) PART NUM BER PACKAGE OUTLINE SYM BO LS ICBO Iebo hFE UPA828TF , 0.1 140 PARAM ETERS AND CO NDITIONS Collector Cutoff Current at V c b = 5 V , I e = 0 Emitter Cutoff Current at V eb = 1 V, Ic = 0 DC Current Gain1 at V c e = 2 V , Ic = 20 mA Gain Bandwidth at V c e
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ha 13483 j 6815 transistor transistor 9647 NEC IC 5020 098 LS 7405

ba 3822 ls

Abstract: BA 7312 PRELIMINARY DATA SHEET NEC FEATURES LOW NOISE: NPN SILICON EPITAXIAL TWIN TRANSISTOR , = 2 GHz, Vce = 2 V, Ic = 3 m A HIGH GAIN: |S 21 e |2 = 8.5 dB TYP at f = 2 GHz, V c e = 2 V, Ic , circle on the bottom of the package. ELECTRICAL CHARACTERISTICS (Ta = 2 5 PART NUM BER PA C KA G E O UTLINE SY M B O LS ICBO I ebo hFE c) UPA828TF TS06 UNITS HA HA 70 GHz GHz PF dB dB 7 6 1.3 1.3 0.85 , ce = 2 V, Ic = 20 mA Gain Bandwidth at V c e = 2 V, Ic = 20 mA, f = 2 GHz Gain Bandwidth at V c e = 1
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ba 3822 ls BA 7312 BA 6688 L em 6695 6 pin ic 6628 BA 5977 NE856 PA828TF PA828TF-T1

ic 7809

Abstract: OF IC 7809 PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES OUTLINE DIMENSIONS , read left to right. ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS , Eastern Laboratories UPA828TF ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS PARAMETERS UNITS , Dissipation 1 Element 2 Elements mW mW 90 180 TJ Junction Temperature °C 150 TSTG Storage Temperature °C -65 to +150 Note: 1.Operation in excess of any one of these parameters
NEC
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ic 7809 OF IC 7809 electrical characteristics IC 7809 3699 npn S21E

sanyo ic 7550

Abstract: 5645 marking Ordering number : ENN7321 2SC5781 NPN Epitaxial Planar Silicon Transistor 2SC5781 , Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage , °C Storage Temperature Tstg -55 to +150 °C Collector Dissipation Marking : NK , , TOKYO, 110-8534 JAPAN D2502 TS IM TA-100013 No.7321-1/7 2SC5781 Electrical Characteristics at Ta=25°C , Temperature, Ta - °C 140 160 IT04850 No.7321-3/7 2SC5781 S Parameters (Common emitter) VCE
SANYO Electric
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5645 marking OF IC 7270 276-143 6221 ic marking 12697 9109 DC

soft start and stop circuit 555 timer

Abstract: BD8316GWL P-board P N Parasitic element C Transistor (NPN) B N E GND P N P P N , -0Q1Q0AJ00170-1-2 2012.08.03 Rev. 003 BD8316GWL Pin Description Datasheet C B A 1 2 3 4 Fig.2 Pin assignment (Bottom view) Pin No. A-1 A-2 A-3 A-4 B-1 B-3 B-4 C-1 C-2 C-3 C-4 Pin Name VDD HS2L LX2 GND LX1 , -50 -50 3.7 3.7 1.2 1.2 -1 -1 -1 1.5 -0.3 500 - MAX 2.35 150 1.76 90 90 -5.928 12.5 0.808 50 50 4.7 , -0Q1Q0AJ00170-1-2 2012.08.03 Rev. 003 BD8316GWL Typical Performance Characteristic (Unless otherwise specified, Ta = 25°C
ROHM
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soft start and stop circuit 555 timer bd8210 voltage to frequency converter using ic 555 timer UCSP50L1 F/10V

soft start and stop circuit 555 timer

Abstract: soft start circuit 555 timer P-board Transistor (NPN) B C E GND P N P P N P N P-board P , Rev. 003 BD8316GWL Pin Description Datasheet C B A 1 2 3 4 Fig.2 Pin assignment (Bottom view) Pin No. A-1 A-2 A-3 A-4 B-1 B-3 B-4 C-1 C-2 C-3 C-4 Pin Name VDD HS2L LX2 GND LX1 , -50 -50 3.7 3.7 1.2 1.2 -1 -1 -1 1.5 -0.3 500 - MAX 2.35 150 1.76 90 90 -5.928 12.5 0.808 50 50 4.7 , -0Q1Q0AJ00170-1-2 2012.08.03 Rev. 003 BD8316GWL Typical Performance Characteristic (Unless otherwise specified, Ta = 25°C
ROHM
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soft start circuit 555 timer 3 pin FET smd 2300

soft start and stop circuit 555 timer

Abstract: MLP2520S Terminal A Terminal B P N P-board C Transistor (NPN) B E GND P N P P N , -0Q1Q0AJ00170-1-2 2012.12.01 Rev.001 BD8316GWL Pin Description C B A 1 2 3 4 Fig.2 Pin No. A-1 A-2 A-3 A-4 B-1 B-3 B-4 C-1 C-2 C-3 C-4 Pin Name VDD HS2L LX2 GND LX1 STB1 STB2 DIS1 VREF NON1 INV2 Pin , 3.7 1.2 1.2 -1 -1 -1 1.5 -0.3 500 - MAX 2.35 150 1.76 90 90 -5.928 12.5 0.808 50 50 4.7 4.7 480 160 , -0Q1Q0AJ00170-1-2 2012.12.01 Rev.001 BD8316GWL Typical Performance Characteristic (Unless otherwise specified, Ta = 25°C
ROHM
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MLP2520S TSZ2211114001 NR3012T4R7M

CGH40006

Abstract: f 14019 amplifier electron mobility transistor (HEMT). The CGH40006, operating from a 28 volt rail, offers a general , amplifier circuits. The transistor is available in Package Type s: 440109 PN's: CGH40 006P , notice. www.cree.com/wireless 1 Absolute Maximum Ratings (not simultaneous) at 25°C Case , Gate-to-Source Voltage VGS -10, +2 Volts Storage Temperature TSTG -55, +150 °C Operating Junction Temperature TJ 225 °C Maximum Forward Gate Current mA IGMAX 2.1 Soldering
Cree
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f 14019 amplifier CGH40006P-TB transistor j352 006P J352 RO5880 CGH40006P

GRM21BB31A

Abstract: GRM155B11A104K P-board P N Parasitic element C Transistor (NPN) B N E GND P N P P N , Rev. 003 BD8316GWL Pin Description Datasheet C B A 1 2 3 4 Fig.2 Pin assignment (Bottom view) Pin No. A-1 A-2 A-3 A-4 B-1 B-3 B-4 C-1 C-2 C-3 C-4 Pin Name VDD HS2L LX2 GND LX1 , -50 -50 3.7 3.7 1.2 1.2 -1 -1 -1 1.5 -0.3 500 - MAX 2.35 150 1.76 90 90 -5.928 12.5 0.808 50 50 4.7 , -0Q1Q0AJ00170-1-2 2012.08.03 Rev. 003 BD8316GWL Typical Performance Characteristic (Unless otherwise specified, Ta = 25°C
ROHM
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GRM21BB31A GRM155B11A104K INV21 555 for boost converter GRM21BB31A475K GRM155B11A104

carrier chiller

Abstract: CM23 P.O. Box 5928 Greenville, SC 29606 Phone (864) 963-6300 Fax (864) 963-66521 www.kemet.com , of the board are the resisttor chips, ceramic capacitor chips, and SOT transistor packages , "Surface Mount - Mounting Pad Dimensions and Considerations" F2100. C. Circuit Pad Orientation: For the , material has a glass transition temperature (approximately 125°C) nearer the preheat and wave solder , solutions, making removal very difficult. 5 C. Cleaning methods and materials: A recent trend in the
KEMET
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F-2101 carrier chiller CM23 F-2105 sot transistor F2105A

Mn2O3

Abstract: Ta2O5 by John D. Prymak KEMET Electronics Corp. P. O. Box 5928 Greenville , same time as the invention of the transistor, in the same Bell Laboratories in 1948. It has grown in , pellets are then sintered in a vacuum at temperatures approaching 2,000°C, to expand the bond areas of , material dramatically. Typically this conversion process takes place at a temperature range of 400°C to 480°C. The cathode plate in a solid tantalum capacitor is created by a successive series if dip and
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Mn2O3 Ta2O5 MnO2

RETICON photodiode array 512

Abstract: AMPLI DUAL CV 60 forward diode voltage drop at 25°C is 592.8 mV. The equation for computing junction temperature from the , Aperture Response Function N-1 N N+1 2.5 mm A C C 25 µm 50 µm A 19 µm 44 µm B 6 µm 6 , Sensor Characteristics (contd.) Table 1. Electrical Characteristics (25° C) Interference effects in , . The dark current of an L-series sensor at 25°C is typically 0.2 pA for the 25 µm models or 0.4 pA for the 50 µm, doubling for every 7°C increase in temperature. See Table 2 for detailed
PerkinElmer Optoelectronics
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RL1201LGQ-711 RL1202LGQ-711 RL1205LGQ-711 RL1210LGQ-711 RL1502LFQ-711 RL1505LFQ-711 RETICON photodiode array 512 AMPLI DUAL CV 60 reticon photodiode array RETICON Reticon photodiode array 1024 pixel RL1501LFQ-711

RETICON photodiode array 512

Abstract: RL1202LGQ-711 shown in Figure 5. The forward diode voltage drop at 25°C is 592.8 mV. The equation for computing , Figure 2. Sensor Geometry and Aperture Response Function N-1 N N+1 2.5 mm A C 25 µm 50 µm A 19 µm 44 µm B 6 µm 6 µm B C Silicon Dioxide N-Silicon 0.5 mm Response The , µm models. The dark current of an L-series sensor at 25°C is typically 0.2 pA for the 25 µm models or 0.4 pA for the 50 µm, doubling for every 7°C increase in temperature. See Table 2 for detailed
PerkinElmer Optoelectronics
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DSP-106 RETICON TB series sensors RETICON 128 photodiode 256 elements silicon RETICON 128 application notes RETICON 256 application notes RL1201 800-775-OPTO D-65199 10/2001W

nec 16312

Abstract: ha 13463 PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA828TF HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR (WITH BUILT-IN 6-PIN 2 x 2SC5184) THIN-TYPE SMALL MINI MOLD FEATURES , perforation side of the tape. o C O ^ J3 " n - iI & _i_ i H- 1 J _ 1 ' i in dl i -r 1 1 _ _ C M QO ! I C D 1 _ I - co Remark If you require an evaluation sample, please contact an , MAXIMUM RATINGS (T a = 25°C) Parameter Collector to Base Voltage Collector to Emitter Voltage Em itter to
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nec 16312 ha 13463 SN 16880 8377 om 7082 B ic audio amplifier nec 8039
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