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Part Manufacturer Description Datasheet BUY
LTC1177CSW Linear Technology IC BUF OR INV BASED MOSFET DRIVER, PDSO18, 0.300 INCH, PLASTIC, SO-18, MOSFET Driver visit Linear Technology - Now Part of Analog Devices
LTC1177CSW-5 Linear Technology IC 0.62 A BUF OR INV BASED MOSFET DRIVER, PDSO28, 0.300 INCH, PLASTIC, SOP-28, MOSFET Driver visit Linear Technology - Now Part of Analog Devices
LTC1177ISW-12 Linear Technology IC 0.62 A BUF OR INV BASED MOSFET DRIVER, PDSO28, 0.300 INCH, PLASTIC, SOP-28, MOSFET Driver visit Linear Technology - Now Part of Analog Devices
LTC1177CSW-12 Linear Technology IC 0.62 A BUF OR INV BASED MOSFET DRIVER, PDSO28, 0.300 INCH, PLASTIC, SOP-28, MOSFET Driver visit Linear Technology - Now Part of Analog Devices
LTC1177CN-12 Linear Technology IC 0.62 A BUF OR INV BASED MOSFET DRIVER, PDIP18, 0.300 INCH, PLASTIC, DIP-18, MOSFET Driver visit Linear Technology - Now Part of Analog Devices
LTC1177IN-5 Linear Technology IC 0.62 A BUF OR INV BASED MOSFET DRIVER, PDIP18, 0.300 INCH, PLASTIC, DIP-18, MOSFET Driver visit Linear Technology - Now Part of Analog Devices

TRANSISTOR C 1177

Catalog Datasheet MFG & Type PDF Document Tags

TRANSISTOR C 1177

Abstract: and reduced wafer costs. The transistor layout rules themselves are not â¼ A L C A , : -55°C to 125°C â'¢ Pow er Supply (operation): 4 .5 - 15 V digital 4 .5 - 18 - 4 0 V analog 100 V , : -55°C to + 125°C Operation of digital and analog functions at low supply voltage (e.g. 3V) is , (V ^ + 0 .5 V) Storage Temperature (Ceramic): -65°C to 150°C Note: Stresses above those listed , , which contains all the information necessary to design a circuit. C t w ill be determined by the
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darlington NPN 600V 12a transistor

Abstract: darlington NPN 600V 20a transistor DATA SHEET MJ10023 NPN SILICON POWER DARLINGTON TRANSISTOR JEDEC TO-3 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR MJ10023 is a Silicon NPN Power Darlington Transistor, mounted in a , (TA=25°C unless otherwise noted) SYMBOL VCEO VCEV VEBO IC ICM IB IBM PD Collector-Emitter , Current Peak Base Current Power Dissipation (TC=25°C) Operating and Storage Junction Temperature TJ , -65 to +200 °C 0.7 °C/W ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted
Central Semiconductor
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darlington NPN 600V 12a transistor darlington NPN 600V 20a transistor NPN 600V transistor darlington NPN 600V transistor application MJ10023 NPN Transistor 600V

transistor 0440

Abstract: TRANSISTOR C 1177 MJ3028 (SILICON) VERTICAL OUTPUT HIGH-VOLTAGE NPN SILICON TRANSISTOR . . . designed for use in , ° color television receivers. 3.5 AMPERES POWER TRANSISTOR NPN SILICON 700 VOLTS 100 WATTS MAXIMUM , 1.0 Ade Total Device Dissipation @Tc - 25°C "D 100 Watts Derate above 25°C 0.8 W/°C Operating , (Tq - 25°C unless otherwise noted) I Chilli ink. | Symbol j Mln J Mm* | Unit | OFF CHARACTERISTICS , 39.37 1.550 B - 21.08 - 0.830 C 6.36 7.62 0.250 0.300 D 0.99 1.09 0.039 0.043 E - 3.43 - 0.135 F
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transistor 0440 TRANSISTOR C 1177 HFG TRANSISTOR AN-415

MJ3430

Abstract: MJ3480 MJ3430 (SILICON) HIGH VOLTAGE NPN SILICON TRANSISTOR . . . designed for use in high-voltage , Collector-Emitter Saturation Voltage - VCE(sat) - 0.9 Vdc (Max) @> le - 2.5 Adc 5.0 AMPERE POWER TRANSISTOR NPN , '" Continuous ic 5.0 Adc Base Current IB 2.0 Adc Total Device Oissipetion # Tc - 25°C Derate above 2S°C I'D , , Junction to Case 9JC 1.0 °c/w ELECTRICAL CHARACTERISTICS t/c 3 25°C unless otherwise noted , Collector Cutoff Current (VCE » 400 Vdc. VEB(off) " 1 5 Vdc) (VCE - 400 Vdc, VEB(off) - ' -5 Vdc, TC - 125°C
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MJ3480 transistor tl 430 c 2SC 1177 AN-4151 BUI08

TRANSISTOR C 1177

Abstract: transistor 813 Adc Base Current >B 80 mAdc Total Device Dissipation @TC - 25°C Derate above 25°C {Equal power in both transistors) PDT 85 0.485 Watts W/°C Single Transistor Dissipation @Tc = 25°C Derate above 25°C PD 60 0.343 Watts WI°C Operating and Storage Junction Temperature Range TJ.Tstg -65°C to +200°C , Single Transistor Effective, equal power both transistors 6 JC 2.92 2.06 °C/W Thermal Coupling Factor , irillll^^kiHWIHII:« IMHEIXIHmHEia A - 38.61 - 1.520 B 21.08 - 0.830 C 6 35 8.13 0.250 0.320 D 0.97 1.09
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MJ4200 MJ4201 MJ4210 MJ4211 transistor 813 2108 npn transistor MJ42U MJ42I0

BUX82

Abstract: transistor 800V 1A ) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44) 1 HIGH CURRENT HIGH SPEED HIGH POWER SILICON NPN PLANAR TRANSISTOR 3 (case) Applications 3.84 (0.151) 4.09 (0.161) The BUX82 is an epitaxial silicon NPN planar transistor that has , oscillators. ABSOLUTE MAXIMUM RATINGS (Tj = 25°C unless otherwise stated) VCESM Collector ­ Emitter , Dissipation Tmb = 50°C TSTG Storage Temperature Range TJ Maximum Junction Temperature Semelab
Semelab
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transistor 800V 1A 204AA

150w darlington transistor to3 package

Abstract: TRANSISTOR C 1177 TRANSISTOR MJ4035 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Symbols Parameters , SILICON DARLINGTON NPN TRANSISTOR MJ4035 · Monolithic Darlington Configuration With , ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO VCEO VEBO IC IB PD TJ Tstg , Base Current TC = 25°C Total Power Dissipation at Derate Above 25°C Junction Temperature Range Storage Temperature Range 100V 100V 5V 16A 0.5A 150W 0.86W/°C -65 to +200°C -65 to +200°C
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150w darlington transistor to3 package LE17
Abstract: TRANSISTOR MJ4035 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Symbols Parameters , SILICON DARLINGTON NPN TRANSISTOR MJ4035 â'¢ Monolithic Darlington Configuration With , ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO VCEO VEBO IC IB PD TJ Tstg , Current Base Current TC = 25°C Total Power Dissipation at Derate Above 25°C Junction Temperature Range Storage Temperature Range 100V 100V 5V 16A 0.5A 150W 0.86W/°C -65 to +200°C -65 to Semelab
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MJ9000

Abstract: TRANSISTOR 1J5 MJ9000 (SILICON) HIGH-VOLTAGE NPN SILICON TRANSISTOR . . . designed for single unit use in , CHARACTERISTICS (Tc " 26°C untas otharwisa noted) T OFF CHARACTERISTICS (1)>ulwTwt; Pub* WMth £ BOO (la, Outy , Device Dissipation â'¢ Tc - 26"C ^D 125 Watts Derate abo» 26°C 1.0 W/°C Operating and Storage , Max Unit Thermal Resistance. Junction to Caan «JC 1.0 °c/m 10 AMPERE POWER TRANSISTOR NPN SILICON , A 39.37 1.550 B - 21.06 - 0.830 C 6.35 7.62 0.250 0.300 0 0.99 1.09 0:039 0.043 E - 3.43 -
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TRANSISTOR 1J5 1118 R Transistor witching transformer TRANSISTOR D 471 k 4110 25068782A01

MJ413

Abstract: MJ431 SILICON TRANSISTOR . designed for high-current switching and general purpose amplifier applications. â'¢ Low Saturation Voltage - VcE(sat) " 1 0 Vdc @ , Collector Current - Continuous ic 30 Adc Ban Current 'B 5.0 Adc Total Device Dissipation 9 Tc " 25°C Derate above 25°C PD 150 0.86 Watts W/°C Operating and Storage Junction Temperature Range Tj.Tjtg -65 , 20 VC£, COLLECTOR-EMITTER VOLTAGE (VOLTS) 30 AMPERE POWER TRANSISTOR PNP SILICON 40 VOLTS 150
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MJ431 MJ413 MJ450
Abstract: ) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44) 1 HIGH CURRENT HIGH SPEED HIGH POWER SILICON NPN PLANAR TRANSISTOR 3 (case) Applications 3.84 (0.151) 4.09 (0.161) The BUX82 is an epitaxial silicon NPN planar transistor that has , amplifiers and power oscillators. ABSOLUTE MAXIMUM RATINGS (Tj = 25°C unless otherwise stated) VCESM , (d.c) Ptot Total Power Dissipation Tmb = 50°C TSTG Storage Temperature Range TJ Semelab
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germanium transistor pnp

Abstract: pnp germanium transistor MPI 1 OB (GERMANIUM) PNP GERMANIUM POWER SWITCHING TRANSISTOR . . . designed for high-current , . 25 AMPERE PNP ADE GERMANIUM POWER TRANSISTOR â'¢ Alloy-Diffused Epitaxial Construction â'¢ Low , Voltage V EB 2.0 Vdc Collector Current - Continuous "c 25 Adc Base Current - Continuous 'B 5.0 Adc Total Device Dissipation @TC = 25°C Derate above 25° C PD 106 1.25 Watts W/°C Operating and Storage , MAX A _ 33.37 _ 1.550 « - 21.08 - 0.830 C - 7.62 - 0.300 D 1.22 1.32 0.048 0.052 F - 3.43 -
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germanium transistor pnp pnp germanium transistor germanium Power Transistor pnp germanium low power transistor transistor N 343 AD power germanium transistor pnp

MJ3029

Abstract: MJ3030 5.0 Adc Base Current 'B 1.0 Adc Total Device Dissipation @Tc * 25QC Derate above 25°C I'd , INCHES MIN MAX MIN MAX A 39.37 _ 1.550 e - 21.08 - 0.830 c 6.35 7.62 0.250 0.300 D 0.99 1.09 0.039 0.043 E - 3.43 - 0.136 F 29.90 30.40 1.177 1.197 G 10.67 11.18 0.420 0.440 H 5.33 5.59 0.210 , CASE 11 419 MJ3029, MJ3030 (continued) ELECTRICAL CHARACTERISTICS (Tc - 25°C unless otherwise noted , Time (Vce - 80 Vdc. 1 c - 3.0 Ade, 1Bi - 0.8 Ade) Figur« 3 MJ3030 tf - 1.0 M* ?ul«e T«it: PulM
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250325

MJ1800

Abstract: MJ1 800 (SILICON) HIGH-VOLTAGE NPN SILICON TRANSISTOR . . . designed for use in vertical , â'¢ Excellent Gain Linearity 5 AMPERES POWER TRANSISTOR NPN SILICON 500 VOLTS 100 WATTS MAXIMUM , Dissipation ®Tq " 25°C Derate above 2S°C PD 100 0.8 Watts VW°C Operating and Storage Junction ' , Reslstenca, Junction to Case «JC 1.25 °c/w ELECTRICAL CHARACTERISTICS (Tc - 25°C unless otherwise noted , MIN MAX A 39.37 _ 1.550 B - 21.08 - 0.830 C 6.35 7.62 0.250 0.300 0 0.99 1.09 0.039 0.043 E -
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MJ1800

TRANSISTOR S 813

Abstract: MJ1200 Total Device Dissipation @Tq = 25°C Derate above 25°C (Equal power in both transistors) PD 160 0.91 Watts W/°C Single Transistor Dissipation @ Tç - 25°C Derate above 25°C PD 120 0.68 Watts W/° C , Characteristic Symbol Max Unit Thermal Resistance, Junction to Case Single Transistor . Effective, equal power , - 21.08 - 0,830 C 6.35 8.13 0.250 0.320 D 197 1.09 0.036 0.043 E - 3.43 - 0,135 F 29.90 30.40 1.177 1.197 G 11.94 BSC 0.470 BSC K 7.11 1 8.13 0.280 10.320 M 72° BSC 72" BSC N 18° BSC
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MJ920 MJ921 MJ1201NPN MJ1200 MJ1201 TRANSISTOR S 813 MJI200

SUS603

Abstract: panasonic sensor ce dp . (IEC) The DPC-L100 and DPH-L100 can accommodate media at temperatures of up to 125°C (10 MPa and 50 , . Product line System accuracy: ±1 % F.S. (at 23°C) (Throughout operating ambient temperature range: ±2 , . Comparative output DPC-L101 NPN open-collector transistor * CN-66A-C2 (Connector attached cable 2 m 6.562 ft) is attached. DPC-L101-P PNP open-collector transistor Type without connector attached , °C +73.4 ±35 °F) ±2.0 % F.S. (at -20 to 70 °C -4 to +158 °F) (including linearity, hysteresis and
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SUS603 panasonic sensor ce dp sunx dp 80 transistor k 3562 SUS304 SUS630 CN-66A-C5 CE-DPHL100-5

2sc 1177

Abstract: MJ802 MJ4502 MJ4502 (SILICON) HIGH-POWER PNP SILICON TRANSISTOR . . for use as an output device in , - 7.5 A Excellent Safe Operating Area Complement to the NPN MJ802 30 AMPERE POWER TRANSISTOR PNP , Voltaga vEB 4.0 Vdc Collector Currant "C 30 Ade Baia Current â'¢b 7.6 Ade Total Device Dissipation »Tc - 25°C Darata abova 2S°C PD 200 1.14 Watts W/°C Operating and Storaga Junction Temperature Range , INCHES MIN MAX MIN MAX A 39.37 1.550 â Â» - 21.08 - 0.830 c 6.35 7.62 0.250 0.300 0 0.99 1.09
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MJ802 MJ4502 Tra 1120 r 150JC

mj411 transistor

Abstract: MJ410 Device Dissipation @ Tc = 75°C Derate above 75°C PD 100 1.33 Watts W/°C Operating Junction , ELECTRICAL CHARACTERISTICS (Tc - 25°C unless otherwise noted! | Characteristic | Symbol | Min [ Max | Unit , 'CEO - 0.25 0.25 mAdc Collector Cutoff Current IVCE - 200 Vdc, VEe(off) * 1.5 Vdc. MJ410 TC - 125°C) (VCE - 300 Vdc, VEBIoff> -1.5 Vdc, MJ411 TC - 125°C) 'CEX - 0.5 0.5 mAdc emitter Cutoff Current IVEB , 39.37 1.550 B 21.08 - 0.830 C 6.35 7.62 0.250 0.300 D 0.99 1.09 0.039 0.043 E - 3.43 - 0.135 â
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mj411 transistor of IC 4151 MJ411-

2N4915

Abstract: 8302 1 of 3 SILICON EPITAXIAL NPN TRANSISTOR 2N4915 ELECTRICAL CHARACTERISTICS (TC = 25°C unless , SILICON EPITAXIAL NPN TRANSISTOR 2N4915 · Low Collector Saturation Voltage. · Hermetic , · Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated , Emitter ­ Base Voltage Continuous Collector Current Base Current TC = 25°C Total Power Dissipation at Derate Above 25°C Junction Temperature Range Storage Temperature Range 80V 80V 5V 5A 1.0A 87.5W
Semelab
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8302
Abstract: NPN TRANSISTOR BUX10 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Symbols , SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUX10 â'¢ High Current Capability. â'¢ Hermetic , Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO VCEX VCEO VEBO , Collector Current Base Current TC = 25°C Total Power Dissipation at Derate Above 25°C Junction , +200°C -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJC Max. Thermal Semelab
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