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LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

TRANSISTOR BC140

Catalog Datasheet MFG & Type PDF Document Tags

TRANSISTOR BC140

Abstract: TRANSISTOR BC141 ) 435-1110 â'¢ Fax: (631) 435-1824 Manufacturers of World Class Discrete Semiconductors bc140 series bc141 series npn silicon transistor jedec to-39 case DESCRIPTION The CENTRAL SEMICONDUCTOR BC140 and BC141 , applications. MAXIMUM RATINGS (TA=25°C) SYMBOL BC140 BC141 UNITS Collector-Base Voltage vCBO 80 100 V , =1.0a 1.8 v hFE vce=1.0v, Ic=100|JA (bc140-10, bc141-10) 50 100 hFE vce=1.0v, Ic=100|JA (bc140-16, bc141-16) 100 205 hFE VCE=1.0V, lc=100mA (BC140-10, BC141-10) 63 110 160 hFE VCE=1.0V, lc=10QmA (bc140
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BC140-10 BC141-16 TRANSISTOR BC140 TRANSISTOR BC141 bc140 TRANSISTOR bc140-16 Transistor BC140-10 100MH

TRANSISTOR BC140

Abstract: TRANSISTOR pnp BC140 current (max. 1 A) · Low voltage (max. 60 V). BC140; BC141 PINNING PIN 1 2 3 emitter base collector , . DESCRIPTION NPN medium power transistor in a TO-39 metal package. PNP complements: BC160 and BC161. [/ 1 2 , BC140 BC141 collector-emitter voltage BC140 BC141 peak collector current total power dissipation DC current gain BC140-10; BC141-10 BC140-I6; BC141-16 transition frequency open base CONDITIONS open , (IEC 134). BC140; BC141 SYMBOL VCBO BC140 BC141 VCEO PARAMETER collector-base voltage
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TRANSISTOR pnp BC140 TRANSISTOR BC140 npn transistor bc140 DC bc141 transistor AW100 IC BC140

TRANSISTOR BC140

Abstract: TRANSISTOR pnp BC140 DISCRETE SEMICONDUCTORS DATA SHEET M3D110 BC140; BC141 NPN medium power transistors , May 12 Philips Semiconductors Product specification NPN medium power transistors BC140 , transistor in a TO-39 metal package. PNP complements: BC160 and BC161. 2 3 1 MAM317 Fig , V BC140 - - 40 V BC141 - - 60 V - - 1.5 A - - 3.7 W BC140-10; BC141-10 63 100 160 BC140-16; BC141-16 100 160 250 50 -
Philips Semiconductors
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BC141 philips BC140 equivalent BC141 equivalent SCA54

transistor BC 153

Abstract: TRANSISTOR BC 141 indication of the current amplification group desired, a transistor of a current amplification group Just , mA; JB1 approx. -/B2 approx. 5 mA) ton toff , dissipation versus temperature P»t = ' IT). Rih = parameter W BC140 k piot 1 Unr»0'tO 7V , \ \ 100 100 ZOO'O Permissible pulse load K rtt,jc = I (l); v = parameter W BC140, BC141 10 s- 10-zL_liiiMLll IO"1 10"5 10"* 10"3 IO"2 10"1 10°s Ve io3 5 IO2 5 Transition frequency h = f (jy Vce-WV BC140
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Q60203-X140 Q60203-X140-V10 Q60203-X140-P Q62702-C234 Q62702-C236 BCY41 transistor BC 153 TRANSISTOR BC 141 BC transistor series transistor BC SERIES transistor BC 310 0Q04104 BC1401 Q60203-X140-V6 Q60203-X140-V16

transistor BC 153

Abstract: transistor C719 current amplification group desired, a transistor of a current amplification group Just available from , , temperature P u t* HT). Rih = parameter /'tot Permissible pulse load K ru,jc = f(0;v=param eter W BC140 , BC140, BC141 ^ C E s a t Collector cutoff currant versus temperature /cB o = nra m b );VC B o= eov HA BC140, BC141 MHZ Transition frequency fy = f (/c) (V ce = 10 V) BC140. BC14T 'T a n k
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62702-C228-S2 62702-C236 transistor C719 TRANSISTOR C236 TRANSISTOR BC 140 transistor BC 153 a c236 transistor transistor bc 100 0Q043 60203-X 60203-X140-V6 60203-X140-P 140/BC160

TRANSISTOR BC140

Abstract: BC140-16 Technical Data TRANSISTOR maximum ratings Voltage, Collector to Base (VCBO) 60.0 V NO. BC140-16 Voltage, Collector to Emitter (VCE) 40.0 V TYPE NPN Voltage, Emitter to Base (VEBO) 7.0 V empty empty Collector Current (IC) 1.0 A empty empty Base Current (IB) 0.1 A CASE TO-39 Max. Power Dissipation (PT) at TC = 25 °C 4.0 W , . value / pulse-tested tp300µs, duty cycle 2% (3)typical value empty BC140-16 Marking Customer
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EQUIVALENT TRANSISTOR bc109c

Abstract: TRANSISTOR pnp BC140 -18 BC108C 2N3117 NPN TO-18 BC109 2 N2484 NPN TO-18 BC109B 2N930 NPN TO-18 BC109C 2N3117 NPN TO-18 BC140 2N3019 NPN TO-39 BC140-6 2N3019 NPN TO-39 BC140-10 2N3019 NPN TO-39 BC140-16 2N3019 NPN TO-39 BC141 , -18 BFX29 2 N 2904A . ?NP TO-39 3-16 EgAVTHEONj Discrete Devices Beam Lead Chips Transistor Chips
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2N328A 2N1025 2N1026 2N2280 2N2484 EQUIVALENT TRANSISTOR bc109c EQUIVALENT TRANSISTOR bc108 bcy31 BC177 pnp transistor 2N327A 2N327B 2N328B 2N329A 2N329B

EQUIVALENT TRANSISTOR bc109c

Abstract: equivalent transistor 2N1711 -18 BC108C 2N3117 NPN TO-18 BC109 2 N2484 NPN TO-18 BC109B 2N930 NPN TO-18 BC109C 2N3117 NPN TO-18 BC140 2N3019 NPN TO-39 BC140-6 2N3019 NPN TO-39 BC140-10 2N3019 NPN TO-39 BC140-16 2N3019 NPN TO-39 BC141 , Dual-in-line Quad TO-86 Flat Pack 3-17 Discrete Devices Beam Lead Chips Transistor Chips 100% Probed
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equivalent transistor 2N1711 Transistor BC107 motorola bc109 Transistor Equivalent list Transistor BC107b motorola transistor bc107b equivalent TO-89 2N760 2N760A 2N929 2N929A 2N930A 2N930B

TRANSISTOR BC 137

Abstract: TRANSISTOR BD 338 1 > double transistor * TO-71 +SO T143 BCV27/47 PM BTA13/14 Small-signal transistors PRO DUCT , -39 TO-92 BC635 BC637 BC639 BC368 BC140/141 BFX85 BFY50-52 BSX45-47 2N1711 2N 1893 T O -126 BD135 BD 137 , M PS6534/6535 MPSA55/56 DARLING TO NS BC516 MPSA63/64 M PSA76/77 BSS68 1) double transistor t t SC70
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2PC1815 PXTA14 2PA1015 BD136 TRANSISTOR BC 137 TRANSISTOR BD 338 transistor BD 141 TRANSISTOR 328 SOT89 BC107/108 BCY58/59 2N2483/2484 BC546/547 BCX58 JC500/501

BC160

Abstract: BC161 Philips Semiconductors Product specification PNP medium power transistors FEATURES · High current (max. 1 A) · Low voltage (max. 60 V). APPLICATIONS · General purpose applications. DESCRIPTION PNP medium power transistor in a TO-39 metal package. NPN complements: BC140 and BC141. PINNING PIN 1 2 3 emitter base BC160; BC161 DESCRIPTION collector, connected to case QUICK REFERENCE DATA SYMBOL VcBO PARAMETER collector-base voltage BC160 BC161 collector-emitter voltage BC160 BC161 peak
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BC161-10 BC160-16 transistor bc160 BC160 TRANSISTOR bc160-10 BC161 transistor BC160-10 BC161-16

transistor BC 157

Abstract: TRANSISTOR BC 181 160-6 BC 160-10 BC 160-16 BC 160 paired BC 160/BC140 paired BC 161 BC 161-6 BC 161-10 BC 161-16 BC 161 , indication of the current amplification group desired, a transistor of a current amplification group just , mA) ton toff
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transistor BC 157 TRANSISTOR BC 181 BC181 transistor 2sc 1586 TRANSISTOR BC 650 c TRANSISTOR "BC 157" 160/BC140 BC161/BC141 Q62702-C228 Q62702-C228-V6 Q62702-C228-V10 Q62702-C228-V16

TRANSISTOR BC 157

Abstract: BC181 Q62702-C228-P BC 160/BC140 paired Q62702-C228-S2 BC1611> Q62702-C252 BC 161-6 Q62702-C230 BC 161-10 , amplification group desired, a transistor of a current amplification group just available from stock will be , mA) 'on 'off
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transistor BC 55 f15n transistor bc 102 BC180 Bc 140 transistor Scans-007431 Q62702-C231 Q62702-C239 Q62702-C230-P Q62702-C230-S2 S20V-30V Q0Q4111

AT3904

Abstract: raytheon transistor 7^-27-9^ Raytheon Transistor Dice Catalog i RAYTHEON/ SEMICONDUCTOR 27E D â  TSTVBbO 0007370 1 â , / SEMICONDUCTOR S7E D â  TS^tiD 0QQ7371 3 â  Raytheon Transistor Product Selection Guide Dici Model Polarity , 300 CG NPN General purpose amplifier, high current applications AT3019/3700 AT2102 BC140. BC141 100 , doped silicon epitaxial transistor high speed switching applications up to 100mA AT2369A, AT2368. AT706A , 90 500 150 GK PNP Platinum doped transistor, 'useful for high current high speed applications AT3467
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AT3904 raytheon transistor AT3866A AT915 Raytheon AT3906 transistor eb 2030 AT4208 AT4209 AT2894A AT5771 AT3639 AT3640

TRANSISTOR BC 448 smd

Abstract: transistor MPSA77 transistors Transistor arrays Medium-power transistors Power transistors Resistor-equipped transistors & arrays Transistors Transistor arrays Switching transistors Low-power transistors Medium-power transistors , LEADED DEVICES (continued) NPN GENERAL PURPOSE TRANSISTOR ARRAYS TYPE NUMBER BCY87 BCY88 BCY89 VCEO max , NUMBER 2N1613 2N1711 2N1893 2N3019 BC140 BC140-10 BC140-16 BC141 BC141-10 BC141-16 BC368 BC368-16 BC368 , 100 100 100 100 50 50 50 50 50 50 50 50 BC140 BC140-10 BC140-16 BC141 BC141-10 BC141-16 BC368 BC368
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2PC945K 2PC945Q BC337 TRANSISTOR BC 448 smd transistor MPSA77 JA101P transistor pn2222 transistor TO-92 bc108 BC853B 2N4124 2N5088 2PC945 2PC945P

993 395 pnp npn

Abstract: bc237 smd sot23 package Low-power transistors 2 5 ­ 23 26 Transistor arrays 7 ­ 29 29 29 , ­ ­ ­ Power transistors Resistor-equipped transistors & arrays Transistors Transistor , GENERAL PURPOSE TRANSISTOR ARRAYS TYPE NUMBER PACKAGE VCEO max. (V) IC max. (mA) Ptot , 300 100 ­ ­ 146 BC140 TO-39 40 1000 3700 63 250 50 ­ BC160 225 BC140-10 TO-39 40 1000 3700 63 160 50 ­ BC160-10 225 BC140
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993 395 pnp npn bc237 smd sot23 package TRANSISTOR BC337 SMD 702 TRANSISTOR smd SOT23 2PB601AQ BC548 TRANSISTOR SMD BF622 BF721 BF720 BF723 BF722 BSP15

TRANSistor BC108

Abstract: 2n4001 TRANSISTOR 10 150 10 300 TO-18 ZT82 BC160 40 40 1000 1.0 1000 100 40 250 100 50 50 3700* TO-39 BC140 BCY78 32 , SWITCHING TRANSISTOR SELECTOR CHART Devices listed are NPN except where marked with * which signifies PNP
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2N3053 2N696 2N1131 2N697 2N1132 BFY51 TRANSistor BC108 2n4001 TRANSISTOR Transistor BCY58 2N40361 applications of Transistor BC108 Transistor BC177 2N4037

TRANSISTOR BC140

Abstract: applications of Transistor BC108 75 260 10 150 10 300 TO-18 ZT82 BC160 40 40 1000 1.0 1000 100 40 250 100 50 50 3700* TO-39 BC140 , -18 BC109 "Typical MC9 ELECTRICAL CHARACTERISTICS (a) TRANSISTOR ELECTRICAL CHARACTERISTICS P.N.P
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ZT211 2N4036 2N2102 ZT189 BCY77 BCY65E BC558C Transistor BC212A 2N2605 ZT90/95

transistor bsw 67

Abstract: transistor BD139 PH 71 P hilip s Semiconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS GENERAL-PURPOSE LOW-FREQUENCY BIPOLAR TRANSISTORS ratings type num ber VCEO max. (V) 'c max. (mA) P,o. max. (mW) hpE @ min./max. ' c^ ce Small-signal transistors LEADED TYPES package characteristics VCEsat. ® max. (V) (mA/mA) fT typ. (MHz) (mA/V) NPN BC107 BC10B BC140 , transistor 4) \j _ »wo 4-9
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BC547 BC548 BCY883 BD825 transistor bsw 67 transistor BD139 PH 71 BSR512 BSW 68 transistor BC337A BC338 BC517 BC546

2N4036

Abstract: TRANSISTOR BC140 * TO-39 BC161 BC140 80 40 1000 1.0 1000 100 40 250 100 50 50 3700* TO-39 BC160 BFY50 80 35 1000 0.2 , 1000 1.0 1000 100 40 250 100 50 50 3700* TO-39 BC140 BCY78 32 32 200 0.25 10 0.25 120 630 2 180| 10 , TO-18 - "Typical MC7 PLANAR SWITCHING PLANAR SWITCHING TRANSISTOR SELECTOR CHART Devices listed
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2N918 2N2708 2N3866 2N4427 BUY90 transistor 2N2219 high voltage transistor to-39 BC177 NPN transistor transistor 2n2218 bc107 transistor 2N2405 BUY82 BUY81

BC161

Abstract: BC160-16 purpose applications. DESCRIPTION 1 handbook, halfpage 3 2 PNP medium power transistor in a TO-39 metal package. NPN complements: BC140 and BC141. 2 3 1 MAM334 Fig.1 Simplified
Philips Semiconductors
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BC161-16 Philips bc160-40
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