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ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
EL5175IY Intersil Corporation LINE RECEIVER, PDSO8, MO-187, MSOP-8 visit Intersil
EL8203IY-T13 Intersil Corporation 1 CHANNEL, VIDEO AMPLIFIER, PDSO8, MO-187, MSOP-8 visit Intersil

TRANSISTOR BC 187

Catalog Datasheet MFG & Type PDF Document Tags

Bc 140 transistor

Abstract: TRANSISTOR BC 141 NPN SILICON TRANSISTOR BC 140 TRANSISTOR NPN SILICIUM gQ >| Compl. of BC 160 and BC 161 - Switching and amplifier Commutation et amplification "CEO "21E i 40 V (60 V BC 140 BC 141 1 A 40 . , indications contraires! BC 140 BC 141 Collector-base voltage Tension coltectevr-base vcb0 80 100 V , 175 °C 76 - 07 1/6 307 BC 140, BC 141 STATIC CHARACTERISTICS t ,_-25°C (Unless otherwise statec , ° v(br)ces BC 140 80 \ BC 141 100 Collector-emitter breakdown voltage Tantion de claquage
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TRANSISTOR BC 187

Abstract: on TRANSISTOR BC 187 PNP SILICON TRANSISTOR TRANSISTOR PNP SILICIUM BC 160 BC 161 Compi, of BC 140 and BC 141 - Switching and amplifier Commutation et amplification i â'"40 V BC 160 VCEO I â'"60 V BC 161 "c -1 A , (Unless otherwise stated) VALEURS LIMITES ABSOLUES D'UTILISATION amb ISeufindicetionscontreiresl BC 160 BC 161 Collector-base voltage Tension coiiecteur-bese VCBO -40 -60 V Collector-emitter voltage , â ss® 76 - 07 1/6 313 BC 160, BC 161 STATIC CHARACTERISTICS J u=25°C (Unless otherwise stated
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TRANSISTOR BC 208

Abstract: TRANSISTOR BC 158 10 BC 187 P TO-18 300 100 25 100 500 2 5 0.5 50 150+ 3.5+ 10 BC 190 N TO-18 300 100 64 125 500 « 2 , °> max (V) â c (mA) BC 107 N TO-18 300 100 45 110 450 â'¢ 2 5 0.6 100 150 6 10 BC 108 N TO-18 300 100 20 110 800 t 2 5 0.6 100 150 6 10 BC 109 N TO-18 300 100 20 110 800 t 2 5 0.6 100 150 6 4 BC 110 N TO-18 300 50 80 30 â'" 2 5 0.6 50 100+ 5 â'" BC 113 N TO-106 200 50 25 200 1000 1 5 0.35 1 60 4 3 BC 114 N TO-106 200 50 25 200 1000 1 5 0.35 1 70 4 3 BC 132 N TO-106 200 50 25 60 300 1 10 0.35 1 40
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transistor eft 323

Abstract: EFT 323 ZF-Spule L5/6 M-ZF-Spule L9 FH-ZF-Spule L8 FU-ZF-Spule L12 FH-ZF-Spule L13 3573-092-1 Transistor BC 528 Or. II Transistor AC 180 K Transistorpaar AC 180 K/181 K Blko 4700 uF, 25 V Ferritkern UKW ROÍ a 4x0 , Transistor BC 108 C entspricht 100 kOhm 2-1-25H1-665 TGL wird vom Zentrallager Erfurt 9100 der Typ BC 149 C , V geändert in 323 u BC 108 A geändert in TBC 108 A BC 108 C geändert in TBC 108 C Äquivalente , spricht TNM 100 Das Importlager in Potsdam liefert statt des Transistors T 413 C den Typ BC 109 C oder BC
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transistor eft 323 EFT 323 transistor BC-108 6001-015 service-mitteilungen EFT323 3792-OOI-I 459I-O75 57OO9OO

TRANSISTOR BI 187

Abstract: sot-23 npn marking code cr .2/1449.0888 E 2708 Eâ'"01 187 TELEFUNKEN ELECTRONIC BUV 71 17E D Bi fi^EQD^b 000^572 E T-33-13 i _ ! , the order number. Example: Order-No. of Type BC 238 C DU Code for TO-92 Transistors 06 ¡Z Orientation of transistor on tape11 Additional marking for specials51 â'¢I 06 Â«â  View on flat side of transistor, view on gummed tape 05 = View on round side of transistor, view on gummed tape S) Additional , . Marking for orientation of transistor not necessary, because box can be opened on top or botton. Example
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BUV71 T0126 TRANSISTOR BI 187 sot-23 npn marking code cr TRANSISTOR BC 187 TRANSISTOR BI 237 bc 187 npn transistor IAL66 15A3DIN

BEL 100N TRANSISTOR

Abstract: bel 187 transistor Package PNP OUTPUT TRANSISTOR 79 BC 369 20 25 5 85/375 500 1 2000 1000 .1 .5 60 â'" â'" â'" TO 237 NPN LOW VOLTAGE OUTPUT TRANSISTOR 80 BEL 187 15 25 5 100/300 300 1 1000 600 .1 5 250 â'" â'" â'" TO 92 PNP LOW VOLTAGE OUTPUT TRANSISTOR 81 BEL 188 15 25 5 100/300 300 1 1000 600 .1 .5 250 â'" â'" â'" TO 92 NPN AUDIO OUTPUT TRANSISTOR 82 BEL 100N 50 60 6 50/280 150 1 1000 1000 .1 .5 130 â'" â'" â'" TO 237 PNP AUDIO OUTPUT TRANSISTOR 83 BEL 100P 50 60 6 50/280 150
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BEL 100N TRANSISTOR bel 187 transistor PN3904 bel 188 transistor bel 187 transistor npn bel 187

BEL 100N TRANSISTOR

Abstract: bel 187 transistor Package PNP OUTPUT TRANSISTOR 79 BC 369 20 25 5 85/375 500 1 2000 1000 .1 .5 60 â'" â'" â'" TO 237 NPN LOW VOLTAGE OUTPUT TRANSISTOR 80 BEL 187 15 25 5 100/300 300 1 1000 600 .1 5 250 â'" â'" â'" TO 92 PNP LOW VOLTAGE OUTPUT TRANSISTOR 81 BEL 188 15 25 5 100/300 300 1 1000 600 .1 .5 250 â'" â'" â'" TO 92 NPN AUDIO OUTPUT TRANSISTOR 82 BEL 100N 50 60 6 50/280 150 1 1000 1000 .1 .5 130 â'" â'" â'" TO 237 PNP AUDIO OUTPUT TRANSISTOR 83 BEL 100P 50 60 6 50/280 150
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BEL 100p transistor bel 187 NPN TRANSISTOR transistor BEL 187 transistor bf 198 bel 100n transistor npn bel 188 transistor pnp

bc 104 npn transistor

Abstract: Marking BH SOT89 Central BCX54 BCX55 BCX56 TM Semiconductor Corp. SURFACE MOUNT NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BCX54, BCX55, and BCX56 types are NPN Silicon , . SURFACE MOUNT NPN SILICON TRANSISTOR SOT-89 CASE - MECHANICAL OUTLINE BOTTOM VIEW LEAD CODE: 1) EMITTER 2) COLLECTOR 3) BASE DEVICE MARKING CODE BCX54 BA BCX54-10 BC BCX54 , ° C 0.014 0.018 0.35 0.46 D 0.173 0.185 4.40 4.70 E 0.064 0.074 1.62 1.87 F 0.146 0.177 3.70
Central Semiconductor
Original
bc 104 npn transistor Marking BH SOT89 Marking BA SOT89 MARKING BL SOT89 sot-89 MARKING CODE Ba on BC 187 TRANSISTOR BCX55-10 BCX56-10 BCX54-16 BCX55-16 BCX56-16 100MH

BD 440 NPN transistors

Abstract: sot89 marking BH BCX54 BCX55 BCX56 SURFACE MOUNT NPN SILICON TRANSISTOR CentralTM semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR BCX54, BCX55, and BCX56 types are NPN Silicon Transistors manufactured , BCX55 b cx56 SURFACE MOUNT NPN SILICON TRANSISTOR SOT-89 CASE - MECHANICAL OUTLINE 3) BASE DEVICE BCX54 BCX54-10 BCX54-16 BCX55 BCX55-10 BCX55-16 BCX56 BCX56-10 BCX56-16 MARKING CODE BA BC BD BE BG BM , 1.40 1.70 4° 4° 0.016 0.018 0.40 0.46 0.173 0.185 4.40 4.70 0.070 0.074 1.79 1.87 0.146 0.177 3.70 4.50
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BD 440 NPN transistors sot89 marking BH BA SOT-89 on TRANSISTOR BC 187 BCX54,115 transistor marking code HF CP305

TRANSISTOR BC 187

Abstract: Marking BA SOT89 BCX54 BCX55 BCX56 SURFACE MOUNT NPN SILICON TRANSISTOR CentralTM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR BCX54, BCX55, and BCX56 types are NPN Silicon Transistors , BCX54 BCX55 BCX56 SURFACE MOUNT NPN SILICON TRANSISTOR 2) COLLECTOR 3) BASE DEVICE BCX54 BCX54-10 BCX54-16 BCX55 BCX55-10 BCX55-16 BCX56 BCX56-10 BCX56-16 MARKING CODE BA BC BD BE BG BM BH BK BL , 0.067 1.40 1.70 4° 4° 0.016 0.018 0.40 0.46 0.173 0.185 4.40 4.70 0.070 0.074 1.79 1.87 0.146 0.177 3.70
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BC 187 TRANSISTOR marking bd sot-89

bel187

Abstract: bel 187 transistor PNP OUTPUT TRANSISTOR 79 BC 369 20 25 5 85/375 500 1 2000 1000 .1 .5 60 â'" â'" â'" TO 237 NPN LOW VOLTAGE OUTPUT TRANSISTOR 80 BEL 187 15 25 5 100/300 300 1 1000 600 .1 5 250 â'" â'" â'" TO 92 PNP LOW VOLTAGE OUTPUT TRANSISTOR 81 BEL 188 15 25 5 100/300 300 1 1000 600 .1 .5 250 â'" â'" â'" TO 92 NPN AUDIO OUTPUT TRANSISTOR 82 BEL 100N 50 60 6 50/280 150 1 1000 1000 .1 .5 130 â'" â'" â'" TO 237 PNP AUDIO OUTPUT TRANSISTOR 83 BEL 100P 50 60 6 50/280 150 1 1000 1000 .1 .5 130 â
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bel187 BEL188 BEL100N BF 500 transistor PNP transistor TO-92 BC BEL 100p

BF 331 TRANSISTORS

Abstract: transistor BC 331 of transistor not necessary, because box can be opened on top or bottom Example for order No.: BC 237 , 0005330 2 ALlSG T -sr-sr BFX89 Silicon NPN Epitaxial Planar RF Transistor Applications: General , ms T1.2/584.0484 E1 3623 6-06 187 TELEFUNKEN ELECTRONIC aie d flRSDCHb , order number. Example: BC238C Order-No. of Type Code forTO-92 Transistors Orientation of transistor on tap e1 1 Additional marking for specialsa ) ') 06 * View on flat side of transistor, view on gummed
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BF 331 TRANSISTORS transistor BC 331 transistor Bf 331 transistor BF 606 BC 331 Transistor transistor marking p-6 569-GS

SOT-89 marking BC

Abstract: TRANSISTOR BC 187 pnp CBCX68 NPN CBCX69 PNP SURFACE MOUNT COMPLEMENTARY SILICON SMALL SIGNAL TRANSISTORS Central DESCRIPTION: Semiconductor Corp. The CENTRAL SEM ICO NDUCTO R CBCX68, C BC X69 types are complementary silicon transistor manufactured by epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring high current capability. MARKING CODE: FULL PART NUMBER SOT-89 CASE , 0.055 0.067 1.40 1.70 4° 4° 0.016 0.018 0.46 0.40 4.70 0.173 0.185 4.40 1.87 0.070 0.074 1.79 0.146
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SOT-89 marking BC TRANSISTOR BC 187 pnp CP314/CP714

ja81

Abstract: TRANSISTOR 2N 4401 +12.0 dBm ±.005 (.1 3) U N LESS OTH ERW ISE SPECIFIED 0.300 ± 0 010 (7 62 + 0 251 · DIA. B.C , -1 7 -2 6 -3 6 -4 6 -5 7 -6 9 -8 5 MAG .314 .207 .187 .188 .187 .183 .174 .154 .123 .106 .182 S22 ANG , Thermal Data: Vcc = 15 Vdc Thermal Resistance 0jc .17TC/W Transistor
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WJ-CA81-1 ja81 TRANSISTOR 2N 4401 612025 WJ-A81-1 A81-1 SMA81-1 J-A81-1 CA81-1

surface mount transistor A40

Abstract: transistor BC 157 0.010 (7.62 ± 0.25) DIA. B.C. -54° to +85°C 500-4000 MHz 12.0 dB +1.0 dB 6.5 dB +13.0 dBm 2.1:1 82 mA , .138 .152 .158 .163 .174 .186 .193 .187 .187 .176 .173 ANG -114 -130 -143 -146 -151 -155 -159 -168 179 , 0 jc .97°C /W Transistor Power Dissipation P d
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surface mount transistor A40 transistor BC 157 WJ-CA40 WJ-A40 SMA40

catalogue des transistors bipolaires de puissance

Abstract: brochage des circuits integres 187 âº2N 706 A 81 2N 1775, A DRT 76 âº2N 2369 187 âº2N 708 87 2N 1776, A DRT 76 âº2N 2369 A , 100_295 *BCT07A TO-18 300 45 125-260 2 0,95 100/5 300 §_297 *BC 107 B TO-18 300 45 240-500 2 0,95 100/5 , page *BC 108 A TO-18 300 20 125-260 2 0,95 100/5 300 S 297 *BC 108 B TO-18 300 20 240-500 2 0,95 100/5 300 § 297 *BC 108 C TO-18 300 20 450-900 2 0,95 100/5 300 § 297 BC 109 B TO-18 300 20 240-500 2 0,95 100/5 300 § 297 BC 109 C TO-18 300 20 450-900 2 0,95 100/5 300 § 297 BC 140 cl.6 TO
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catalogue des transistors bipolaires de puissance brochage des circuits integres H3C1-07 LB 124 transistor equivalente transistor A2222 equivalent of transistor bc212 bc 214 3154-S

WJ A38

Abstract: A38S dB 6.5 dB 7.5 dB 0.300 3:0.010 (7.62 ±0.25) DIA. B.C. GROUND 50-0HM OUTPUT DIMENSIONS ARE IN , .020 .015 .045 .064 .087 .116 .141 .138 .145 .127 .096 .033 .071 .187 .328 ANG -8 3 -1 0 7 -1 5 0 -1 6 , .168 .171 .173 .173 .173 .175 .177 .179 .181 .182 .184 .187 .188 .191 .193 .193 .194 .194 .195 .195 , . 119°C/W Transistor Power Dissipation P d . 0.659 W Junction Temperature Rise
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WJ A38 A38S SMA38 1-800-WJ1-4401

WJA43

Abstract: w-ja43 .300 ± 0.010 «7.62 ± 0.25) - * OIA. B.C. ± 005 ( 13) U N L E S S O TH ERW ISE SPEC IFIED SM A 43 , .135 .148 .156 .162 .163 .167 .170 .175 .182 .184 .187 .191 .187 .172 .154 .132 .101 .071 .060 .087 , . 150°C/W Transistor Power Dissipation .0.193 W Junction Temperature Rise Above
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WJA43 w-ja43 SM 4108 SMA43 1-800-WJ1

Transistor BC 227

Abstract: transistor BC 246 (4.70 ±0.38) 0.300 ±0.010 (7.62 ± 0.25) DIA. B.C. -54° to +85°C 5-1500 M Hz 18.0 dB ±1.0 dB 5.8 dB , 1700.0 S11 MAG .187 .092 .029 .019 .019 .021 .028 .014 .034 .068 .091 .110 .131 .152 .176 .196 .204 .219 , .091 .043 .040 .038 .039 .045 .025 .042 .084 .110 .124 .147 .168 .187 .207 .215 .226 .226 .213 .226 , Transistor Power Dissipation P < j. 0.116 W Junction Temperature Rise Above Case Tjc
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Transistor BC 227 transistor BC 246 TRANSISTOR BC 206 transistor bc 207 re 10019 WJ-A24 SMA24 0D07010

k 2059 TRANSISTOR

Abstract: TRANSISTOR BI 187 SANYO SEMICONDUCTOR CORP 22E D 7=11707^ 000^=133 7 2SC4400 2059 T-3I-/S NPN Epitaxial Planar Silicon Transistor High-Frequency General-Purpose Amp Applications Features . High power gain â'¢ High , ) Ic=10mA,IB: = lmA 0.2 V B-C Time Constant rbb'Co vce = 10V,Ic = 5mA,f= 31.9MHz 23 ps Power Gain PG , \ \ 1 Collector Current,Ic - mA 187 SANYO SEMICONDUCTOR CORP 2SE D â , transistor case outlines are illustrated below. ®A11 dimensions are in mm, and dimensions which are not
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k 2059 TRANSISTOR 2T transistor surface mount pa 2030a 1Ft TRANSISTOR NPN S2e 2SC4400-
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