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TRANSISTOR BC 135

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 150 300 200 300 50 0,25 50/ 5 135 10 BC 635 BC 637 BC 639 BC 636 BC 638 BC 640 800 800 800 45 60 80 , general purpose transistor selector guide â'" plastic case guide de sélection thomson-csf , 0,4.0,6 A 0,8.1 A 20 V BC 238 25 V BC 308 BC 559 BC 338 BC 328 30 V BC 548 ""Bc"5Ã"7f. BC 558 JP -
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transistor Bc 540 BC 540 TRANSISTOR transistor Bc 540 pin Bc 540 transistor B 540 bcw 25 transistor BCW94 BCW90 CB-76
Abstract: *45V BC 414 'c 100 mA h21E , ,135 Input impedance Impédance d'entrée VCE=5V lc = 2 mA f = 1 kHz 11e BC 413 B BC 414 B BC 413 , NPN SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR NPN SILICIUM, PLANAR EPITAXIAL *BC413 BC414 BC 413 and BC 414 are very low noise transistors intended for input stages in audio frequency amplifiers. Le BC 413 et le BC 414 sont des transistors à très faible bruit destinés aux étages d'entrà -
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TRANSISTOR BC 413 414 transistor TRANSISTOR BC 413 npn TRANSISTOR BC 414 transistor c 413 bc 330 transistor
Abstract: PNP Silicon Darlington Transistor BC 516 High current gain q High collector current q Complementary type: BC 517 (NPN) q 2 3 1 Type Marking Ordering Code Pin Configuration 1 2 3 Package1) BC 516 ­ Q62702-C944 C TO-92 B E Maximum Ratings Parameter , NPN Silicon Darlington Transistor BC 517 High current gain q High collector current q , JC 135 mA Thermal Resistance 1) 2) K/W For detailed information see chapter Siemens
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transistor bc 318 TRANSISTOR BC 321 transistor bc 325 bc516 BC517 TRANSISTOR BC
Abstract: ,01, (p = Ci,3ms 135 BC 559 â'¢ BC 560 Min. Typ. Max. Rauschmaà Noise figure - UCE = 5 V, -/c = , BC 559 â'¢ BC 560 Silizium-PNP-Epitaxial-Planar-NF-Transistoren Silicon PNP Epitaxial Planar AF , noise voltage at the input of the transistor Vorläufige technische Daten - Preliminary specifications , stg BC 559 30 30 BC 560 50 45 5 100 200 200 500 150 -65 . +150 V V V mA mA mA mW °C °C 133 BC 559 â'¢ BC 560 'tot 500 mW 400 300 200 100 7414 6 9 tk â'" -â  V -
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transistor B 560 TRANSISTOR BC 136 TRANSISTOR BC 560 BC560 IC 7414 transistor c-133
Abstract: ) (MHz) (pF) TYPE BC 432 P TO-92F 625 0.8 60 63 240* 100 1 0.7 0.5 100+ 17+ BC 431 BC 440 N TO-39 1000 1 40 40 250» 500 4 1 1 50 25 BC 460 BC 441 N TO-39 1000 1 60 40 250» 500 4 1 1 50 25 BC 461 BC 445 N TO-92F 625 0.3 60 50 460» 2 5 0.25 0.1 100 3+ BC 446 BC 446 P TO-92F 625 0.3 60 50 460» 2 5 0.25 0.1 100 3+ BC 445 BC 460 P TO-39 1000 1 40 40 250» 500 4 1 1 50 25 BC 440 BC 461 P TO-39 10CKD 1 60 40 250» 5Ã0 4 1 1 50 25 BC 441 BC 485 N TO-92F 625 1 45 60 400» 100 2 0.5 0.5 200+ 7+ BC -
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TRANSISTOR BC 534 transistor bc 537 TR BC 237 B transistor bc 488 transistor 537 b 360 transistor bc 630 MELF-005 MT-12 S40/S-
Abstract:  BC 413 â'¢ BC 414 Silizium-NPN-Epitaxial-Planar-NF-Transistoren Silicon NPN Epitaxial Planar , the transistor Abmessungen in mm Dimensions In mm Absolute Grenzdaten Absolute maximum ratings , Lagerungstemperaturb'ereich Storage temperature range CBO -CEO U, EBO 'BM tot stg BC 413 45 30 Normgehäuse Case 10 A 3 DIN 41 868 JEDEC TO 92 Z Gewicht â'¢ Weight max. 0,2 g BC 414 50 45 5 100 20 300 150 V V V mA mA mW °C -55 . +150 B 2/V.2. 486/0875 A 97 BC 413 â'¢ BC 414 tot 300 mW 200 100 -
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TFK 101 TFK 902 transistor bc 102 TFK 413 TFK 102 TFK BC
Abstract: Transistors Noise voltage at the transistor input UCE = 5 V' rC = 200 = 2 kQ' / = 10. 50 Hz BC550 O 0,135 , 4W» BC 549 â'¢ BC 550 Silizium-NPN-Epitaxial-Planar-NF-Transistoren Silicon NPN Epitaxial , '¢ Noise figure , Lagerungstemperaturbereich Storage temperature range JCBO -CEO EBO 'CM 'BM tot 'stg BC 549 30 30 Normgehäuse Case 10 A3 DIN 41868 JEDEC TO 92 Z Gewicht â'¢ Weight max. 0,2 g BC 550 50 V 45 V V mA mA mA 5 100 200 -
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transistor BC 549 transistor BC 550 TRANSISTOR BC 550 c TRANSISTOR BC 550 b BC549 BE550
Abstract: BC 517 NPN Silicon Darlington Transistor BC 517 High current gain q High collector current q Complementary type: BC 516 (PNP) q 2 1 1 3 Type Marking Ordering Code Pin Configuration 1 2 3 Package1) BC 517 ­ Q62702-C825 C TO-92 B E , - case2) Rth JC 135 mA Thermal Resistance 1) 2) K/W For detailed , Group 1 5.91 BC 517 Electrical Characteristics at TA = 25 °C, unless otherwise specified Siemens
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transistor bc 517 transistor bc 100 BC 517 c825
Abstract: NPN SILICON TRANSISTOR TRANSISTOR NPN SILICIUM Compi, of BC 556 at 560 bc546*bc 547 *bc 548 bc549. bc 550 Preferred device Dispositif recommandé General purpose bc 546/bc 547/bc 548 Usage général BC 546/BC 547/BC 548 Low noise bc 549/bc 550 Faible bruit BC 549/BC 550 65 V bc 546 The bc 546 is available in A and b groups Le BC 546 est livrable dans les groupes A et B VCEO 45 V 30 V bc , kii = 10-^50 Hz 0,135 4/10 408 BC 546, BC 547, BC 548, BC 549, BC 550 STATIC CHARACTERISTICS -
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Transistor - BC 547, CL 100 bc 104 npn transistor transistor C 548 B bc 408 equivalent BC548BC bc 558 equivalent 546/BC 547/BC 549/BC
Abstract: PNP Silicon Darlington Transistor BC 516 High current gain q High collector current q Complementary type: BC 517 (NPN) q 2 1 3 Type Marking Ordering Code Pin Configuration 1 2 3 Package1) BC 516 ­ Q62702-C944 C TO-92 B E Maximum Ratings Parameter , JC 135 mA Thermal Resistance 1) 2) K/W For detailed information see chapter , BC 516 Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol Siemens
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C944 517 bc
Abstract: IC 107 JC 108 -BC 109 BC107, BC 108, and BC 109 are epitaxial NPN silicon Planartransistors in , » Q62702-C680 BC 107 A Q60203-X107-A BC 107 B Q60203-X107-B BC 1081' Q60203-X108 BC108 A Q60203-X108-A BC 108 B Q60203-X108-B BC 108 C Q60203-X108-C BC 1091) 060203-X109 BC 109 B Q60203-X109-B BC 109 C , BC 107 BC 108 BC109 Collector-emitter voltage Vces 50 30 30 V Collector-emitter voltage Vceo 45 20 , order does not include any exact indication of the current amplification group desired, a transistor of -
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TRANSISTOR BC 137 TRANSISTOR bc107 current gain BC107 characteristic transistor bc 138 transistor BC109 XL08 BC1071 Q60203-X109-C 10ZKH
Abstract: Certified Manufacturer SILICON PLANAR EPITAXIAL TRANSISTORS BC 307, A, B, C BC 308, A, B, C BC 309 , PLANAR EPITAXIAL TRANSISTORS BC 307, A, B, C BC 308, A, B, C BC 309, A, B, C TO-92 Plastic Package , TRANSISTORS BC 307, A, B, C BC 308, A, B, C BC 309, A, B, C TO-92 Plastic Package ELECTRICAL , CHARACTERISTICS fT Transition Frequency BC307 BC308 BC309 f=50MHz BC 309 NF f=1MHz IC , BC 307, A, B, C BC 308, A, B, C BC 309, A, B, C TO-92 Plastic Package TO-92 Plastic Package Continental Device India
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bc 357 transistor datasheet bc 309 b transistor bc 357 transistor BC 114 transistor BC307A bc 357 transistor pin C-120
Abstract: SILICON PLANAR EPITAXIAL TRANSISTORS BC 307, A, B, C BC 308, A, B, C BC 309, A, B, C TO-92 Plastic , BC 307, A, B, C BC 308, A, B, C BC 309, A, B, C TO-92 Plastic Package ELECTRICAL , 0.3 0.7 V V V V V Page 2 of 5 SILICON PLANAR EPITAXIAL TRANSISTORS BC 307, A, B, C BC 308, A, B, C BC 309, A, B, C TO-92 Plastic Package ELECTRICAL CHARACTERISTICS (Ta , Transition Frequency BC307 BC308 BC309 f=50MHz BC 309 NF f=1MHz IC=0.2mA, VCE=5V BC307 Continental Device India
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bc 357 transistor pin details transistor BC 153 BC 170 transistor transistor BC 307 bc 308 transistor pin details CDIL BC307
Abstract: 800 * 2 5 0.6 100 200+ 4.5 10 BC 149 N TO-92F 350 100 20 200 .800 * 2 5 0.6 100 200+ 4.5 10 BC 135 P , °> max (V) â c (mA) BC 107 N TO-18 300 100 45 110 450 â'¢ 2 5 0.6 100 150 6 10 BC 108 N TO-18 300 100 20 110 800 t 2 5 0.6 100 150 6 10 BC 109 N TO-18 300 100 20 110 800 t 2 5 0.6 100 150 6 4 BC 110 N TO-18 300 50 80 30 â'" 2 5 0.6 50 100+ 5 â'" BC 113 N TO-106 200 50 25 200 1000 1 5 0.35 1 60 4 3 BC 114 N TO-106 200 50 25 200 1000 1 5 0.35 1 70 4 3 BC 132 N TO-106 200 50 25 60 300 1 10 0.35 1 40 -
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TRANSISTOR BC 208 TRANSISTOR BC 158 TRANSISTOR BC 157 transistor BC-148 bc 106 transistor transistor BC 209
Abstract: 108 - BC 109 B C 107, BC 108, and BC 109 are epitaxial NPN silicon planar transistors in T 0 18 metal case (18 A 3 DIN 41876). The , input and driver stages. NPN Silicon Transistors Type B C 1 0 7 1) BC 107 A BC 107 B BC 1081) B C 108 A BC 108 B BC 108 C BC 1091> BC 109 B BC 109 C Ordering code Q62702-C680 Q60203-X107-A , Junction to case ftthJA flthJC Vces Vceo V'ebo B C 107 50 45 6 100 200 50 175 300 B C 108 BC 109 V -
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TRANSISTOR BC 109 BC 108 transistor transistor bc 107 NT 101 BC 107 transistor b 108 b 60203-X109
Abstract: SILICON PLANAR EPITAXIAL TRANSISTORS BC 446, A, B BC 448, A, B BC 450, A, B TO-92 Plastic Package , Continental Device India Limited Data Sheet Page 1 of 4 SILICON PLANAR EPITAXIAL TRANSISTORS BC 446, A, B BC 448, A, B BC 450, A, B TO-92 Plastic Package ELECTRICAL CHARACTERISTICS (Ta , India Limited Data Sheet Page 2 of 4 BC 446, A, B BC 448, A, B BC 450, A, B TO-92 Plastic , Transistor and Adhesive Tape Visible 2000 pcs./Ammo Pack All dimensions in mm unless specified otherwise Continental Device India
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BC446 BC448 BC450 TRANSISTOR BC 448 transistors BC 446 TRANSISTOR BC 450 pnp BC 450
Abstract: Certified Manufacturer PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC 446, A, B BC 448, A, B BC 450, A , SILICON PLANAR EPITAXIAL TRANSISTORS BC 446, A, B BC 448, A, B BC 450, A, B TO-92 Plastic Package , %. Continental Device India Limited Data Sheet Page 2 of 4 BC 446, A, B BC 448, A, B BC 450, A, B TO , Transistor and Adhesive Tape Visible 2000 pcs./Ammo Pack All dimensions in mm unless specified otherwise , CARTON BOX Size Qty Gr Wt 17" x 15" x 13.5" 80K 23 kgs 17" x 15" x 13.5" 32K 12.5 kgs Page 3 Continental Device India
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Abstract: Certified Manufacturer SILICON PLANAR EPITAXIAL TRANSISTORS BC 413, B, C BC 414, B, C TO-92 Plastic Package Low Noise Transistors ABSOLUTE MAXIMUM RATINGS ( Ta=25ºC unless specified otherwise) BC 413 , 125 ºC/W Data Sheet Page 1 of 4 SILICON PLANAR EPITAXIAL TRANSISTORS BC 413, B, C BC , 2%. Continental Device India Limited Data Sheet Page 2 of 4 BC 413, B, C BC 414, B, C , 1.982 - 2.082 All diminsions in mm. Flat Side of Transistor and Adhesive Tape Visible 2000 Continental Device India
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BC414C BC413C BC414B BC413B Transistor BC413C bc414 datasheet
Abstract: SIEMENS NPN Silicon Darlington Transistor BC 517 â'¢ High current gain â'¢ High collector current â'¢ Complementary type: BC 516 (PNP) Type Marking Ordering Code P inC onfigur ation 1 2 3 Package1 ) BC 517 - Q62702-C825 C TO-92 B E Maximum Ratings , Junction - case2) /fttlJC £ 135 Thermal Resistance K/W D For detailed information see , 642 flSBSbOS O i a O S E S 1998-11-01 0^3 SIEMENS BC 517 Electrical Characteristics -
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EHP00153 D1SQ52
Abstract: activates the off-hook or the CLID external transistor switch. 6 NC Ring LIM2 19 NC , Digital AIN . . . . . . . . . . . If CLID external transistor switch is enabled, a , . These signals control the off-hook and CLID external transistor switches and is sent to the internal , signal in opposite phase, this pin puts ON the hook switch external Q1/Q2 transistor stage. IDC When D5 input a 5VPP/Fmod signal, this pin puts ON the CLID external Q3/Q4 transistor stage. R2 limits STMicroelectronics
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ST952 TQFP32 ST952TQFP ST75951 BC 547 PIN DIAGRAM IDG 600 STMicroelectronics Krypton pin diagram of BC 547
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