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ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
TIL604HR2 Texas Instruments Photo Transistor, PHOTO TRANSISTOR DETECTOR visit Texas Instruments
HS0-6254RH-Q Intersil Corporation 5 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, DIE-16 visit Intersil

TRANSISTOR BC 135

Catalog Datasheet MFG & Type PDF Document Tags

transistor Bc 540

Abstract: TRANSISTOR BC 135 150 300 200 300 50 0,25 50/ 5 135 10 BC 635 BC 637 BC 639 BC 636 BC 638 BC 640 800 800 800 45 60 80 , general purpose transistor selector guide â'" plastic case guide de sélection thomson-csf , 0,4.0,6 A 0,8.1 A 20 V BC 238 25 V BC 308 BC 559 BC 338 BC 328 30 V BC 548 ""Bc"5Ã"7f. BC 558 JP
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TRANSISTOR BC 413

Abstract: 414 transistor *45V BC 414 'c 100 mA h21E , ,135 Input impedance Impédance d'entrée VCE=5V lc = 2 mA f = 1 kHz 11e BC 413 B BC 414 B BC 413 , NPN SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR NPN SILICIUM, PLANAR EPITAXIAL *BC413 BC414 BC 413 and BC 414 are very low noise transistors intended for input stages in audio frequency amplifiers. Le BC 413 et le BC 414 sont des transistors à très faible bruit destinés aux étages d'entrÃ
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TRANSISTOR BC 413 414 transistor TRANSISTOR BC 413 npn TRANSISTOR BC 414 transistor c 413 bc 330 transistor CB-76

transistor bc 318

Abstract: TRANSISTOR BC 321 PNP Silicon Darlington Transistor BC 516 High current gain q High collector current q Complementary type: BC 517 (NPN) q 2 3 1 Type Marking Ordering Code Pin Configuration 1 2 3 Package1) BC 516 ­ Q62702-C944 C TO-92 B E Maximum Ratings Parameter , NPN Silicon Darlington Transistor BC 517 High current gain q High collector current q , JC 135 mA Thermal Resistance 1) 2) K/W For detailed information see chapter
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transistor bc 318 TRANSISTOR BC 321 transistor bc 325 TRANSISTOR BC 135 bc516 TRANSISTOR BC

transistor B 560

Abstract: TRANSISTOR BC 136 ,01, (p = Ci,3ms 135 BC 559 â'¢ BC 560 Min. Typ. Max. Rauschmaà Noise figure - UCE = 5 V, -/c = , BC 559 â'¢ BC 560 Silizium-PNP-Epitaxial-Planar-NF-Transistoren Silicon PNP Epitaxial Planar AF , noise voltage at the input of the transistor Vorläufige technische Daten - Preliminary specifications , stg BC 559 30 30 BC 560 50 45 5 100 200 200 500 150 -65 . +150 V V V mA mA mA mW °C °C 133 BC 559 â'¢ BC 560 'tot 500 mW 400 300 200 100 7414 6 9 tk â'" -â  V
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transistor B 560 TRANSISTOR BC 136 TRANSISTOR BC 560 BC560 IC 7414 transistor c-133

TRANSISTOR BC 534

Abstract: transistor bc 537 ) (MHz) (pF) TYPE BC 432 P TO-92F 625 0.8 60 63 240* 100 1 0.7 0.5 100+ 17+ BC 431 BC 440 N TO-39 1000 1 40 40 250» 500 4 1 1 50 25 BC 460 BC 441 N TO-39 1000 1 60 40 250» 500 4 1 1 50 25 BC 461 BC 445 N TO-92F 625 0.3 60 50 460» 2 5 0.25 0.1 100 3+ BC 446 BC 446 P TO-92F 625 0.3 60 50 460» 2 5 0.25 0.1 100 3+ BC 445 BC 460 P TO-39 1000 1 40 40 250» 500 4 1 1 50 25 BC 440 BC 461 P TO-39 10CKD 1 60 40 250» 5Ã0 4 1 1 50 25 BC 441 BC 485 N TO-92F 625 1 45 60 400» 100 2 0.5 0.5 200+ 7+ BC
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TRANSISTOR BC 534 transistor bc 537 TR BC 237 B transistor bc 488 transistor 537 b 360 transistor bc 630 MELF-005 MT-12 S40/S-

TRANSISTOR BC 413

Abstract: TFK 101  BC 413 â'¢ BC 414 Silizium-NPN-Epitaxial-Planar-NF-Transistoren Silicon NPN Epitaxial Planar , the transistor Abmessungen in mm Dimensions In mm Absolute Grenzdaten Absolute maximum ratings , Lagerungstemperaturb'ereich Storage temperature range CBO -CEO U, EBO 'BM tot stg BC 413 45 30 Normgehäuse Case 10 A 3 DIN 41 868 JEDEC TO 92 Z Gewicht â'¢ Weight max. 0,2 g BC 414 50 45 5 100 20 300 150 V V V mA mA mW °C -55 . +150 B 2/V.2. 486/0875 A 97 BC 413 â'¢ BC 414 tot 300 mW 200 100
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TFK 101 TFK 902 transistor bc 102 TFK 413 TFK 102 TFK BC

transistor BC 549

Abstract: transistor BC 550 Transistors Noise voltage at the transistor input UCE = 5 V' rC = 200 = 2 kQ' / = 10. 50 Hz BC550 O 0,135 , 4W» BC 549 â'¢ BC 550 Silizium-NPN-Epitaxial-Planar-NF-Transistoren Silicon NPN Epitaxial , '¢ Noise figure , Lagerungstemperaturbereich Storage temperature range JCBO -CEO EBO 'CM 'BM tot 'stg BC 549 30 30 Normgehäuse Case 10 A3 DIN 41868 JEDEC TO 92 Z Gewicht â'¢ Weight max. 0,2 g BC 550 50 V 45 V V mA mA mA 5 100 200
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transistor BC 549 transistor BC 550 TRANSISTOR BC 550 c TRANSISTOR BC 550 b BC549 TRANSISTOR BC 620

transistor bc 517

Abstract: BC517 BC 517 NPN Silicon Darlington Transistor BC 517 High current gain q High collector current q Complementary type: BC 516 (PNP) q 2 1 1 3 Type Marking Ordering Code Pin Configuration 1 2 3 Package1) BC 517 ­ Q62702-C825 C TO-92 B E , - case2) Rth JC 135 mA Thermal Resistance 1) 2) K/W For detailed , Group 1 5.91 BC 517 Electrical Characteristics at TA = 25 °C, unless otherwise specified
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transistor bc 517 BC517 transistor bc 100 c825 BC 517

Transistor - BC 547, CL 100

Abstract: bc 104 npn transistor NPN SILICON TRANSISTOR TRANSISTOR NPN SILICIUM Compi, of BC 556 at 560 bc546*bc 547 *bc 548 bc549. bc 550 Preferred device Dispositif recommandé General purpose bc 546/bc 547/bc 548 Usage général BC 546/BC 547/BC 548 Low noise bc 549/bc 550 Faible bruit BC 549/BC 550 65 V bc 546 The bc 546 is available in A and b groups Le BC 546 est livrable dans les groupes A et B VCEO 45 V 30 V bc , kii = 10-^50 Hz 0,135 4/10 408 BC 546, BC 547, BC 548, BC 549, BC 550 STATIC CHARACTERISTICS
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Transistor - BC 547, CL 100 bc 104 npn transistor transistor C 548 B bc 408 equivalent BC548BC bc 558 equivalent 546/BC 547/BC 549/BC

bc516

Abstract: C944 PNP Silicon Darlington Transistor BC 516 High current gain q High collector current q Complementary type: BC 517 (NPN) q 2 1 3 Type Marking Ordering Code Pin Configuration 1 2 3 Package1) BC 516 ­ Q62702-C944 C TO-92 B E Maximum Ratings Parameter , JC 135 mA Thermal Resistance 1) 2) K/W For detailed information see chapter , BC 516 Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol
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C944 517 bc

TRANSISTOR BC 137

Abstract: TRANSISTOR bc107 current gain IC 107 JC 108 -BC 109 BC107, BC 108, and BC 109 are epitaxial NPN silicon Planartransistors in , » Q62702-C680 BC 107 A Q60203-X107-A BC 107 B Q60203-X107-B BC 1081' Q60203-X108 BC108 A Q60203-X108-A BC 108 B Q60203-X108-B BC 108 C Q60203-X108-C BC 1091) 060203-X109 BC 109 B Q60203-X109-B BC 109 C , BC 107 BC 108 BC109 Collector-emitter voltage Vces 50 30 30 V Collector-emitter voltage Vceo 45 20 , order does not include any exact indication of the current amplification group desired, a transistor of
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TRANSISTOR BC 137 TRANSISTOR bc107 current gain BC107 characteristic transistor bc 138 transistor BC109 XL08 BC1071 Q60203-X109-C 10ZKH

bc 357 transistor datasheet

Abstract: bc 309 b transistor Certified Manufacturer SILICON PLANAR EPITAXIAL TRANSISTORS BC 307, A, B, C BC 308, A, B, C BC 309 , PLANAR EPITAXIAL TRANSISTORS BC 307, A, B, C BC 308, A, B, C BC 309, A, B, C TO-92 Plastic Package , TRANSISTORS BC 307, A, B, C BC 308, A, B, C BC 309, A, B, C TO-92 Plastic Package ELECTRICAL , CHARACTERISTICS fT Transition Frequency BC307 BC308 BC309 f=50MHz BC 309 NF f=1MHz IC , BC 307, A, B, C BC 308, A, B, C BC 309, A, B, C TO-92 Plastic Package TO-92 Plastic Package
Continental Device India
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bc 357 transistor datasheet bc 309 b transistor bc 357 transistor BC307A BC 114 transistor transistor 307 C-120

BC 114 transistor

Abstract: bc 357 transistor pin details SILICON PLANAR EPITAXIAL TRANSISTORS BC 307, A, B, C BC 308, A, B, C BC 309, A, B, C TO-92 Plastic , BC 307, A, B, C BC 308, A, B, C BC 309, A, B, C TO-92 Plastic Package ELECTRICAL , 0.3 0.7 V V V V V Page 2 of 5 SILICON PLANAR EPITAXIAL TRANSISTORS BC 307, A, B, C BC 308, A, B, C BC 309, A, B, C TO-92 Plastic Package ELECTRICAL CHARACTERISTICS (Ta , Transition Frequency BC307 BC308 BC309 f=50MHz BC 309 NF f=1MHz IC=0.2mA, VCE=5V BC307
Continental Device India
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bc 357 transistor pin details bc 357 transistor pin transistor BC 153 BC 170 transistor transistor BC 307 CDIL BC307

TRANSISTOR BC 208

Abstract: TRANSISTOR BC 158 800 * 2 5 0.6 100 200+ 4.5 10 BC 149 N TO-92F 350 100 20 200 .800 * 2 5 0.6 100 200+ 4.5 10 BC 135 P , °> max (V) â c (mA) BC 107 N TO-18 300 100 45 110 450 â'¢ 2 5 0.6 100 150 6 10 BC 108 N TO-18 300 100 20 110 800 t 2 5 0.6 100 150 6 10 BC 109 N TO-18 300 100 20 110 800 t 2 5 0.6 100 150 6 4 BC 110 N TO-18 300 50 80 30 â'" 2 5 0.6 50 100+ 5 â'" BC 113 N TO-106 200 50 25 200 1000 1 5 0.35 1 60 4 3 BC 114 N TO-106 200 50 25 200 1000 1 5 0.35 1 70 4 3 BC 132 N TO-106 200 50 25 60 300 1 10 0.35 1 40
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TRANSISTOR BC 208 TRANSISTOR BC 158 TRANSISTOR BC 157 transistor BC-148 bc 106 transistor transistor BC 209

TRANSISTOR BC 137

Abstract: BC107 characteristic 108 - BC 109 B C 107, BC 108, and BC 109 are epitaxial NPN silicon planar transistors in T 0 18 metal case (18 A 3 DIN 41876). The , input and driver stages. NPN Silicon Transistors Type B C 1 0 7 1) BC 107 A BC 107 B BC 1081) B C 108 A BC 108 B BC 108 C BC 1091> BC 109 B BC 109 C Ordering code Q62702-C680 Q60203-X107-A , Junction to case ftthJA flthJC Vces Vceo V'ebo B C 107 50 45 6 100 200 50 175 300 B C 108 BC 109 V
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BC 108 transistor TRANSISTOR BC 109 NT 101 BC 107 transistor b 108 b transistor bc 107 60203-X109

TRANSISTOR BC 448

Abstract: transistors BC 446 SILICON PLANAR EPITAXIAL TRANSISTORS BC 446, A, B BC 448, A, B BC 450, A, B TO-92 Plastic Package , Continental Device India Limited Data Sheet Page 1 of 4 SILICON PLANAR EPITAXIAL TRANSISTORS BC 446, A, B BC 448, A, B BC 450, A, B TO-92 Plastic Package ELECTRICAL CHARACTERISTICS (Ta , India Limited Data Sheet Page 2 of 4 BC 446, A, B BC 448, A, B BC 450, A, B TO-92 Plastic , Transistor and Adhesive Tape Visible 2000 pcs./Ammo Pack All dimensions in mm unless specified otherwise
Continental Device India
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BC446 BC448 BC450 TRANSISTOR BC 448 transistors BC 446 TRANSISTOR BC 450 pnp BC448A

TRANSISTOR BC 448

Abstract: BC448 Certified Manufacturer PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC 446, A, B BC 448, A, B BC 450, A , SILICON PLANAR EPITAXIAL TRANSISTORS BC 446, A, B BC 448, A, B BC 450, A, B TO-92 Plastic Package , %. Continental Device India Limited Data Sheet Page 2 of 4 BC 446, A, B BC 448, A, B BC 450, A, B TO , Transistor and Adhesive Tape Visible 2000 pcs./Ammo Pack All dimensions in mm unless specified otherwise , CARTON BOX Size Qty Gr Wt 17" x 15" x 13.5" 80K 23 kgs 17" x 15" x 13.5" 32K 12.5 kgs Page 3
Continental Device India
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TRANSISTOR BC 413

Abstract: BC414C Certified Manufacturer SILICON PLANAR EPITAXIAL TRANSISTORS BC 413, B, C BC 414, B, C TO-92 Plastic Package Low Noise Transistors ABSOLUTE MAXIMUM RATINGS ( Ta=25ºC unless specified otherwise) BC 413 , 125 ºC/W Data Sheet Page 1 of 4 SILICON PLANAR EPITAXIAL TRANSISTORS BC 413, B, C BC , 2%. Continental Device India Limited Data Sheet Page 2 of 4 BC 413, B, C BC 414, B, C , 1.982 - 2.082 All diminsions in mm. Flat Side of Transistor and Adhesive Tape Visible 2000
Continental Device India
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BC414C BC413C BC413B BC414B Transistor BC413C BC413B transistor
Abstract: SIEMENS NPN Silicon Darlington Transistor BC 517 â'¢ High current gain â'¢ High collector current â'¢ Complementary type: BC 516 (PNP) Type Marking Ordering Code P inC onfigur ation 1 2 3 Package1 ) BC 517 - Q62702-C825 C TO-92 B E Maximum Ratings , Junction - case2) /fttlJC £ 135 Thermal Resistance K/W D For detailed information see , 642 flSBSbOS O i a O S E S 1998-11-01 0^3 SIEMENS BC 517 Electrical Characteristics -
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EHP00153 D1SQ52

BC 547 PIN DIAGRAM

Abstract: IDG 600 activates the off-hook or the CLID external transistor switch. 6 NC Ring LIM2 19 NC , Digital AIN . . . . . . . . . . . If CLID external transistor switch is enabled, a , . These signals control the off-hook and CLID external transistor switches and is sent to the internal , signal in opposite phase, this pin puts ON the hook switch external Q1/Q2 transistor stage. IDC When D5 input a 5VPP/Fmod signal, this pin puts ON the CLID external Q3/Q4 transistor stage. R2 limits
STMicroelectronics
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ST952 TQFP32 ST952TQFP ST75951 BC 547 PIN DIAGRAM IDG 600 pin diagram of BC 547 STMicroelectronics Krypton TRANSISTOR C 557 B
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