NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: ) Parameter Test Conditions 1 INDIVIDUAL TRANSISTOR CHARACTERISTICS VCE = 10V RG = 3kW Min. , ) Parameter Test Conditions 1 Min. Typ. Max. Unit INDIVIDUAL TRANSISTOR CHARACTERISTICS IC = , unless otherwise stated) Parameter Test Conditions TRANSISTOR MATCHING CHARACTERISTICS hFE1 , Figure IC = 100mA RG = 3kW f = 1kHz 3 dB Noise Bandwidth = 200Hz VCE = 10V IC = 100mA RG = 3kW f = 10kHz 2.5 Noise Bandwidth = 2kHz VCE = 10V _ F Average Noise ... | Original |
7 pages, |
small signal transistor 2N2920DCSM TRANSISTOR 3kw 2N2920DCSM abstract |
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| Abstract: 700 15A 24A 16kHz () Si ( +) 14W 3kW0.47% Pcv(kW/m3) 600 3kW 1mH , (kHz) 40 45 50 310 1 (3kW)0.47% 21% , 33% "" 30% 3kW () PE90 : 100 3kW 1mH , Gate Bipolar Transistor : ) IGBT 30kHz IGBT 3050kHz ... | Original |
17 pages, |
1080W PC40 PC44 TRANSISTOR 3kw PC47 PC44 ferrite material TDK PC44 MPPT CONTROLLER PC40 ferrite ed 7aa mppt igbt 50kw 320V20 PE-90 datasheet abstract |
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| Abstract: LMH5010RB LMH5010RB 500V 35A APPLICATION SPECIFIC POWER MODULE FOR 3KW CONVERTER PRODUCT DESCRIPTION The LMH5010RB LMH5010RB is an Application Specific Power Module (ASPM) that integrates all the necessary power functions to build a converter, up to 3KW, with a 220/240V 220/240V AC input. System design time is dramatically , 0.1" (2.54mm) centers. PRODUCT FEATURES PRODUCT APPLICATIONS · Up to 3KW Output Power · , Recovery Charge (IS = -47A, dlS/dt = 100A/us) 14.7 uC FULL BRIDGE TRANSISTOR DRIVER ELECTRICAL ... | Original |
5 pages, |
DC converter welder high power class d mosfet h bridge 25a rectifier diode for max 250v 1.5A high frequency welder circuit diagram diode bridge 8A 220V B4 diode snubber full bridge AC welder circuit diagram bridge rectifier 240V AC 240v dc LMH5010RB 220v 25a diode bridge LMH5010RB abstract |
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| Abstract: BDX67 BDX67 BDX67A BDX67A BDX67B BDX67B BDX67C BDX67C MECHANICAL DATA Dimensions in mm NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR 26.6 max. 9.0 max. 20.3 max. E 1 .0 B 2. 5 NPN epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. 16.9 30.1 39.5 max. 4.2 10.9 12.8 PNP complements are: BDX66 BDX66, BDX66A BDX66A, BDX66B BDX66B , : Measured under pulse conditions , tp < 300ms, d < 2% C B R1 typ. 3KW R2 typ. 80W R1 R2 E ... | Original |
2 pages, |
BDX67C BDX66A BDX67 BDX66B BDX67A BDX67B BDX66 BDX66C transistor bdx66 BDX67 abstract |
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| Abstract: SEME 2N3799 2N3799 LAB MECHANICAL DATA Dimensions in mm (inches) PNP LOW NOISE , AMPLIFIER TRANSISTOR 5.84 (0.230) 5.31 (0.209) 12.7 (0.500) min. 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) 0.48 (0.019) 0.41 (0.016) dia. FEATURES · SILICON PLANAR EPITAXIAL PNP TRANSISTOR · CECC SCREENING OPTIONS · LOW NOISE AMPLIFIER 2.54 (0.100) Nom. APPLICATIONS: 3 1 , RG = 3kW pF 5 IC = 1mA f = 100Hz NF MHz 10 VCE = 10V VCE = 10V V ... | Original |
2 pages, |
2N3799 datasheet abstract |
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| Abstract: SEME 2N3799X 2N3799X LAB MECHANICAL DATA Dimensions in mm (inches) PNP, LOW NOISE AMPLIFIER TRANSISTOR 5.84 (0.230) 5.31 (0.209) 12.7 (0.500) min. 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) 0.48 (0.019) 0.41 (0.016) dia. FEATURES · SILICON PLANAR EPITAXIAL PNP TRANSISTOR · CECC SCREENING OPTIONS · LOW NOISE AMPLIFIER 2.54 (0.100) Nom. APPLICATIONS: 3 1 , RG = 3kW pF 5 IC = 1mA f = 100Hz NF MHz 10 VCE = 10V VCE = 10V V ... | Original |
2 pages, |
2N3799X datasheet abstract |
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| Abstract: LRBH5010T LRBH5010T 500V 35A APPLICATION SPECIFIC POWER MODULE FOR 3KW CONVERTER PRODUCT DESCRIPTION The LRBH5010T LRBH5010T is an Application Specific Power Module (ASPM) that integrates all the necessary power functions to build a converter, up to 3kW, with a 220/240V 220/240V AC input. System design is dramatically reduced due , Up to 3kW Output Power · 220V/240V AC Single Phase Input · High Switching Frequency (up to 100kHz , BRIDGE TRANSISTOR DRIVER ELECTRICAL CHARACTERISTICS Characteristic / Test Conditions MIN TYP ... | Original |
6 pages, |
220v 100a diode bridge 3 phase UPS block diagram using MOSFET high frequency welder circuit diagram high power class d LRBH5010T mosfet 3kw welder controller welder mosfet PFC 3kw zvt boost converter 3kw mosfet bridge rectifier single phase 240V AC LRBH5010T abstract |
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| Abstract: consequently the switching frequency will be limited by the switching losses of the chosen power transistor , applications using up to 277V AC mains, with an output power of up to 3kW. The STE30NA50-DK STE30NA50-DK is a perfect solution for applications in the 1 to 3kW range. This device combines a low RDS(on) Power MOSFET with an , ® package. An active snubber should be added to achieve maximum efficiency. Above 3kW, IGBTs are more , transistor, the discharge current of this parasitic capacitor can exceed 1A. Using a boost inductor with a ... | Original |
10 pages, |
smps 1500W ste30na50 ste30na50-DK 3000w pfc power amplifier 3000w circuit diagram power amplifier 3000w diagram buck converter 3kw 3000w ferrite TRANSISTOR 3000W 400V cost of Inductor STTA2006DI 3000w power amplifier circuit diagram 3000w smps datasheet abstract |
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| Abstract: consequently the switching frequency will be limited by the switching losses of the chosen power transistor , applications using up to 277V AC mains, with an output power of up to 3kW. The STE36N50-DK STE36N50-DK is a perfect solution for applications in the 1 to 3kW range. This device combines a low RDS(on) Power MOSFET with an , ® package. An active snubber should be added to achieve maximum efficiency. Above 3kW, IGBTs are more , transistor, the discharge current of this parasitic capacitor can exceed 1A. Using a boost inductor with a ... | Original |
9 pages, |
STE36N50-DK 3000w ferrite 3000w power amplifier Circuit power amplifier 3000w circuit diagram 3000w pfc 3000w power amplifier circuit diagram STTA2006DI smps 1500W 3000w smps L4981 3000w TRANSISTOR 3000W 400V power amplifier 3000w diagram IEC555 EN60555 IEC555 abstract |
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| Abstract: switching frequency will be limited by the switching losses of the chosen power transistor, and the , up to 277V AC mains, with an output power of up to 3kW. The STE36N50-DK STE36N50-DK is a perfect solution for applications in the 1 to 3kW range. This device combines a low R DS(on) Power MOSFET with an ultra-fast 3 , active snubber should be added to achieve maximum efficiency. Above 3kW, IGBTs are more suitable due to , capacitance of the boost inductor. During turn-on switching of the power transistor, the discharge current ... | Original |
9 pages, |
300V dc dc boost converter STE36N50-DK 3kw mosfet 3000W power supply smps 1500W L4981 3000w 3000w power amplifier Circuit TRANSISTOR 3kw STTA2006DI TRANSISTOR 3000W 400V AMPLIFIER 1500w cost of Inductor smps inductor 3000w smps IEC555 EN60555 IEC555 abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| TO3 Kw TR TO3 $EndMODULE # $MODULE RV2X4 Li RV2X4 Cd Resistance variable / Potentiometre Kw R MODULE # $MODULE TO18CBE Li TO18CBE Cd Transistor TO18 Kw TO18 $EndMODULE # $MODULE TO18EBC Li TO18EBC Cd Transistor TO18 Kw TO18 $EndMODULE # $MODULE TO18GSD Li TO18GSD Cd Transistor TO18 Kw TO18 $End MODULE # $MODULE IRF530 IRF530 IRF530 IRF530 Li IRF530 IRF530 IRF530 IRF530 Cd Transistor VMOS Irf530, TO220 Kw TR TO220 DEV $EndMODULE # $MODULE TO220 Li TO220 Cd Transistor TO 220 Kw TR TO220 DEV $EndMODULE # $MODULE LEDV Li LEDV Cd Led www.datasheetarchive.com/files/kaleidoscope/cad/kicad - kicad/modules/discret.mdc |
Kaleidoscope | 17/05/2005 | 5.02 Kb | MDC | discret.mdc |
| results are: AC POWER SOURCE LARCET /3KW PM1200 PM1200 PM1200 PM1200 AC POWER ANALYSER EMI FILTER PFC L4981 L4981 L4981 L4981 DEMO LOAD D switching frequency. 19 V CC Supply input voltage. 20 GDRV Output gate driver. Bipolar and DMOS transistors www.datasheetarchive.com/files/stmicroelectronics/books/ascii/docs/1366.htm |
STMicroelectronics | 25/05/2000 | 24.49 Kb | HTM | 1366.htm |
| (efficiency). The test configuration, equipments and results are: AC POWER SOURCE LARCET /3KW PM . 19 V CC Supply input voltage. 20 GDRV Output gate driver. Bipolar and DMOS transistors totem www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/1366-v1.htm |
STMicroelectronics | 30/10/2000 | 23.96 Kb | HTM | 1366-v1.htm |
| results are: AC POWER SOURCE LARCET /3KW PM1200 PM1200 PM1200 PM1200 AC POWER ANALYSER EMI FILTER PFC L4981 L4981 L4981 L4981 DEMO LOAD D switching frequency. 19 V CC Supply input voltage. 20 GDRV Output gate driver. Bipolar and DMOS transistors www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/1366-v2.htm |
STMicroelectronics | 14/06/1999 | 20.94 Kb | HTM | 1366-v2.htm |
| results are: AC POWER SOURCE LARCET /3KW PM1200 PM1200 PM1200 PM1200 AC POWER ANALYSER EMI FILTER PFC L4981 L4981 L4981 L4981 DEMO LOAD D switching frequency. 19 V CC Supply input voltage. 20 GDRV Output gate driver. Bipolar and DMOS transistors www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/1366.htm |
STMicroelectronics | 02/04/1999 | 20.98 Kb | HTM | 1366.htm |
| 99.8 3.4 1 2.6 1.1 408 504 96.3 AC POWER SOURCE LARCET 3KW PM1200 PM1200 PM1200 PM1200 AC POWER ANALYSER EMI Newark#89F1949 89F1949 89F1949 89F1949 Q1 STW20NA50 STW20NA50 STW20NA50 STW20NA50, 500V, 20A, 2.7 ohms TO-247 SGS-THOMSON STW20NA50 STW20NA50 STW20NA50 STW20NA50 Q2 NPN transistor high www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4046.htm |
STMicroelectronics | 20/10/2000 | 44.33 Kb | HTM | 4046.htm |
| .1 408 504 96.3 AC POWER SOURCE LARCET 3KW PM1200 PM1200 PM1200 PM1200 AC POWER ANALYSER EMI FILTER PFC L4981 L4981 L4981 L4981 DEMO LOAD 1949 Q1 STW20NA50 STW20NA50 STW20NA50 STW20NA50, 500V, 20A, 2.7 ohms TO-247 ST STW20NA50 STW20NA50 STW20NA50 STW20NA50 Q2 NPN transistor high speed, 30V, .8A, TO www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4046-v1.htm |
STMicroelectronics | 02/04/1999 | 39.69 Kb | HTM | 4046-v1.htm |
| .1 408 504 96.3 AC POWER SOURCE LARCET 3KW PM1200 PM1200 PM1200 PM1200 AC POWER ANALYSER EMI FILTER PFC L4981 L4981 L4981 L4981 DEMO LOAD 1949 Q1 STW20NA50 STW20NA50 STW20NA50 STW20NA50, 500V, 20A, 2.7 ohms TO-247 ST STW20NA50 STW20NA50 STW20NA50 STW20NA50 Q2 NPN transistor high speed, 30V, .8A, TO www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4046-v2.htm |
STMicroelectronics | 14/06/1999 | 39.65 Kb | HTM | 4046-v2.htm |
| POWER SOURCE LARCET 3KW PM1200 PM1200 PM1200 PM1200 AC POWER ANALYSER EMI FILTER PFC L4981 L4981 L4981 L4981 DEMO LOAD transistor high speed, 30V, .8A, TO-18 Package SGS-THOMSON 2N2222 2N2222 2N2222 2N2222 Q3 N-Channel Mosfet, STK2N50 STK2N50 STK2N50 STK2N50, 500V, 2A www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4046-v3.htm |
STMicroelectronics | 25/05/2000 | 41.66 Kb | HTM | 4046-v3.htm |
| $MODULE TO3 Po 33000 40000 0 15 00200000 00000000 ~~ Li TO3 Cd Transistor TO3 Kw TR TO3 Sc 00000000 3FA02AC9 3FA02AC9 3FA02AC9 3FA02AC9 3FA02AD7 3FA02AD7 3FA02AD7 3FA02AD7 ~~ Li TO39EBC Cd Transistor TO38 Kw TO38 Sc 3FA02AD7 3FA02AD7 3FA02AD7 3FA02AD7 Op 0 0 0 T0 -100 2200 Transistor TO 220 Kw TR TO220 DEV Sc 00000000 Op 0 0 0 T0 2750 0 400 400 900 80 N V 21 "TO220" T1 4250 0 MODULE TO220 $MODULE IRF530 IRF530 IRF530 IRF530 Po 32800 24500 0 15 00200000 00000000 ~~ Li IRF530 IRF530 IRF530 IRF530 Cd Transistor VMOS Irf530 Po 31500 16700 0 15 3DFDE2B2 00000000 ~~ Li VP0808 VP0808 VP0808 VP0808 Cd Transistor TO92 brochage type VP0808 VP0808 VP0808 VP0808 Kw TR www.datasheetarchive.com/files/kaleidoscope/cad/kicad - kicad/modules/discret1.brd |
Kaleidoscope | 17/05/2005 | 62.57 Kb | BRD | discret1.brd |