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LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

TRANSISTOR 2n3901

Catalog Datasheet MFG & Type PDF Document Tags

TRANSISTOR 2n3901

Abstract: 2N390 pnp Transistors Iâ'"j 2N3901 The General Electric 2N3901 is an NPN silicon planar transistor characterized , 2N3901 NPN 25 350-700 ! 2mA, 5 1.6 50mA, 3mA 120 7 360 101 SILICON SIGNAL LOW NOISE AMPLIFIERS TO , 2N3900A NPN 18 25G-b00 2mA, 5 5.0 VCE * bV. C ' 100MA, Rs - 5K, BW - 15.7KHZ, f = 10Hz to 15.7KHz 2N3901 , iugio ^ ^ KTB where: eâ'ž, iâ'ž are transistor noise voltage and noise current as obtained in Fig. 8 B , , Ropt â'" â'¢ m To 10% LTPD MHz 395 2N3901 I Ving. 1 1,. IC S
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2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 TRANSISTOR 2n3901 2N390 pnp 2N3904 TO92 pnp -NPN silicon high power transistor

2N3397

Abstract: 2N2925 2N3901 NPN 25 350-700 ! 2mA, 5 1.6 50mA, 3mA 120 7 360 101 Silicon Transistors The General Electric , % 10-50% 5-35% 0-15% A transistor line generates product with parameter variations. On General Electric , the spread types, General Electric guarantees that a certain percentage of each transistor group will
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2N2925 2N2926 2N3390 2N3391 2N3391A 2N3395 2N3397 n3860 to 98 2N2712 2N3392

2N3405

Abstract: transistor 2n3391 2N3901 NPN 25 350-700 ! 2mA, 5 1.6 50mA, 3mA 120 7 360 101 Silicon Transistors râ'"j 2N3390 The General Electric 2N3390 is an NPN silicon planar passivated transistor designed as a small signal
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2N3405 transistor 2n3391 transistor 2n3416 2N3393 2N3394 2N3396 2N3398 2N3402 2N3403

2n2926 transistor

Abstract: TRANSISTOR 2n3901 2N3901 NPN 25 350-700 ! 2mA, 5 1.6 50mA, 3mA 120 7 360 101 Silicon Transistor The General Electric 2N2926 is a planar passivated silicon transistor intended for general purpose applications. The planar
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2N3404 2n2926 transistor NPN high power transistor beta transistor 150 2n3877 transistor 2N3414

2n3877 transistor

Abstract: TRANSISTOR 2n3901 12 5 TO-92-1 2N3901 18 18 5 0.625 0.05 0.1 15 350 700 2 4.5 5 TO-92-1 2N3903 60 40 6 , P2 1â'" Iâ'"Po-» f¿Xf =f-i W F2 â'"bolâ'" «k/ Flat side of transistor and adhesive tape visible
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2N3693 2N3694 2N3704 2N3705 2N3708 2N3709 2N3904 ammo package 2N3877

beta transistor 2N2222

Abstract: 2N2924 equivalent 18 0.2 360 7 1 40.75 2N3901 350-700 150 2NS172 100-500 * 25 .25 max 360 7 100 Full line , M79P-X501 Similar to 1N3600 (Chip) except high voltage. 2 35.96 SILICON SIGNAL TRANSISTOR CHIPS Equivalent
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2N5232 beta transistor 2N2222 2N2924 equivalent beta dc of transistor 2N2222 2N2925 equivalent 1N9148 2n3390 equivalent 2N339S 2N2604 M92PX5C0 M24P-X502 2N2905 2N2906

2N2713

Abstract: 2N2714 2N3901 NPN 25 350-700 ! 2mA, 5 1.6 50mA, 3mA 120 7 360 101 Silicon Transistors The General Electric , ! VS IE 2N27I3, 2N27I4 Vc =5V Ta = 25°C (INFORMATION FROM MODEL 3IO TRANSISTOR NOISE ANALYZER
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2N2926 equivalent 2N3391 equivalent 2N3392 equivalent 2n2714 transistor 2N3416 equivalent NPN/2n2714 transistor 2N27I

T4 3570

Abstract: transistor t4 3570 2N3901 NPN 25 350-700 ! 2mA, 5 1.6 50mA, 3mA 120 7 360 101 Silicon Transistors The 2N2711 and 2N2712 , 1 VS If 2,2N3393, â'¢ 5V T4«2S VC 310 TRANSISTOR NOISE ANALYZED
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2N2646 T4 3570 transistor t4 3570 transistor 2n2712 2N3900 960L 1610Z79 4770Z48 960Z10 388Z41 170Z90

2N2926 equivalent

Abstract: beta transistor 2N2222 audio NF, non-epitaxial 40.74 2N3900A 18 0.2 360 7 1 40.75 2N3901 350-700 150 2NS172 , ) 35.91 1N4606 M79P-X501 Similar to 1N3600 (Chip) except high voltage. 2 35.96 SILICON SIGNAL TRANSISTOR
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2N6016 2N3856A 2n3393 equivalent 2N3394 equivalent 2N3859A equivalent to PNP 2N5232A equivalent Silicon NPN Epitaxial low noise audio amplifier 1N4532 GET706 GET708 GET914 GET3013 GET3646 GE1705

D33025

Abstract: 2NS35 Collector Current Improved transistor chips and advanced encapsulation techniques make the General Electric , audio NF, non-epitaxial 40.74 2N3900A 18 0.2 360 7 1 40.75 2N3901 350-700 150 2NS172
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2N6000 2N6002 2N6006 D33025 2NS35 pnp beta 250 ft 150 2N60C 2N601 2N38S CET708 GET3014 GET3638 GET3638A

TRANSISTOR 2n3901

Abstract: MPD300 level shifting diodes in transistor logic circuits, and also as dc coupling devices in dc amplifiers and , charge and the subsequent long recovery time, the MPD300 speeds up the transistor turn-off time by , transistor. Turn-off time is reduced by a factor of 2 to 3 compared to the use of 3 ordinary diodes in series. When a faster transistor, like the 2N2368 is used, similar improvement in performance is achieved. For a slow non-gold-doped type transistor, like the 2N3973 similar improvement is also obtained provided
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1N4150 1N4450 1N4607 1N460B DT230C DT230H 1N4156 mpd200 Multi-pellet diodes Transistor 2N708 1N445I

beta transistor 2N2222

Abstract: 2n RF transistor Collector Current Improved transistor chips and advanced encapsulation techniques make the General Electric , audio NF, non-epitaxial 40.74 2N3900A 18 0.2 360 7 1 40.75 2N3901 350-700 150 2NS172 , ) 35.91 1N4606 M79P-X501 Similar to 1N3600 (Chip) except high voltage. 2 35.96 SILICON SIGNAL TRANSISTOR
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2n RF transistor PT 3590 2n6q 2n3901 equivalent 2n600 transistor pnp-npn 2N6001 2N6003 2N6Q02 2NS001 2N60C0 GET2221

transistor 2N3563

Abstract: 2SK30 2N3844A 2N3845 2N3845A 2N3854 2N3854A 2N3855 2N3855A 2N3856 2N3858A 2N3859A 2N3877 2N3901 2N3903 2N3904
Fairchild Semiconductor
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transistor 2N3563 2SK30 2n3819 cross reference 2SA726 2sk41e transistor 2sc1417 2N669B 2N696 2N697 2N699 2N699A 2N706

Q2N4401

Abstract: D1N3940 Bipolar Transistor Bridge Driver Buffer (Analog) Connector Magnetic Core Current Regulator Diode Quartz , Bipolar Transistor Instrument Amplifier Isolation Amplifier Junction Field-Effect Transistor Level , Diode Pressure Sensor Power Bipolar Transistor Power Driver (Analog) Power MOSFET Radio System Rectifier Relay Driver RF Bipolar Transistor RF Mosfet Schottky Diode Sense Amplifier Sample-and-Hold Amplifier Silicon-Controlled Rectifier Small-Signal Mosfet Switch Tone Controller Transmission Line Transistor Array Triac
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Q2N4401 D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 RD91EB

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The Transistor and Diode Data Book for Design Engineers Texas Instruments INCORPORATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY TRANSISTOR DATA SHEETS TRANSISTOR CHIP CHARACTERIZATION TRANSISTOR QUALITY AND RELIABILITY INFORMATION DIODE PRODUCT SPECTRUM DIODE SELECTION GUIDES DIODE , . Texas Instruments INCORPORATED The Transistor and Diode Data Book for Design Engineers First Edition
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LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 3186J CA90245

IC HXJ 2038

Abstract: 1N52398 INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY TRANSISTOR DATA SHEETS TRANSISTOR CHIP CHARACTERIZATION TRANSISTOR QUALITY AND RELIABILITY INFORMATION DIODE , Third Printing THE TRANSISTOR AND DIODE DATA BOOK Since 1954, when Texas Instruments introduced the first silicon transistor to the marketplace, and later w ith the invention of the integrated circuit, T , contains over 800 silicon transistor types (grown-junction, m ultijunction, unijunction, and field-effect
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IC HXJ 2038 1N52398 tfk 102 cny 70 DB5T hxj 2038 rca 40361 transistor

y51 h 120c

Abstract: ac128 2G524 TRANSISTOR NUMBER OA LT PACK­ AGE LEAD INFO VCB MAX 2CY17 2CY18 2CYI9 2CY20 2CY21 PG PG PG , 250MWF 250MWF 250MWF 250MWF 12 USA EQUIV TRANSISTOR NUMBER 2N27 PM OA LT i PACK­ AGE LEAD INFO , TRANSISTOR NUMBER LEAD INFO VCB MAX OBS T024 T024 T024 T022 Mil M U M U L37 20V 30V 30V 30V 15V 2N95 , 2N174 2N174A TRANSISTOR NUMBER 2N149A i EUR EQUIV USA EQUIV OBS OBS OBS OBS OBS ASY29 2N1304 , A157 A157 A157 PM TRANSISTOR NUMBER OA I LT PACK­ AGE LEAD INFO VCB MAX VCE MAX 2N216 2N217
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y51 h 120c ac128 bd124 AFY18 MM1711 bf503 500MA 240MWF 100MWF 300MWF 150MWF 300MA

transistor c2060

Abstract: Germanium itt 12 Application Notes Understanding Transistor Response Parameters RF Small-Signal Design Using 2-Port Parameters Selecting Commercial Power Transistor HeatSinks Mounting Procedure For, And Thermal Aspects of , Theory and Characteristics of the Unijunction Transistor Unijunction Transistor Timers and Oscillators , Bi-Polar Transistor Short-Form Specifications This table serves tw o functions. It lists all 2N and 3N , transistor types. Those 2N type numbers repre­ senting semiconductor devices other than bi-polar
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transistor c2060 Germanium itt C1906 transistor IN939 Transistor Shortform Datasheet & Cross References 2N158 JAN AN-134

silec

Abstract: 1N6227 INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY TRANSISTOR DATA SHEETS TRANSISTOR CHIP CHARACTERIZATION TRANSISTOR QUALITY AND RELIABILITY INFORMATION DIODE , Third Printing THE TRANSISTOR AND DIODE DATA BOOK Since 1954, when Texas Instruments introduced the first silicon transistor to the marketplace, and later w ith the invention of the integrated circuit, T , contains over 800 silicon transistor types (grown-junction, m ultijunction, unijunction, and field-effect
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silec 1N6227 GG 84 2G300 1n623 chn 543

hep 154 silicon diode

Abstract: zy 406 transistor (resistors, coils, etc.) as they might have been dam­ aged if the original transistor were shorted. In most auto radio output stages, check emitter resistor (replacement transistor will be permanently damaged , Transistorâ'" NPN 200MHz 600mW Si RF Transistorâ'" NPNâ'"30MHz 310mW Si RF Transistor NPN-200MHz 310mW Si , Wave Bridge Rectifier 400PIV lAmp Full Wave Bridge Rectifier-600PIV lAmp Ge Power Transistor- PNP-TO , 150Watt Ge Power Transistorâ'"PNP- TO-3â'" 7Arnp 90Watt Ge Power Transistor- PNP- TO-36â'"L5Amp 170Watt
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hep 154 silicon diode zy 406 transistor hep R1751 motorola HEP 801 triac zd 607 hep 154 diode ZU62B ZU110 ZU110A ZV12B ZV27B ZV33B
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